Page 28 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

STTH8R06G
STMicroelectronics

DIODE GEN PURP 600V 8A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock14,292
BAT54WS-7
Diodes Incorporated

DIODE SCHOTTKY 30V 100MA SOD323

Package: SC-76, SOD-323

Stock53,832
SMB5817
Micro Commercial Co

DIODE SCHOTTKY 20V 1A DO214AA

Package: DO-214AA, SMB

Stock5,088
R7002004XXUA
Powerex Inc.

DIODE GEN PURP 2KV 450A DO200

Package: DO-200AA, A-PUK

Stock5,328
VS-70HFLR40S02
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 70A DO203AB

Package: DO-203AB, DO-5, Stud

Stock4,640
SF3006PT C0G
TSC America Inc.

DIODE, SUPER FAST, 30A, 400V, 35

Package: TO-247-3

Stock4,800
VS-10ETF12FPPBF
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 10A TO220FP

Package: TO-220-2 Full Pack

Stock3,488
VSB2045-M3/73
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 6.5A P600

Package: P600, Axial

Stock3,328
RS3JHE3_A/I
Vishay Semiconductor Diodes Division

DIODE FAST REC 600V 3A DO214AB

Package: DO-214AB, SMC

Stock5,744
BYD13MGPHE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A DO204AL

Package: DO-204AL, DO-41, Axial

Stock2,096
GPP20A-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 2A DO204AC

Package: DO-204AC, DO-15, Axial

Stock3,728
UF4005HR1G
TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 600V,

Package: DO-204AL, DO-41, Axial

Stock4,816
BYG21M R3G
TSC America Inc.

DIODE, FAST, 1.5A, 1000V, 120NS,

Package: DO-214AC, SMA

Stock2,976
V2PM15-M3/H
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 150V 2A MICROSMP

Package: DO-220AA

Stock5,712
MSS1P6-M3/89A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 1A MICROSMP

Package: MicroSMP

Stock320,280
JANTX1N1614
Microsemi Corporation

DIODE GEN PURP 200V 15A DO203AA

Package: DO-203AA, DO-4, Stud

Stock7,792
NSB8JT-E3/81
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 8A TO263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock19,200
PMEG3010BEP,115
Nexperia USA Inc.

DIODE SCHOTTKY 30V 1A SOD128

Package: SOD-128

Stock23,196
MURS360-E3/57T
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 3A DO214AB

Package: DO-214AB, SMC

Stock1,036,224
RL107GP-TP
Micro Commercial Co

DIODE GEN PURP 1KV 1A A-405

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
STTH8R06G	STMicroelectronics	DIODE GEN PURP 600V 8A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 2.9V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45ns Current - Reverse Leakage @ Vr: 30µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C (Max)	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock14,292	600V	8A	2.9V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	45ns	30µA @ 600V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	175°C (Max)
BAT54WS-7	Diodes Incorporated	DIODE SCHOTTKY 30V 100MA SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 2µA @ 25V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -65°C ~ 150°C	Package: SC-76, SOD-323	Stock53,832	30V	100mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	5ns	2µA @ 25V	10pF @ 1V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-65°C ~ 150°C
SMB5817	Micro Commercial Co	DIODE SCHOTTKY 20V 1A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMBJ) Operating Temperature - Junction: -55°C ~ 125°C	Package: DO-214AA, SMB	Stock5,088	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMBJ)	-55°C ~ 125°C
R7002004XXUA	Powerex Inc.	DIODE GEN PURP 2KV 450A DO200 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2000V Current - Average Rectified (Io): 450A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 11µs Current - Reverse Leakage @ Vr: 50mA @ 2000V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-200AA, A-PUK Supplier Device Package: DO-200AA, R62 Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-200AA, A-PUK	Stock5,328	2000V	450A	1.6V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	11µs	50mA @ 2000V	-	Chassis, Stud Mount	DO-200AA, A-PUK	DO-200AA, R62	-65°C ~ 175°C
VS-70HFLR40S02	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 70A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.85V @ 219.8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 100µA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -40°C ~ 125°C	Package: DO-203AB, DO-5, Stud	Stock4,640	400V	70A	1.85V @ 219.8A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	100µA @ 400V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-40°C ~ 125°C
SF3006PT C0G	TSC America Inc.	DIODE, SUPER FAST, 30A, 400V, 35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: 175pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (TO-3P) Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-247-3	Stock4,800	400V	30A	1.3V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
VS-10ETF12FPPBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 10A TO220FP Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.33V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 310ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220AC Full Pack Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-220-2 Full Pack	Stock3,488	1200V	10A	1.33V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	310ns	-	-	Through Hole	TO-220-2 Full Pack	TO-220AC Full Pack	-40°C ~ 150°C
VSB2045-M3/73	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 45V 6.5A P600 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 6.5A Voltage - Forward (Vf) (Max) @ If: 580mV @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.2mA @ 45V Capacitance @ Vr, F: 2050pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: P600, Axial Supplier Device Package: P600 Operating Temperature - Junction: -40°C ~ 150°C	Package: P600, Axial	Stock3,328	45V	6.5A	580mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.2mA @ 45V	2050pF @ 4V, 1MHz	Through Hole	P600, Axial	P600	-40°C ~ 150°C
RS3JHE3_A/I	Vishay Semiconductor Diodes Division	DIODE FAST REC 600V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: 34pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AB, SMC	Stock5,744	600V	3A	1.3V @ 2.5A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	10µA @ 600V	34pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
BYD13MGPHE3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 7pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AL, DO-41, Axial	Stock2,096	1000V	1A	1.2V @ 1A	Standard Recovery >500ns, > 200mA (Io)	3µs	5µA @ 1000V	7pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
GPP20A-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 2A DO204AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-204AC, DO-15, Axial	Stock3,728	50V	2A	1.1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	-	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
UF4005HR1G	TSC America Inc.	DIODE, HIGH EFFICIENT, 1A, 600V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 17pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-204AL, DO-41, Axial	Stock4,816	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
BYG21M R3G	TSC America Inc.	DIODE, FAST, 1.5A, 1000V, 120NS, Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 120ns Current - Reverse Leakage @ Vr: 1µA @ 1000V Capacitance @ Vr, F: 13pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AC, SMA	Stock2,976	1000V	1.5A	1.6V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	120ns	1µA @ 1000V	13pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
V2PM15-M3/H	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 150V 2A MICROSMP Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 150V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: MicroSMP Operating Temperature - Junction: -40°C ~ 175°C	Package: DO-220AA	Stock5,712	150V	2A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 150V	100pF @ 4V, 1MHz	Surface Mount	DO-220AA	MicroSMP	-40°C ~ 175°C
MSS1P6-M3/89A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 1A MICROSMP Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 680mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150µA @ 60V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: MicroSMP Supplier Device Package: MicroSMP Operating Temperature - Junction: -55°C ~ 150°C	Package: MicroSMP	Stock320,280	60V	1A	680mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 60V	40pF @ 4V, 1MHz	Surface Mount	MicroSMP	MicroSMP	-55°C ~ 150°C
JANTX1N1614	Microsemi Corporation	DIODE GEN PURP 200V 15A DO203AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 200V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-203AA, DO-4, Stud	Stock7,792	200V	15A	1.5V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 200V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-203AA	-65°C ~ 175°C
NSB8JT-E3/81	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 8A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: 55pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock19,200	600V	8A	1.1V @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 600V	55pF @ 4V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-55°C ~ 150°C
PMEG3010BEP,115	Nexperia USA Inc.	DIODE SCHOTTKY 30V 1A SOD128 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 30V Capacitance @ Vr, F: 170pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: CFP5 Operating Temperature - Junction: 150°C (Max)	Package: SOD-128	Stock23,196	30V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 30V	170pF @ 1V, 1MHz	Surface Mount	SOD-128	CFP5	150°C (Max)
MURS360-E3/57T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-214AB, SMC	Stock1,036,224	600V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-65°C ~ 175°C
RL107GP-TP	Micro Commercial Co	DIODE GEN PURP 1KV 1A A-405 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: A-405 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	1000 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 1000 V	15pF @ 4V, 1MHz	Through Hole	Axial	A-405	-55°C ~ 150°C
JANS1N5807-TR	Microchip Technology	DIODE GEN PURP 50V 6A B AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	50 V	6A	875 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	-	-	Through Hole	B, Axial	B, Axial	-65°C ~ 175°C
S40A8	Microchip Technology	DIODE GEN PURP 800V 40A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 40 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -	Package: -	Request a Quote	800 V	40A	1.1 V @ 40 A	Standard Recovery >500ns, > 200mA (Io)	3 µs	-	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5 (DO-203AB)	-
JANTXV1N6872UTK2-TR	Microchip Technology	DIODE SCHOTTKY THINKEY2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: ThinKey™2 Supplier Device Package: ThinKey™2 Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	Surface Mount	ThinKey™2	ThinKey™2	-
RF071L4STFTE25	Rohm Semiconductor	DIODE GEN PURP 400V 1A PMDS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 700 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: PMDS Operating Temperature - Junction: 150°C	Package: -	Stock3,540	400 V	1A	1.25 V @ 700 mA	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	10 µA @ 400 V	-	Surface Mount	DO-214AC, SMA	PMDS	150°C
UF2DF_R1_00001	Panjit International Inc.	DIODE GEN PURP 200V 2A SMBF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: 37pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AA, SMB Flat Leads Supplier Device Package: SMBF Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	200 V	2A	1 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	1 µA @ 200 V	37pF @ 4V, 1MHz	Surface Mount	DO-221AA, SMB Flat Leads	SMBF	-55°C ~ 150°C
SICPT30120YA-BP	Micro Commercial Co	SCHOTTKY DIODES Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.58 V @ 30 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 30 µA @ 1.2 kV Capacitance @ Vr, F: 2179pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Request a Quote	1200 V	30A	1.58 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 1.2 kV	2179pF @ 0V, 1MHz	Through Hole	TO-247-2	TO-247AD	-55°C ~ 175°C
1N2137RA	Solid State Inc.	DIODE GEN PURP REV 500V 70A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 500 V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25 µA @ 500 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C	Package: -	Request a Quote	500 V	70A	1.25 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	25 µA @ 500 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 200°C
AM01JB	Sanken Electric USA Inc.	HIGH VOLTAGE RECTIFIER DIODE (AX Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 750 V Current - Average Rectified (Io): 10mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 750 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: Axial Operating Temperature - Junction: -40°C ~ 150°C	Package: -	Request a Quote	750 V	10mA	1 V @ 10 mA	Small Signal =< 200mA (Io), Any Speed	-	10 µA @ 750 V	-	Through Hole	Axial	Axial	-40°C ~ 150°C