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Infineon Technologies |
DIODE GEN PURP 600V 20A WAFER
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 20A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 27µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Sawn on foil
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: Die |
Stock4,880 |
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600V | 20A (DC) | 1.7V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURPOSE DO-204AL
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock5,584 |
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- | - | - | - | - | - | - | - | - | - | - |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO204AL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 250ns
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AL, DO-41, Axial |
Stock2,080 |
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600V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 600V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Diodes Incorporated |
DIODE GEN PURP 600V 1A DO41
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75ns
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-41
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-204AL, DO-41, Axial |
Stock2,576 |
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600V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 600V | 10pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 1.7KV 10A TO3PF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1700V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 2.2V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 140ns
- Current - Reverse Leakage @ Vr: 100µA @ 1700V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-3PF Variant, 2 Leads
- Supplier Device Package: TO-3PF
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: TO-3PF Variant, 2 Leads |
Stock35,760 |
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1700V | 10A | 2.2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 100µA @ 1700V | - | Through Hole | TO-3PF Variant, 2 Leads | TO-3PF | -65°C ~ 150°C |
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Powerex Inc. |
DIODE GEN REV 600V 150A DO205AA
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 150A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2.3µs
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-205AA, DO-8, Stud
- Supplier Device Package: -
- Operating Temperature - Junction: -40°C ~ 125°C
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Package: DO-205AA, DO-8, Stud |
Stock5,792 |
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600V | 150A | - | Standard Recovery >500ns, > 200mA (Io) | 2.3µs | - | - | Stud Mount | DO-205AA, DO-8, Stud | - | -40°C ~ 125°C |
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Powerex Inc. |
DIODE GEN PURP 200V 160A DO205AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 160A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 12mA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-205AB, DO-9, Stud
- Supplier Device Package: DO-205AB, DO-9
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-205AB, DO-9, Stud |
Stock2,512 |
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200V | 160A | - | Standard Recovery >500ns, > 200mA (Io) | - | 12mA @ 200V | - | Chassis, Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 225V 200MA DO213
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 225V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 25nA @ 225V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-213AA (Glass)
- Supplier Device Package: DO-213AA
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-213AA (Glass) |
Stock5,584 |
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225V | 200mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 25nA @ 225V | - | Surface Mount | DO-213AA (Glass) | DO-213AA | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 8A ITO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 10µA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack, Isolated Tab
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: TO-220-2 Full Pack, Isolated Tab |
Stock13,008 |
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400V | 8A | 1.25V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -40°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 45V 20A 5DFN
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 640mV @ 20A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 400µA @ 45V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN, 5 Leads
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: 8-PowerTDFN, 5 Leads |
Stock3,200 |
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45V | 20A | 640mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 45V | - | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 10A,
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 150V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D2PAK)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,968 |
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150V | 10A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB (D2PAK) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 5.5A DPAK
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 5.5A
- Voltage - Forward (Vf) (Max) @ If: 770mV @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 100V
- Capacitance @ Vr, F: 183pF @ 5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: D-PAK (TO-252AA)
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock7,408 |
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100V | 5.5A | 770mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 100V | 183pF @ 5V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
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Micro Commercial Co |
DIODE GEN PURP 50V 6A R6
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 10µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: R6, Axial
- Supplier Device Package: R-6
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: R6, Axial |
Stock4,352 |
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50V | 6A | 1.1V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 50V | - | Through Hole | R6, Axial | R-6 | -65°C ~ 150°C |
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TSC America Inc. |
DIODE, SUPER FAST, 3A, 150V, 35N
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 5µA @ 150V
- Capacitance @ Vr, F: 80pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-201AD, Axial |
Stock2,688 |
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150V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 150V | 80pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO204AL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: 22pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-204AL, DO-41, Axial |
Stock360,000 |
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200V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | 22pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO204AL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -
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Package: DO-204AL, DO-41, Axial |
Stock6,832 |
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200V | 1A | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | - |
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Microsemi Corporation |
DIODE GEN PURP 150V 1A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25ns
- Current - Reverse Leakage @ Vr: 1µA @ 150V
- Capacitance @ Vr, F: 25pF @ 10V, 1MHz
- Mounting Type: Through Hole
- Package / Case: A, Axial
- Supplier Device Package: -
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: A, Axial |
Stock15,240 |
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150V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 150V | 25pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
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Diodes Incorporated |
DIODE SCHOTT 40V 4A X3-TSN1608-2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 610 mV @ 4 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 150 µA @ 40 V
- Capacitance @ Vr, F: 88pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 0603 (1608 Metric)
- Supplier Device Package: X3-TSN1608-2
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock28,242 |
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40 V | 4A | 610 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150 µA @ 40 V | 88pF @ 4V, 1MHz | Surface Mount | 0603 (1608 Metric) | X3-TSN1608-2 | -55°C ~ 150°C |
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Vishay |
SWITCHING DIODE GENPURP SOT23
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 70 V
- Current - Average Rectified (Io): 350mA
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4 ns
- Current - Reverse Leakage @ Vr: 100 nA @ 50 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
- Operating Temperature - Junction: 150°C
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Package: - |
Request a Quote |
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70 V | 350mA | 1.1 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 100 nA @ 50 V | - | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 150°C |
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Microchip Technology |
DIODE POWER SCHOTTKY
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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onsemi |
DIODE SWITCHING 70V SOT-23
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 50V 8A TO263AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 50 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D2PAK)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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50 V | 8A | 950 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 50 V | - | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263AB (D2PAK) | -55°C ~ 150°C |
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Diotec Semiconductor |
IC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.5 µs
- Current - Reverse Leakage @ Vr: 5 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: SMC (DO-214AB)
- Operating Temperature - Junction: -50°C ~ 150°C
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Package: - |
Request a Quote |
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600 V | 3A | 1 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 5 µA @ 600 V | - | Surface Mount | DO-214AB, SMC | SMC (DO-214AB) | -50°C ~ 150°C |
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Vishay |
5A, 200V, DFN3820A TMBS RECT.
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 1.8A
- Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 200 V
- Capacitance @ Vr, F: 285pF @ 4V, 1MHz
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 2-VDFN
- Supplier Device Package: DFN3820A
- Operating Temperature - Junction: -40°C ~ 175°C
|
Package: - |
Request a Quote |
|
200 V | 1.8A | 850 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 200 V | 285pF @ 4V, 1MHz | Surface Mount, Wettable Flank | 2-VDFN | DFN3820A | -40°C ~ 175°C |
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Solid State Inc. |
DIODE GEN PURP REV 400V 275A DO9
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 275A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 75 µA @ 400 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-205AB, DO-9, Stud
- Supplier Device Package: DO-9
- Operating Temperature - Junction: -65°C ~ 190°C
|
Package: - |
Request a Quote |
|
400 V | 275A | 1.3 V @ 300 A | Standard Recovery >500ns, > 200mA (Io) | - | 75 µA @ 400 V | - | Stud Mount | DO-205AB, DO-9, Stud | DO-9 | -65°C ~ 190°C |
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Micro Commercial Co |
Interface
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 60 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
60 V | 3A | 500 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 60 V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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KYOCERA AVX |
DIODE SCHOT 45V 5A TO220 FM
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 540 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 350 µA @ 45 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220-2 Full-Mold
- Operating Temperature - Junction: -40°C ~ 150°C
|
Package: - |
Request a Quote |
|
45 V | 5A | 540 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 350 µA @ 45 V | - | Through Hole | TO-220-2 Full Pack | TO-220-2 Full-Mold | -40°C ~ 150°C |
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Panjit International Inc. |
DIODE GEN PURP 800V 1A DO41
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 100 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 800 V
- Capacitance @ Vr, F: 17pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-41
- Operating Temperature - Junction: -55°C ~ 150°C
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800 V | 1A | 1.7 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 1 µA @ 800 V | 17pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -55°C ~ 150°C |