Page 40 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

VS-8EWF12STRRPBF
Vishay Semiconductor Diodes Division

DIODE FAST RECOVERY 8A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,600
SB040-E3/73
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 600MA MPG06

Package: MPG06, Axial

Stock5,712
VS-31DQ05TR
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 3.3A C16

Package: C-16, Axial

Stock7,504
S85DR
GeneSiC Semiconductor

DIODE GEN PURP REV 200V 85A DO5

Package: DO-203AB, DO-5, Stud

Stock2,144
VS-1N1201RA
Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 12A DO203AA

Package: DO-203AA, DO-4, Stud

Stock3,360
VS-20ETF04STRR-M3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 20A TO263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,584
AR4PK-M3/86A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 800V 1.8A TO277A

Package: TO-277, 3-PowerDFN

Stock3,376
SS8P2LHM3_A/H
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V 8A TO277A

Package: TO-277, 3-PowerDFN

Stock5,824
CGRC504-G
Comchip Technology

DIODE GEN PURP 400V 5A DO214AB

Package: DO-214AB, SMC

Stock6,912
SS19HR3G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 9

Package: DO-214AC, SMA

Stock7,584
SS12LHRFG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 2

Package: DO-219AB

Stock3,040
BAT43W-HE3-08
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 200MA SOD123

Package: SOD-123

Stock3,744
SR106 R0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 6

Package: DO-204AL, DO-41, Axial

Stock7,456
EM2
Sanken Electric USA Inc.

DIODE GEN PURP 400V 1.2A AXIAL

Package: -

Request a Quote
MR820
Diotec Semiconductor

DIODE GEN PURP 50V 5A

Package: -

Request a Quote
RSX051VYM30FHTR
Rohm Semiconductor

DIODE SCHOTTKY 30V 500MA TUMD2M

Package: -

Stock43,608
SD175SA30A-T2
SMC Diode Solutions

DIODE SCHOTTKY 30V 30A DIE

Package: -

Request a Quote
SS110H
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 100V 1A DO214AC

Package: -

Stock56,022
W2865HA680
IXYS

DIODE GEN PURP 6.8KV 4825A W121

Package: -

Request a Quote
SS210H
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 100V 2A DO214AA

Package: -

Stock9,000

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
VS-8EWF12STRRPBF	Vishay Semiconductor Diodes Division	DIODE FAST RECOVERY 8A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 270ns Current - Reverse Leakage @ Vr: 100µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,600	1200V	8A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	270ns	100µA @ 1200V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-40°C ~ 150°C
SB040-E3/73	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 600MA MPG06 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 600mA Voltage - Forward (Vf) (Max) @ If: 550mV @ 600mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: MPG06, Axial Supplier Device Package: MPG06 Operating Temperature - Junction: -65°C ~ 125°C	Package: MPG06, Axial	Stock5,712	40V	600mA	550mV @ 600mA	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	MPG06, Axial	MPG06	-65°C ~ 125°C
VS-31DQ05TR	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 50V 3.3A C16 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3.3A Voltage - Forward (Vf) (Max) @ If: 620mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: C-16, Axial Supplier Device Package: C-16 Operating Temperature - Junction: -40°C ~ 150°C	Package: C-16, Axial	Stock7,504	50V	3.3A	620mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 50V	-	Through Hole	C-16, Axial	C-16	-40°C ~ 150°C
S85DR	GeneSiC Semiconductor	DIODE GEN PURP REV 200V 85A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 85A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 85A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 180°C	Package: DO-203AB, DO-5, Stud	Stock2,144	200V	85A	1.1V @ 85A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 180°C
VS-1N1201RA	Vishay Semiconductor Diodes Division	DIODE GEN PURP 150V 12A DO203AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 12A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2.25mA @ 150V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA Operating Temperature - Junction: -65°C ~ 200°C	Package: DO-203AA, DO-4, Stud	Stock3,360	150V	12A	1.35V @ 12A	Standard Recovery >500ns, > 200mA (Io)	-	2.25mA @ 150V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA	-65°C ~ 200°C
VS-20ETF04STRR-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 20A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 160ns Current - Reverse Leakage @ Vr: 100µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,584	400V	20A	1.3V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	160ns	100µA @ 400V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263 (D2Pak)	-40°C ~ 150°C
AR4PK-M3/86A	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 800V 1.8A TO277A Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1.8A (DC) Voltage - Forward (Vf) (Max) @ If: 1.9V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 120ns Current - Reverse Leakage @ Vr: 10µA @ 800V Capacitance @ Vr, F: 55pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-277, 3-PowerDFN	Stock3,376	800V	1.8A (DC)	1.9V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	120ns	10µA @ 800V	55pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
SS8P2LHM3_A/H	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 20V 8A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 570mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 30V Capacitance @ Vr, F: 330pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-277, 3-PowerDFN	Stock5,824	20V	8A	570mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 30V	330pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C
CGRC504-G	Comchip Technology	DIODE GEN PURP 400V 5A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: 150°C (Max)	Package: DO-214AB, SMC	Stock6,912	400V	5A	1.15V @ 5A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	150°C (Max)
SS19HR3G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 9 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 800mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 90V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AC, SMA	Stock7,584	90V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS12LHRFG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 125°C	Package: DO-219AB	Stock3,040	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
BAT43W-HE3-08	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 200MA SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 450mV @ 15mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 500nA @ 25V Capacitance @ Vr, F: 7pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: 125°C (Max)	Package: SOD-123	Stock3,744	30V	200mA (DC)	450mV @ 15mA	Small Signal =< 200mA (Io), Any Speed	5ns	500nA @ 25V	7pF @ 1V, 1MHz	Surface Mount	SOD-123	SOD-123	125°C (Max)
SR106 R0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 6 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 60V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-204AL, DO-41, Axial	Stock7,456	60V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
EM2	Sanken Electric USA Inc.	DIODE GEN PURP 400V 1.2A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1.2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	Package: -	Request a Quote	400 V	1.2A	920 mV @ 1.2 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 400 V	-	Through Hole	Axial	-	-40°C ~ 150°C
MR820	Diotec Semiconductor	DIODE GEN PURP 50V 5A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Current - Reverse Leakage @ Vr: 10 µA @ 50 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: P600, Axial Supplier Device Package: P600 Operating Temperature - Junction: -50°C ~ 150°C	Package: -	Request a Quote	50 V	5A	1.2 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	300 ns	10 µA @ 50 V	-	Through Hole	P600, Axial	P600	-50°C ~ 150°C
RSX051VYM30FHTR	Rohm Semiconductor	DIODE SCHOTTKY 30V 500MA TUMD2M Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 390 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 9.6 ns Current - Reverse Leakage @ Vr: 200 µA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: TUMD2M Operating Temperature - Junction: 150°C (Max)	Package: -	Stock43,608	30 V	500mA	390 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	9.6 ns	200 µA @ 30 V	-	Surface Mount	2-SMD, Flat Lead	TUMD2M	150°C (Max)
SD175SA30A-T2	SMC Diode Solutions	DIODE SCHOTTKY 30V 30A DIE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 490 mV @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4 mA @ 30 V Capacitance @ Vr, F: 2200pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	30 V	30A	490 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	4 mA @ 30 V	2200pF @ 5V, 1MHz	Surface Mount	Die	Die	-55°C ~ 150°C
SS110H	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 1A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 125°C	Package: -	Stock56,022	100 V	1A	500 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 100 V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C
W2865HA680	IXYS	DIODE GEN PURP 6.8KV 4825A W121 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 6800 V Current - Average Rectified (Io): 4825A Voltage - Forward (Vf) (Max) @ If: 4.04 V @ 10000 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 53 µs Current - Reverse Leakage @ Vr: 100 mA @ 6800 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AD Supplier Device Package: W121 Operating Temperature - Junction: -40°C ~ 150°C	Package: -	Request a Quote	6800 V	4825A	4.04 V @ 10000 A	Standard Recovery >500ns, > 200mA (Io)	53 µs	100 mA @ 6800 V	-	Chassis Mount	DO-200AD	W121	-40°C ~ 150°C
SS210H	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 2A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock9,000	100 V	2A	850 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 100 V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SFM16PLHE3-TP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -50°C ~ 150°C	Package: -	Request a Quote	400 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 400 V	12pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-50°C ~ 150°C
BAS116-EVL	Venkel	Rectifier,SOT-23,75V,200mA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 ns Current - Reverse Leakage @ Vr: 5 nA @ 75 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: - Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	75 V	200mA	1.25 V @ 150 mA	Small Signal =< 200mA (Io), Any Speed	3 ns	5 nA @ 75 V	2pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	-	-55°C ~ 150°C
B0540W-HF	Comchip Technology	DIODE SCHOTTKY 40V 500MA SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 510 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 20 µA @ 40 V Capacitance @ Vr, F: 170pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock9,000	40 V	500mA	510 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	4 ns	20 µA @ 40 V	170pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-55°C ~ 150°C
SIDC14D120E6X1SA4	Infineon Technologies	DIODE GP 1.2KV 15A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 15 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27 µA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	1200 V	15A	1.9 V @ 15 A	Standard Recovery >500ns, > 200mA (Io)	-	27 µA @ 1200 V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
CD214C-B360R	Bourns Inc.	DIODE SCHOTTKY 60V 3A 2SMD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 60 V Capacitance @ Vr, F: 180pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: 2-SMD Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	60 V	3A	700 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 60 V	180pF @ 4V, 1MHz	Surface Mount	2-SMD, No Lead	2-SMD	-55°C ~ 150°C
SK68L-TP	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 80 V Capacitance @ Vr, F: 200pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	80 V	6A	850 mV @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 80 V	200pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-55°C ~ 150°C
SFAF808G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 8A ITO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock3,000	600 V	8A	1.7 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 600 V	60pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
DNA30E2200PZ-TUB	IXYS	DIODE GEN PURP 2.2KV 30A TO263HV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2200 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40 µA @ 2200 V Capacitance @ Vr, F: 7pF @ 700V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263HV Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Request a Quote	2200 V	30A	1.26 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	40 µA @ 2200 V	7pF @ 700V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263HV	-55°C ~ 175°C