Page 799 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

IDH02SG120XKSA1
Infineon Technologies

DIODE SCHOTTKY 1200V 2A TO220-2

Package: TO-220-2

Stock7,920
PR1002GL-T
Diodes Incorporated

DIODE GEN PURP 100V 1A DO41

Package: DO-204AL, DO-41, Axial

Stock6,224
SBR8215
Microsemi Corporation

DIODE SCHOTTKY 80A 15V DO5

Package: DO-203AB, DO-5, Stud

Stock7,584
FR12KR05
GeneSiC Semiconductor

DIODE GEN PURP REV 800V 12A DO4

Package: DO-203AA, DO-4, Stud

Stock6,624
NSB8JTHE3_A/P
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 8A TO263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,968
BYW29-50HE3/45
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 8A TO220AC

Package: TO-220-2

Stock4,784
SR802HA0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 8A, 2

Package: DO-201AD, Axial

Stock7,376
SJPJ-H3VR
Sanken

DIODE SCHOTTKY 30V 2A SMD

Package: 2-SMD, J-Lead

Stock5,504
MBR5200VP-E1
Diodes Incorporated

DIODE SCHOTTKY 200V 5A DO27

Package: DO-201AA, DO-27, Axial

Stock3,344
GP10Q-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 1A DO204AL

Package: DO-204AL, DO-41, Axial

Stock4,656
CDBK0520
Comchip Technology

DIODE SCHOTTKY 20V 500MA SOD123F

Package: SOD-123F

Stock3,344
DB2631400L
Panasonic Electronic Components

DIODE GEN PURP 30V 30MA SOD882

Package: SOD-882

Stock5,296
CD1408-R1600
Bourns Inc.

DIODE GEN PURP 600V 1A 1408

Package: Chip, Concave Terminals

Stock3,424
RS1ML MHG
TSC America Inc.

DIODE, FAST, 0.8A, 1000V, 500NS,

Package: DO-219AB

Stock2,048
STPS20M100SR
STMicroelectronics

DIODE SCHOTTKY 100V 20A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock2,000
STTH5L04DEE-TR
STMicroelectronics

DIODE GEN PURP 400V 5A POWERFLAT

Package: 8-PowerVDFN

Stock4,576
SBRT25U80SLP-13
Diodes Incorporated

DIODE SBR 80V 25A POWERDI5060-8

Package: 8-PowerTDFN

Stock3,552
D6015LTP
Littelfuse Inc.

DIODE GEN PURP 600V 9.5A TO220

Package: TO-220-3 Isolated Tab

Stock7,560
VS-60APF04-M3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 60A TO247AC

Package: TO-247-3

Stock14,196
SK12-13-F
Diodes Incorporated

DIODE SCHOTTKY 20V 1A SMB

Package: DO-214AA, SMB

Stock72,000

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
IDH02SG120XKSA1	Infineon Technologies	DIODE SCHOTTKY 1200V 2A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 2A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 48µA @ 1200V Capacitance @ Vr, F: 125pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-220-2	Stock7,920	1200V	2A (DC)	1.8V @ 2A	No Recovery Time > 500mA (Io)	0ns	48µA @ 1200V	125pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2	-55°C ~ 175°C
PR1002GL-T	Diodes Incorporated	DIODE GEN PURP 100V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-204AL, DO-41, Axial	Stock6,224	100V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
SBR8215	Microsemi Corporation	DIODE SCHOTTKY 80A 15V DO5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 15V Current - Average Rectified (Io): 80A Voltage - Forward (Vf) (Max) @ If: 500mV @ 80A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 15V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -	Package: DO-203AB, DO-5, Stud	Stock7,584	15V	80A	500mV @ 80A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 15V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-
FR12KR05	GeneSiC Semiconductor	DIODE GEN PURP REV 800V 12A DO4 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 800mV @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 25µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-203AA, DO-4, Stud	Stock6,624	800V	12A	800mV @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	25µA @ 100V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 150°C
NSB8JTHE3_A/P	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 8A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: 55pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,968	600V	8A	1.1V @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 600V	55pF @ 4V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-55°C ~ 150°C
BYW29-50HE3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 8A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 150°C	Package: TO-220-2	Stock4,784	50V	8A	1.3V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	10µA @ 50V	45pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-65°C ~ 150°C
SR802HA0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 8A, 2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 20V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 125°C	Package: DO-201AD, Axial	Stock7,376	20V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
SJPJ-H3VR	Sanken	DIODE SCHOTTKY 30V 2A SMD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 450mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, J-Lead Supplier Device Package: 2-SMD Operating Temperature - Junction: -40°C ~ 150°C	Package: 2-SMD, J-Lead	Stock5,504	30V	2A	450mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 30V	-	Surface Mount	2-SMD, J-Lead	2-SMD	-40°C ~ 150°C
MBR5200VP-E1	Diodes Incorporated	DIODE SCHOTTKY 200V 5A DO27 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 950mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-27 Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-201AA, DO-27, Axial	Stock3,344	200V	5A	950mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 200V	-	Through Hole	DO-201AA, DO-27, Axial	DO-27	-65°C ~ 150°C
GP10Q-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 5µA @ 1200V Capacitance @ Vr, F: 7pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-204AL, DO-41, Axial	Stock4,656	1200V	1A	1.2V @ 1A	Standard Recovery >500ns, > 200mA (Io)	3µs	5µA @ 1200V	7pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 150°C
CDBK0520	Comchip Technology	DIODE SCHOTTKY 20V 500MA SOD123F Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 470mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 20V Capacitance @ Vr, F: 100pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F Operating Temperature - Junction: 125°C (Max)	Package: SOD-123F	Stock3,344	20V	500mA	470mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 20V	100pF @ 0V, 1MHz	Surface Mount	SOD-123F	SOD-123F	125°C (Max)
DB2631400L	Panasonic Electronic Components	DIODE GEN PURP 30V 30MA SOD882 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 30mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 30mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1ns Current - Reverse Leakage @ Vr: 300nA @ 30V Capacitance @ Vr, F: 1.5pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: SOD-882 Operating Temperature - Junction: 125°C (Max)	Package: SOD-882	Stock5,296	30V	30mA (DC)	1V @ 30mA	Small Signal =< 200mA (Io), Any Speed	1ns	300nA @ 30V	1.5pF @ 10V, 1MHz	Surface Mount	SOD-882	SOD-882	125°C (Max)
CD1408-R1600	Bourns Inc.	DIODE GEN PURP 600V 1A 1408 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 1µA @ 600V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: Chip, Concave Terminals Supplier Device Package: 1408 Operating Temperature - Junction: -65°C ~ 175°C	Package: Chip, Concave Terminals	Stock3,424	600V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	3µs	1µA @ 600V	12pF @ 4V, 1MHz	Surface Mount	Chip, Concave Terminals	1408	-65°C ~ 175°C
RS1ML MHG	TSC America Inc.	DIODE, FAST, 0.8A, 1000V, 500NS, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-219AB	Stock2,048	-	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
STPS20M100SR	STMicroelectronics	DIODE SCHOTTKY 100V 20A I2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 850mV @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA Supplier Device Package: I2PAK Operating Temperature - Junction: 150°C (Max)	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock2,000	100V	20A	850mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	40µA @ 100V	-	Through Hole	TO-262-3 Long Leads, I2Pak, TO-262AA	I2PAK	150°C (Max)
STTH5L04DEE-TR	STMicroelectronics	DIODE GEN PURP 400V 5A POWERFLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 2.5µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerFlat? (3.3x3.3) Operating Temperature - Junction: 150°C (Max)	Package: 8-PowerVDFN	Stock4,576	400V	5A	1.25V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	2.5µA @ 400V	-	Surface Mount	8-PowerVDFN	PowerFlat? (3.3x3.3)	150°C (Max)
SBRT25U80SLP-13	Diodes Incorporated	DIODE SBR 80V 25A POWERDI5060-8 Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 610mV @ 25A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 80V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 Operating Temperature - Junction: -55°C ~ 150°C	Package: 8-PowerTDFN	Stock3,552	80V	25A	610mV @ 25A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 80V	-	Surface Mount	8-PowerTDFN	PowerDI5060-8	-55°C ~ 150°C
D6015LTP	Littelfuse Inc.	DIODE GEN PURP 600V 9.5A TO220 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 9.5A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 9.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4µs Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Isolated Tab Supplier Device Package: TO-220 Isolated Tab Operating Temperature - Junction: -40°C ~ 125°C	Package: TO-220-3 Isolated Tab	Stock7,560	600V	9.5A	1.6V @ 9.5A	Standard Recovery >500ns, > 200mA (Io)	4µs	10µA @ 600V	-	Through Hole	TO-220-3 Isolated Tab	TO-220 Isolated Tab	-40°C ~ 125°C
VS-60APF04-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 60A TO247AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 180ns Current - Reverse Leakage @ Vr: 100µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-247-3	Stock14,196	400V	60A	1.3V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	180ns	100µA @ 400V	-	Through Hole	TO-247-3	TO-247AC	-40°C ~ 150°C
SK12-13-F	Diodes Incorporated	DIODE SCHOTTKY 20V 1A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 20V Capacitance @ Vr, F: 110pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 125°C	Package: DO-214AA, SMB	Stock72,000	20V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	110pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 125°C
NTE6047	NTE Electronics, Inc	DIODE GEN PURP 1KV 85A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 85A Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 267 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1 µs Current - Reverse Leakage @ Vr: 100 µA @ 1000 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -40°C ~ 125°C	Package: -	Request a Quote	1000 V	85A	1.75 V @ 267 A	Standard Recovery >500ns, > 200mA (Io)	1 µs	100 µA @ 1000 V	-	Stud Mount	DO-203AA, DO-5, Stud	DO-5	-40°C ~ 125°C
ND171N14KHPSA1	Infineon Technologies	DIODE GEN PURP 1.4KV 104A PB34-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1400 V Current - Average Rectified (Io): 104A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 mA @ 1400 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: BG-PB34-1 Operating Temperature - Junction: -40°C ~ 135°C	Package: -	Request a Quote	1400 V	104A	-	Standard Recovery >500ns, > 200mA (Io)	-	20 mA @ 1400 V	-	Chassis Mount	Module	BG-PB34-1	-40°C ~ 135°C
MER3DAFC-AU_R1_007A1	Panjit International Inc.	DIODE GEN PURP 200V 3A SMAF-C Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: 31pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: SMAF-C Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Request a Quote	200 V	3A	950 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	1 µA @ 200 V	31pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	SMAF-C	-55°C ~ 175°C
UGF8J	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 8A ITO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 30 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock3,000	600 V	8A	2.9 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	30 µA @ 600 V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
CEN619-BK	Central Semiconductor Corp	TRANSISTOR SMD Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
PMEG3020EGW-QX	Nexperia USA Inc.	DIODE SCHOTTKY 30V 2A SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 620 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 30 V Capacitance @ Vr, F: 60pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: 150°C	Package: -	Request a Quote	30 V	2A	620 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 30 V	60pF @ 1V, 1MHz	Surface Mount	SOD-123	SOD-123	150°C
FR301GP-AP	Micro Commercial Co	DIODE GEN PURP 50V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	50 V	3A	1.3 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 50 V	50pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
1SS400	Taiwan Semiconductor Corporation	SOD-523F, 100V, 0.2A, SWITCHING Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 100 nA @ 80 V Capacitance @ Vr, F: 4pF @ 500mV, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523F Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	100 V	200mA	1.2 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	100 nA @ 80 V	4pF @ 500mV, 1MHz	Surface Mount	SC-79, SOD-523	SOD-523F	-55°C ~ 150°C