Page 6 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

SIDC03D60F6
Infineon Technologies

DIODE GEN PURP 600V 6A WAFER

Package: Die

Stock7,856
VS-50WQ03FNTRPBF
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 5.5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,032
US1JHE3/61T
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO214AC

Package: DO-214AC, SMA

Stock2,784
2A04G-T
Diodes Incorporated

DIODE GEN PURP 400V 2A DO15

Package: DO-204AC, DO-15, Axial

Stock72,000
VS-40HFR100M
Vishay Semiconductor Diodes Division

DIODE STD REC 40A DO5

Package: DO-203AB, DO-5, Stud

Stock6,144
VS-HFA16TB120SHM3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 16A TO263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,136
BYV29B-400HE3/81
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 8A TO263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,072
HERAF1004G C0G
TSC America Inc.

DIODE, HIGH EFFICIENT, 10A, 300V

Package: TO-220-2 Full Pack

Stock3,856
NSVR0620P2T5G
ON Semiconductor

DIODE SCHOTTKY 20V 500MA SOD923

Package: SOD-923

Stock2,128
APD240VG-E1
Diodes Incorporated

DIODE SCHOTTKY 40V 2A DO15

Package: DO-204AC, DO-15, Axial

Stock3,216
MUR130G
ON Semiconductor

DIODE GEN PURP 300V 1A AXIAL

Package: DO-204AL, DO-41, Axial

Stock3,360
1N6480-E3/96
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO213AB

Package: DO-213AB, MELF (Glass)

Stock6,736
SS110LHRVG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 1

Package: DO-219AB

Stock3,664
UF1J R1G
TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 600V,

Package: DO-204AL, DO-41, Axial

Stock7,712
CMR1U-10 TR13
Central Semiconductor Corp

DIODE GEN PURP 1KV 1A SMB

Package: DO-214AA, SMB

Stock23,670
CDS5819-1-TR
Microchip Technology

SMALL-SIGNAL SCHOTTKY

Package: -

Request a Quote
JANTXV1N3913
Microchip Technology

DIODE GEN PURP 400V 30A DO5

Package: -

Request a Quote
SR1202H-A0G
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 20V 12A DO201AD

Package: -

Request a Quote
JANTX1N6772
Microchip Technology

DIODE GEN PURP 400V 8A TO257

Package: -

Request a Quote
EM513GP-AP
Micro Commercial Co

DIODE GEN PURP 1.6KV 1A DO41

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SIDC03D60F6	Infineon Technologies	DIODE GEN PURP 600V 6A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 6A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 150°C	Package: Die	Stock7,856	600V	6A (DC)	1.6V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 150°C
VS-50WQ03FNTRPBF	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 5.5A DPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 5.5A Voltage - Forward (Vf) (Max) @ If: 460mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 30V Capacitance @ Vr, F: 590pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,032	30V	5.5A	460mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 30V	590pF @ 5V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-40°C ~ 150°C
US1JHE3/61T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AC, SMA	Stock2,784	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
2A04G-T	Diodes Incorporated	DIODE GEN PURP 400V 2A DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AC, DO-15, Axial	Stock72,000	400V	2A	1.1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	40pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-65°C ~ 175°C
VS-40HFR100M	Vishay Semiconductor Diodes Division	DIODE STD REC 40A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 125A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 190°C	Package: DO-203AB, DO-5, Stud	Stock6,144	1000V	40A	1.3V @ 125A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 190°C
VS-HFA16TB120SHM3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 16A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 3V @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90ns Current - Reverse Leakage @ Vr: 20µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,136	1200V	16A	3V @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	90ns	20µA @ 1200V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263 (D2Pak)	-55°C ~ 150°C
BYV29B-400HE3/81	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 8A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,072	400V	8A	1.25V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-40°C ~ 150°C
HERAF1004G C0G	TSC America Inc.	DIODE, HIGH EFFICIENT, 10A, 300V Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 300V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-220-2 Full Pack	Stock3,856	300V	10A	1V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 300V	80pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
NSVR0620P2T5G	ON Semiconductor	DIODE SCHOTTKY 20V 500MA SOD923 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 500mA (DC) Voltage - Forward (Vf) (Max) @ If: 520mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 10µA @ 20V Capacitance @ Vr, F: 12pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-923 Supplier Device Package: SOD-923 Operating Temperature - Junction: -55°C ~ 125°C	Package: SOD-923	Stock2,128	20V	500mA (DC)	520mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	10µA @ 20V	12pF @ 1V, 1MHz	Surface Mount	SOD-923	SOD-923	-55°C ~ 125°C
APD240VG-E1	Diodes Incorporated	DIODE SCHOTTKY 40V 2A DO15 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -65°C ~ 125°C	Package: DO-204AC, DO-15, Axial	Stock3,216	40V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	DO-204AC, DO-15, Axial	DO-15	-65°C ~ 125°C
MUR130G	ON Semiconductor	DIODE GEN PURP 300V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 300V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AL, DO-41, Axial	Stock3,360	300V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 300V	-	Through Hole	DO-204AL, DO-41, Axial	Axial	-65°C ~ 175°C
1N6480-E3/96	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1A DO213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-213AB, MELF (Glass)	Stock6,736	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 200V	8pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
SS110LHRVG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 800mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-219AB	Stock3,664	100V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 100V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
UF1J R1G	TSC America Inc.	DIODE, HIGH EFFICIENT, 1A, 600V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 17pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-204AL, DO-41, Axial	Stock7,712	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
CMR1U-10 TR13	Central Semiconductor Corp	DIODE GEN PURP 1KV 1A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-214AA, SMB	Stock23,670	1000V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	5µA @ 1000V	-	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 175°C
CDS5819-1-TR	Microchip Technology	SMALL-SIGNAL SCHOTTKY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
JANTXV1N3913	Microchip Technology	DIODE GEN PURP 400V 30A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 50 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Current - Reverse Leakage @ Vr: 15 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	400 V	30A	1.4 V @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	15 µA @ 400 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5 (DO-203AB)	-65°C ~ 150°C
SR1202H-A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 12A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 12 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 20 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	20 V	12A	550 mV @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 20 V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
JANTX1N6772	Microchip Technology	DIODE GEN PURP 400V 8A TO257 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Current - Reverse Leakage @ Vr: 10 µA @ 320 V Capacitance @ Vr, F: 200pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: TO-257-3 Supplier Device Package: TO-257 Operating Temperature - Junction: -	Package: -	Request a Quote	400 V	8A	1.6 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	10 µA @ 320 V	200pF @ 5V, 1MHz	Through Hole	TO-257-3	TO-257	-
EM513GP-AP	Micro Commercial Co	DIODE GEN PURP 1.6KV 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 1600 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	1600 V	1A	1.25 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 1600 V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
SR5200-AP	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 200 V Capacitance @ Vr, F: 400pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	200 V	5A	950 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 200 V	400pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 150°C
PMEG6030CER-QX	Nexperia USA Inc.	60 V, 3 A SCHOTTKY RECTIFIER IN Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 760 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6 ns Current - Reverse Leakage @ Vr: 60 µA @ 60 V Capacitance @ Vr, F: 100pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: 175°C	Package: -	Stock138	60 V	3A	760 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	6 ns	60 µA @ 60 V	100pF @ 1V, 1MHz	Surface Mount	SOD-123W	SOD-123W	175°C
PU1DMH	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A MICRO SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 36 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: 18pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: Micro SMA Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock17,160	200 V	1A	1.05 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	36 ns	1 µA @ 200 V	18pF @ 4V, 1MHz	Surface Mount	2-SMD, Flat Lead	Micro SMA	-55°C ~ 175°C
B5818WSHE3-TP	Micro Commercial Co	DIODE SCHOTTKY 30V 1A SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40 µA @ 30 V Capacitance @ Vr, F: 120pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 125°C	Package: -	Stock11,997	30 V	1A	550 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	40 µA @ 30 V	120pF @ 4V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-55°C ~ 125°C
LL5817-L0	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 1A MELF Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 20 V Capacitance @ Vr, F: 110pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: MELF Operating Temperature - Junction: -65°C ~ 125°C	Package: -	Request a Quote	20 V	1A	450 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 20 V	110pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF	MELF	-65°C ~ 125°C
SDURD1060	SMC Diode Solutions	DIODE GEN PURP 600V 10A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.66 V @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock4,131	600 V	10A	1.66 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 600 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	DPAK	-55°C ~ 150°C
JAN1N5819-1-TR	Microchip Technology	DIODE SCHOTTKY 45V 1A DO41 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 45 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	45 V	1A	490 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 45 V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
MB15_R1_00001	Panjit International Inc.	DIODE SCHOTTKY 50V 1A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 740 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 50 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB (DO-214AA) Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	50 V	1A	740 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 50 V	-	Surface Mount	DO-214AA, SMB	SMB (DO-214AA)	-65°C ~ 175°C