Page 870 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

1N4245GP-M3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURPOSE DO-204AL

Package: -

Stock5,264
MBR7H35HE3/45
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 7.5A TO220AC

Package: TO-220-2

Stock5,280
BAY71_T50R
Fairchild/ON Semiconductor

DIODE GEN PURP 50V 200MA DO35

Package: DO-204AH, DO-35, Axial

Stock3,920
R6220255ESOO
Powerex Inc.

DIODE MODULE 200V 550A DO200AA

Package: DO-200AA, A-PUK

Stock6,560
SD51R
GeneSiC Semiconductor

DIODE SCHOTTKY REV 45V DO5

Package: DO-203AB, DO-5, Stud

Stock3,504
FR70D02
GeneSiC Semiconductor

DIODE GEN PURP 200V 70A DO5

Package: DO-203AB, DO-5, Stud

Stock7,552
SF41G A0G
TSC America Inc.

DIODE, SUPER FAST, 4A, 50V, 35NS

Package: DO-201AD, Axial

Stock3,392
RH 1AV
Sanken

DIODE GEN PURP 600V 600MA AXIAL

Package: Axial

Stock7,072
ES2DHR5G
TSC America Inc.

DIODE, SUPER FAST, 2A, 200V, 35N

Package: DO-214AA, SMB

Stock7,680
CDBFR0240
Comchip Technology

DIODE SCHOTTKY 40V 200MA 1005

Package: 1005 (2512 Metric)

Stock3,584
S1BLHRHG
TSC America Inc.

DIODE, 1A, 100V, AEC-Q101, SUB S

Package: DO-219AB

Stock4,672
VS-1N1188
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 35A DO203AB

Package: DO-203AB, DO-5, Stud

Stock5,472
MCL103A-TR
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 200MA MICMELF

Package: 2-SMD, No Lead

Stock94,560
US1K-13-F
Diodes Incorporated

DIODE GEN PURP 800V 1A SMA

Package: DO-214AC, SMA

Stock205,920
BAS21THVL
Nexperia USA Inc.

DIODE GP 200V 200MA TO236AB

Package: -

Stock29,796
ES1GP_HF
Diodes Incorporated

MODULE

Package: -

Request a Quote
D850N36TXPSA1
Infineon Technologies

DIODE GEN PURP 3.6KV 850A

Package: -

Request a Quote
EC30QSA065
KYOCERA AVX

DIODE SCHOTTKY 65V 3A DO214AC

Package: -

Request a Quote
SS2PH10HM3_A-I
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 100V 2A DO220AA

Package: -

Request a Quote
S3DBF
Diodes Incorporated

DIODE GEN PURP 200V 3A SMB

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
1N4245GP-M3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURPOSE DO-204AL Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Stock5,264	-	-	-	-	-	-	-	-	-	-	-
MBR7H35HE3/45	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 35V 7.5A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 7.5A Voltage - Forward (Vf) (Max) @ If: 630mV @ 7.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 35V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C	Package: TO-220-2	Stock5,280	35V	7.5A	630mV @ 7.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 35V	-	Through Hole	TO-220-2	TO-220AC	-65°C ~ 175°C
BAY71_T50R	Fairchild/ON Semiconductor	DIODE GEN PURP 50V 200MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 20mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 35V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max)	Package: DO-204AH, DO-35, Axial	Stock3,920	50V	200mA	1V @ 20mA	Small Signal =< 200mA (Io), Any Speed	4ns	100nA @ 35V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
R6220255ESOO	Powerex Inc.	DIODE MODULE 200V 550A DO200AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 550A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 800A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 50mA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AA, A-PUK Supplier Device Package: DO-200AA, R62 Operating Temperature - Junction: -	Package: DO-200AA, A-PUK	Stock6,560	200V	550A	1.5V @ 800A	Standard Recovery >500ns, > 200mA (Io)	2µs	50mA @ 200V	-	Chassis Mount	DO-200AA, A-PUK	DO-200AA, R62	-
SD51R	GeneSiC Semiconductor	DIODE SCHOTTKY REV 45V DO5 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 660mV @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 45V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-203AB, DO-5, Stud	Stock3,504	45V	60A	660mV @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 45V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 150°C
FR70D02	GeneSiC Semiconductor	DIODE GEN PURP 200V 70A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 70A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 25µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -40°C ~ 125°C	Package: DO-203AB, DO-5, Stud	Stock7,552	200V	70A	1.4V @ 70A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	25µA @ 100V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-40°C ~ 125°C
SF41G A0G	TSC America Inc.	DIODE, SUPER FAST, 4A, 50V, 35NS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-201AD, Axial	Stock3,392	50V	4A	1V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
RH 1AV	Sanken	DIODE GEN PURP 600V 600MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 600mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 600mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4µs Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	Package: Axial	Stock7,072	600V	600mA	1.3V @ 600mA	Standard Recovery >500ns, > 200mA (Io)	4µs	5µA @ 600V	-	Through Hole	Axial	-	-40°C ~ 150°C
ES2DHR5G	TSC America Inc.	DIODE, SUPER FAST, 2A, 200V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AA, SMB	Stock7,680	200V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	25pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
CDBFR0240	Comchip Technology	DIODE SCHOTTKY 40V 200MA 1005 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 550mV @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 30V Capacitance @ Vr, F: 9pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: 1005 (2512 Metric) Supplier Device Package: 1005/SOD-323F Operating Temperature - Junction: 125°C (Max)	Package: 1005 (2512 Metric)	Stock3,584	40V	200mA	550mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	10µA @ 30V	9pF @ 10V, 1MHz	Surface Mount	1005 (2512 Metric)	1005/SOD-323F	125°C (Max)
S1BLHRHG	TSC America Inc.	DIODE, 1A, 100V, AEC-Q101, SUB S Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-219AB	Stock4,672	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 100V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
VS-1N1188	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 35A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 110A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10mA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -65°C ~ 190°C	Package: DO-203AB, DO-5, Stud	Stock5,472	400V	35A	1.7V @ 110A	Standard Recovery >500ns, > 200mA (Io)	-	10mA @ 400V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-65°C ~ 190°C
MCL103A-TR	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 200MA MICMELF Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 10ns Current - Reverse Leakage @ Vr: 5µA @ 10V Capacitance @ Vr, F: 50pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: MicroMELF Operating Temperature - Junction: 125°C (Max)	Package: 2-SMD, No Lead	Stock94,560	40V	200mA	600mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	10ns	5µA @ 10V	50pF @ 0V, 1MHz	Surface Mount	2-SMD, No Lead	MicroMELF	125°C (Max)
US1K-13-F	Diodes Incorporated	DIODE GEN PURP 800V 1A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-214AC, SMA	Stock205,920	800V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-65°C ~ 150°C
BAS21THVL	Nexperia USA Inc.	DIODE GP 200V 200MA TO236AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 100 nA @ 200 V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB Operating Temperature - Junction: 175°C (Max)	Package: -	Stock29,796	200 V	200mA	1.25 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	50 ns	100 nA @ 200 V	5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB	175°C (Max)
ES1GP_HF	Diodes Incorporated	MODULE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	400 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 400 V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC	-55°C ~ 150°C
D850N36TXPSA1	Infineon Technologies	DIODE GEN PURP 3.6KV 850A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 3600 V Current - Average Rectified (Io): 850A Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 850 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 mA @ 3600 V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AB, B-PUK Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 160°C	Package: -	Request a Quote	3600 V	850A	1.28 V @ 850 A	Standard Recovery >500ns, > 200mA (Io)	-	50 mA @ 3600 V	-	Clamp On	DO-200AB, B-PUK	-	-40°C ~ 160°C
EC30QSA065	KYOCERA AVX	DIODE SCHOTTKY 65V 3A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 65 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 610 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300 µA @ 65 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -40°C ~ 150°C	Package: -	Request a Quote	65 V	3A	610 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	300 µA @ 65 V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-40°C ~ 150°C
SS2PH10HM3_A-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 100V 2A DO220AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 100 V Capacitance @ Vr, F: 65pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Request a Quote	100 V	2A	800 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 µA @ 100 V	65pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 175°C
S3DBF	Diodes Incorporated	DIODE GEN PURP 200V 3A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	200 V	3A	1.15 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 200 V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 150°C
SBA240AH_R1_00001	Panjit International Inc.	DIODE SCHOTTKY 40V 2A SOD123HE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock8,910	40 V	2A	530 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
JAN1N6857UR-1	Microchip Technology	DIODE SCHOTTKY 16V 150MA DO213AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 16 V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 750 mV @ 35 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150 nA @ 16 V Capacitance @ Vr, F: 4.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	16 V	150mA	750 mV @ 35 mA	Small Signal =< 200mA (Io), Any Speed	-	150 nA @ 16 V	4.5pF @ 0V, 1MHz	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 150°C
SS34LWH	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 3A SOD123W Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 125°C	Package: -	Stock82,893	40 V	3A	550 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 40 V	-	Surface Mount	SOD-123W	SOD-123W	-55°C ~ 125°C
BYM12-200HE3_A-I	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 200V 1A DO213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	200 V	1A	1 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 200 V	20pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
JANTXV1N6638US-TR	Microchip Technology	DIODE GP 125V 300MA B SQ-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 125 V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4.5 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	125 V	300mA	1.1 V @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	4.5 ns	-	-	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C
S2505PF	Microchip Technology	STD RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
1N2133RA	Solid State Inc.	DIODE GEN PURP REV 300V 70A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25 µA @ 300 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C	Package: -	Request a Quote	300 V	70A	1.25 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	25 µA @ 300 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 200°C
FESB16DT-M3-I	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 200V 16A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: 175pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	200 V	16A	975 mV @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 200 V	175pF @ 4V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-65°C ~ 150°C