Page 860 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

SF10BG-B
Diodes Incorporated

DIODE GEN PURP 100V 1A AXIAL

Package: DO-204AL, DO-41, Axial

Stock3,040
JANTX1N6626U
Microsemi Corporation

DIODE GEN PURP 200V 1.75A A-MELF

Package: SQ-MELF, A

Stock5,920
GP10QHE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 1A DO204AL

Package: DO-204AL, DO-41, Axial

Stock3,280
JANS1N3595-1
Microsemi Corporation

DIODE GEN PURP 125V 200MA DO35

Package: DO-204AH, DO-35, Axial

Stock4,512
1N6076US
Microsemi Corporation

DIODE GEN PURP 50V 6A D5B

Package: SQ-MELF, E

Stock6,640
MS109/TR12
Microsemi Corporation

DIODE SCHOTTKY 90V 1A DO204AL

Package: DO-204AL, DO-41, Axial

Stock5,936
FESB16AT-E3/45
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 16A TO263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,624
BYW172G-TAP
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 400V 3A SOD64

Package: SOD-64, Axial

Stock6,080
V10P45S-M3/86A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 4.4A TO277A

Package: TO-277, 3-PowerDFN

Stock267,600
6A100G B0G
TSC America Inc.

DIODE, 6A, 1000V, R-6

Package: R6, Axial

Stock3,696
EH 1V
Sanken

DIODE GEN PURP 400V 600MA AXIAL

Package: Axial

Stock2,480
SB2G-M3/5BT
Vishay Semiconductor Diodes Division

DIODE RECT 2A 400V DO-214AA

Package: DO-214AA, SMB

Stock3,424
CD0603-B0140L
Bourns Inc.

DIODE SCHOTTKY 40V 100MA 0603

Package: 0603 (1608 Metric)

Stock4,144
SR109 B0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 9

Package: DO-204AL, DO-41, Axial

Stock5,440
CDBU0145
Comchip Technology

DIODE SCHOTTKY 45V 100MA 0603

Package: 2-SMD, No Lead

Stock5,520
BAV101 L1G
TSC America Inc.

DIODE, SWITCHING & ARRAY, 0.2A,

Package: DO-213AC, MINI-MELF, SOD-80

Stock6,080
JANS1N5419-TR
Microchip Technology

DIODE GEN PURP 500V 3A B AXIAL

Package: -

Request a Quote
HS2DAL
Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 2A THIN SMA

Package: -

Stock21,000
S8JL-TP
Micro Commercial Co

Interface

Package: -

Request a Quote
SS23MH
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 30V 2A MICRO SMA

Package: -

Stock75,885

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SF10BG-B	Diodes Incorporated	DIODE GEN PURP 100V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: 75pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-204AL, DO-41, Axial	Stock3,040	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	75pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
JANTX1N6626U	Microsemi Corporation	DIODE GEN PURP 200V 1.75A A-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1.75A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 2µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C	Package: SQ-MELF, A	Stock5,920	200V	1.75A	1.35V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	2µA @ 200V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 150°C
GP10QHE3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 5µA @ 1200V Capacitance @ Vr, F: 7pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-204AL, DO-41, Axial	Stock3,280	1200V	1A	1.2V @ 1A	Standard Recovery >500ns, > 200mA (Io)	3µs	5µA @ 1200V	7pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 150°C
JANS1N3595-1	Microsemi Corporation	DIODE GEN PURP 125V 200MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 125V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 1nA @ 125V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AH, DO-35, Axial	Stock4,512	125V	200mA (DC)	1V @ 200mA	Small Signal =< 200mA (Io), Any Speed	3µs	1nA @ 125V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
1N6076US	Microsemi Corporation	DIODE GEN PURP 50V 6A D5B Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.76V @ 18.8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, E Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 155°C	Package: SQ-MELF, E	Stock6,640	50V	6A	1.76V @ 18.8A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 50V	-	Surface Mount	SQ-MELF, E	D-5B	-65°C ~ 155°C
MS109/TR12	Microsemi Corporation	DIODE SCHOTTKY 90V 1A DO204AL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 810mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 90V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-204AL, DO-41, Axial	Stock5,936	90V	1A	810mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 175°C
FESB16AT-E3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 16A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 975mV @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: 175pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 150°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,624	50V	16A	975mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	175pF @ 4V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 150°C
BYW172G-TAP	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 400V 3A SOD64 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 1µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: SOD-64, Axial Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C	Package: SOD-64, Axial	Stock6,080	400V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	1µA @ 400V	-	Through Hole	SOD-64, Axial	SOD-64	-55°C ~ 175°C
V10P45S-M3/86A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 45V 4.4A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 4.4A (DC) Voltage - Forward (Vf) (Max) @ If: 570mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 800µA @ 45V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-277, 3-PowerDFN	Stock267,600	45V	4.4A (DC)	570mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	800µA @ 45V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 150°C
6A100G B0G	TSC America Inc.	DIODE, 6A, 1000V, R-6 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1V @ 6A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 1000V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: R6, Axial Supplier Device Package: R-6 Operating Temperature - Junction: -55°C ~ 150°C	Package: R6, Axial	Stock3,696	-	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 1000V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
EH 1V	Sanken	DIODE GEN PURP 400V 600MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 600mA Voltage - Forward (Vf) (Max) @ If: 1.35V @ 600mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4µs Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	Package: Axial	Stock2,480	400V	600mA	1.35V @ 600mA	Standard Recovery >500ns, > 200mA (Io)	4µs	10µA @ 400V	-	Through Hole	Axial	-	-40°C ~ 150°C
SB2G-M3/5BT	Vishay Semiconductor Diodes Division	DIODE RECT 2A 400V DO-214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 1µA @ 400V Capacitance @ Vr, F: 16pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AA, SMB	Stock3,424	400V	2A	1.15V @ 2A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 400V	16pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
CD0603-B0140L	Bourns Inc.	DIODE SCHOTTKY 40V 100MA 0603 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 550mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30µA @ 10V Capacitance @ Vr, F: 9pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: 0603 (1608 Metric) Supplier Device Package: 0603 Operating Temperature - Junction: -40°C ~ 125°C	Package: 0603 (1608 Metric)	Stock4,144	40V	100mA	550mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	30µA @ 10V	9pF @ 10V, 1MHz	Surface Mount	0603 (1608 Metric)	0603	-40°C ~ 125°C
SR109 B0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 9 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 850mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 90V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-204AL, DO-41, Axial	Stock5,440	90V	1A	850mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
CDBU0145	Comchip Technology	DIODE SCHOTTKY 45V 100MA 0603 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 550mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 10V Capacitance @ Vr, F: 9pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: 0603C/SOD-523F Operating Temperature - Junction: 125°C (Max)	Package: 2-SMD, No Lead	Stock5,520	45V	100mA	550mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	1µA @ 10V	9pF @ 10V, 1MHz	Surface Mount	2-SMD, No Lead	0603C/SOD-523F	125°C (Max)
BAV101 L1G	TSC America Inc.	DIODE, SWITCHING & ARRAY, 0.2A, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 250V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100nA @ 200V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: Mini MELF Operating Temperature - Junction: -65°C ~ 200°C	Package: DO-213AC, MINI-MELF, SOD-80	Stock6,080	250V	200mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	100nA @ 200V	4pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	Mini MELF	-65°C ~ 200°C
JANS1N5419-TR	Microchip Technology	DIODE GEN PURP 500V 3A B AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	500 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	-	-	Through Hole	B, Axial	B, Axial	-65°C ~ 175°C
HS2DAL	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 2A THIN SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: 32pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock21,000	200 V	2A	1 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	1 µA @ 200 V	32pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	Thin SMA	-55°C ~ 150°C
S8JL-TP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 150pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	600 V	8A	1.1 V @ 8 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 600 V	150pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-55°C ~ 150°C
SS23MH	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 2A MICRO SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150 µA @ 30 V Capacitance @ Vr, F: 35pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: Micro SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock75,885	30 V	2A	600 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	150 µA @ 30 V	35pF @ 4V, 1MHz	Surface Mount	2-SMD, Flat Lead	Micro SMA	-55°C ~ 150°C
UF1006_T0_00001	Panjit International Inc.	DIODE GEN PURP 600V 10A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock6,000	600 V	10A	1.7 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	1 µA @ 600 V	50pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
FR604-TP	Micro Commercial Co	DIODE GEN PURP 400V 6A R-6 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: 150pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: R-6, Axial Supplier Device Package: R-6 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	400 V	6A	1.3 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	10 µA @ 400 V	150pF @ 4V, 1MHz	Through Hole	R-6, Axial	R-6	-55°C ~ 150°C
SL24UPL-TP	Micro Commercial Co	DIODE SCHOTTKY 2A 40V SOD-123FL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 420 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	40 V	2A	420 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	300 µA @ 40 V	-	Surface Mount	SOD-123F	SOD-123FL	-55°C ~ 150°C
V6PW12HM3-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 120V 6A SLIMDPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 820 mV @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400 µA @ 120 V Capacitance @ Vr, F: 510pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: SlimDPAK Operating Temperature - Junction: -40°C ~ 150°C	Package: -	Request a Quote	120 V	6A	820 mV @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	-	400 µA @ 120 V	510pF @ 4V, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	SlimDPAK	-40°C ~ 150°C
MBRD3200	SMC Diode Solutions	DIODE SCHOTTKY 200V 3A DPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 920 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 200 V Capacitance @ Vr, F: 100pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	200 V	3A	920 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 200 V	100pF @ 5V, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	DPAK	-55°C ~ 150°C
S21130	Microchip Technology	STD RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
PMEG030V050EPEZ	Nexperia USA Inc.	DIODE SCHOTTKY 30V 5A CFP15B Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 16 ns Current - Reverse Leakage @ Vr: 150 µA @ 30 V Capacitance @ Vr, F: 470pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: CFP15B Operating Temperature - Junction: 175°C	Package: -	Stock14,205	30 V	5A	500 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	16 ns	150 µA @ 30 V	470pF @ 1V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	CFP15B	175°C
RFUH20NS3STL	Rohm Semiconductor	DIODE GEN PURP 350V 20A LPDS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 350 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 10 µA @ 350 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: LPDS Operating Temperature - Junction: 150°C	Package: -	Stock4,407	350 V	20A	1.5 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	10 µA @ 350 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	LPDS	150°C