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Micro Commercial Co |
DIODE GEN PURP 50V 1A DO41
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 1A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-41
- Operating Temperature - Junction: -
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Package: DO-204AL, DO-41, Axial |
Stock3,248 |
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50V | 1A (DC) | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 50V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | - |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 5A GP20
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 950mV @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 5µA @ 100V
- Capacitance @ Vr, F: 95pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AA, DO-27, Axial
- Supplier Device Package: GP20
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-201AA, DO-27, Axial |
Stock2,144 |
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100V | 5A | 950mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 100V | 95pF @ 4V, 1MHz | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1.5A DO204AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-204AC (DO-15)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AC, DO-15, Axial |
Stock7,488 |
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200V | 1.5A | 1.3V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | - | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 45V 15A I2PAK
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 840mV @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200µA @ 45V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
- Supplier Device Package: I2PAK
- Operating Temperature - Junction: 175°C (Max)
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Package: TO-262-3 Long Leads, I2Pak, TO-262AA |
Stock2,336 |
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45V | 15A | 840mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 45V | - | Through Hole | TO-262-3 Long Leads, I2Pak, TO-262AA | I2PAK | 175°C (Max) |
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IXYS |
DIODE SCHOTTKY 250V 31A TO252AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 250V
- Current - Average Rectified (Io): 31A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 26ns
- Current - Reverse Leakage @ Vr: 400µA @ 250V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252AA
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock4,752 |
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250V | 31A | 1.5V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 26ns | 400µA @ 250V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | -55°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 200V 1.5A DO15
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 4.5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-15
- Operating Temperature - Junction: 150°C (Max)
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Package: DO-204AC, DO-15, Axial |
Stock167,892 |
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200V | 1.5A | 1.2V @ 4.5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Through Hole | DO-204AC, DO-15, Axial | DO-15 | 150°C (Max) |
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Diodes Incorporated |
DIODE GEN PURP 150V 2A SMA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 920mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25ns
- Current - Reverse Leakage @ Vr: 5µA @ 150V
- Capacitance @ Vr, F: 25pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: SMA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AC, SMA |
Stock336,000 |
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150V | 2A | 920mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 150V | 25pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | SMA | -55°C ~ 150°C |
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Powerex Inc. |
DIODE MODULE 2.5KV 500A DO200AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2500V
- Current - Average Rectified (Io): 500A
- Voltage - Forward (Vf) (Max) @ If: 2.25V @ 1500A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3µs
- Current - Reverse Leakage @ Vr: 50mA @ 2500V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: DO-200AB, B-PUK
- Supplier Device Package: DO-200AB, B-PUK
- Operating Temperature - Junction: -
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Package: DO-200AB, B-PUK |
Stock5,824 |
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2500V | 500A | 2.25V @ 1500A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 50mA @ 2500V | - | Chassis Mount | DO-200AB, B-PUK | DO-200AB, B-PUK | - |
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TSC America Inc. |
DIODE, ULTRA FAST, 12A, 600V, 20
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 2V @ 12A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 20ns
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-220-2 Full Pack |
Stock7,888 |
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600V | 12A | 2V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 5µA @ 600V | - | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 16A,
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 16A
- Voltage - Forward (Vf) (Max) @ If: 550mV @ 16A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 30V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: TO-220-2 |
Stock7,536 |
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30V | 16A | 550mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 125°C |
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TSC America Inc. |
DIODE, SUPER FAST, 10A, 200V, 35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 975mV @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Capacitance @ Vr, F: 70pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack, Isolated Tab
- Supplier Device Package: ITO-220AB
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-220-3 Full Pack, Isolated Tab |
Stock4,448 |
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200V | 10A | 975mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | 70pF @ 4V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, SUPER FAST, 16A, 300V, 35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300V
- Current - Average Rectified (Io): 16A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 10µA @ 300V
- Capacitance @ Vr, F: 60pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D2PAK)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5,312 |
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300V | 16A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 300V | 60pF @ 4V, 1MHz | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB (D2PAK) | -55°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 20V 3A DPAK
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200µA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK-3
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock2,096 |
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20V | 3A | 600mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 20V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK-3 | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY DPAK
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 3.5A
- Voltage - Forward (Vf) (Max) @ If: 530mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2mA @ 40V
- Capacitance @ Vr, F: 189pF @ 5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252, (D-Pak)
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,328 |
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40V | 3.5A | 530mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 40V | 189pF @ 5V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | -40°C ~ 150°C |
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TSC America Inc. |
DIODE, HIGH EFFICIENT, 1A, 400V,
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 5µA @ 400V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: T-18, Axial
- Supplier Device Package: TS-1
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: T-18, Axial |
Stock4,176 |
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400V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | 15pF @ 4V, 1MHz | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 1A DO220AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.8µs
- Current - Reverse Leakage @ Vr: 1µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-220AA
- Supplier Device Package: DO-220AA (SMP)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-220AA |
Stock4,064 |
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50V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 1µA @ 50V | - | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C |
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Sanken |
DIODE GEN PURP 600V 2A SJP
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 50µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, J-Lead
- Supplier Device Package: 2-SMD
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: 2-SMD, J-Lead |
Stock7,328 |
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600V | 2A | 1.5V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 50µA @ 600V | - | Surface Mount | 2-SMD, J-Lead | 2-SMD | -40°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 400V 1A D5A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 500µA @ 400V
- Capacitance @ Vr, F: 35pF @ 12V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: D-5A
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: SQ-MELF, A |
Stock6,912 |
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400V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500µA @ 400V | 35pF @ 12V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
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Diodes Incorporated |
DIODE SCHOTTKY 20V 1A POWERDI123
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 360mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 20V
- Capacitance @ Vr, F: 75pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: POWERDI?123
- Supplier Device Package: PowerDI? 123
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: POWERDI?123 |
Stock3,040 |
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20V | 1A | 360mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | 75pF @ 10V, 1MHz | Surface Mount | POWERDI?123 | PowerDI? 123 | -55°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A DO213AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 100V
- Capacitance @ Vr, F: 8pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AB, MELF (Glass)
- Supplier Device Package: DO-213AB
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-213AB, MELF (Glass) |
Stock39,924 |
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100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | 8pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
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Diodes Incorporated |
DIODE SCHOTTKY 40V 520MA SOD323
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 520mA
- Voltage - Forward (Vf) (Max) @ If: 500 mV @ 400 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 30 V
- Capacitance @ Vr, F: 15pF @ 30V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: SOD-323
- Operating Temperature - Junction: 150°C
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Package: - |
Request a Quote |
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40 V | 520mA | 500 mV @ 400 mA | Fast Recovery =< 500ns, > 200mA (Io) | 3 ns | 10 µA @ 30 V | 15pF @ 30V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | 150°C |
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KYOCERA AVX |
DIODE GEN PURP 600V 30A TO247-2
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 30 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 130 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247-2
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: - |
Request a Quote |
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600 V | 30A | 1.35 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 130 ns | 50 µA @ 600 V | - | Through Hole | TO-247-2 | TO-247-2 | -40°C ~ 175°C |
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Vishay General Semiconductor - Diodes Division |
DIODE AVALANCHE 200V 3A DO214AA
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20 µA @ 600 V
- Capacitance @ Vr, F: 40pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 175°C
|
Package: - |
Request a Quote |
|
200 V | 3A | 1.05 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20 µA @ 600 V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 175°C |
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Vishay General Semiconductor - Diodes Division |
DIODE SCHOTTKY 45V 12A TO277A
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45 V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 600 mV @ 12 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 45 V
- Capacitance @ Vr, F: 2350pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -40°C ~ 175°C
|
Package: - |
Request a Quote |
|
45 V | 12A | 600 mV @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 45 V | 2350pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 175°C |
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Microchip Technology |
DIODE SCHOTTKY 35V 10A U3
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 35 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 880 mV @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: U3 (SMD-0.5)
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Request a Quote |
|
35 V | 10A | 880 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | - | - | Surface Mount | 3-SMD, No Lead | U3 (SMD-0.5) | -65°C ~ 150°C |
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Panjit International Inc. |
DIODE SCHOTTKY 100V 5A SMC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 800 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: SMC (DO-214AB)
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: - |
Stock25,173 |
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100 V | 5A | 800 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 100 V | - | Surface Mount | DO-214AB, SMC | SMC (DO-214AB) | -65°C ~ 175°C |
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Microchip Technology |
DIODE GEN PURP 100V 12A TO254
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 100 V
- Capacitance @ Vr, F: 300pF @ 5V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-254-3, TO-254AA
- Supplier Device Package: TO-254
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
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100 V | 12A | 1.05 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 100 V | 300pF @ 5V, 1MHz | Through Hole | TO-254-3, TO-254AA | TO-254 | -55°C ~ 175°C |
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Panjit International Inc. |
DIODE SCHOTTKY 150V 6A ITO220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 150 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack, Isolated Tab
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
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150 V | 6A | 900 mV @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 150 V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -65°C ~ 175°C |