Page 65 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

SS23SHE3_A/I
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 2A DO214AC

Package: DO-214AC, SMA

Stock5,024
1N4005GL TR
Central Semiconductor Corp

DIODE GEN PURP 600V 1A DO41

Package: DO-204AL, DO-41, Axial

Stock4,048
1N5408
ON Semiconductor

DIODE GEN PURP 1KV 3A DO201AD

Package: DO-201AA, DO-27, Axial

Stock3,441,852
CSD02060A
Cree/Wolfspeed

DIODE SCHOTTKY 600V 3.5A TO220-2

Package: TO-220-2

Stock2,112
1N4152_T50A
Fairchild/ON Semiconductor

DIODE GEN PURP 40V 200MA DO35

Package: DO-204AH, DO-35, Axial

Stock6,656
A330D
Powerex Inc.

DIODE STD 1200A 400V DO-200AA

Package: -

Stock6,592
VS-302UR60A
Vishay Semiconductor Diodes Division

DIODE MODULE 600V 300A DO205AB

Package: DO-205AB, DO-9, Stud

Stock4,448
61SPB045A
SMC Diode Solutions

DIODE SCHOTTKY 45V 60A SPD-2A

Package: SPD-2A

Stock3,920
VB20120SG-E3/8W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 120V 20A TO263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,488
VS-15EWH06FNTRL-M3
Vishay Semiconductor Diodes Division

DIODE HYPERFAST 15A 600V DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,360
SS24-E3/5BT
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 2A DO214AA

Package: DO-214AA, SMB

Stock36,000
SF14G A0G
TSC America Inc.

DIODE, SUPER FAST, 1A, 200V, 35N

Package: DO-204AL, DO-41, Axial

Stock6,992
SR109 A0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 9

Package: DO-204AL, DO-41, Axial

Stock3,696
IMBD4148-HE3-08
Vishay Semiconductor Diodes Division

DIODE GEN PURP 75V 150MA SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock4,272
VSKY05401006-G4-08
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY CLP1006-G4

Package: 0402 (1006 Metric)

Stock74,664
1N2492
Microchip Technology

DIODE GEN PURP 100V 6A DO4

Package: -

Request a Quote
FFSP3065B-F085
onsemi

DIODE SIL CARB 650V 30A TO220-2

Package: -

Stock2,400
UTR4310
Microchip Technology

DIODE GEN PURP 100V 4A B AXIAL

Package: -

Request a Quote
RBLQ3LAM10TR
Rohm Semiconductor

TRENCH MOS STRUCTURE, 100V, 3A,

Package: -

Request a Quote
V5NL63HM3-H
Vishay

5A, 60V, DFN3820A TRENCH SKY REC

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SS23SHE3_A/I	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 2A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 550mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 30V Capacitance @ Vr, F: 130pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AC, SMA	Stock5,024	30V	2A	550mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 30V	130pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
1N4005GL TR	Central Semiconductor Corp	DIODE GEN PURP 600V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AL, DO-41, Axial	Stock4,048	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 175°C
1N5408	ON Semiconductor	DIODE GEN PURP 1KV 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 170°C	Package: DO-201AA, DO-27, Axial	Stock3,441,852	1000V	3A	1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 1000V	-	Through Hole	DO-201AA, DO-27, Axial	DO-201AD	-65°C ~ 170°C
CSD02060A	Cree/Wolfspeed	DIODE SCHOTTKY 600V 3.5A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3.5A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 600V Capacitance @ Vr, F: 120pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-220-2	Stock2,112	600V	3.5A	1.8V @ 2A	No Recovery Time > 500mA (Io)	0ns	200µA @ 600V	120pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
1N4152_T50A	Fairchild/ON Semiconductor	DIODE GEN PURP 40V 200MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 880mV @ 20mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 50nA @ 30V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max)	Package: DO-204AH, DO-35, Axial	Stock6,656	40V	200mA	880mV @ 20mA	Small Signal =< 200mA (Io), Any Speed	4ns	50nA @ 30V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
A330D	Powerex Inc.	DIODE STD 1200A 400V DO-200AA Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Stock6,592	-	-	-	-	-	-	-	-	-	-	-
VS-302UR60A	Vishay Semiconductor Diodes Division	DIODE MODULE 600V 300A DO205AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 942A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40mA @ 600V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -	Package: DO-205AB, DO-9, Stud	Stock4,448	600V	300A	1.4V @ 942A	Standard Recovery >500ns, > 200mA (Io)	-	40mA @ 600V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-
61SPB045A	SMC Diode Solutions	DIODE SCHOTTKY 45V 60A SPD-2A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 660mV @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.2mA @ 45V Capacitance @ Vr, F: 2400pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: SPD-2A Supplier Device Package: SPD-2A Operating Temperature - Junction: -55°C ~ 175°C	Package: SPD-2A	Stock3,920	45V	60A	660mV @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.2mA @ 45V	2400pF @ 5V, 1MHz	Surface Mount	SPD-2A	SPD-2A	-55°C ~ 175°C
VB20120SG-E3/8W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 120V 20A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.33V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 250µA @ 120V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,488	120V	20A	1.33V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	250µA @ 120V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-40°C ~ 150°C
VS-15EWH06FNTRL-M3	Vishay Semiconductor Diodes Division	DIODE HYPERFAST 15A 600V DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 2.1V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 36ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -65°C ~ 175°C	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,360	600V	15A	2.1V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	36ns	50µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-65°C ~ 175°C
SS24-E3/5BT	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 2A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 125°C	Package: DO-214AA, SMB	Stock36,000	40V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-65°C ~ 125°C
SF14G A0G	TSC America Inc.	DIODE, SUPER FAST, 1A, 200V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-204AL, DO-41, Axial	Stock6,992	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SR109 A0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 9 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 850mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 90V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-204AL, DO-41, Axial	Stock3,696	90V	1A	850mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
IMBD4148-HE3-08	Vishay Semiconductor Diodes Division	DIODE GEN PURP 75V 150MA SOT23 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 2.5µA @ 70V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 Operating Temperature - Junction: 150°C (Max)	Package: TO-236-3, SC-59, SOT-23-3	Stock4,272	75V	150mA	1V @ 10mA	Small Signal =< 200mA (Io), Any Speed	4ns	2.5µA @ 70V	-	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	150°C (Max)
VSKY05401006-G4-08	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY CLP1006-G4 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 460mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 75µA @ 30V Capacitance @ Vr, F: 140pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 0402 (1006 Metric) Supplier Device Package: CLP1006-2L Operating Temperature - Junction: 150°C (Max)	Package: 0402 (1006 Metric)	Stock74,664	40V	500mA	460mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	75µA @ 30V	140pF @ 0V, 1MHz	Surface Mount	0402 (1006 Metric)	CLP1006-2L	150°C (Max)
1N2492	Microchip Technology	DIODE GEN PURP 100V 6A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 (DO-203AA) Operating Temperature - Junction: -65°C ~ 200°C	Package: -	Request a Quote	100 V	6A	1.3 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 100 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4 (DO-203AA)	-65°C ~ 200°C
FFSP3065B-F085	onsemi	DIODE SIL CARB 650V 30A TO220-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 40 µA @ 650 V Capacitance @ Vr, F: 1280pF @ 1V, 100kHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock2,400	650 V	30A	1.7 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	1280pF @ 1V, 100kHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
UTR4310	Microchip Technology	DIODE GEN PURP 100V 4A B AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: 400pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	100 V	4A	1.1 V @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	5 µA @ 100 V	400pF @ 0V, 1MHz	Through Hole	B, Axial	B, Axial	-65°C ~ 175°C
RBLQ3LAM10TR	Rohm Semiconductor	TRENCH MOS STRUCTURE, 100V, 3A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 640 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30 µA @ 100 V Capacitance @ Vr, F: 140pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: PMDTM Operating Temperature - Junction: 175°C	Package: -	Request a Quote	100 V	3A	640 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	30 µA @ 100 V	140pF @ 4V, 1MHz	Surface Mount	SOD-128	PMDTM	175°C
V5NL63HM3-H	Vishay	5A, 60V, DFN3820A TRENCH SKY REC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 80 µA @ 60 V Capacitance @ Vr, F: 840pF @ 4V, 1MHz Mounting Type: Surface Mount, Wettable Flank Package / Case: 2-VDFN Supplier Device Package: DFN3820A Operating Temperature - Junction: -40°C ~ 150°C	Package: -	Request a Quote	60 V	5A	580 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	80 µA @ 60 V	840pF @ 4V, 1MHz	Surface Mount, Wettable Flank	2-VDFN	DFN3820A	-40°C ~ 150°C
SD820S_S2_00001	Panjit International Inc.	DIODE SCHOTTKY 20V 8A TO252 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 20 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 Operating Temperature - Junction: -55°C ~ 125°C	Package: -	Request a Quote	20 V	8A	550 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 20 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252	-55°C ~ 125°C
XBS306P11R-G	Torex Semiconductor Ltd	DIODE SCHOTTKY 60V 3A SMA-PG Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA-PG Operating Temperature - Junction: 150°C	Package: -	Request a Quote	60 V	3A	750 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 60 V	-	Surface Mount	DO-214AC, SMA	SMA-PG	150°C
CDBUR70-HF	Comchip Technology	DIODE SCHOTTKY 70V 70MA 0603 SOD Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
HER305-AP	Micro Commercial Co	DIODE GEN PURP 400V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	400 V	3A	1.3 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 400 V	80pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
RURU50100	Harris Corporation	DIODE AVALANCHE 1KV 50A TO218 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Current - Reverse Leakage @ Vr: 500 µA @ 1000 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: TO-218-1 Supplier Device Package: TO-218 Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	1000 V	50A	1.9 V @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	500 µA @ 1000 V	-	Chassis Mount	TO-218-1	TO-218	-65°C ~ 175°C
BAS100AS_R1_00001	Panjit International Inc.	DIODE SCHOTTKY 100V 500MA SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 850 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 15 nA @ 80 V Capacitance @ Vr, F: 21pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock27,549	100 V	500mA	850 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	15 nA @ 80 V	21pF @ 4V, 1MHz	Surface Mount	SOD-123	SOD-123	-55°C ~ 150°C
JANS1N5618US	Microchip Technology	DIODE GEN PURP 600V 1A A SQ-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -65°C ~ 200°C	Package: -	Request a Quote	600 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	-	-	Surface Mount	SQ-MELF, A	A, SQ-MELF	-65°C ~ 200°C
BAT42W-HE3_A-08	Vishay	SCHOTTKY DIODE SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 650 mV @ 50 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 ns Current - Reverse Leakage @ Vr: 500 nA @ 25 V Capacitance @ Vr, F: 7pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: 125°C	Package: -	Request a Quote	30 V	300mA	650 mV @ 50 mA	Fast Recovery =< 500ns, > 200mA (Io)	5 ns	500 nA @ 25 V	7pF @ 1V, 1MHz	Surface Mount	SOD-123	SOD-123	125°C