Page 933 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

CLH05,LMBJQ(O
Toshiba Semiconductor and Storage

DIODE GEN PURP 200V 5A L-FLAT

Package: L-FLAT?

Stock2,832
VS-30BQ100GPBF
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 3.0A SMC

Package: DO-214AB, SMC

Stock270,000
VS-1N5820
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V 3A DO201AD

Package: DO-201AD, Axial

Stock4,448
RGP10J-M3/54
Vishay Semiconductor Diodes Division

DIODE SW 1A 600V 250NS DO204AL

Package: DO-204AL, DO-41, Axial

Stock7,136
1N4448
Microsemi Corporation

DIODE GEN PURP 75V 200MA DO35

Package: DO-204AH, DO-35, Axial

Stock897,000
UMA5819
Microsemi Corporation

DIODE SCHOTTKY 40V 1A ULTRAMITE

Package: Ultramite?

Stock2,064
50WQ06FNTR
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 5.5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock34,260
JANTXV1N5811US
Microsemi Corporation

DIODE GEN PURP 150V 3A B-MELF

Package: SQ-MELF, B

Stock4,176
FESB16JTHE3/81
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 16A TO263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,448
ES01FV0
Sanken

DIODE GEN PURP 1.5KV 500MA AXIAL

Package: Axial

Stock7,712
B260AE-13
Diodes Incorporated

SCHOTTKY RECTIFIER SMA

Package: DO-214AC, SMA

Stock2,000
HS1AL RQG
TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 50V,

Package: DO-219AB

Stock2,416
ACGRA4006-HF
Comchip Technology

DIODE GEN PURP 800V 1A DO214AC

Package: DO-214AC, SMA

Stock5,520
DA3J101A0L
Panasonic Electronic Components

DIODE GEN PURP 80V 100MA SMINI3

Package: SC-85

Stock49,254
SB07-03C-TB-E
ON Semiconductor

DIODE SCHOTTKY 30V 700MA 3CP

Package: TO-236-3, SC-59, SOT-23-3

Stock1,261,788
BA159-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A DO204AL

Package: DO-204AL, DO-41, Axial

Stock144,192
S4M-R7
Taiwan Semiconductor Corporation

DIODE GEN PURP 1KV 4A DO214AB

Package: -

Request a Quote
RFN2LAM4STFTR
Rohm Semiconductor

DIODE GEN PURP 400V 1.5A PMDTM

Package: -

Stock18,795
CD214A-B220R
Bourns Inc.

DIODE SCHOTTKY 20V 2A 2SMD

Package: -

Stock34,584
D6001N50TXPSA1
Infineon Technologies

DIODE GEN PURP 5KV 8010A

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
CLH05,LMBJQ(O	Toshiba Semiconductor and Storage	DIODE GEN PURP 200V 5A L-FLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 5A (DC) Voltage - Forward (Vf) (Max) @ If: 0.98V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: L-FLAT? Supplier Device Package: L-FLAT? (4x5.5) Operating Temperature - Junction: -40°C ~ 150°C	Package: L-FLAT?	Stock2,832	200V	5A (DC)	0.98V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	-	Surface Mount	L-FLAT?	L-FLAT? (4x5.5)	-40°C ~ 150°C
VS-30BQ100GPBF	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 3.0A SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 790mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: 115pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-214AB, SMC	Stock270,000	100V	3A	790mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	115pF @ 5V, 1MHz	Surface Mount	DO-214AB, SMC	SMC	-55°C ~ 175°C
VS-1N5820	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 20V 3A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 475mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 20V Capacitance @ Vr, F: 350pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-201AD, Axial	Stock4,448	20V	3A	475mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 20V	350pF @ 5V, 1MHz	Through Hole	DO-201AD, Axial	DO-204AL (DO-41)	-65°C ~ 150°C
RGP10J-M3/54	Vishay Semiconductor Diodes Division	DIODE SW 1A 600V 250NS DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AL, DO-41, Axial	Stock7,136	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
1N4448	Microsemi Corporation	DIODE GEN PURP 75V 200MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 25nA @ 20V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-204AH, DO-35, Axial	Stock897,000	75V	200mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	25nA @ 20V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 150°C
UMA5819	Microsemi Corporation	DIODE SCHOTTKY 40V 1A ULTRAMITE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Ultramite? Supplier Device Package: Ultramite? Operating Temperature - Junction: -50°C ~ 125°C	Package: Ultramite?	Stock2,064	40V	1A	600mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	Ultramite?	Ultramite?	-50°C ~ 125°C
50WQ06FNTR	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 5.5A DPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 5.5A Voltage - Forward (Vf) (Max) @ If: 570mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 60V Capacitance @ Vr, F: 360pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock34,260	60V	5.5A	570mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 60V	360pF @ 5V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-40°C ~ 150°C
JANTXV1N5811US	Microsemi Corporation	DIODE GEN PURP 150V 3A B-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 5µA @ 150V Capacitance @ Vr, F: 60pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C	Package: SQ-MELF, B	Stock4,176	150V	3A	875mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 150V	60pF @ 10V, 1MHz	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C
FESB16JTHE3/81	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 16A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: 145pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 150°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,448	600V	16A	1.5V @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 600V	145pF @ 4V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 150°C
ES01FV0	Sanken	DIODE GEN PURP 1.5KV 500MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1500V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 2V @ 500mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 10µA @ 1500V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	Package: Axial	Stock7,712	1500V	500mA	2V @ 500mA	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 1500V	-	Through Hole	Axial	-	-40°C ~ 150°C
B260AE-13	Diodes Incorporated	SCHOTTKY RECTIFIER SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 650mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 60V Capacitance @ Vr, F: 75pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AC, SMA	Stock2,000	60V	2A	650mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 60V	75pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-55°C ~ 150°C
HS1AL RQG	TSC America Inc.	DIODE, HIGH EFFICIENT, 1A, 50V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-219AB	Stock2,416	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ACGRA4006-HF	Comchip Technology	DIODE GEN PURP 800V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A (DC) Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AC, SMA	Stock5,520	800V	1A (DC)	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
DA3J101A0L	Panasonic Electronic Components	DIODE GEN PURP 80V 100MA SMINI3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 100mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3ns Current - Reverse Leakage @ Vr: 100nA @ 80V Capacitance @ Vr, F: 1.2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-85 Supplier Device Package: SMini3-F2-B Operating Temperature - Junction: 150°C (Max)	Package: SC-85	Stock49,254	80V	100mA (DC)	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	3ns	100nA @ 80V	1.2pF @ 0V, 1MHz	Surface Mount	SC-85	SMini3-F2-B	150°C (Max)
SB07-03C-TB-E	ON Semiconductor	DIODE SCHOTTKY 30V 700MA 3CP Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 700mA Voltage - Forward (Vf) (Max) @ If: 550mV @ 700mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10ns Current - Reverse Leakage @ Vr: 80µA @ 15V Capacitance @ Vr, F: 25pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: 3-CP Operating Temperature - Junction: -55°C ~ 125°C	Package: TO-236-3, SC-59, SOT-23-3	Stock1,261,788	30V	700mA	550mV @ 700mA	Fast Recovery =< 500ns, > 200mA (Io)	10ns	80µA @ 15V	25pF @ 10V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	3-CP	-55°C ~ 125°C
BA159-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 125°C	Package: DO-204AL, DO-41, Axial	Stock144,192	1000V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	12pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 125°C
S4M-R7	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 4A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 4 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	1000 V	4A	1.15 V @ 4 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	10 µA @ 1000 V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
RFN2LAM4STFTR	Rohm Semiconductor	DIODE GEN PURP 400V 1.5A PMDTM Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: PMDTM Operating Temperature - Junction: 150°C (Max)	Package: -	Stock18,795	400 V	1.5A	1.2 V @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	1 µA @ 400 V	-	Surface Mount	SOD-128	PMDTM	150°C (Max)
CD214A-B220R	Bourns Inc.	DIODE SCHOTTKY 20V 2A 2SMD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 20 V Capacitance @ Vr, F: 115pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: 2-SMD Operating Temperature - Junction: -55°C ~ 125°C	Package: -	Stock34,584	20 V	2A	500 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 20 V	115pF @ 4V, 1MHz	Surface Mount	2-SMD, No Lead	2-SMD	-55°C ~ 125°C
D6001N50TXPSA1	Infineon Technologies	DIODE GEN PURP 5KV 8010A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 5000 V Current - Average Rectified (Io): 8010A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6000 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400 mA @ 5000 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AE Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 160°C	Package: -	Request a Quote	5000 V	8010A	1.3 V @ 6000 A	Standard Recovery >500ns, > 200mA (Io)	-	400 mA @ 5000 V	-	Chassis Mount	DO-200AE	-	-40°C ~ 160°C
HS2GAH	Taiwan Semiconductor Corporation	50NS, 1.5A, 400V, HIGH EFFICIENT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock45,000	400 V	1.5A	1.3 V @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 400 V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RFUH20TJ6SGC9	Rohm Semiconductor	DIODE GP 600V 20A TO220ACFP Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 2.8 V @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220ACFP Operating Temperature - Junction: 150°C	Package: -	Stock2,526	600 V	20A	2.8 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	80 ns	10 µA @ 600 V	-	Through Hole	TO-220-2 Full Pack	TO-220ACFP	150°C
V2P22LHM3-H	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 200V 1.6A DO220AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1.6A Voltage - Forward (Vf) (Max) @ If: 760 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40 µA @ 200 V Capacitance @ Vr, F: 90pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -40°C ~ 175°C	Package: -	Stock113,478	200 V	1.6A	760 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	40 µA @ 200 V	90pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-40°C ~ 175°C
BAS16THR	Nexperia USA Inc.	DIODE GP 100V 215MA TO236AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 215mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 500 nA @ 80 V Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB Operating Temperature - Junction: 175°C (Max)	Package: -	Stock177	100 V	215mA	1.25 V @ 150 mA	Fast Recovery =< 500ns, > 200mA (Io)	4 ns	500 nA @ 80 V	1.5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB	175°C (Max)
EGP31G-E3-C	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 400V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 4 µA @ 400 V Capacitance @ Vr, F: 48pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	400 V	3A	1.25 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	4 µA @ 400 V	48pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 175°C
SK215A	SMC Diode Solutions	DIODE SCHOTTKY 150V 2A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 150 V Capacitance @ Vr, F: 240pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock16,809	150 V	2A	950 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 150 V	240pF @ 5V, 1MHz	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	-55°C ~ 150°C
R3705	Microchip Technology	STD RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
DD1200	Diotec Semiconductor	DIODE GEN PURP 12KV 20MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 12000 V Current - Average Rectified (Io): 20mA Voltage - Forward (Vf) (Max) @ If: 40 V @ 10 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 12 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: Axial Operating Temperature - Junction: -50°C ~ 150°C	Package: -	Request a Quote	12000 V	20mA	40 V @ 10 mA	Small Signal =< 200mA (Io), Any Speed	150 ns	5 µA @ 12 V	-	Through Hole	Axial	Axial	-50°C ~ 150°C