Page 835 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

SF10GG-A
Diodes Incorporated

DIODE GEN PURP 400V 1A AXIAL

Package: DO-204AL, DO-41, Axial

Stock5,072
TVR06JHE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 600MA DO204

Package: DO-204AL, DO-41, Axial

Stock3,392
MUR450PFRL
ON Semiconductor

DIODE GEN PURP 520V 4A DO201AD

Package: DO-201AA, DO-27, Axial

Stock7,728
1N3070
Microsemi Corporation

DIODE GEN PURP 175V 100MA DO7

Package: DO-204AA, DO-7, Axial

Stock7,920
VT3080S-M3/4W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30A 80V TO-220AB

Package: TO-220-3

Stock3,680
AR3PM-M3/87A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 1KV 1.6A TO277

Package: TO-277, 3-PowerDFN

Stock5,056
MPG06J-E3/53
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A MPG06

Package: MPG06, Axial

Stock4,208
SK39AHR3G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 9

Package: DO-214AC, SMA

Stock6,944
SK24AHR3G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 4

Package: DO-214AC, SMA

Stock3,360
S3AB M4G
TSC America Inc.

DIODE, 3A, 50V, DO-214AA (SMB)

Package: DO-214AA, SMB

Stock7,280
GPP10A-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 1A DO204AL

Package: DO-204AL, DO-41, Axial

Stock6,624
STTH506B
STMicroelectronics

DIODE GEN PURP 600V 5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,656
STTH1202D
STMicroelectronics

DIODE GEN PURP 200V 12A TO220AC

Package: TO-220-2

Stock16,188
EGF1T-E3/67A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.3KV 1A DO214BA

Package: DO-214BA

Stock991,800
2CL75
Diotec Semiconductor

HV DIODE D2.5X12 16000V 80NS

Package: -

Request a Quote
SBLB1040-TP
Micro Commercial Co

DIODE SCHOTTKY 40V 10A D2PAK

Package: -

Request a Quote
VS-E5TH1512THN3
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1.2KV 15A TO220AC

Package: -

Request a Quote
VS-MT230BD16CCB
Vishay General Semiconductor - Diodes Division

DIODE

Package: -

Request a Quote
VS-G1736UR
Vishay General Semiconductor - Diodes Division

DIODE

Package: -

Request a Quote
RL202-AP
Micro Commercial Co

DIODE GEN PURP 100V 2A DO15

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SF10GG-A	Diodes Incorporated	DIODE GEN PURP 400V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: 75pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-204AL, DO-41, Axial	Stock5,072	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	10µA @ 400V	75pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
TVR06JHE3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 600MA DO204 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 600mA Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AL, DO-41, Axial	Stock3,392	600V	600mA	-	Fast Recovery =< 500ns, > 200mA (Io)	300ns	-	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
MUR450PFRL	ON Semiconductor	DIODE GEN PURP 520V 4A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 520V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 95ns Current - Reverse Leakage @ Vr: 5µA @ 520V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-201AA, DO-27, Axial	Stock7,728	520V	4A	1.15V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	95ns	5µA @ 520V	-	Through Hole	DO-201AA, DO-27, Axial	DO-201AD	-65°C ~ 175°C
1N3070	Microsemi Corporation	DIODE GEN PURP 175V 100MA DO7 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 175V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 175V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AA, DO-7, Axial Supplier Device Package: DO-7 Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AA, DO-7, Axial	Stock7,920	175V	100mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 175V	-	Through Hole	DO-204AA, DO-7, Axial	DO-7	-65°C ~ 175°C
VT3080S-M3/4W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30A 80V TO-220AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 950mV @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 80V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-220-3	Stock3,680	80V	30A	950mV @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 80V	-	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
AR3PM-M3/87A	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 1KV 1.6A TO277 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1.6A (DC) Voltage - Forward (Vf) (Max) @ If: 1.9V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 120ns Current - Reverse Leakage @ Vr: 10µA @ 1000V Capacitance @ Vr, F: 34pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-277, 3-PowerDFN	Stock5,056	1000V	1.6A (DC)	1.9V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	120ns	10µA @ 1000V	34pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
MPG06J-E3/53	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A MPG06 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 600ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: MPG06, Axial Supplier Device Package: MPG06 Operating Temperature - Junction: -55°C ~ 150°C	Package: MPG06, Axial	Stock4,208	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	600ns	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	MPG06, Axial	MPG06	-55°C ~ 150°C
SK39AHR3G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 3A, 9 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 90V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AC, SMA	Stock6,944	90V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SK24AHR3G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 2A, 4 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AC, SMA	Stock3,360	40V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
S3AB M4G	TSC America Inc.	DIODE, 3A, 50V, DO-214AA (SMB) Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AA, SMB	Stock7,280	50V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 50V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
GPP10A-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-204AL, DO-41, Axial	Stock6,624	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
STTH506B	STMicroelectronics	DIODE GEN PURP 600V 5A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.85V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak Operating Temperature - Junction: 175°C (Max)	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,656	600V	5A	1.85V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-Pak	175°C (Max)
STTH1202D	STMicroelectronics	DIODE GEN PURP 200V 12A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max)	Package: TO-220-2	Stock16,188	200V	12A	1.1V @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	-	Through Hole	TO-220-2	TO-220AC	175°C (Max)
EGF1T-E3/67A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.3KV 1A DO214BA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1300V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 1300V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214BA Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214BA	Stock991,800	1300V	1A	3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1300V	-	Surface Mount	DO-214BA	DO-214BA (GF1)	-55°C ~ 150°C
2CL75	Diotec Semiconductor	HV DIODE D2.5X12 16000V 80NS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 16000 V Current - Average Rectified (Io): 5mA Voltage - Forward (Vf) (Max) @ If: 60 V @ 10 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 80 ns Current - Reverse Leakage @ Vr: 2 µA @ 16000 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: Axial Operating Temperature - Junction: -40°C ~ 120°C	Package: -	Request a Quote	16000 V	5mA	60 V @ 10 mA	Small Signal =< 200mA (Io), Any Speed	80 ns	2 µA @ 16000 V	-	Through Hole	Axial	Axial	-40°C ~ 120°C
SBLB1040-TP	Micro Commercial Co	DIODE SCHOTTKY 40V 10A D2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 125°C	Package: -	Request a Quote	40 V	10A	600 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	D2PAK	-40°C ~ 125°C
VS-E5TH1512THN3	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 1.2KV 15A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75.5 ns Current - Reverse Leakage @ Vr: 50 µA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Request a Quote	1200 V	15A	2.5 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	75.5 ns	50 µA @ 1200 V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
VS-MT230BD16CCB	Vishay General Semiconductor - Diodes Division	DIODE Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
VS-G1736UR	Vishay General Semiconductor - Diodes Division	DIODE Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
RL202-AP	Micro Commercial Co	DIODE GEN PURP 100V 2A DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	100 V	2A	1 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 100 V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-55°C ~ 150°C
S1MLW	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 1A SOD123W Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 1000 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock49,800	1000 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 1000 V	-	Surface Mount	SOD-123W	SOD-123W	-55°C ~ 175°C
JANS1N6643US	Microchip Technology	DIODE GP 50V 300MA B SQ-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	50 V	300mA	1.2 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	6 ns	-	5pF @ 0V, 1MHz	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C
M7FL-TP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: DO-221AC (SMA-FL) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	1000 V	1A	1.1 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5 µA @ 1000 V	-	Surface Mount	DO-221AC, SMA Flat Leads	DO-221AC (SMA-FL)	-55°C ~ 150°C
HER204G-TP	Micro Commercial Co	DIODE GEN PURP 300V 2A DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 300 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	300 V	2A	1 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 300 V	50pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-55°C ~ 150°C
SCS208AGC17	Rohm Semiconductor	DIODE SIL CARB 650V 8A TO220ACFP Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 8 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 160 µA @ 600 V Capacitance @ Vr, F: 291pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220ACFP Operating Temperature - Junction: 175°C	Package: -	Stock2,967	650 V	8A	1.55 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	160 µA @ 600 V	291pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220ACFP	175°C
ND171N18KHPSA2	Infineon Technologies	DIODE GEN PURP 1.8KV 171A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1800 V Current - Average Rectified (Io): 171A Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 mA @ 1800 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: - Operating Temperature - Junction: 150°C	Package: -	Stock3	1800 V	171A	1.26 V @ 500 A	Standard Recovery >500ns, > 200mA (Io)	-	20 mA @ 1800 V	-	Chassis Mount	Module	-	150°C
BYC30M-650PQ	WeEn Semiconductors	BYC30M-650P/TO220-2L/STANDARD MA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 38 ns Current - Reverse Leakage @ Vr: 30 µA @ 650 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2L Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	650 V	30A	2.75 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	38 ns	30 µA @ 650 V	-	Through Hole	TO-220-2	TO-220-2L	-65°C ~ 175°C
PCFF30H120SWF	onsemi	1200V/30A GEN7 FRD HS SAWN-ON-FO Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 222 ns Current - Reverse Leakage @ Vr: 16 A @ 1.2 kA Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Wafer Operating Temperature - Junction: -40°C ~ 175°C	Package: -	Request a Quote	1200 V	30A	1.9 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	222 ns	16 A @ 1.2 kA	-	Surface Mount	Die	Wafer	-40°C ~ 175°C