Page 70 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

IDV05S60CXKSA1
Infineon Technologies

DIODE SCHOTTKY 600V 5A TO220-2FP

Package: TO-220-2 Full Pack

Stock7,808
SK33BE3/TR13
Microsemi Corporation

DIODE SCHOTTKY 30V 3A SMB

Package: DO-214AA, SMB

Stock7,328
VS-SD1100C20C
Vishay Semiconductor Diodes Division

DIODE MODULE 2KV 1400A B-43

Package: B-43, PUK

Stock4,704
JANTXV1N5807
Microsemi Corporation

DIODE GEN PURP 50V 3A AXIAL

Package: B, Axial

Stock5,536
FESB16BTHE3/81
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 16A TO263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,672
VS-ETX1506S-M3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 15A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,216
FESB8BTHE3/45
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 8A TO263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,120
S3M-E3/9AT
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 3A DO214AB

Package: DO-214AB, SMC

Stock54,108
CFRMT105-HF
Comchip Technology

DIODE GEN PURP 600V 1A SOD123H

Package: SOD-123H

Stock2,528
S2A-M3/5BT
Vishay Semiconductor Diodes Division

DIODE GPP 1.5A 50V DO-214AA

Package: DO-214AA, SMB

Stock7,408
SS26L M2G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 6

Package: DO-219AB

Stock2,432
1N6625US
Microsemi Corporation

DIODE GEN PURP 1.1KV 1A A-MELF

Package: SQ-MELF, A

Stock5,456
CMSH3-20M TR13
Central Semiconductor Corp

DIODE SCHOTTKY 20V 3A SMB

Package: DO-214AA, SMB

Stock5,408
2A06G-T
Diodes Incorporated

DIODE GEN PURP 800V 2A DO15

Package: DO-204AC, DO-15, Axial

Stock4,112
C4D15120A
Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 10A TO220-2

Package: TO-220-2

Stock6,324
S1Y
SMC Diode Solutions

2000V,1A, SMA, STANDARD RECTIFIE

Package: -

Stock212,082
RL251M-AP
Micro Commercial Co

DIODE GEN PURP 50V 2.5A DO15

Package: -

Request a Quote
CSB-1136
Microchip Technology

SMALL-SIGNAL SCHOTTKY

Package: -

Request a Quote
PMEG100T50ELPX
Nexperia USA Inc.

DIODE SCHOTT 100V 5A SOD128/CFP5

Package: -

Stock18,000
SS0530_R1_00001
Panjit International Inc.

DIODE SCHOTTKY 30V 500MA SOD123

Package: -

Stock273,900

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
IDV05S60CXKSA1	Infineon Technologies	DIODE SCHOTTKY 600V 5A TO220-2FP Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 5A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 5A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 70µA @ 600V Capacitance @ Vr, F: 240pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: PG-TO220-2 Full Pack Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-220-2 Full Pack	Stock7,808	600V	5A (DC)	1.7V @ 5A	No Recovery Time > 500mA (Io)	0ns	70µA @ 600V	240pF @ 1V, 1MHz	Through Hole	TO-220-2 Full Pack	PG-TO220-2 Full Pack	-55°C ~ 175°C
SK33BE3/TR13	Microsemi Corporation	DIODE SCHOTTKY 30V 3A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB (DO-214AA) Operating Temperature - Junction: -55°C ~ 125°C	Package: DO-214AA, SMB	Stock7,328	30V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Surface Mount	DO-214AA, SMB	SMB (DO-214AA)	-55°C ~ 125°C
VS-SD1100C20C	Vishay Semiconductor Diodes Division	DIODE MODULE 2KV 1400A B-43 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2000V Current - Average Rectified (Io): 1400A Voltage - Forward (Vf) (Max) @ If: 1.31V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 35mA @ 2000V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: B-43, PUK Supplier Device Package: B-43, Hockey PUK Operating Temperature - Junction: -	Package: B-43, PUK	Stock4,704	2000V	1400A	1.31V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	-	35mA @ 2000V	-	Stud Mount	B-43, PUK	B-43, Hockey PUK	-
JANTXV1N5807	Microsemi Corporation	DIODE GEN PURP 50V 3A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 65pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	Package: B, Axial	Stock5,536	50V	3A	875mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 50V	65pF @ 10V, 1MHz	Through Hole	B, Axial	-	-65°C ~ 175°C
FESB16BTHE3/81	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 16A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 975mV @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: 175pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 150°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,672	100V	16A	975mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	175pF @ 4V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 150°C
VS-ETX1506S-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 15A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 3.4V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 36µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -65°C ~ 175°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,216	600V	15A	3.4V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	36µA @ 600V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-65°C ~ 175°C
FESB8BTHE3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 8A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 950mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,120	100V	8A	950mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-55°C ~ 150°C
S3M-E3/9AT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5µs Current - Reverse Leakage @ Vr: 10µA @ 1000V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AB, SMC	Stock54,108	1000V	3A	1.15V @ 2.5A	Standard Recovery >500ns, > 200mA (Io)	2.5µs	10µA @ 1000V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
CFRMT105-HF	Comchip Technology	DIODE GEN PURP 600V 1A SOD123H Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A (DC) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123H Operating Temperature - Junction: -55°C ~ 150°C	Package: SOD-123H	Stock2,528	600V	1A (DC)	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 600V	15pF @ 4V, 1MHz	Surface Mount	SOD-123H	SOD-123H	-55°C ~ 150°C
S2A-M3/5BT	Vishay Semiconductor Diodes Division	DIODE GPP 1.5A 50V DO-214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 1µA @ 50V Capacitance @ Vr, F: 16pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AA, SMB	Stock7,408	50V	1.5A	1.15V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 50V	16pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SS26L M2G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 2A, 6 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-219AB	Stock2,432	60V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
1N6625US	Microsemi Corporation	DIODE GEN PURP 1.1KV 1A A-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.75V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 1µA @ 1100V Capacitance @ Vr, F: 10pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: A-MELF Operating Temperature - Junction: -65°C ~ 150°C	Package: SQ-MELF, A	Stock5,456	1100V	1A	1.75V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	1µA @ 1100V	10pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	A-MELF	-65°C ~ 150°C
CMSH3-20M TR13	Central Semiconductor Corp	DIODE SCHOTTKY 20V 3A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 550mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 20V Capacitance @ Vr, F: 280pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-214AA, SMB	Stock5,408	20V	3A	550mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	280pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 150°C
2A06G-T	Diodes Incorporated	DIODE GEN PURP 800V 2A DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AC, DO-15, Axial	Stock4,112	800V	2A	1.1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	40pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-65°C ~ 175°C
C4D15120A	Cree/Wolfspeed	DIODE SCHOTTKY 1.2KV 10A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 15A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 1200V Capacitance @ Vr, F: 1200pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-220-2	Stock6,324	1200V	10A (DC)	1.8V @ 15A	No Recovery Time > 500mA (Io)	0ns	200µA @ 1200V	1200pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
S1Y	SMC Diode Solutions	2000V,1A, SMA, STANDARD RECTIFIE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 2000 V Capacitance @ Vr, F: 14pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock212,082	2000 V	1A	1.2 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 2000 V	14pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	-55°C ~ 150°C
RL251M-AP	Micro Commercial Co	DIODE GEN PURP 50V 2.5A DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 2.5A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2.5 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: 35pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	50 V	2.5A	1 V @ 2.5 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 50 V	35pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-55°C ~ 150°C
CSB-1136	Microchip Technology	SMALL-SIGNAL SCHOTTKY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
PMEG100T50ELPX	Nexperia USA Inc.	DIODE SCHOTT 100V 5A SOD128/CFP5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 895 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 12.5 ns Current - Reverse Leakage @ Vr: 1.75 µA @ 100 V Capacitance @ Vr, F: 300pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: SOD-128/CFP5 Operating Temperature - Junction: 175°C	Package: -	Stock18,000	100 V	5A	895 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	12.5 ns	1.75 µA @ 100 V	300pF @ 1V, 1MHz	Surface Mount	SOD-128	SOD-128/CFP5	175°C
SS0530_R1_00001	Panjit International Inc.	DIODE SCHOTTKY 30V 500MA SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 µA @ 15 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 125°C	Package: -	Stock273,900	30 V	500mA	430 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	20 µA @ 15 V	-	Surface Mount	SOD-123	SOD-123	-55°C ~ 125°C
MSASC75W45F	Microchip Technology	DIODE SCHOTTKY 45V 75A THINKEY4 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 75A Voltage - Forward (Vf) (Max) @ If: 760 mV @ 75 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 750 µA @ 45 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: ThinKey™4 Supplier Device Package: ThinKey™4 Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	45 V	75A	760 mV @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	-	750 µA @ 45 V	-	Surface Mount	ThinKey™4	ThinKey™4	-65°C ~ 175°C
STR20100YD_L2_00001	Panjit International Inc.	100V ,SCHOTTKY,TO-252AA,20A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 810 mV @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 100 V Capacitance @ Vr, F: 820pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock17,979	100 V	20A	810 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 100 V	820pF @ 4V, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252AA	-55°C ~ 150°C
PMEG60T20ELRX	Nexperia USA Inc.	DIODE SCHOTTKY 60V 2A SOD123W Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 620 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 12 ns Current - Reverse Leakage @ Vr: 1.2 µA @ 60 V Capacitance @ Vr, F: 370pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: 175°C (Max)	Package: -	Stock98,952	60 V	2A	620 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	12 ns	1.2 µA @ 60 V	370pF @ 1V, 1MHz	Surface Mount	SOD-123W	SOD-123W	175°C (Max)
V15PM6-M3-H	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 60V 15A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.2 mA @ 60 V Capacitance @ Vr, F: 2300pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 175°C	Package: -	Stock12,639	60 V	15A	640 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.2 mA @ 60 V	2300pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 175°C
MMBD4148-TP-HF	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75 V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 855 mV @ 10 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 25 nA @ 20 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	75 V	150mA	855 mV @ 10 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	25 nA @ 20 V	2pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	-55°C ~ 150°C
HER154GH	Taiwan Semiconductor Corporation	50NS, 1.5A, 300V, HIGH EFFICIENT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 300 V Capacitance @ Vr, F: 35pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock10,500	300 V	1.5A	1 V @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 300 V	35pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
ES15DLW-RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1.5A SOD123W Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: 24pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	200 V	1.5A	950 mV @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	1 µA @ 200 V	24pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD-123W	-55°C ~ 150°C
RFUH10TF6SFHC9	Rohm Semiconductor	DIODE GEN PURP 600V 10A TO220NFM Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220NFM Operating Temperature - Junction: 150°C (Max)	Package: -	Stock1,278	600 V	10A	2.8 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	10 µA @ 600 V	-	Through Hole	TO-220-2 Full Pack	TO-220NFM	150°C (Max)