Page 851 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

IDV06S60CXKSA1
Infineon Technologies

DIODE SCHOTTKY 600V 6A TO220-2FP

Package: TO-220-2 Full Pack

Stock6,640
SIDC24D30SIC3
Infineon Technologies

DIODE SILICON 300V 10A WAFER

Package: Die

Stock6,688
20TQ040
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 20A TO220AC

Package: TO-220-2

Stock13,692
VS-41HFR120
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 40A DO203AB

Package: DO-203AB, DO-5, Stud

Stock5,920
DSEP6-06BS
IXYS

DIODE GEN PURP 600V 6A TO252AA

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,888
FESE16HT-E3/45
Vishay Semiconductor Diodes Division

DIODE GEN PURP 500V 16A TO220AC

Package: TO-220-2

Stock2,800
SFS1601G MNG
TSC America Inc.

DIODE, SUPER FAST, 16A, 50V, 35N

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,320
RK 39V
Sanken

DIODE SCHOTTKY 90V 2A AXIAL

Package: Axial

Stock4,480
RGL34BHE3/98
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 500MA DO213

Package: DO-213AA (Glass)

Stock5,568
UG06CHA1G
TSC America Inc.

DIODE, ULTRA FAST, 0.6A, 150V, 1

Package: T-18, Axial

Stock3,200
SK39A R3G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 9

Package: DO-214AC, SMA

Stock2,592
CD214B-R3100
Bourns Inc.

DIODE GEN PURP 100V 3A SMB

Package: DO-214AA, SMB

Stock4,192
FR3BTA
SMC Diode Solutions

DIODE GEN PURP 100V 3A SMC

Package: DO-214AB, SMC

Stock6,288
RSFJLHMTG
TSC America Inc.

DIODE, FAST, 0.5A, 600V, 250NS,

Package: DO-219AB

Stock3,824
1N4003GHB0G
TSC America Inc.

DIODE, 1A, 200V, AEC-Q101, DO-20

Package: DO-204AL, DO-41, Axial

Stock5,936
1N4151W-G3-08
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 150MA SOD123

Package: SOD-123

Stock5,424
1T2G A1G
TSC America Inc.

DIODE, 1A, 100V, TS-1

Package: T-18, Axial

Stock3,616
CS3D-E3/I
Vishay Semiconductor Diodes Division

DIODE GPP 200V 2A DO-214AB SMC

Package: DO-214AB, SMC

Stock110,718
VS-15ETX06FP-N3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 15A TO220FP

Package: TO-220-2 Full Pack

Stock19,188
JAN1N5618US-TR
Microchip Technology

DIODE GEN PURP 600V 1A D-5A

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
IDV06S60CXKSA1	Infineon Technologies	DIODE SCHOTTKY 600V 6A TO220-2FP Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 6A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 80µA @ 600V Capacitance @ Vr, F: 280pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: PG-TO220-2 Full Pack Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-220-2 Full Pack	Stock6,640	600V	6A (DC)	1.7V @ 6A	No Recovery Time > 500mA (Io)	0ns	80µA @ 600V	280pF @ 1V, 1MHz	Through Hole	TO-220-2 Full Pack	PG-TO220-2 Full Pack	-55°C ~ 175°C
SIDC24D30SIC3	Infineon Technologies	DIODE SILICON 300V 10A WAFER Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 300V Capacitance @ Vr, F: 600pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 175°C	Package: Die	Stock6,688	300V	10A (DC)	1.7V @ 10A	No Recovery Time > 500mA (Io)	0ns	200µA @ 300V	600pF @ 1V, 1MHz	Surface Mount	Die	Sawn on foil	-55°C ~ 175°C
20TQ040	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 20A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 570mV @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2.7mA @ 40V Capacitance @ Vr, F: 1400pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-220-2	Stock13,692	40V	20A	570mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	2.7mA @ 40V	1400pF @ 5V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
VS-41HFR120	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 40A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 125A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 9mA @ 1200V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -65°C ~ 190°C	Package: DO-203AB, DO-5, Stud	Stock5,920	1200V	40A	1.3V @ 125A	Standard Recovery >500ns, > 200mA (Io)	-	9mA @ 1200V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-65°C ~ 190°C
DSEP6-06BS	IXYS	DIODE GEN PURP 600V 6A TO252AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 2.66V @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 15ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 5pF @ 400V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,888	600V	6A	2.66V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	15ns	50µA @ 600V	5pF @ 400V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252AA	-55°C ~ 175°C
FESE16HT-E3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP 500V 16A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 500V Capacitance @ Vr, F: 145pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 150°C	Package: TO-220-2	Stock2,800	500V	16A	1.5V @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 500V	145pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-65°C ~ 150°C
SFS1601G MNG	TSC America Inc.	DIODE, SUPER FAST, 16A, 50V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 975mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,320	50V	16A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	80pF @ 4V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-55°C ~ 150°C
RK 39V	Sanken	DIODE SCHOTTKY 90V 2A AXIAL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 810mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 90V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	Package: Axial	Stock4,480	90V	2A	810mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 90V	-	Through Hole	Axial	-	-40°C ~ 150°C
RGL34BHE3/98	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 500MA DO213 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 4pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA (Glass) Supplier Device Package: DO-213AA (GL34) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-213AA (Glass)	Stock5,568	100V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	4pF @ 4V, 1MHz	Surface Mount	DO-213AA (Glass)	DO-213AA (GL34)	-65°C ~ 175°C
UG06CHA1G	TSC America Inc.	DIODE, ULTRA FAST, 0.6A, 150V, 1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 600mA Voltage - Forward (Vf) (Max) @ If: 950mV @ 600mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 15ns Current - Reverse Leakage @ Vr: 5µA @ 150V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	Package: T-18, Axial	Stock3,200	150V	600mA	950mV @ 600mA	Fast Recovery =< 500ns, > 200mA (Io)	15ns	5µA @ 150V	9pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SK39A R3G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 3A, 9 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 90V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AC, SMA	Stock2,592	90V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
CD214B-R3100	Bourns Inc.	DIODE GEN PURP 100V 3A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB (DO-214AA) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-214AA, SMB	Stock4,192	100V	3A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	5µA @ 100V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB (DO-214AA)	-65°C ~ 175°C
FR3BTA	SMC Diode Solutions	DIODE GEN PURP 100V 3A SMC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-214AB, SMC	Stock6,288	100V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-65°C ~ 150°C
RSFJLHMTG	TSC America Inc.	DIODE, FAST, 0.5A, 600V, 250NS, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 4pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-219AB	Stock3,824	600V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
1N4003GHB0G	TSC America Inc.	DIODE, 1A, 200V, AEC-Q101, DO-20 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-204AL, DO-41, Axial	Stock5,936	200V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4151W-G3-08	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 150MA SOD123 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 50nA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C	Package: SOD-123	Stock5,424	50V	150mA	1V @ 50mA	Small Signal =< 200mA (Io), Any Speed	4ns	50nA @ 50V	-	Surface Mount	SOD-123	SOD-123	-55°C ~ 150°C
1T2G A1G	TSC America Inc.	DIODE, 1A, 100V, TS-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	Package: T-18, Axial	Stock3,616	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
CS3D-E3/I	Vishay Semiconductor Diodes Division	DIODE GPP 200V 2A DO-214AB SMC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.8µs Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 26pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AB, SMC	Stock110,718	200V	2A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2.8µs	5µA @ 200V	26pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
VS-15ETX06FP-N3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 15A TO220FP Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 3.2V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 22ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220-2 Full Pack Operating Temperature - Junction: -65°C ~ 175°C	Package: TO-220-2 Full Pack	Stock19,188	600V	15A	3.2V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	22ns	50µA @ 600V	-	Through Hole	TO-220-2 Full Pack	TO-220-2 Full Pack	-65°C ~ 175°C
JAN1N5618US-TR	Microchip Technology	DIODE GEN PURP 600V 1A D-5A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Current - Reverse Leakage @ Vr: 500 nA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 200°C	Package: -	Request a Quote	600 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 600 V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 200°C
1N6940UTK3CS-TR	Microchip Technology	DIODE SCHOTTKY 15V 150A THINKEY3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 15 V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 150 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 mA @ 15 V Capacitance @ Vr, F: 10000pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: ThinKey™3 Supplier Device Package: ThinKey™3 Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	15 V	150A	500 mV @ 150 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5 mA @ 15 V	10000pF @ 5V, 1MHz	Surface Mount	ThinKey™3	ThinKey™3	-65°C ~ 150°C
BYG10J-AQ	Diotec Semiconductor	DIODE SMA 600V 1.5A 150C AECQ101 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC, SMA Operating Temperature - Junction: -50°C ~ 150°C	Package: -	Stock22,500	600 V	1.5A	1.15 V @ 1.5 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	5 µA @ 600 V	-	Surface Mount	DO-214AC, SMA	DO-214AC, SMA	-50°C ~ 150°C
SRT110	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 1A TS-1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	100 V	1A	800 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 100 V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SR806-AP	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 60 V Capacitance @ Vr, F: 380pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 125°C	Package: -	Request a Quote	60 V	8A	700 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 60 V	380pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
SS1H15LW	Taiwan Semiconductor Corporation	1A, 150V, SCHOTTKY RECTIFIER Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 nA @ 150 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock43,614	150 V	1A	850 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 nA @ 150 V	-	Surface Mount	SOD-123W	SOD-123W	-55°C ~ 175°C
GP10-4006-E3-54	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 800V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -	Package: -	Request a Quote	800 V	1A	-	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-
JANTX1N5711UB	Microchip Technology	DIODE SCHOTTKY 50V UB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 nA @ 50 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UB Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	50 V	-	1 V @ 15 mA	Small Signal =< 200mA (Io), Any Speed	-	200 nA @ 50 V	2pF @ 0V, 1MHz	Surface Mount	4-SMD, No Lead	UB	-65°C ~ 150°C
RF071LAM4STR	Rohm Semiconductor	DIODE GEN PURP 400V 1A PMDTM Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 700 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: PMDTM Operating Temperature - Junction: 150°C (Max)	Package: -	Stock18	400 V	1A	1.25 V @ 700 mA	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	10 µA @ 400 V	-	Surface Mount	SOD-128	PMDTM	150°C (Max)