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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 3.5KV 250MA DO204
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 3500V
- Current - Average Rectified (Io): 250mA
- Voltage - Forward (Vf) (Max) @ If: 3V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2µs
- Current - Reverse Leakage @ Vr: 5µA @ 3500V
- Capacitance @ Vr, F: 3pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AL, DO-41, Axial |
Stock3,984 |
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3500V | 250mA | 3V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 3500V | 3pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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WeEn Semiconductors |
DIODE GEN PURP 600V 4A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 1.05V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75ns
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: 175°C (Max)
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Package: DO-201AD, Axial |
Stock6,784 |
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600V | 4A | 1.05V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | - | Through Hole | DO-201AD, Axial | DO-201AD | 175°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 8A DPAK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50µA @ 800V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: D-PAK (TO-252AA)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock13,404 |
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800V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 800V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -55°C ~ 150°C |
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Semtech Corporation |
DIODE GEN PURP 600V 15A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2000ns
- Current - Reverse Leakage @ Vr: 1µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock2,688 |
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600V | 15A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2000ns | 1µA @ 600V | - | - | - | - | -55°C ~ 175°C |
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Powerex Inc. |
DIODE GEN PURP 100V 100A DO205AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 100A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 24mA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-205AA, DO-8, Stud
- Supplier Device Package: DO-205AA (DO-8)
- Operating Temperature - Junction: -40°C ~ 200°C
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Package: DO-205AA, DO-8, Stud |
Stock4,224 |
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100V | 100A | 1.5V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 24mA @ 100V | - | Chassis, Stud Mount | DO-205AA, DO-8, Stud | DO-205AA (DO-8) | -40°C ~ 200°C |
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Microsemi Corporation |
DIODE SCHOTTKY 90V 3A DO214AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 90V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 810mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 90V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: DO-214AB, SMC |
Stock3,360 |
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90V | 3A | 810mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 8A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 975mV @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 5µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: TO-220-2 |
Stock3,552 |
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50V | 8A | 975mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 50V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 12A,
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 550mV @ 12A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 30V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -50°C ~ 150°C
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Package: DO-201AD, Axial |
Stock4,464 |
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30V | 12A | 550mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Through Hole | DO-201AD, Axial | DO-201AD | -50°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 600V 6A DPAK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 3V @ 6A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 30µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock4,896 |
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600V | 6A | 3V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 30µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -65°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 30V 1A 2DSN
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 1A (DC)
- Voltage - Forward (Vf) (Max) @ If: 470mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 30V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: 2-XDFN
- Supplier Device Package: 2-DSN (1.4x0.6)
- Operating Temperature - Junction: 150°C (Max)
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Package: 2-XDFN |
Stock3,544,200 |
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30V | 1A (DC) | 470mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 30V | - | Surface Mount | 2-XDFN | 2-DSN (1.4x0.6) | 150°C (Max) |
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TSC America Inc. |
DIODE, SUPER FAST, 1A, 150V, 35N
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 5µA @ 150V
- Capacitance @ Vr, F: 10pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-219AB |
Stock3,152 |
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150V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 150V | 10pF @ 1V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 1A, 5
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: T-18, Axial
- Supplier Device Package: TS-1
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: T-18, Axial |
Stock3,472 |
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50V | 1A | 700mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
RECT SCHKY 35A 100V SLIMDPAK
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 35A
- Voltage - Forward (Vf) (Max) @ If: 900mV @ 35A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 800µA @ 100V
- Capacitance @ Vr, F: 2500pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: SlimDPAK
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,360 |
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100V | 35A | 900mV @ 35A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800µA @ 100V | 2500pF @ 4V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SlimDPAK | -40°C ~ 175°C |
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Rohm Semiconductor |
DIODE GEN PURP 400V 1A PMDU
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 700mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: PMDU
- Operating Temperature - Junction: 150°C (Max)
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Package: SOD-123F |
Stock360,000 |
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400V | 1A | 1.1V @ 700mA | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | - | Surface Mount | SOD-123F | PMDU | 150°C (Max) |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 100V 200MA SOT23
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 5µA @ 75V
- Capacitance @ Vr, F: 4pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
- Operating Temperature - Junction: 150°C (Max)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock6,992 |
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100V | 200mA | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | 4pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 150°C (Max) |
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Micro Commercial Co |
DIODE GEN PURP 50V 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-201AD, Axial |
Stock109,506 |
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50V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 50V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE SCHOTTKY 200V POWERDI123
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 850mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2µA @ 200V
- Capacitance @ Vr, F: 23pF @ 5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: POWERDI?123
- Supplier Device Package: PowerDI? 123
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: POWERDI?123 |
Stock3,664 |
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200V | 1A | 850mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2µA @ 200V | 23pF @ 5V, 1MHz | Surface Mount | POWERDI?123 | PowerDI? 123 | -65°C ~ 175°C |
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Microchip Technology |
DIODE POWER SCHOTTKY
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Micro Commercial Co |
Interface
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 60 µA @ 1200 V
- Capacitance @ Vr, F: 2259pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AD
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Request a Quote |
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1200 V | 30A | 1.7 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 1200 V | 2259pF @ 0V, 1MHz | Through Hole | TO-247-2 | TO-247AD | -55°C ~ 175°C |
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Microchip Technology |
RECTIFIER
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 1600 V
- Current - Average Rectified (Io): 22A
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4 (DO-203AA)
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: - |
Request a Quote |
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1600 V | 22A | 1.2 V @ 30 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1600 V | - | Stud Mount | DO-203AA, DO-4, Stud | DO-4 (DO-203AA) | -65°C ~ 200°C |
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Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 600V 30A TO263AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 30 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D2PAK)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Stock17,559 |
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600 V | 30A | 2.6 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 50 µA @ 600 V | - | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263AB (D2PAK) | -65°C ~ 175°C |
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Central Semiconductor Corp |
DIODE GEN PURP 100V 5A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 5 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 100 V
- Capacitance @ Vr, F: 50pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 150°C
|
Package: - |
Request a Quote |
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100 V | 5A | 1.2 V @ 5 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 100 V | 50pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
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Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 1.2KV 65A TO247AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 65A
- Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 65 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-247AD (TO-3P)
- Operating Temperature - Junction: -40°C ~ 150°C
|
Package: - |
Request a Quote |
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1200 V | 65A | 1.12 V @ 65 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 µA @ 1200 V | - | Through Hole | TO-3P-3, SC-65-3 | TO-247AD (TO-3P) | -40°C ~ 150°C |
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Micro Commercial Co |
DIODE GEN PURP 400V 1A DO41
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 400 V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-41
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
400 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 400 V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -55°C ~ 150°C |
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Comchip Technology |
DIODE SCHOTTKY 40V 5A DO214AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 mA @ 40 V
- Capacitance @ Vr, F: 600pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
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40 V | 5A | 550 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 40 V | 600pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Microchip Technology |
DIODE GEN PURP 100V 2A A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: A, Axial
- Supplier Device Package: A, Axial
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Request a Quote |
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100 V | 2A | 1 V @ 400 mA | Standard Recovery >500ns, > 200mA (Io) | - | 2 µA @ 100 V | - | Through Hole | A, Axial | A, Axial | -65°C ~ 175°C |
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Microchip Technology |
DIODE GEN PURP 400V 1A D-5A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2 µs
- Current - Reverse Leakage @ Vr: 500 nA @ 400 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: D-5A
- Operating Temperature - Junction: -65°C ~ 200°C
|
Package: - |
Request a Quote |
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400 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 400 V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 200°C |
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Nexperia USA Inc. |
PMEG2010EA-Q/SOD323/SOD2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 15 V
- Capacitance @ Vr, F: 19pF @ 5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: SOD-323
- Operating Temperature - Junction: 125°C
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Package: - |
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20 V | 1A | 550 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 15 V | 19pF @ 5V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | 125°C |