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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO204AL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500ns
- Current - Reverse Leakage @ Vr: 1µA @ 1000V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AL, DO-41, Axial |
Stock2,960 |
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1000V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 1µA @ 1000V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 400V 30A DOP3I
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 100ns
- Current - Reverse Leakage @ Vr: 35µA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DOP3I-2 Insulated (Straight Leads)
- Supplier Device Package: DOP3I
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: DOP3I-2 Insulated (Straight Leads) |
Stock78,144 |
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400V | 30A | 1.5V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 35µA @ 400V | - | Through Hole | DOP3I-2 Insulated (Straight Leads) | DOP3I | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 15V 20A TO220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 15V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 410mV @ 19A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10mA @ 15V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: TO-220-2 |
Stock5,072 |
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15V | 20A | 410mV @ 19A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10mA @ 15V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 120V 330A DO205AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 120V
- Current - Average Rectified (Io): 330A
- Voltage - Forward (Vf) (Max) @ If: 1.22V @ 942A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 15mA @ 120V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-205AB, DO-9, Stud
- Supplier Device Package: DO-205AB, DO-9
- Operating Temperature - Junction: -40°C ~ 180°C
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Package: DO-205AB, DO-9, Stud |
Stock6,800 |
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120V | 330A | 1.22V @ 942A | Standard Recovery >500ns, > 200mA (Io) | - | 15mA @ 120V | - | Chassis, Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -40°C ~ 180°C |
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Vishay Semiconductor Diodes Division |
DIODE GP 800V 150A DO-8
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 150A
- Voltage - Forward (Vf) (Max) @ If: 1.47V @ 600A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-205AA, DO-8, Stud
- Supplier Device Package: DO-205AA (DO-8)
- Operating Temperature - Junction: -40°C ~ 180°C
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Package: DO-205AA, DO-8, Stud |
Stock5,888 |
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800V | 150A | 1.47V @ 600A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis, Stud Mount | DO-205AA, DO-8, Stud | DO-205AA (DO-8) | -40°C ~ 180°C |
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Vishay Semiconductor Diodes Division |
DIODE HYPERFAST 15A 600V D2PAK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 2.2V @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 29ns
- Current - Reverse Leakage @ Vr: 50µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D2PAK)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,992 |
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600V | 15A | 2.2V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 29ns | 50µA @ 600V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB (D2PAK) | -65°C ~ 175°C |
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TSC America Inc. |
DIODE, HIGH EFFICIENT, 8A, 400V,
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 5µA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 |
Stock4,304 |
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400V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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ON Semiconductor |
DIODE ULT FAST 1A 200V SMA2
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 2µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: SMA
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-214AC, SMA |
Stock2,592 |
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200V | 2A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 2µA @ 200V | - | Surface Mount | DO-214AC, SMA | SMA | -65°C ~ 175°C |
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Micro Commercial Co |
DIODE GEN PURP 50V DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 10µA @ 50V
- Capacitance @ Vr, F: 65pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-201AD, Axial |
Stock7,792 |
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50V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 10µA @ 50V | 65pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 600MA MPG06
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 600mA
- Voltage - Forward (Vf) (Max) @ If: 950mV @ 600mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25ns
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: 9pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: MPG06, Axial
- Supplier Device Package: MPG06
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: MPG06, Axial |
Stock7,488 |
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200V | 600mA | 950mV @ 600mA | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 200V | 9pF @ 4V, 1MHz | Through Hole | MPG06, Axial | MPG06 | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 2A, 2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 400µA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: DO-214AA, SMB |
Stock3,184 |
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20V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 20V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 125°C |
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TSC America Inc. |
DIODE, SUPER FAST, 1A, 150V, 35N
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 5µA @ 150V
- Capacitance @ Vr, F: 16pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AC, SMA |
Stock2,288 |
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150V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 150V | 16pF @ 1V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE SCHOTTKY 60V 2A DO15
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 40V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-15
- Operating Temperature - Junction: -65°C ~ 125°C
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Package: DO-204AC, DO-15, Axial |
Stock7,200 |
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60V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | DO-204AC, DO-15, Axial | DO-15 | -65°C ~ 125°C |
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TSC America Inc. |
DIODE, 1A, 100V, DO-214AA (SMB)
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 100V
- Capacitance @ Vr, F: 12pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AA, SMB |
Stock6,064 |
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100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 100V | 12pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 200MA SOT23
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 100nA @ 100V
- Capacitance @ Vr, F: 5pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock7,056 |
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100V | 200mA | 1.25V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 50ns | 100nA @ 100V | 5pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | -55°C ~ 150°C |
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Micro Commercial Co |
DIODE GEN PURP 200V 2A DO214AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-214AC, SMA |
Stock6,288 |
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200V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | 15pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -65°C ~ 175°C |
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Diodes Incorporated |
DIODE GEN PURP 75V 150MA SOT323
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 75V
- Current - Average Rectified (Io): 150mA
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 1µA @ 75V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: SC-70, SOT-323 |
Stock4,585,260 |
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75V | 150mA | 1.25V @ 150mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 1µA @ 75V | 2pF @ 0V, 1MHz | Surface Mount | SC-70, SOT-323 | SOT-323 | -65°C ~ 150°C |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 75V 200MA SOD523F
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 75V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 5µA @ 75V
- Capacitance @ Vr, F: 4pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523F
- Supplier Device Package: SOD-523F
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: SC-79, SOD-523F |
Stock96,000 |
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75V | 200mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | 4pF @ 0V, 1MHz | Surface Mount | SC-79, SOD-523F | SOD-523F | -55°C ~ 150°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 100V 5A TO277A
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 140 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A
- Operating Temperature - Junction: 150°C
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Package: - |
Stock11,727 |
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100 V | 5A | 700 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 140 µA @ 100 V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A | 150°C |
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WeEn Semiconductors |
BYC30Y-600P/IITO220-2L/STANDARD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 30 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: IITO-220-2L
- Operating Temperature - Junction: 175°C
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Package: - |
Request a Quote |
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600 V | 30A | 2.75 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 600 V | - | Through Hole | TO-220-2 | IITO-220-2L | 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 12A DO214AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
- Capacitance @ Vr, F: 78pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock5,295 |
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1000 V | 12A | 1.1 V @ 12 A | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 1000 V | 78pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Microchip Technology |
DIODE GEN PURP 800V 85A DO5
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 85A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 25 µA @ 800 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5 (DO-203AB)
- Operating Temperature - Junction: -55°C ~ 175°C
|
Package: - |
Request a Quote |
|
800 V | 85A | 1.1 V @ 200 A | Standard Recovery >500ns, > 200mA (Io) | - | 25 µA @ 800 V | - | Stud Mount | DO-203AB, DO-5, Stud | DO-5 (DO-203AB) | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 1A DO214AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 50 V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
50 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 50 V | 10pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Microchip Technology |
POWER SCHOTTKY
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
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Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
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Panjit International Inc. |
DIODE GEN PURP 600V 1A SMBF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 600 V
- Capacitance @ Vr, F: 11pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-221AA, SMB Flat Leads
- Supplier Device Package: SMBF
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
600 V | 1A | 1.7 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 1 µA @ 600 V | 11pF @ 4V, 1MHz | Surface Mount | DO-221AA, SMB Flat Leads | SMBF | -55°C ~ 150°C |
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Diotec Semiconductor |
ULTRAFAST P600 400V 6A 75NS 175C
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 400 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: P600, Axial
- Supplier Device Package: P600
- Operating Temperature - Junction: -50°C ~ 175°C
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Package: - |
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400 V | 6A | 1.25 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 10 µA @ 400 V | - | Through Hole | P600, Axial | P600 | -50°C ~ 175°C |
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Micro Commercial Co |
Interface
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 nA @ 200 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
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200 V | 5A | 900 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 nA @ 200 V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 175°C |