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Central Semiconductor Corp |
DIODE GP 700V 500MA SOD80
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 700V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 500mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200nA @ 700V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AC, MINI-MELF, SOD-80
- Supplier Device Package: SOD-80
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-213AC, MINI-MELF, SOD-80 |
Stock7,728 |
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700V | 500mA | 1.1V @ 500mA | Standard Recovery >500ns, > 200mA (Io) | - | 200nA @ 700V | 10pF @ 4V, 1MHz | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | SOD-80 | -65°C ~ 175°C |
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Rohm Semiconductor |
DIODE GEN PURP 400V 800MA LLDS
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 800mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 800mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-213AC, MINI-MELF, SOD-80
- Supplier Device Package: LLDS
- Operating Temperature - Junction: 150°C (Max)
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Package: DO-213AC, MINI-MELF, SOD-80 |
Stock57,600 |
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400V | 800mA | 1V @ 800mA | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | - | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | LLDS | 150°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 4.5KV 475A B8
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 4500V
- Current - Average Rectified (Io): 475A
- Voltage - Forward (Vf) (Max) @ If: 1.66V @ 1000A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50mA @ 4500V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: B-8
- Supplier Device Package: B-8
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: B-8 |
Stock4,544 |
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4500V | 475A | 1.66V @ 1000A | Standard Recovery >500ns, > 200mA (Io) | - | 50mA @ 4500V | - | Chassis, Stud Mount | B-8 | B-8 | -40°C ~ 150°C |
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Diodes Incorporated |
DIODE GEN PURP 100V 1A SMB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 5µA @ 100V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: SMB
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-214AA, SMB |
Stock4,608 |
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100V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 100V | 15pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB | -65°C ~ 150°C |
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GeneSiC Semiconductor |
DIODE GEN PURP 200V 85A DO5
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 85A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500ns
- Current - Reverse Leakage @ Vr: 25µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -40°C ~ 125°C
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Package: DO-203AB, DO-5, Stud |
Stock2,016 |
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200V | 85A | 1.4V @ 85A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 25µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 500V 15A ITO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 500V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.75V @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 30µA @ 500V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack, Isolated Tab
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-220-2 Full Pack, Isolated Tab |
Stock4,320 |
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500V | 15A | 1.75V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 30µA @ 500V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 1.6A TO277A
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1.6A
- Voltage - Forward (Vf) (Max) @ If: 1.9V @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75ns
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Capacitance @ Vr, F: 42pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-277, 3-PowerDFN |
Stock7,568 |
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200V | 1.6A | 1.9V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 200V | 42pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO213AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 5µA @ 400V
- Capacitance @ Vr, F: 14pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AB, MELF (Glass)
- Supplier Device Package: DO-213AB
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-213AB, MELF (Glass) |
Stock7,408 |
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400V | 1A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | 14pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 500MA DO213
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 1.35V @ 500mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 5µA @ 400V
- Capacitance @ Vr, F: 7pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AA (Glass)
- Supplier Device Package: DO-213AA (GL34)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-213AA (Glass) |
Stock5,712 |
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400V | 500mA | 1.35V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | 7pF @ 4V, 1MHz | Surface Mount | DO-213AA (Glass) | DO-213AA (GL34) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 1A DO204AL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -
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Package: DO-204AL, DO-41, Axial |
Stock2,016 |
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800V | 1A | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | - |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 0.5A,
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 550mV @ 500mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 40V
- Capacitance @ Vr, F: 110pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: DO-204AL, DO-41, Axial |
Stock4,304 |
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40V | 500mA | 550mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 110pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 125°C |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 1A, 1
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50µA @ 150V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-219AB |
Stock4,384 |
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150V | 1A | 900mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 150V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Comchip Technology |
DIODE GEN PURP 80V 100MA 0603
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io): 100mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 50nA @ 75V
- Capacitance @ Vr, F: 3pF @ 0.5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, No Lead
- Supplier Device Package: 0603/SOD-523F
- Operating Temperature - Junction: 125°C (Max)
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Package: 2-SMD, No Lead |
Stock5,104 |
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80V | 100mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 50nA @ 75V | 3pF @ 0.5V, 1MHz | Surface Mount | 2-SMD, No Lead | 0603/SOD-523F | 125°C (Max) |
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Panasonic Electronic Components |
DIODE SCHOTTKY 40V 3A TMINIP2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 3A (DC)
- Voltage - Forward (Vf) (Max) @ If: 540mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 15ns
- Current - Reverse Leakage @ Vr: 250µA @ 40V
- Capacitance @ Vr, F: 50pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: TMiniP2-F2-B
- Operating Temperature - Junction: 150°C (Max)
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Package: SOD-128 |
Stock3,312 |
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40V | 3A (DC) | 540mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 15ns | 250µA @ 40V | 50pF @ 10V, 1MHz | Surface Mount | SOD-128 | TMiniP2-F2-B | 150°C (Max) |
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WeEn Semiconductors |
DIODE GEN PURP 600V 10A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 2V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: 175°C (Max)
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Package: TO-220-2 |
Stock49,230 |
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600V | 10A | 2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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Diodes Incorporated |
DIODE SCHOTTKY 20V 1A DO41
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 750mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 20V
- Capacitance @ Vr, F: 110pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-41
- Operating Temperature - Junction: -65°C ~ 125°C
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Package: DO-204AL, DO-41, Axial |
Stock15,552 |
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20V | 1A | 750mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | 110pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 125°C |
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ON Semiconductor |
DIODE SCHOTTKY 30V 1A POWERMITE
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 380mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 410µA @ 30V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-216AA
- Supplier Device Package: Powermite
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: DO-216AA |
Stock1,791,492 |
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30V | 1A | 380mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 410µA @ 30V | - | Surface Mount | DO-216AA | Powermite | -55°C ~ 125°C |
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Qorvo |
DIODE SIL CARB 1.2KV 50A TO247-3
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 50A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
- Capacitance @ Vr, F: 2340pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock20,364 |
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1200 V | 50A | 1.7 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 1200 V | 2340pF @ 1V, 1MHz | Through Hole | TO-247-3 | TO-247-3 | -55°C ~ 175°C |
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onsemi |
DIODE SIL CARB 1.2KV 61A TO247-2
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 61A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
- Capacitance @ Vr, F: 2250pF @ 1V, 100kHz
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock1,173 |
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1200 V | 61A | - | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 2250pF @ 1V, 100kHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 10A TO277A
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 680 mV @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 150 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock338,016 |
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100 V | 10A | 680 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150 µA @ 100 V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
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Microchip Technology |
DIODE GEN PURP 400MA THINKEY2
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): 400mA
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: ThinKey™2
- Supplier Device Package: ThinKey™2
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Request a Quote |
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- | 400mA | 1 V @ 400 mA | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Surface Mount | ThinKey™2 | ThinKey™2 | -65°C ~ 175°C |
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Taiwan Semiconductor Corporation |
5A, 400V, STANDARD RECOVERY RECT
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.5 µs
- Current - Reverse Leakage @ Vr: 10 µA @ 400 V
- Capacitance @ Vr, F: 60pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock17,850 |
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400 V | 5A | 1.15 V @ 5 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 10 µA @ 400 V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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SMC Diode Solutions |
DIODE SIL CARB 650V 6A ITO220AC
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Capacitance @ Vr, F: 150pF @ 5V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack, Isolated Tab
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock645 |
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650 V | 6A | 1.8 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 150pF @ 5V, 1MHz | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -55°C ~ 175°C |
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Microchip Technology |
DIODE SCHOTTKY 16V 75MA DO213AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 16 V
- Current - Average Rectified (Io): 75mA
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 35 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 150 nA @ 16 V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AA
- Supplier Device Package: DO-213AA
- Operating Temperature - Junction: -65°C ~ 150°C
|
Package: - |
Request a Quote |
|
16 V | 75mA | 1 V @ 35 mA | Small Signal =< 200mA (Io), Any Speed | - | 150 nA @ 16 V | 2pF @ 0V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 150°C |
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Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 600V 2A DFN3820A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.2 µs
- Current - Reverse Leakage @ Vr: 5 µA @ 600 V
- Capacitance @ Vr, F: 12pF @ 4V, 1MHz
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 2-VDFN
- Supplier Device Package: DFN3820A
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock34,110 |
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600 V | 2A | 1.1 V @ 2 A | Standard Recovery >500ns, > 200mA (Io) | 1.2 µs | 5 µA @ 600 V | 12pF @ 4V, 1MHz | Surface Mount, Wettable Flank | 2-VDFN | DFN3820A | -55°C ~ 175°C |
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onsemi |
DIODE SCHOTTKY 1A 30V SMA
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
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Microchip Technology |
DIODE GEN PURP 900V 1A D-5A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 900 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 60 ns
- Current - Reverse Leakage @ Vr: 500 nA @ 150 V
- Capacitance @ Vr, F: 10pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: D-5A
- Operating Temperature - Junction: -65°C ~ 150°C
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900 V | 1A | 1.55 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 500 nA @ 150 V | 10pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
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Panjit International Inc. |
DIODE GEN PURP 800V 2A DO15
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 800 V
- Capacitance @ Vr, F: 35pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-15
- Operating Temperature - Junction: -55°C ~ 150°C
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800 V | 2A | 1.3 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 1 µA @ 800 V | 35pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-15 | -55°C ~ 150°C |