Page 24 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

JANTX1N3912
Microsemi Corporation

DIODE GEN PURP 300V 50A DO203AB

Package: DO-203AB, DO-5, Stud

Stock6,352
AS3PJHM3/87A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 2.1A TO277A

Package: TO-277, 3-PowerDFN

Stock3,008
S4PMHM3/86A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 4A TO277A

Package: TO-277, 3-PowerDFN

Stock7,040
SS32HE3/9AT
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V 3A DO214AB

Package: DO-214AB, SMC

Stock4,304
SCH12500
Semtech Corporation

DIODE GP 12.5KV 500MA AXIAL

Package: Axial

Stock7,808
JAN1N6081
Microsemi Corporation

DIODE GEN PURP 150V 2A AXIAL

Package: G, Axial

Stock6,768
SF2003GHC0G
TSC America Inc.

DIODE, SUPER FAST, 20A, 150V, 35

Package: TO-220-3

Stock5,568
RY2AV1
Sanken

DIODE GEN PURP 600V 3A AXIAL

Package: Axial

Stock3,792
RU 3
Sanken

DIODE GEN PURP 400V 1.5A AXIAL

Package: Axial

Stock4,352
1N4002GPE-E3/91
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO204AL

Package: DO-204AL, DO-41, Axial

Stock2,112
UF3006-HF
Comchip Technology

DIODE GEN PURP 600V 3A DO201AA

Package: DO-201AA, DO-27, Axial

Stock3,056
MPG06M-E3/53
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A MPG06

Package: MPG06, Axial

Stock4,560
RS2A M4G
TSC America Inc.

DIODE, FAST, 2A, 50V, 150NS, DO-

Package: DO-214AA, SMB

Stock6,544
VS-ETU0805-M3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 500V 8A TO220AC

Package: TO-220-2

Stock22,584
US1JDF-13
Diodes Incorporated

DIODE GEN PURPOSE 600V 1A DFLAT

Package: 2-SMD, Flat Lead

Stock3,296
VS-60APU02-N3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 60A TO247AC

Package: TO-247-3

Stock9,396
MMDL770T1G
ON Semiconductor

DIODE SCHOTTKY 70V SOD323

Package: SC-76, SOD-323

Stock114,720
MRA4004T3G
ON Semiconductor

DIODE GEN PURP 400V 1A SMA

Package: DO-214AC, SMA

Stock2,862,492
1N2496
Microchip Technology

DIODE GEN PURP 500V 6A DO4

Package: -

Request a Quote
RS1FM-M3-H
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1KV 1A DO219AB

Package: -

Stock130,581

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
JANTX1N3912	Microsemi Corporation	DIODE GEN PURP 300V 50A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 50A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 15µA @ 300V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-203AB, DO-5, Stud	Stock6,352	300V	50A	1.4V @ 50A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	15µA @ 300V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 150°C
AS3PJHM3/87A	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 600V 2.1A TO277A Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 2.1A (DC) Voltage - Forward (Vf) (Max) @ If: 920mV @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.2µs Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: 37pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-277, 3-PowerDFN	Stock3,008	600V	2.1A (DC)	920mV @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	1.2µs	10µA @ 600V	37pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
S4PMHM3/86A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 4A TO277A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5µs Current - Reverse Leakage @ Vr: 10µA @ 1000V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-277, 3-PowerDFN	Stock7,040	1000V	4A	1.1V @ 4A	Standard Recovery >500ns, > 200mA (Io)	2.5µs	10µA @ 1000V	30pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C
SS32HE3/9AT	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 20V 3A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 125°C	Package: DO-214AB, SMC	Stock4,304	20V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 125°C
SCH12500	Semtech Corporation	DIODE GP 12.5KV 500MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 12500V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 13V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5µs Current - Reverse Leakage @ Vr: 1µA @ 12500V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -55°C ~ 150°C	Package: Axial	Stock7,808	12500V	500mA	13V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	5µs	1µA @ 12500V	-	Through Hole	Axial	-	-55°C ~ 150°C
JAN1N6081	Microsemi Corporation	DIODE GEN PURP 150V 2A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 37.7A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 10µA @ 150V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: G, Axial Supplier Device Package: G, Axial Operating Temperature - Junction: -65°C ~ 155°C	Package: G, Axial	Stock6,768	150V	2A	1.5V @ 37.7A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	10µA @ 150V	-	Through Hole	G, Axial	G, Axial	-65°C ~ 155°C
SF2003GHC0G	TSC America Inc.	DIODE, SUPER FAST, 20A, 150V, 35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 975mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 150V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-220-3	Stock5,568	150V	20A	975mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	80pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
RY2AV1	Sanken	DIODE GEN PURP 600V 3A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	Package: Axial	Stock3,792	600V	3A	1.15V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	10µA @ 600V	-	Through Hole	Axial	-	-40°C ~ 150°C
RU 3	Sanken	DIODE GEN PURP 400V 1.5A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	Package: Axial	Stock4,352	400V	1.5A	1.5V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	400ns	10µA @ 400V	-	Through Hole	Axial	-	-40°C ~ 150°C
1N4002GPE-E3/91	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AL, DO-41, Axial	Stock2,112	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2µs	5µA @ 100V	8pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
UF3006-HF	Comchip Technology	DIODE GEN PURP 600V 3A DO201AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-27 Operating Temperature - Junction: -55°C ~ 125°C	Package: DO-201AA, DO-27, Axial	Stock3,056	600V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	30pF @ 4V, 1MHz	Through Hole	DO-201AA, DO-27, Axial	DO-27	-55°C ~ 125°C
MPG06M-E3/53	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 1A MPG06 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 600ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: MPG06, Axial Supplier Device Package: MPG06 Operating Temperature - Junction: -55°C ~ 150°C	Package: MPG06, Axial	Stock4,560	1000V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	600ns	5µA @ 1000V	10pF @ 4V, 1MHz	Through Hole	MPG06, Axial	MPG06	-55°C ~ 150°C
RS2A M4G	TSC America Inc.	DIODE, FAST, 2A, 50V, 150NS, DO- Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AA, SMB	Stock6,544	50V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	50pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
VS-ETU0805-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 500V 8A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 9µA @ 500V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C	Package: TO-220-2	Stock22,584	500V	8A	1.25V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	9µA @ 500V	-	Through Hole	TO-220-2	TO-220AC	-65°C ~ 175°C
US1JDF-13	Diodes Incorporated	DIODE GEN PURPOSE 600V 1A DFLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: D-Flat Operating Temperature - Junction: -55°C ~ 150°C	Package: 2-SMD, Flat Lead	Stock3,296	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	10pF @ 4V, 1MHz	Surface Mount	2-SMD, Flat Lead	D-Flat	-55°C ~ 150°C
VS-60APU02-N3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 60A TO247AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 1.08V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 28ns Current - Reverse Leakage @ Vr: 50µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-247-3	Stock9,396	200V	60A	1.08V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	28ns	50µA @ 200V	-	Through Hole	TO-247-3	TO-247AC	-55°C ~ 175°C
MMDL770T1G	ON Semiconductor	DIODE SCHOTTKY 70V SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 70V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200nA @ 35V Capacitance @ Vr, F: 1pF @ 20V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C	Package: SC-76, SOD-323	Stock114,720	70V	-	1V @ 10mA	Small Signal =< 200mA (Io), Any Speed	-	200nA @ 35V	1pF @ 20V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-55°C ~ 150°C
MRA4004T3G	ON Semiconductor	DIODE GEN PURP 400V 1A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-214AC, SMA	Stock2,862,492	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	-	Surface Mount	DO-214AC, SMA	SMA	-55°C ~ 175°C
1N2496	Microchip Technology	DIODE GEN PURP 500V 6A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 500 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 (DO-203AA) Operating Temperature - Junction: -65°C ~ 200°C	Package: -	Request a Quote	500 V	6A	1.3 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 500 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4 (DO-203AA)	-65°C ~ 200°C
RS1FM-M3-H	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 1KV 1A DO219AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 5pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock130,581	1000 V	1A	1.25 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	5 µA @ 1000 V	5pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 150°C
SRL23-AQ	Diotec Semiconductor	IC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 250 µA @ 30 V Capacitance @ Vr, F: 40pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: PowerSOD-323, Flat Lead Supplier Device Package: PowerSOD-323 Operating Temperature - Junction: -40°C ~ 125°C	Package: -	Request a Quote	30 V	2A	450 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	250 µA @ 30 V	40pF @ 10V, 1MHz	Surface Mount	PowerSOD-323, Flat Lead	PowerSOD-323	-40°C ~ 125°C
SCS206AGC17	Rohm Semiconductor	DIODE SIL CARB 650V 6A TO220ACFP Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 120 µA @ 600 V Capacitance @ Vr, F: 219pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220ACFP Operating Temperature - Junction: 175°C	Package: -	Stock4,788	650 V	6A	1.55 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 600 V	219pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220ACFP	175°C
SBA240AL_R1_00001	Panjit International Inc.	DIODE SCHOTTKY 40V 2A SOD123FL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock6,156	40 V	2A	530 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	-	Surface Mount	SOD-123F	SOD-123FL	-55°C ~ 150°C
11DQ04	SMC Diode Solutions	DIODE SCHOTTKY 40V 1.1A DO41 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1.1A Voltage - Forward (Vf) (Max) @ If: 710 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 40 V Capacitance @ Vr, F: 55pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -40°C ~ 150°C	Package: -	Stock32,298	40 V	1.1A	710 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 40 V	55pF @ 5V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-40°C ~ 150°C
R5011015XXWA	Powerex Inc.	DIODE GP REV 1KV 150A DO205AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 7 µs Current - Reverse Leakage @ Vr: 30 mA @ 1000 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -65°C ~ 200°C	Package: -	Request a Quote	1000 V	150A	-	Standard Recovery >500ns, > 200mA (Io)	7 µs	30 mA @ 1000 V	-	Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-65°C ~ 200°C
SS120	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 200V 1A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 200 V Capacitance @ Vr, F: 31pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	200 V	1A	950 mV @ 1 A	No Recovery Time > 500mA (Io)	-	100 µA @ 200 V	31pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
NTE525	NTE Electronics, Inc	DIODE GEN PURP 2KV 200MA DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2000 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 4 V @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 5 µA @ 2000 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	2000 V	200mA	4 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	500 ns	5 µA @ 2000 V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 175°C
1N5806URS-TR	Microchip Technology	UFR,FRR Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 1 µA @ 150 V Capacitance @ Vr, F: 25pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	150 V	1A	875 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 150 V	25pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	A, SQ-MELF	-65°C ~ 175°C