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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.5KV 500MA DO204
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1500V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 100mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 300ns
- Current - Reverse Leakage @ Vr: 5µA @ 1500V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AL, DO-41, Axial |
Stock3,552 |
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1500V | 500mA | 1.8V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 1500V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Semtech Corporation |
DIODE GEN PURP 2KV 330MA AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2000V
- Current - Average Rectified (Io): 330mA
- Voltage - Forward (Vf) (Max) @ If: 5V @ 125mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2µs
- Current - Reverse Leakage @ Vr: 250nA @ 2000V
- Capacitance @ Vr, F: 1.7pF @ 5V, 1MHz
- Mounting Type: Through Hole
- Package / Case: Axial
- Supplier Device Package: -
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: Axial |
Stock36,000 |
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2000V | 330mA | 5V @ 125mA | Standard Recovery >500ns, > 200mA (Io) | 2µs | 250nA @ 2000V | 1.7pF @ 5V, 1MHz | Through Hole | Axial | - | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 100V 3A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 2.04V @ 9.4A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 1µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: A, Axial
- Supplier Device Package: A-PAK
- Operating Temperature - Junction: -65°C ~ 155°C
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Package: A, Axial |
Stock2,400 |
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100V | 3A | 2.04V @ 9.4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 100V | - | Through Hole | A, Axial | A-PAK | -65°C ~ 155°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 16A 45V TO-220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 16A
- Voltage - Forward (Vf) (Max) @ If: 630mV @ 16A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200µA @ 45V
- Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: TO-220-2 |
Stock6,000 |
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45V | 16A | 630mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 45V | 1400pF @ 5V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE SCHOTTKY 60V 1A DO204AL
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 690mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 60V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: DO-204AL, DO-41, Axial |
Stock4,416 |
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60V | 1A | 690mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 10V 1A POWERMITE
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 10V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 415mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 10V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-216AA
- Supplier Device Package: Powermite
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: DO-216AA |
Stock4,096 |
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10V | 1A | 415mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 10V | - | Surface Mount | DO-216AA | Powermite | -55°C ~ 125°C |
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Sanken |
DIODE GEN PURP 400V 600MA AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 600mA
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 600mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.5µs
- Current - Reverse Leakage @ Vr: 10µA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: Axial
- Supplier Device Package: -
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: Axial |
Stock7,632 |
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400V | 600mA | 1.5V @ 600mA | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 10µA @ 400V | - | Through Hole | Axial | - | -40°C ~ 150°C |
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TSC America Inc. |
DIODE, FAST, 0.8A, 100V, 150NS,
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 800mA
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 5µA @ 100V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-219AB |
Stock3,376 |
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100V | 800mA | 1.3V @ 800mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 100V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, FAST, 0.8A, 600V, 250NS,
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 800mA
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 250ns
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-219AB |
Stock7,504 |
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600V | 800mA | 1.3V @ 800mA | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 600V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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SMC Diode Solutions |
DIODE SCHOTTKY 200V D2PAK
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 160µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,976 |
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200V | - | 1.1V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 160µA @ 200V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 150°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 100V 1A SOD123FL
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 810mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 400nA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: PMDU
- Operating Temperature - Junction: 150°C (Max)
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Package: SOD-123F |
Stock39,000 |
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100V | 1A | 810mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400nA @ 100V | - | Surface Mount | SOD-123F | PMDU | 150°C (Max) |
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SMC Diode Solutions |
DIODE SCHOTTKY 600V ITO220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: 2.4V @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Insulated, TO-220AC
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-220-2 Insulated, TO-220AC |
Stock14,700 |
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600V | - | 2.4V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 600V | - | Through Hole | TO-220-2 Insulated, TO-220AC | ITO-220AC | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE RECT SBR 45V 5A POWERDI5
- Diode Type: Super Barrier
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 5A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 280µA @ 45V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: PowerDI? 5
- Supplier Device Package: PowerDI?5
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: PowerDI? 5 |
Stock7,680 |
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45V | 5A | 600mV @ 5A | Standard Recovery >500ns, > 200mA (Io) | - | 280µA @ 45V | - | Surface Mount | PowerDI? 5 | PowerDI?5 | -55°C ~ 150°C |
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Micro Commercial Co |
DIODE GEN PURP 3KV 200MA DO15
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 3000 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 500 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 1.2 µs
- Current - Reverse Leakage @ Vr: 5 µA @ 3000 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-15
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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3000 V | 200mA | 2.3 V @ 500 mA | Small Signal =< 200mA (Io), Any Speed | 1.2 µs | 5 µA @ 3000 V | - | Through Hole | DO-204AC, DO-15, Axial | DO-15 | -55°C ~ 150°C |
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Micro Commercial Co |
SUPERFAST RECTIFIERS 600V 30A, T
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 45 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 600 V
- Capacitance @ Vr, F: 180pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock15,000 |
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600 V | 30A | 2 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 45 ns | 5 µA @ 600 V | 180pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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Panjit International Inc. |
DIODE SCHOTTKY 60V 1A SMB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 740 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 60 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: SMB (DO-214AA)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Request a Quote |
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60 V | 1A | 740 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 60 V | - | Surface Mount | DO-214AA, SMB | SMB (DO-214AA) | -65°C ~ 175°C |
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Diotec Semiconductor |
IC
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75 ns
- Current - Reverse Leakage @ Vr: 3 µA @ 800 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-213AA
- Supplier Device Package: DO-213AA, MINI-MELF
- Operating Temperature - Junction: -50°C ~ 175°C
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Package: - |
Request a Quote |
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800 V | 1A | 1.8 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 3 µA @ 800 V | - | Surface Mount | DO-213AA | DO-213AA, MINI-MELF | -50°C ~ 175°C |
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WeEn Semiconductors |
DIODE SIL CARBIDE 650V 10A D2PAK
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Capacitance @ Vr, F: 323pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Request a Quote |
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650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 323pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | DPAK | -55°C ~ 175°C |
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Vishay |
8A, 100V, SMPC TRENCH SKY RECT.
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 3.6A
- Voltage - Forward (Vf) (Max) @ If: 690 mV @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 450 µA @ 100 V
- Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: - |
Stock19,500 |
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100 V | 3.6A | 690 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 450 µA @ 100 V | 1150pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
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Diodes Incorporated |
DIODE SCHOTTKY 40V 350MA SOD123
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 350mA
- Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 10 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 30 V
- Capacitance @ Vr, F: 28pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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40 V | 350mA | 600 mV @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 10 ns | 5 µA @ 30 V | 28pF @ 0V, 1MHz | Surface Mount | SOD-123 | SOD-123 | -55°C ~ 150°C |
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Central Semiconductor Corp |
DIODE GEN PURP 75V 250MA SOD523
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 75 V
- Current - Average Rectified (Io): 250mA
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3 µs
- Current - Reverse Leakage @ Vr: 500 pA @ 75 V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: SOD-523
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Stock486,891 |
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75 V | 250mA | 1.1 V @ 100 mA | Standard Recovery >500ns, > 200mA (Io) | 3 µs | 500 pA @ 75 V | 2pF @ 0V, 1MHz | Surface Mount | SC-79, SOD-523 | SOD-523 | -65°C ~ 150°C |
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Micro Commercial Co |
DIODE GEN PURP 1KV 5A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
- Capacitance @ Vr, F: 65pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
1000 V | 5A | 1.35 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 10 µA @ 1000 V | 65pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Vishay General Semiconductor - Diodes Division |
DIODE SCHOTTKY 100V 6A SLIMDPAK
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 780 mV @ 6 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 150 µA @ 100 V
- Capacitance @ Vr, F: 620pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: SlimDPAK
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: - |
Stock13,200 |
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100 V | 6A | 780 mV @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150 µA @ 100 V | 620pF @ 4V, 1MHz | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | SlimDPAK | -40°C ~ 175°C |
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Microchip Technology |
DIODE SCHOTTKY 50V 33MA DO213AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 33mA
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200 nA @ 50 V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AA
- Supplier Device Package: DO-213AA
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Stock333 |
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50 V | 33mA | 1 V @ 15 mA | Small Signal =< 200mA (Io), Any Speed | - | 200 nA @ 50 V | 2pF @ 0V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 150°C |
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onsemi |
DIODE GEN PURP 100V 200MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 75 V
- Capacitance @ Vr, F: 4pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Request a Quote |
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100 V | 200mA | 1 V @ 10 mA | Small Signal =< 200mA (Io), Any Speed | 4 ns | 5 µA @ 75 V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -55°C ~ 175°C |
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Diodes Incorporated |
DIODE SCHOTTKY 40V 200MA SOT23-3
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 5 ns
- Current - Reverse Leakage @ Vr: 200 nA @ 30 V
- Capacitance @ Vr, F: 4pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: - |
Request a Quote |
|
40 V | 200mA | 1 V @ 40 mA | Small Signal =< 200mA (Io), Any Speed | 5 ns | 200 nA @ 30 V | 4pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | -55°C ~ 125°C |
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Panjit International Inc. |
DIODE SCHOTTKY 40V 1A SOD323HE
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 580 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 40 V
- Capacitance @ Vr, F: 50pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-90, SOD-323F
- Supplier Device Package: SOD-323HE
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock6,435 |
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40 V | 1A | 580 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 40 V | 50pF @ 4V, 1MHz | Surface Mount | SC-90, SOD-323F | SOD-323HE | -55°C ~ 150°C |
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Microchip Technology |
DIODE GEN PURP 200V 12A TO254
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 200 V
- Capacitance @ Vr, F: 300pF @ 5V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-254-3, TO-254AA
- Supplier Device Package: TO-254
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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200 V | 12A | 1.05 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 200 V | 300pF @ 5V, 1MHz | Through Hole | TO-254-3, TO-254AA | TO-254 | - |