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Rohm Semiconductor |
DIODE GEN PURPOSE CPD
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock3,456 |
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- | - | - | - | - | - | - | - | - | - | - |
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Microsemi Corporation |
DIODE SCHOTTKY 50V 1A DO213AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 50V
- Capacitance @ Vr, F: 0.9pF @ 5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AB, MELF
- Supplier Device Package: DO-213AB
- Operating Temperature - Junction: -
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Package: DO-213AB, MELF |
Stock4,560 |
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50V | 1A | 600mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 50V | 0.9pF @ 5V, 1MHz | Surface Mount | DO-213AB, MELF | DO-213AB | - |
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Micro Commercial Co |
DIODE SCHOTTKY 20V 500MA SOT23
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 500mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 30µA @ 10V
- Capacitance @ Vr, F: 20pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
- Operating Temperature - Junction: 125°C (Max)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock6,816 |
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20V | 500mA | 500mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 30µA @ 10V | 20pF @ 10V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 125°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 3A SMC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 580mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 60V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: SMC
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AB, SMC |
Stock78,600 |
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60V | 3A | 580mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Surface Mount | DO-214AB, SMC | SMC | -55°C ~ 150°C |
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Vishay Semiconductor Opto Division |
DIODE GEN PURP 800V 12A DO203AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1.26V @ 38A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-203AA
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-203AA, DO-4, Stud |
Stock7,344 |
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800V | 12A | 1.26V @ 38A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 16A TO263AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300V
- Current - Average Rectified (Io): 16A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 16A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 10µA @ 300V
- Capacitance @ Vr, F: 175pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,944 |
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300V | 16A | 1.3V @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 300V | 175pF @ 4V, 1MHz | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB | -65°C ~ 150°C |
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TSC America Inc. |
DIODE, ULTRA FAST, 8A, 600V, 30N
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 2.3V @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 500nA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-220-2 Full Pack |
Stock3,232 |
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600V | 8A | 2.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 600V | - | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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Sanken |
DIODE GEN PURP 200V 1A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 400ns
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: Axial
- Supplier Device Package: -
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: Axial |
Stock3,776 |
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200V | 1A | 1.4V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 200V | - | Through Hole | Axial | - | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO204AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 500nA @ 200V
- Capacitance @ Vr, F: 25pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-204AC (DO-15)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AC, DO-15, Axial |
Stock7,664 |
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200V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 200V | 25pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 175°C |
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TSC America Inc. |
DIODE, ULTRA FAST, 3A, 200V, 25N
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 875mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25ns
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB, (SMC)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: DO-214AB, SMC |
Stock3,360 |
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200V | 3A | 875mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 200V | - | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 20V 500MA SOD523
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 500mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 480mV @ 500mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 12ns
- Current - Reverse Leakage @ Vr: 75µA @ 20V
- Capacitance @ Vr, F: 35pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: SOD-523
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: SC-79, SOD-523 |
Stock3,232 |
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20V | 500mA (DC) | 480mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 12ns | 75µA @ 20V | 35pF @ 1V, 1MHz | Surface Mount | SC-79, SOD-523 | SOD-523 | -55°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 150MA SOD123
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 150mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1V @ 250mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 75V
- Capacitance @ Vr, F: 6pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
- Operating Temperature - Junction: 125°C (Max)
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Package: SOD-123 |
Stock3,296 |
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100V | 150mA (DC) | 1V @ 250mA | Small Signal =< 200mA (Io), Any Speed | - | 5µA @ 75V | 6pF @ 1V, 1MHz | Surface Mount | SOD-123 | SOD-123 | 125°C (Max) |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 3A, 1
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 150V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-123W
- Supplier Device Package: SOD123W
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: SOD-123W |
Stock6,272 |
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150V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 150V | - | Surface Mount | SOD-123W | SOD123W | -55°C ~ 150°C |
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Rohm Semiconductor |
DIODE GEN PURP 250V 100MA UMD2
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 250V
- Current - Average Rectified (Io): 100mA
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 250V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SC-90, SOD-323F
- Supplier Device Package: UMD2
- Operating Temperature - Junction: 150°C (Max)
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Package: SC-90, SOD-323F |
Stock2,656 |
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250V | 100mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 250V | - | Surface Mount | SC-90, SOD-323F | UMD2 | 150°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO213AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: 20pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AB, MELF (Glass)
- Supplier Device Package: DO-213AB
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-213AB, MELF (Glass) |
Stock5,568 |
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200V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | 20pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
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Central Semiconductor Corp |
DIODE GEN PURP 250V 200MA SOD323
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 250V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 100nA @ 240V
- Capacitance @ Vr, F: 5pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: SOD-323
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: SC-76, SOD-323 |
Stock2,864 |
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250V | 200mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 50ns | 100nA @ 240V | 5pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO214BA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2µs
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214BA
- Supplier Device Package: DO-214BA (GF1)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-214BA |
Stock402,000 |
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200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 200V | - | Surface Mount | DO-214BA | DO-214BA (GF1) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A MICROSMP
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 780ns
- Current - Reverse Leakage @ Vr: 1µA @ 600V
- Capacitance @ Vr, F: 5pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: MicroSMP
- Supplier Device Package: MicroSMP
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: MicroSMP |
Stock1,525,200 |
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600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 780ns | 1µA @ 600V | 5pF @ 4V, 1MHz | Surface Mount | MicroSMP | MicroSMP | -55°C ~ 175°C |
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Solid State Inc. |
DIODE GEN PURP 250V 150A DO8
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 250 V
- Current - Average Rectified (Io): 150A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 250 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-205AA, DO-8, Stud
- Supplier Device Package: DO-8
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: - |
Request a Quote |
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250 V | 150A | 1.1 V @ 200 A | Standard Recovery >500ns, > 200mA (Io) | - | 50 µA @ 250 V | - | Stud Mount | DO-205AA, DO-8, Stud | DO-8 | -65°C ~ 200°C |
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Microchip Technology |
STD RECTIFIER
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Motorola |
RECTIFIER DIODE, SCHOTTKY
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 90 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 600 µA @ 90 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: Axial
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Request a Quote |
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90 V | 3A | 790 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 600 µA @ 90 V | - | Through Hole | DO-201AD, Axial | Axial | -65°C ~ 150°C |
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Micro Commercial Co |
Interface
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 100 V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: SOD-123FL
- Operating Temperature - Junction: -50°C ~ 150°C
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Package: - |
Request a Quote |
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100 V | 1A | 950 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 100 V | 10pF @ 4V, 1MHz | Surface Mount | SOD-123F | SOD-123FL | -50°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 6.8KV 3910A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 6800 V
- Current - Average Rectified (Io): 3910A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4000 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 mA @ 6800 V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: DO-200AE
- Supplier Device Package: -
- Operating Temperature - Junction: -40°C ~ 160°C
|
Package: - |
Request a Quote |
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6800 V | 3910A | 1.7 V @ 4000 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 mA @ 6800 V | - | Chassis Mount | DO-200AE | - | -40°C ~ 160°C |
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Infineon Technologies |
DIODE SIL CARB 600V 10A TO252-3
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 90 µA @ 600 V
- Capacitance @ Vr, F: 290pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock1,089 |
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600 V | 10A | 2.1 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 90 µA @ 600 V | 290pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | PG-TO252-3 | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 10A ITO220AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 80 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 800 V
- Capacitance @ Vr, F: 40pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack, Isolated Tab
- Supplier Device Package: ITO-220AB
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Stock3,000 |
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800 V | 10A | 1.7 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 80 ns | 10 µA @ 800 V | 40pF @ 4V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
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STMicroelectronics |
DIODE GEN PURP 600V 30A D2PAK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 2.95 V @ 30 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 55 ns
- Current - Reverse Leakage @ Vr: 40 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
- Operating Temperature - Junction: 175°C (Max)
|
Package: - |
Stock6,915 |
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600 V | 30A | 2.95 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 55 ns | 40 µA @ 600 V | - | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | D2PAK | 175°C (Max) |
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Solid State Inc. |
DIODE GEN PURP REV 100V 40A DO5
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 40A
- Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -65°C ~ 200°C
|
Package: - |
Request a Quote |
|
100 V | 40A | 1.19 V @ 90 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 200°C |
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onsemi |
DIODE SCHOTTKY 40V 1A SMA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 40 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: SMA
- Operating Temperature - Junction: -
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40 V | 1A | 550 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 40 V | - | Surface Mount | DO-214AC, SMA | SMA | - |