Page 874 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

MA3X70300L
Panasonic Electronic Components

DIODE SCHOTTKY 20V 500MA MINI3

Package: TO-236-3, SC-59, SOT-23-3

Stock2,224
SFF1602GHC0G
TSC America Inc.

DIODE, SUPER FAST, 16A, 100V, 35

Package: TO-220-3 Full Pack, Isolated Tab

Stock4,656
MS105E3/TR12
Microsemi Corporation

DIODE SCHOTTKY 50V 1A DO204AL

Package: DO-204AL, DO-41, Axial

Stock2,544
AS4PJHM3_A/I
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 2.4A TO277A

Package: TO-277, 3-PowerDFN

Stock6,512
V10WM100-M3/I
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 10A 100V DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,144
MBRS16150 MNG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 16A,

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,584
AS4PK-M3/86A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 800V 2.4A TO277A

Package: TO-277, 3-PowerDFN

Stock4,336
VS-6ESH06-M3/87A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 6A TO277A

Package: TO-277, 3-PowerDFN

Stock7,184
F1T7G R0G
TSC America Inc.

DIODE, FAST, 1A, 1000V, 500NS, T

Package: T-18, Axial

Stock6,000
SS13LHMQG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 3

Package: DO-219AB

Stock7,200
FR2ATA
SMC Diode Solutions

DIODE GEN PURP 50V 2A SMB

Package: DO-214AA, SMB

Stock5,584
STTH810DI
STMicroelectronics

DIODE GEN PURP 1KV 8A TO220AB

Package: TO-220-3

Stock20,460
LQA03TC600
Power Integrations

DIODE SCHOTTKY 600V 3A TO220AC

Package: TO-220-2

Stock62,088
UPS5100E3/TR13
Microsemi Corporation

DIODE SCHOTTKY 100V 5A POWERMITE

Package: Powermite?3

Stock50,052
JANS1N6873UTK2AS
Microchip Technology

DIODE GEN PURP 400MA THINKEY2

Package: -

Request a Quote
1F6
SMC Diode Solutions

DIODE GEN PURP 800V 1A R-1

Package: -

Request a Quote
IDWD60E120D7XKSA1
Infineon Technologies

INDUSTRY 14

Package: -

Stock720
UFR7005R
Microchip Technology

DIODE GEN PURP REV 50V 70A DO5

Package: -

Request a Quote
B0530WS
EVVO

30V, 0.5A, SCHOTTKY DI, SOD-323F

Package: -

Stock9,000
CDBQC0140R-HF
Comchip Technology

DIODE SCHOTTKY 40V 100MA 0402C

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
MA3X70300L	Panasonic Electronic Components	DIODE SCHOTTKY 20V 500MA MINI3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 550mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 10µA @ 10V Capacitance @ Vr, F: 60pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: Mini3-G1 Operating Temperature - Junction: 125°C (Max)	Package: TO-236-3, SC-59, SOT-23-3	Stock2,224	20V	500mA	550mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	5ns	10µA @ 10V	60pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	Mini3-G1	125°C (Max)
SFF1602GHC0G	TSC America Inc.	DIODE, SUPER FAST, 16A, 100V, 35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 975mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: ITO-220AB Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-220-3 Full Pack, Isolated Tab	Stock4,656	100V	16A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	80pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
MS105E3/TR12	Microsemi Corporation	DIODE SCHOTTKY 50V 1A DO204AL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 690mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-204AL, DO-41, Axial	Stock2,544	50V	1A	690mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 50V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 175°C
AS4PJHM3_A/I	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 600V 2.4A TO277A Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 2.4A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-277, 3-PowerDFN	Stock6,512	600V	2.4A	1.1V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	1.8µs	10µA @ 600V	60pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
V10WM100-M3/I	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 10A 100V DPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 750mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 700µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252, (D-Pak) Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,144	100V	10A	750mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	700µA @ 100V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252, (D-Pak)	-40°C ~ 150°C
MBRS16150 MNG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 16A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 950mV @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 150V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,584	150V	16A	950mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-55°C ~ 150°C
AS4PK-M3/86A	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 800V 2.4A TO277A Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 2.4A (DC) Voltage - Forward (Vf) (Max) @ If: 962mV @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 10µA @ 800V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-277, 3-PowerDFN	Stock4,336	800V	2.4A (DC)	962mV @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	10µA @ 800V	60pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
VS-6ESH06-M3/87A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 6A TO277A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -65°C ~ 175°C	Package: TO-277, 3-PowerDFN	Stock7,184	600V	6A	1.8V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	5µA @ 600V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-65°C ~ 175°C
F1T7G R0G	TSC America Inc.	DIODE, FAST, 1A, 1000V, 500NS, T Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	Package: T-18, Axial	Stock6,000	-	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SS13LHMQG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 125°C	Package: DO-219AB	Stock7,200	30V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
FR2ATA	SMC Diode Solutions	DIODE GEN PURP 50V 2A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB (DO-214AA) Operating Temperature - Junction: -50°C ~ 150°C	Package: DO-214AA, SMB	Stock5,584	50V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	50pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB (DO-214AA)	-50°C ~ 150°C
STTH810DI	STMicroelectronics	DIODE GEN PURP 1KV 8A TO220AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 2V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220Ins Operating Temperature - Junction: 175°C (Max)	Package: TO-220-3	Stock20,460	1000V	8A	2V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	85ns	5µA @ 1000V	-	Through Hole	TO-220-3	TO-220Ins	175°C (Max)
LQA03TC600	Power Integrations	DIODE SCHOTTKY 600V 3A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 3.1V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 13ns Current - Reverse Leakage @ Vr: 20µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: 150°C (Max)	Package: TO-220-2	Stock62,088	600V	3A	3.1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	13ns	20µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	150°C (Max)
UPS5100E3/TR13	Microsemi Corporation	DIODE SCHOTTKY 100V 5A POWERMITE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 810mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 100V Capacitance @ Vr, F: 150pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: Powermite?3 Supplier Device Package: Powermite 3 Operating Temperature - Junction: -55°C ~ 125°C	Package: Powermite?3	Stock50,052	100V	5A	810mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 100V	150pF @ 4V, 1MHz	Surface Mount	Powermite?3	Powermite 3	-55°C ~ 125°C
JANS1N6873UTK2AS	Microchip Technology	DIODE GEN PURP 400MA THINKEY2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 400mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: ThinKey™2 Supplier Device Package: ThinKey™2 Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	-	400mA	1 V @ 400 mA	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Surface Mount	ThinKey™2	ThinKey™2	-65°C ~ 175°C
1F6	SMC Diode Solutions	DIODE GEN PURP 800V 1A R-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: R-1, Axial Supplier Device Package: R-1 Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	800 V	1A	1.3 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	500 ns	5 µA @ 800 V	15pF @ 4V, 1MHz	Through Hole	R-1, Axial	R-1	-65°C ~ 150°C
IDWD60E120D7XKSA1	Infineon Technologies	INDUSTRY 14 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Stock720	-	-	-	-	-	-	-	-	-	-	-
UFR7005R	Microchip Technology	DIODE GEN PURP REV 50V 70A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 975 mV @ 70 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 25 µA @ 50 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -	Package: -	Request a Quote	50 V	70A	975 mV @ 70 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	25 µA @ 50 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5 (DO-203AB)	-
B0530WS	EVVO	30V, 0.5A, SCHOTTKY DI, SOD-323F Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 450 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 125°C	Package: -	Stock9,000	30 V	500mA	450 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 30 V	-	Surface Mount	SC-76, SOD-323	SOD-323	-55°C ~ 125°C
CDBQC0140R-HF	Comchip Technology	DIODE SCHOTTKY 40V 100MA 0402C Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 10 V Capacitance @ Vr, F: 6pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: 0402 (1006 Metric) Supplier Device Package: 0402C/SOD-923F Operating Temperature - Junction: -40°C ~ 125°C	Package: -	Request a Quote	40 V	100mA	450 mV @ 10 mA	Small Signal =< 200mA (Io), Any Speed	-	1 µA @ 10 V	6pF @ 10V, 1MHz	Surface Mount	0402 (1006 Metric)	0402C/SOD-923F	-40°C ~ 125°C
S2DA	Diodes Incorporated	DIODE GEN PURP 200V 1.5A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	200 V	1.5A	1.15 V @ 1.5 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	5 µA @ 200 V	20pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-55°C ~ 150°C
UF104G_R2_00001	Panjit International Inc.	DIODE GEN PURP 400V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: 17pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	400 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	1 µA @ 400 V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
VS-TH180BL16P	Vishay General Semiconductor - Diodes Division	DIODE Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
JANTX1N5807US-TR	Microchip Technology	DIODE GEN PURP 50V 3A B SQ-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: 60pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	50 V	3A	875 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	5 µA @ 50 V	60pF @ 10V, 1MHz	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C
FSQS30A045	KYOCERA AVX	DIODE SCHOT 45V 30A TO220 FM Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 560 mV @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 45 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220-2 Full-Mold Operating Temperature - Junction: -40°C ~ 150°C	Package: -	Request a Quote	45 V	30A	560 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 45 V	-	Through Hole	TO-220-2 Full Pack	TO-220-2 Full-Mold	-40°C ~ 150°C
BAS70-00-HE3_A-18	Vishay	DIODE SCHOTTKY 70V 200MA SOT23-3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 70 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Current - Reverse Leakage @ Vr: 100 nA @ 30 V Capacitance @ Vr, F: 2pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 125°C (Max)	Package: -	Request a Quote	70 V	200mA	1 V @ 50 mA	Small Signal =< 200mA (Io), Any Speed	5 ns	100 nA @ 30 V	2pF @ 1V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3	125°C (Max)
V6PWM12-M3-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 120V 6A SLIMDPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 830 mV @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 120 V Capacitance @ Vr, F: 530pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: SlimDPAK Operating Temperature - Junction: -40°C ~ 175°C	Package: -	Request a Quote	120 V	6A	830 mV @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 120 V	530pF @ 4V, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	SlimDPAK	-40°C ~ 175°C
JANS1N5416-TR	Microchip Technology	DIODE GEN PURP 100V 3A B AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	100 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	-	-	Through Hole	B, Axial	B, Axial	-65°C ~ 175°C