Page 689 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

STPS3L60UY
STMicroelectronics

DIODE SCHOTTKY 60V 3A SMB

Package: DO-214AA, SMB

Stock30,000
BYT52A-TAP
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 50V 1.4A SOD57

Package: SOD-57, Axial

Stock5,056
RS2D-E3/5BT
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1.5A DO214AA

Package: DO-214AA, SMB

Stock4,464
ESH1PCHM3/85A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 1A DO220AA

Package: DO-220AA

Stock7,856
SS26-M3/5BT
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 2A 60V DO-214AA

Package: DO-214AA, SMB

Stock3,584
UF1A R0G
TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 50V,

Package: DO-204AL, DO-41, Axial

Stock2,848
BAT54SWF
Nexperia USA Inc.

BAT54SW/SOT323/SC-70

Package: -

Stock2,304
SDT8A100P5-7
Diodes Incorporated

SCHOTTKY RECTIFIER PDI5

Package: TO-277, 3-PowerDFN

Stock3,760
MMSD914-TP
Micro Commercial Co

DIODE GEN PURP 75V 200MA SOD123

Package: SOD-123

Stock28,866
RS1BB-13-F
Diodes Incorporated

DIODE GEN PURP 100V 1A SMB

Package: DO-214AA, SMB

Stock551,880
SS110-TP
Micro Commercial Co

DIODE SCHOTTKY 100V 1A SMA

Package: DO-214AC, SMA

Stock1,188,504
1N2232
Microchip Technology

DIODE GEN PURP 300V 5A DO4

Package: -

Request a Quote
SRAF10100
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 100V 10A ITO220AC

Package: -

Request a Quote
NTE5809
NTE Electronics, Inc

DIODE GEN PURP 1KV 3A DO27

Package: -

Request a Quote
SF12-AP
Micro Commercial Co

DIODE GEN PURP 100V 1A DO41

Package: -

Request a Quote
PMEG2005EGW-QJ
Nexperia USA Inc.

DIODE SCHOTTKY 20V 500MA SOD123

Package: -

Request a Quote
GP3D060A120B
SemiQ

DIODE SCHOTTKY 1200V 60A TO247

Package: -

Request a Quote
PMEG6030CERX
Nexperia USA Inc.

BIPOLAR DISCRETES

Package: -

Stock9,000
CMR1U-02FL-TR13-PBFREE
Central Semiconductor Corp

DIODE GEN PURP 200V 1A SMB

Package: -

Stock14,694
SDUR60F60W
SMC Diode Solutions

60A,600V,TO-247AC, ULTRAFAST REC

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
STPS3L60UY	STMicroelectronics	DIODE SCHOTTKY 60V 3A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 620mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -40°C ~ 150°C	Package: DO-214AA, SMB	Stock30,000	60V	3A	620mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 60V	-	Surface Mount	DO-214AA, SMB	SMB	-40°C ~ 150°C
BYT52A-TAP	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 50V 1.4A SOD57 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1.4A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: SOD-57, Axial Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C	Package: SOD-57, Axial	Stock5,056	50V	1.4A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 50V	-	Through Hole	SOD-57, Axial	SOD-57	-55°C ~ 175°C
RS2D-E3/5BT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1.5A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AA, SMB	Stock4,464	200V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	20pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ESH1PCHM3/85A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 150V 1A DO220AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 1µA @ 150V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-220AA	Stock7,856	150V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 150V	25pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 175°C
SS26-M3/5BT	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 2A 60V DO-214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-214AA, SMB	Stock3,584	60V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 60V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-65°C ~ 150°C
UF1A R0G	TSC America Inc.	DIODE, HIGH EFFICIENT, 1A, 50V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 17pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-204AL, DO-41, Axial	Stock2,848	50V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
BAT54SWF	Nexperia USA Inc.	BAT54SW/SOT323/SC-70 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Stock2,304	-	-	-	-	-	-	-	-	-	-	-
SDT8A100P5-7	Diodes Incorporated	SCHOTTKY RECTIFIER PDI5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 700mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: PowerDI? 5 Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-277, 3-PowerDFN	Stock3,760	100V	8A	700mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	TO-277, 3-PowerDFN	PowerDI? 5	-55°C ~ 150°C
MMSD914-TP	Micro Commercial Co	DIODE GEN PURP 75V 200MA SOD123 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 5µA @ 75V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C	Package: SOD-123	Stock28,866	75V	200mA	1V @ 10mA	Small Signal =< 200mA (Io), Any Speed	4ns	5µA @ 75V	4pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-55°C ~ 150°C
RS1BB-13-F	Diodes Incorporated	DIODE GEN PURP 100V 1A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-214AA, SMB	Stock551,880	100V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	15pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 150°C
SS110-TP	Micro Commercial Co	DIODE SCHOTTKY 100V 1A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 850mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 100V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 125°C	Package: DO-214AC, SMA	Stock1,188,504	100V	1A	850mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 100V	30pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-55°C ~ 125°C
1N2232	Microchip Technology	DIODE GEN PURP 300V 5A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 300 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 (DO-203AA) Operating Temperature - Junction: -65°C ~ 200°C	Package: -	Request a Quote	300 V	5A	1.3 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 300 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4 (DO-203AA)	-65°C ~ 200°C
SRAF10100	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 10A ITO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	100 V	10A	850 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 100 V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
NTE5809	NTE Electronics, Inc	DIODE GEN PURP 1KV 3A DO27 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9.4 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 1000 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-27 Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	1000 V	3A	1.2 V @ 9.4 A	Standard Recovery >500ns, > 200mA (Io)	-	500 µA @ 1000 V	-	Through Hole	DO-201AA, DO-27, Axial	DO-27	-65°C ~ 175°C
SF12-AP	Micro Commercial Co	DIODE GEN PURP 100V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 125°C	Package: -	Request a Quote	100 V	1A	950 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 100 V	40pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 125°C
PMEG2005EGW-QJ	Nexperia USA Inc.	DIODE SCHOTTKY 20V 500MA SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 390 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 20 V Capacitance @ Vr, F: 66pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: 150°C	Package: -	Request a Quote	20 V	500mA	390 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 20 V	66pF @ 1V, 1MHz	Surface Mount	SOD-123	SOD-123	150°C
GP3D060A120B	SemiQ	DIODE SCHOTTKY 1200V 60A TO247 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
PMEG6030CERX	Nexperia USA Inc.	BIPOLAR DISCRETES Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 760 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6 ns Current - Reverse Leakage @ Vr: 60 µA @ 60 V Capacitance @ Vr, F: 100pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: 175°C	Package: -	Stock9,000	60 V	3A	760 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	6 ns	60 µA @ 60 V	100pF @ 1V, 1MHz	Surface Mount	SOD-123W	SOD-123W	175°C
CMR1U-02FL-TR13-PBFREE	Central Semiconductor Corp	DIODE GEN PURP 200V 1A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: 18pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock14,694	200 V	1A	1 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	1 µA @ 200 V	18pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-55°C ~ 150°C
SDUR60F60W	SMC Diode Solutions	60A,600V,TO-247AC, ULTRAFAST REC Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
PNE200100EPE-QZ	Nexperia USA Inc.	DIODE GEN PURP 200V 10A CFP15B Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 960 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: 99pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: CFP15B Operating Temperature - Junction: 175°C	Package: -	Request a Quote	200 V	10A	960 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	1 µA @ 200 V	99pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	CFP15B	175°C
IDW100E60FKSA1	Infineon Technologies	DIODE GP 600V 150A TO247-3-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 2 V @ 100 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 120 ns Current - Reverse Leakage @ Vr: 40 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-1 Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock1,479	600 V	150A	2 V @ 100 A	Fast Recovery =< 500ns, > 200mA (Io)	120 ns	40 µA @ 600 V	-	Through Hole	TO-247-3	PG-TO247-3-1	-55°C ~ 175°C
UF5405GP-AP	Micro Commercial Co	DIODE GEN PURP 500V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 10 µA @ 500 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	500 V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	10 µA @ 500 V	50pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
20F40	Solid State Inc.	DIODE GEN PURP 400V 20A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	400 V	20A	1.2 V @ 20 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 400 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 150°C
SS5P9HM3_A-H	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 90V 5A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 15 µA @ 90 V Capacitance @ Vr, F: 130pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock4,140	90 V	5A	880 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	15 µA @ 90 V	130pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C
PPH810-AQ	Diotec Semiconductor	IC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 730 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277B Operating Temperature - Junction: -50°C ~ 175°C	Package: -	Request a Quote	100 V	8A	730 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 100 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277B	-50°C ~ 175°C
1N4936-BK-PBFREE	Central Semiconductor Corp	DIODE GEN PURP 400V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -	Package: -	Request a Quote	400 V	1A	1.2 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	5 µA @ 400 V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-
PG102R_R2_00001	Panjit International Inc.	DIODE GEN PURP 200V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	200 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 200 V	12pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C