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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 1A DO204AL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 5µA @ 300V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-204AL, DO-41, Axial |
Stock6,592 |
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300V | 1A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 300V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3A DO214AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 40ns
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB, (SMC)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: DO-214AB, SMC |
Stock7,616 |
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200V | 3A | 900mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 5µA @ 200V | - | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 2A GP20
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 5µs
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AA, DO-27, Axial
- Supplier Device Package: GP20
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-201AA, DO-27, Axial |
Stock7,632 |
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600V | 2A | 1.1V @ 2A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 5µA @ 600V | - | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 150°C |
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Powerex Inc. |
DIODE MODULE 800V 600A DO200AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 600A
- Voltage - Forward (Vf) (Max) @ If: 2.15V @ 1500A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 7µs
- Current - Reverse Leakage @ Vr: 50mA @ 800V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: DO-200AB, B-PUK
- Supplier Device Package: DO-200AB, B-PUK
- Operating Temperature - Junction: -
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Package: DO-200AB, B-PUK |
Stock6,256 |
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800V | 600A | 2.15V @ 1500A | Standard Recovery >500ns, > 200mA (Io) | 7µs | 50mA @ 800V | - | Chassis Mount | DO-200AB, B-PUK | DO-200AB, B-PUK | - |
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GeneSiC Semiconductor |
DIODE GEN PURP 800V 12A DO4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-203AA, DO-4, Stud |
Stock6,944 |
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800V | 12A | 1.1V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 175°C |
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WeEn Semiconductors |
NXPSC10650DJ DPAK Q1 T1
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock6,000 |
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- | - | - | - | - | - | - | - | - | - | - |
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TSC America Inc. |
DIODE, SCHOTTKY, TRENCH, 20A, 12
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 120V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 860mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 150µA @ 120V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack, Isolated Tab
- Supplier Device Package: ITO-220AB
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-220-3 Full Pack, Isolated Tab |
Stock2,048 |
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120V | 10A | 860mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 120V | - | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 8A, 5
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 700mV @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-220-2 |
Stock5,840 |
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50V | 8A | 700mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Sanken |
DIODE SCHOTTKY 60V 2A AXIAL
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 620mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2mA @ 60V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: Axial
- Supplier Device Package: -
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: Axial |
Stock4,672 |
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60V | 2A | 620mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 60V | - | Through Hole | Axial | - | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3µs
- Current - Reverse Leakage @ Vr: 5µA @ 400V
- Capacitance @ Vr, F: 40pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-201AD, Axial |
Stock6,624 |
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400V | 3A | 1.1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 5µA @ 400V | 40pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Comchip Technology |
DIODE SCHOTTKY 40V 2A DO214AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 2A (DC)
- Voltage - Forward (Vf) (Max) @ If: 450mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 40V
- Capacitance @ Vr, F: 30pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -50°C ~ 150°C
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Package: DO-214AC, SMA |
Stock4,064 |
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40V | 2A (DC) | 450mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -50°C ~ 150°C |
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SMC Diode Solutions |
DIODE SCHOTTKY 50V 2A DO15
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 2A
- Capacitance @ Vr, F: 140pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-15
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-204AC, DO-15, Axial |
Stock7,232 |
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50V | 2A | 700mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 2A | 140pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-15 | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 2A DO221AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 2A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.2µs
- Current - Reverse Leakage @ Vr: 5µA @ 400V
- Capacitance @ Vr, F: 12pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-221AC, SMA Flat Leads
- Supplier Device Package: DO-221AC (SlimSMA)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: DO-221AC, SMA Flat Leads |
Stock60,480 |
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400V | 2A (DC) | 1.1V @ 2A | Standard Recovery >500ns, > 200mA (Io) | 1.2µs | 5µA @ 400V | 12pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | DO-221AC (SlimSMA) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO214BA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214BA
- Supplier Device Package: DO-214BA (GF1)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-214BA |
Stock99,612 |
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200V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | 8.5pF @ 4V, 1MHz | Surface Mount | DO-214BA | DO-214BA (GF1) | -65°C ~ 175°C |
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Solid State Inc. |
DIODE GEN PURP 500V 40A DO5
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 500 V
- Current - Average Rectified (Io): 40A
- Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 500 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: - |
Request a Quote |
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500 V | 40A | 1.19 V @ 90 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 500 V | - | Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 200°C |
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Microchip Technology |
DIODE GEN PURP 800V 1A SMBG
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 60 ns
- Current - Reverse Leakage @ Vr: 20 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-215AA, SMB Gull Wing
- Supplier Device Package: SMBG (DO-215AA)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Request a Quote |
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800 V | 1A | 1.2 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 20 µA @ 600 V | - | Surface Mount | DO-215AA, SMB Gull Wing | SMBG (DO-215AA) | -55°C ~ 175°C |
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Infineon Technologies |
LED PX8143HDMG008XTMA1
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Good-Ark Semiconductor |
RECTIFIER, SCHOTTKY, 5A, 100V, D
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 790 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 30 µA @ 100 V
- Capacitance @ Vr, F: 96pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock17,700 |
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100 V | 5A | 790 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 30 µA @ 100 V | 96pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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onsemi |
DIODE SCHOTTKY 100V 2A SMA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 8 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: SMA
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: - |
Request a Quote |
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100 V | 2A | 790 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 8 µA @ 100 V | - | Surface Mount | DO-214AC, SMA | SMA | -65°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 8A ITO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 65 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock2,991 |
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600 V | 8A | 1.3 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 65 ns | 5 µA @ 600 V | - | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 175°C |
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Panjit International Inc. |
DIODE GEN PURP 75V 200MA SOD323
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 75 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 3 µs
- Current - Reverse Leakage @ Vr: 5 nA @ 75 V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-90, SOD-323F
- Supplier Device Package: SOD-323
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock67,791 |
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75 V | 200mA | 1.25 V @ 150 mA | Small Signal =< 200mA (Io), Any Speed | 3 µs | 5 nA @ 75 V | 2pF @ 0V, 1MHz | Surface Mount | SC-90, SOD-323F | SOD-323 | -55°C ~ 150°C |
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Semtech Corporation |
DIODE GEN PURP 125V 300MA AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 125 V
- Current - Average Rectified (Io): 300mA
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4.5 ns
- Current - Reverse Leakage @ Vr: 500 nA @ 125 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: Axial
- Supplier Device Package: Axial
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: - |
Request a Quote |
|
125 V | 300mA | 1.1 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4.5 ns | 500 nA @ 125 V | - | Through Hole | Axial | Axial | -65°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 1A DO214AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 60 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
60 V | 1A | 750 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 60 V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 800V 1A DO214BA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 800 V
- Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214BA
- Supplier Device Package: DO-214BA (GF1)
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: - |
Request a Quote |
|
800 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 5 µA @ 800 V | 8.5pF @ 4V, 1MHz | Surface Mount | DO-214BA | DO-214BA (GF1) | -65°C ~ 175°C |
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Vishay General Semiconductor - Diodes Division |
DIODE SCHOTTKY 120V 1.9A DO220AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 120 V
- Current - Average Rectified (Io): 1.9A
- Voltage - Forward (Vf) (Max) @ If: 620 mV @ 1.5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 300 µA @ 120 V
- Capacitance @ Vr, F: 290pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-220AA
- Supplier Device Package: DO-220AA (SMP)
- Operating Temperature - Junction: -40°C ~ 175°C
|
Package: - |
Stock771 |
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120 V | 1.9A | 620 mV @ 1.5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300 µA @ 120 V | 290pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -40°C ~ 175°C |
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Microchip Technology |
DIODE GEN PURP 50V 200MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4 ns
- Current - Reverse Leakage @ Vr: 100 nA @ 50 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-204AH (DO-35)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Stock5,160 |
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50 V | 200mA | 1 V @ 10 mA | Small Signal =< 200mA (Io), Any Speed | 4 ns | 100 nA @ 50 V | - | Through Hole | DO-204AH, DO-35, Axial | DO-204AH (DO-35) | -65°C ~ 175°C |
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onsemi |
DIODE SIL CARB 650V 15A TO220-2L
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 200 µA @ 650 V
- Capacitance @ Vr, F: 575pF @ 1V, 100kHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2L
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock4,692 |
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650 V | 15A | 1.75 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 575pF @ 1V, 100kHz | Through Hole | TO-220-2 | TO-220-2L | -55°C ~ 175°C |
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Diodes Incorporated |
DIODE GEN PURPOSE
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
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