Page 683 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

VS-20WT04FN
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock16,896
BAT30JFILM
STMicroelectronics

DIODE SCHOTTKY 30V 300MA SOD323

Package: SC-76, SOD-323

Stock37,080
VS-1N3767
Vishay Semiconductor Diodes Division

DIODE GEN PURP 900V 35A DO203AB

Package: DO-203AB, DO-5, Stud

Stock4,720
MBRB16H45HE3_A/P
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 16A TO263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,304
VS-MBRB735TRRPBF
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 7.5A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,880
EGL41CHE3/96
Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 1A DO213AB

Package: DO-213AB, MELF (Glass)

Stock5,200
UF1A B0G
TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 50V,

Package: DO-204AL, DO-41, Axial

Stock5,824
SS115LHMQG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 1

Package: DO-219AB

Stock5,136
FR305
SMC Diode Solutions

DIODE GEN PURP 600V 3A DO201AD

Package: -

Request a Quote
1N5807URS-TR
Microchip Technology

UFR,FRR

Package: -

Request a Quote
1N5060
Harris Corporation

DIODE GEN PURP 400V 3A SOD57

Package: -

Request a Quote
HS5K
Taiwan Semiconductor Corporation

DIODE GEN PURP 800V 5A DO214AB

Package: -

Stock9,000
ES5DC-HF
Comchip Technology

DIODE GEN PURP 200V 5A DO214AB

Package: -

Request a Quote
S1M-13-G
Diodes Incorporated

DIODE GENERAL PURPOSE SMA

Package: -

Request a Quote
UF5406GP-AP
Micro Commercial Co

DIODE GEN PURP 600V 3A DO201AD

Package: -

Request a Quote
SK115BH
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 150V 1A DO214AA

Package: -

Request a Quote
SIDC06D65C8X1SA1
Infineon Technologies

DIODE GEN PURP 650V 20A DIE

Package: -

Request a Quote
RL254M-AP
Micro Commercial Co

DIODE GEN PURP 400V 2.5A DO15

Package: -

Request a Quote
RS3J-V7G
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 3A DO214AB

Package: -

Stock4,203
MBR1545FA-BP
Micro Commercial Co

Interface

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
VS-20WT04FN	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 20A DPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 610mV @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 45V Capacitance @ Vr, F: 1900pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252, (D-Pak) Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock16,896	45V	20A	610mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 45V	1900pF @ 5V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252, (D-Pak)	-55°C ~ 175°C
BAT30JFILM	STMicroelectronics	DIODE SCHOTTKY 30V 300MA SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 300mA (DC) Voltage - Forward (Vf) (Max) @ If: 530mV @ 300mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 30V Capacitance @ Vr, F: 22pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: 150°C (Max)	Package: SC-76, SOD-323	Stock37,080	30V	300mA (DC)	530mV @ 300mA	Fast Recovery =< 500ns, > 200mA (Io)	-	5µA @ 30V	22pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	150°C (Max)
VS-1N3767	Vishay Semiconductor Diodes Division	DIODE GEN PURP 900V 35A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 900V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 110A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 900V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -65°C ~ 190°C	Package: DO-203AB, DO-5, Stud	Stock4,720	900V	35A	1.8V @ 110A	Standard Recovery >500ns, > 200mA (Io)	-	3mA @ 900V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-65°C ~ 190°C
MBRB16H45HE3_A/P	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 45V 16A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 660mV @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 45V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 175°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,304	45V	16A	660mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 45V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 175°C
VS-MBRB735TRRPBF	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 35V 7.5A D2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 7.5A Voltage - Forward (Vf) (Max) @ If: 840mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 35V Capacitance @ Vr, F: 400pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -65°C ~ 150°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,880	35V	7.5A	840mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 35V	400pF @ 5V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-65°C ~ 150°C
EGL41CHE3/96	Vishay Semiconductor Diodes Division	DIODE GEN PURP 150V 1A DO213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 150V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-213AB, MELF (Glass)	Stock5,200	150V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 150V	20pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
UF1A B0G	TSC America Inc.	DIODE, HIGH EFFICIENT, 1A, 50V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 17pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-204AL, DO-41, Axial	Stock5,824	50V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SS115LHMQG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 150V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-219AB	Stock5,136	150V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 150V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
FR305	SMC Diode Solutions	DIODE GEN PURP 600V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	600 V	3A	1.3 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	5 µA @ 600 V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 150°C
1N5807URS-TR	Microchip Technology	UFR,FRR Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: 60pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	50 V	3A	875 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	5 µA @ 50 V	60pF @ 10V, 1MHz	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C
1N5060	Harris Corporation	DIODE GEN PURP 400V 3A SOD57 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 40pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: SOD-57, Axial Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Request a Quote	400 V	3A	1.1 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	4 µs	5 µA @ 400 V	40pF @ 0V, 1MHz	Through Hole	SOD-57, Axial	SOD-57	-55°C ~ 175°C
HS5K	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 5A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 10 µA @ 800 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock9,000	800 V	5A	-	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	10 µA @ 800 V	50pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
ES5DC-HF	Comchip Technology	DIODE GEN PURP 200V 5A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	200 V	5A	1 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 200 V	50pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S1M-13-G	Diodes Incorporated	DIODE GENERAL PURPOSE SMA Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
UF5406GP-AP	Micro Commercial Co	DIODE GEN PURP 600V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	600 V	3A	1.7 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	10 µA @ 600 V	50pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SK115BH	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 1A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	150 V	1A	950 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 150 V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SIDC06D65C8X1SA1	Infineon Technologies	DIODE GEN PURP 650V 20A DIE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.87 V @ 20 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 240 nA @ 650 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C	Package: -	Request a Quote	650 V	20A	1.87 V @ 20 A	Standard Recovery >500ns, > 200mA (Io)	-	240 nA @ 650 V	-	Surface Mount	Die	Die	-40°C ~ 175°C
RL254M-AP	Micro Commercial Co	DIODE GEN PURP 400V 2.5A DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 2.5A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2.5 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 35pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	400 V	2.5A	1 V @ 2.5 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 400 V	35pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-55°C ~ 150°C
RS3J-V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock4,203	600 V	3A	1.3 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	10 µA @ 600 V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
MBR1545FA-BP	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 45 V Capacitance @ Vr, F: 635pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Isolated Tab Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	45 V	15A	600 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 45 V	635pF @ 4V, 1MHz	Through Hole	TO-220-2 Isolated Tab	ITO-220AC	-55°C ~ 150°C
JAN1N5622US-TR	Microchip Technology	DIODE GEN PURP 1KV 1A D-5A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Current - Reverse Leakage @ Vr: 500 nA @ 1 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 200°C	Package: -	Request a Quote	1000 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 1 V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 200°C
ES2JFSH	Taiwan Semiconductor Corporation	35NS, 2A, 600V, SUPER FAST RECOV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: 21pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock42,000	600 V	2A	1.7 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	1 µA @ 600 V	21pF @ 4V, 1MHz	Surface Mount	SOD-128	SOD-128	-55°C ~ 150°C
HT14GH	Taiwan Semiconductor Corporation	50NS, 1A, 300V, HIGH EFFICIENT R Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 300 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock15,000	300 V	1A	1 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 300 V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
VS-45EPS12LHM3	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 1.2KV 45A TO247AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 45A Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 45 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AD Operating Temperature - Junction: -40°C ~ 150°C	Package: -	Stock390	1200 V	45A	1.14 V @ 45 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1200 V	-	Through Hole	TO-247-2	TO-247AD	-40°C ~ 150°C
RB088LAM-60TR	Rohm Semiconductor	DIODE SCHOTTKY 60V 5A PMDTM Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 710 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: PMDTM Operating Temperature - Junction: 150°C	Package: -	Stock21,816	60 V	5A	710 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	4 µA @ 60 V	-	Surface Mount	SOD-128	PMDTM	150°C
PMEG3002AELD-QYL	Nexperia USA Inc.	PMEG3002AELD-Q/SOD882D/XSON2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 480 mV @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Current - Reverse Leakage @ Vr: 10 µA @ 10 V Capacitance @ Vr, F: 18pF @ 1V, 1MHz Mounting Type: Surface Mount, Wettable Flank Package / Case: 2-XDFN Supplier Device Package: DFN1006D-2 Operating Temperature - Junction: 150°C	Package: -	Request a Quote	30 V	200mA	480 mV @ 200 mA	Small Signal =< 200mA (Io), Any Speed	6 ns	10 µA @ 10 V	18pF @ 1V, 1MHz	Surface Mount, Wettable Flank	2-XDFN	DFN1006D-2	150°C
BAS316HE3-TP	Micro Commercial Co	DIODE GEN PURP 100V 250MA SOD323 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 1 µA @ 75 V Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Stock8,952	100 V	250mA	1.25 V @ 150 mA	Fast Recovery =< 500ns, > 200mA (Io)	4 ns	1 µA @ 75 V	1.5pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-65°C ~ 150°C
DSK110	MDD	DIODE SCHOTTKY 100V 1A SOD123FL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 100 V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 125°C	Package: -	Request a Quote	100 V	1A	850 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 100 V	80pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-55°C ~ 125°C