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Infineon Technologies |
DIODE SCHOTTKY 600V 6A D2PAK
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 6A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 80µA @ 600V
- Capacitance @ Vr, F: 280pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,376 |
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600V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 80µA @ 600V | 280pF @ 1V, 1MHz | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 175°C |
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GeneSiC Semiconductor |
DIODE GEN PURP REV 100V 12A DO4
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 800mV @ 12A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 200ns
- Current - Reverse Leakage @ Vr: 25µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-203AA, DO-4, Stud |
Stock3,296 |
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100V | 12A | 800mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 25µA @ 100V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 300V 5A DO215AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 10µA @ 300V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-215AB, SMC Gull Wing
- Supplier Device Package: DO-215AB
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: DO-215AB, SMC Gull Wing |
Stock2,272 |
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300V | 5A | 1.2V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 300V | - | Surface Mount | DO-215AB, SMC Gull Wing | DO-215AB | -55°C ~ 175°C |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 8A, 5
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 700mV @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-201AD, Axial |
Stock3,328 |
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50V | 8A | 700mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 3A, 9
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 90V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 90V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AA, SMB |
Stock7,552 |
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90V | 3A | 850mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GPP 2A 400V DO-214AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.5µs
- Current - Reverse Leakage @ Vr: 3µA @ 1000V
- Capacitance @ Vr, F: 11pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AC, SMA |
Stock6,736 |
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400V | 2A | 1.1V @ 2A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 3µA @ 1000V | 11pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, FAST, 0.5A, 50V, 150NS, S
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 5µA @ 50V
- Capacitance @ Vr, F: 4pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-219AB |
Stock5,968 |
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50V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 50V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 10A,
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 800mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 60V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-220-2 |
Stock3,456 |
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60V | 10A | 800mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Comchip Technology |
DIODE GEN PURP 1000V 3A DO214AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 1000V
- Capacitance @ Vr, F: 20pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB, (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AB, SMC |
Stock24,564 |
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1000V | 3A | 1.15V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1000V | 20pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 150°C |
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Fairchild/ON Semiconductor |
DIODE SCHOTTKY 40V 1A SMA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200µA @ 40V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: SMA (DO-214AC)
- Operating Temperature - Junction: -65°C ~ 125°C
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Package: DO-214AC, SMA |
Stock30,397,560 |
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40V | 1A | 500mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 40V | - | Surface Mount | DO-214AC, SMA | SMA (DO-214AC) | -65°C ~ 125°C |
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Microchip Technology |
DIODE GEN PURP 400V 22A DO4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 22A
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 400 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4 (DO-203AA)
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: - |
Request a Quote |
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400 V | 22A | 1.2 V @ 30 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 400 V | - | Stud Mount | DO-203AA, DO-4, Stud | DO-4 (DO-203AA) | -65°C ~ 200°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 4A DO214AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 4 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.5 µs
- Current - Reverse Leakage @ Vr: 10 µA @ 50 V
- Capacitance @ Vr, F: 60pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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50 V | 4A | 1.15 V @ 4 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 10 µA @ 50 V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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NTE Electronics, Inc |
DIODE GEN PURP 500V 6A DO4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 500 V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 19 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 12 mA @ 500 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Request a Quote |
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500 V | 6A | 1.1 V @ 19 A | Standard Recovery >500ns, > 200mA (Io) | - | 12 mA @ 500 V | - | Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 175°C |
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Taiwan Semiconductor Corporation |
20A, 100V, SCHOTTKY RECTIFIER
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 850 mV @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 100 V
- Capacitance @ Vr, F: 494pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: ThinDPAK
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock13,491 |
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100 V | 20A | 850 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10 µA @ 100 V | 494pF @ 4V, 1MHz | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | ThinDPAK | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
10A, 150V, TRENCH SCHOTTKY
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20 µA @ 150 V
- Capacitance @ Vr, F: 540pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252 (DPAK)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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150 V | 10A | 1.05 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20 µA @ 150 V | 540pF @ 4V, 1MHz | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK) | -55°C ~ 150°C |
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Panjit International Inc. |
DIODE SCHOTTKY 50V 6A TO220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 700 mV @ 6 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200 µA @ 50 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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50 V | 6A | 700 mV @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 50 V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Microchip Technology |
STANDARD RECTIFIER
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 500 V
- Current - Average Rectified (Io): 100A
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 500 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-205AA, DO-8, Stud
- Supplier Device Package: DO-205AA (DO-8)
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: - |
Request a Quote |
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500 V | 100A | 1.2 V @ 200 A | Standard Recovery >500ns, > 200mA (Io) | - | 50 µA @ 500 V | - | Stud Mount | DO-205AA, DO-8, Stud | DO-205AA (DO-8) | -65°C ~ 200°C |
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Micro Commercial Co |
DIODE GEN PURP 600V 1A DO214AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 200 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 600 V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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600 V | 1A | - | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 5 µA @ 600 V | 15pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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SemiQ |
DIODE SIL CARB 650V 12A TO220-2
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 30 µA @ 650 V
- Capacitance @ Vr, F: 572pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Request a Quote |
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650 V | 12A | 1.5 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 572pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
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Comchip Technology |
DIODE GEN PURP 800V 6A R-6
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 800 V
- Capacitance @ Vr, F: 100pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: R-6, Axial
- Supplier Device Package: R-6
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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800 V | 6A | 1.3 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 10 µA @ 800 V | 100pF @ 4V, 1MHz | Through Hole | R-6, Axial | R-6 | -55°C ~ 150°C |
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Microchip Technology |
DIODE GEN PURP 150V 2.5A A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 2.5A
- Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25 ns
- Current - Reverse Leakage @ Vr: 2 µA @ 150 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: Axial
- Supplier Device Package: A, Axial
- Operating Temperature - Junction: 175°C
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Package: - |
Request a Quote |
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150 V | 2.5A | 975 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 2 µA @ 150 V | - | Through Hole | Axial | A, Axial | 175°C |
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Infineon Technologies |
DIODE GEN PURP 600V 22.5A DIE
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 22.5A
- Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 22.5 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 27 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: - |
Request a Quote |
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600 V | 22.5A | 1.6 V @ 22.5 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 600 V | - | Surface Mount | Die | Die | -40°C ~ 175°C |
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onsemi |
DIODE GEN PURP 400V 6A TO277-3
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 45 ns
- Current - Reverse Leakage @ Vr: 2 µA @ 400 V
- Capacitance @ Vr, F: 60pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277-3
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock14,991 |
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400 V | 6A | - | Fast Recovery =< 500ns, > 200mA (Io) | 45 ns | 2 µA @ 400 V | 60pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277-3 | -55°C ~ 175°C |
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Comchip Technology |
DIODE SCHOTTKY 100V 2A SOD123F
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 830 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200 µA @ 100 V
- Capacitance @ Vr, F: 60pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: SOD-123F
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock7,860 |
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100 V | 2A | 830 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 100 V | 60pF @ 4V, 1MHz | Surface Mount | SOD-123F | SOD-123F | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 1.5A DO204AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 100 V
- Capacitance @ Vr, F: 35pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-204AC (DO-15)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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100 V | 1.5A | 1 V @ 1.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 100 V | 35pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 5A TO220AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 150 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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150 V | 5A | 880 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 150 V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Comchip Technology |
DIODE ULTRA FAST RECT 50V 1A DO2
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 50 V
- Capacitance @ Vr, F: 20pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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50 V | 1A | 1 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 50 V | 20pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE SCHOTTKY 50V 2A SMB TR 3K
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 50 V
- Capacitance @ Vr, F: 200pF @ 40V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: SMB
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Stock8,850 |
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50 V | 2A | 700 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 50 V | 200pF @ 40V, 1MHz | Surface Mount | DO-214AA, SMB | SMB | -65°C ~ 150°C |