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Infineon Technologies |
DIODE GEN PURP 80V 250MA SOT323
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io): 250mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 1µA @ 75V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323-3
- Operating Temperature - Junction: 150°C (Max)
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Package: SC-70, SOT-323 |
Stock5,984 |
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80V | 250mA (DC) | 1.25V @ 150mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 1µA @ 75V | 2pF @ 0V, 1MHz | Surface Mount | SC-70, SOT-323 | PG-SOT323-3 | 150°C (Max) |
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Infineon Technologies |
DIODE GEN PURP 1.2KV 15A WAFER
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 15A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 15A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 27µA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Sawn on foil
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: Die |
Stock2,192 |
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1200V | 15A (DC) | 1.6V @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 220V 2A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 220V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 500nA @ 220V
- Capacitance @ Vr, F: 10pF @ 10V, 1MHz
- Mounting Type: Through Hole
- Package / Case: A, Axial
- Supplier Device Package: -
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: A, Axial |
Stock4,224 |
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220V | 2A | 1.6V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 220V | 10pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 500MA DO204
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 100mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 300ns
- Current - Reverse Leakage @ Vr: 5µA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AL, DO-41, Axial |
Stock4,880 |
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1200V | 500mA | 1.8V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 1200V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Semtech Corporation |
DIODE GEN PURP 15KV 500MA MODULE
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 15000V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 42V @ 800mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2µs
- Current - Reverse Leakage @ Vr: 1µA @ 15000V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: Module
- Supplier Device Package: -
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: Module |
Stock6,672 |
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15000V | 500mA | 42V @ 800mA | Fast Recovery =< 500ns, > 200mA (Io) | 2µs | 1µA @ 15000V | - | Chassis, Stud Mount | Module | - | -55°C ~ 150°C |
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Powerex Inc. |
DIODE GEN PURP 1.5KV 250A DO205
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1500V
- Current - Average Rectified (Io): 250A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 250A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-205AB, DO-9, Stud
- Supplier Device Package: -
- Operating Temperature - Junction: -40°C ~ 200°C
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Package: DO-205AB, DO-9, Stud |
Stock4,832 |
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1500V | 250A | 1.3V @ 250A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis, Stud Mount | DO-205AB, DO-9, Stud | - | -40°C ~ 200°C |
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GeneSiC Semiconductor |
DIODE GEN PURP REV 400V 40A DO5
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 40A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 40A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 200ns
- Current - Reverse Leakage @ Vr: 25µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -40°C ~ 125°C
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Package: DO-203AB, DO-5, Stud |
Stock5,776 |
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400V | 40A | 1V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 25µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 8A TO263AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 800V
- Capacitance @ Vr, F: 55pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4,384 |
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800V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | 55pF @ 4V, 1MHz | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A ITO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.75V @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 30µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack, Isolated Tab
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-220-2 Full Pack, Isolated Tab |
Stock4,960 |
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600V | 8A | 1.75V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 30µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -55°C ~ 150°C |
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SMC Diode Solutions |
DIODE GEN PURP 100V 3A SMB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2.5µs
- Current - Reverse Leakage @ Vr: 5µA @ 100V
- Capacitance @ Vr, F: 60pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: SMB (DO-214AA)
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-214AA, SMB |
Stock4,736 |
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100V | 3A | 1.2V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 100V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB (DO-214AA) | -65°C ~ 150°C |
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SMC Diode Solutions |
DIODE GEN PURP 800V 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 800V
- Capacitance @ Vr, F: 30pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-201AD, Axial |
Stock4,288 |
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800V | 3A | 1.2V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 800V | 30pF @ 0V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 600V 15A TO220
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 80ns
- Current - Reverse Leakage @ Vr: 250µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220 [K]
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 |
Stock15,696 |
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600V | 15A | 1.8V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | 250µA @ 600V | - | Through Hole | TO-220-2 | TO-220 [K] | -55°C ~ 175°C |
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Nexperia USA Inc. |
BAS16GW/SOD123/SOD2
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
- Operating Temperature - Junction: -
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Package: SOD-123 |
Stock22,086 |
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100V | - | 1.25V @ 150mA | Small Signal =< 200mA (Io), Any Speed | 4ns | - | 1.5pF @ 0V, 1MHz | Surface Mount | SOD-123 | SOD-123 | - |
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Diodes Incorporated |
DIODE GEN PURP 200V 1A SMA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: 20pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: SMA
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-214AC, SMA |
Stock1,053,960 |
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200V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | 20pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | SMA | -65°C ~ 150°C |
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Nexperia USA Inc. |
DIODE SCHOTTKY 10V 2A SOD323F
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 10V
- Current - Average Rectified (Io): 2A (DC)
- Voltage - Forward (Vf) (Max) @ If: 460mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 3mA @ 10V
- Capacitance @ Vr, F: 50pF @ 5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-90, SOD-323F
- Supplier Device Package: SOD-323F
- Operating Temperature - Junction: 150°C (Max)
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Package: SC-90, SOD-323F |
Stock759,768 |
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10V | 2A (DC) | 460mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 10V | 50pF @ 5V, 1MHz | Surface Mount | SC-90, SOD-323F | SOD-323F | 150°C (Max) |
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Central Semiconductor Corp |
DIODE SCHOTTKY 100V 1A SMA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 100 V
- Capacitance @ Vr, F: 29pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: SMA
- Operating Temperature - Junction: -65°C ~ 150°C
|
Package: - |
Request a Quote |
|
100 V | 1A | 850 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 100 V | 29pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | SMA | -65°C ~ 150°C |
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Microchip Technology |
DIODE GEN PURP 50V 70A DO5
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 70A
- Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 150 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 60 ns
- Current - Reverse Leakage @ Vr: 25 µA @ 50 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5 (DO-203AB)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Request a Quote |
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50 V | 70A | 1.18 V @ 150 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 25 µA @ 50 V | - | Stud Mount | DO-203AB, DO-5, Stud | DO-5 (DO-203AB) | -65°C ~ 175°C |
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Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 600V 3A DO214AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2.5 µs
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Capacitance @ Vr, F: 60pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
|
600 V | 3A | 1.15 V @ 2.5 A | Standard Recovery >500ns, > 200mA (Io) | 2.5 µs | 10 µA @ 600 V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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SMC Diode Solutions |
650V, 10A, DFN88, SIC SCHOTTKY D
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock2,499 |
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- | - | - | - | - | - | - | - | - | - | - |
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Micro Commercial Co |
DIODE GEN PURP 200V 1.5A DO15
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 200 V
- Capacitance @ Vr, F: 20pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-15
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
|
200 V | 1.5A | 1.3 V @ 1.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 200 V | 20pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-15 | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 490 mV @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 600 µA @ 40 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: PowerDI™ 5
- Supplier Device Package: PowerDI™ 5
- Operating Temperature - Junction: -65°C ~ 150°C
|
Package: - |
Request a Quote |
|
40 V | 10A | 490 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 600 µA @ 40 V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -65°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 90V 2A DO204AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 90 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 90 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-204AC (DO-15)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
90 V | 2A | 850 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 90 V | - | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
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Microchip Technology |
DIODE GEN PURP 400V 1A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150 ns
- Current - Reverse Leakage @ Vr: 500 nA @ 400 V
- Capacitance @ Vr, F: 35pF @ 12V, 1MHz
- Mounting Type: Through Hole
- Package / Case: A, Axial
- Supplier Device Package: A, Axial
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: - |
Request a Quote |
|
400 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 500 nA @ 400 V | 35pF @ 12V, 1MHz | Through Hole | A, Axial | A, Axial | -65°C ~ 175°C |
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KYOCERA AVX |
SCHOTTKY DIODES
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 880 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200 µA @ 150 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: 1206 (3216 Metric)
- Supplier Device Package: 1206
- Operating Temperature - Junction: -55°C ~ 125°C
|
Package: - |
Request a Quote |
|
150 V | 2A | 880 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 150 V | - | Surface Mount | 1206 (3216 Metric) | 1206 | -55°C ~ 125°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1A SOD123W
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 600 V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123W
- Supplier Device Package: SOD-123W
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock41,955 |
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600 V | 1A | 1.5 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 600 V | 15pF @ 4V, 1MHz | Surface Mount | SOD-123W | SOD-123W | -55°C ~ 150°C |
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Luminus Devices Inc. |
DIODE 1200V-3A TO252-2L
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 3 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 12 µA @ 1.2 kV
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252-2L
- Operating Temperature - Junction: -55°C ~ 175°C
|
Package: - |
Request a Quote |
|
1200 V | 3A | 1.35 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 12 µA @ 1.2 kV | - | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252-2L | -55°C ~ 175°C |
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Diotec Semiconductor |
ULTRFAST P600 800V 6A 100NS 175C
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 100 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 800 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: P600, Axial
- Supplier Device Package: P600
- Operating Temperature - Junction: -50°C ~ 175°C
|
Package: - |
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800 V | 6A | 1.7 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 10 µA @ 800 V | - | Through Hole | P600, Axial | P600 | -50°C ~ 175°C |
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Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 200V 1A MICROSMP
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 970 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 23 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 200 V
- Capacitance @ Vr, F: 6pF @ 200V
- Mounting Type: Surface Mount
- Package / Case: MicroSMP
- Supplier Device Package: MicroSMP (DO-219AD)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock888 |
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200 V | 1A | 970 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 23 ns | 1 µA @ 200 V | 6pF @ 200V | Surface Mount | MicroSMP | MicroSMP (DO-219AD) | -55°C ~ 175°C |