Page 981 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

1N4005
ON Semiconductor

DIODE GEN PURP 600V 1A DO41

Package: DO-204AL, DO-41, Axial

Stock23,076
LSM545J
Microsemi Corporation

DIODE SCHOTTKY 45V 5A DO214AB

Package: DO-214AB, SMC

Stock5,168
VS-SD1700C36K
Vishay Semiconductor Diodes Division

DIODE MODULE 3.6KV 2080A DO200AC

Package: DO-200AC, K-PUK

Stock7,008
DZ540N26K
Infineon Technologies Industrial Power and Controls Americas

RECTIFIER DIODE MOD 2000V 1150A

Package: -

Stock4,544
VS-25ETS08STRRPBF
Vishay Semiconductor Diodes Division

DIODE RECT 25A 800V D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,424
HSM1100GE3/TR13
Microsemi Corporation

DIODE SCHOTTKY 100V 1A DO215AA

Package: DO-215AA, SMB Gull Wing

Stock5,040
VS-ETU3006S-M3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 30A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,600
CPD24-CMR1F06M-CT20
Central Semiconductor Corp

DIODE GP 600V 1A 1=20PCS

Package: Die

Stock7,472
STTH506B-TR
STMicroelectronics

DIODE GEN PURP 600V 5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock38,568
SS5P10-M3/86A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 5A TO277A

Package: TO-277, 3-PowerDFN

Stock1,269,276
FRL1K
Diotec Semiconductor

IC

Package: -

Request a Quote
JANTX1N6844U3-TR
Microchip Technology

DIODE SCHOTTKY 100V 15A U3

Package: -

Request a Quote
NRVBA340NT3G
onsemi

DIODE SCHOTTKY 40V 3A SMA

Package: -

Request a Quote
RBLQ30NL10STL
Rohm Semiconductor

TRENCH MOS STRUCTURE, 100V, 30A,

Package: -

Request a Quote
RKR104BKH-P1
Renesas

DIODE SCHOTTKY 40V 1A TURP

Package: -

Request a Quote
DSC06065
Diodes Incorporated

DIODE SIL CARB 650V 6A TO220AC

Package: -

Request a Quote
SS13HM3_B-H
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 30V 1A DO214AC

Package: -

Request a Quote
CD6759
Microchip Technology

DIODE SCHOTTKY 60V 1A DIE

Package: -

Request a Quote
GC10MPS12-220
GeneSiC Semiconductor

DIODE SIL CARB 1.2KV 54A TO220-2

Package: -

Request a Quote
MBRS1060H
Taiwan Semiconductor Corporation

10A, 60V, SCHOTTKY RECTIFIER

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
1N4005	ON Semiconductor	DIODE GEN PURP 600V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AL, DO-41, Axial	Stock23,076	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 600V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 175°C
LSM545J	Microsemi Corporation	DIODE SCHOTTKY 45V 5A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 520mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 45V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AB, SMC	Stock5,168	45V	5A	520mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 45V	-	Surface Mount	DO-214AB, SMC	DO-214AB	-55°C ~ 150°C
VS-SD1700C36K	Vishay Semiconductor Diodes Division	DIODE MODULE 3.6KV 2080A DO200AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 3600V Current - Average Rectified (Io): 2080A Voltage - Forward (Vf) (Max) @ If: 1.81V @ 4000A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 75mA @ 3600V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AC, K-PUK Supplier Device Package: DO-200AC, K-PUK Operating Temperature - Junction: -	Package: DO-200AC, K-PUK	Stock7,008	3600V	2080A	1.81V @ 4000A	Standard Recovery >500ns, > 200mA (Io)	-	75mA @ 3600V	-	Clamp On	DO-200AC, K-PUK	DO-200AC, K-PUK	-
DZ540N26K	Infineon Technologies Industrial Power and Controls Americas	RECTIFIER DIODE MOD 2000V 1150A Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Stock4,544	-	-	-	-	-	-	-	-	-	-	-
VS-25ETS08STRRPBF	Vishay Semiconductor Diodes Division	DIODE RECT 25A 800V D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.14V @ 25A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 800V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,424	800V	25A	1.14V @ 25A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 800V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-40°C ~ 150°C
HSM1100GE3/TR13	Microsemi Corporation	DIODE SCHOTTKY 100V 1A DO215AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 840mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-215AA, SMB Gull Wing Supplier Device Package: DO-215AA Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-215AA, SMB Gull Wing	Stock5,040	100V	1A	840mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-215AA, SMB Gull Wing	DO-215AA	-55°C ~ 175°C
VS-ETU3006S-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 30A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 2V @ 70A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45ns Current - Reverse Leakage @ Vr: 30µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -65°C ~ 175°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,600	600V	30A	2V @ 70A	Fast Recovery =< 500ns, > 200mA (Io)	45ns	30µA @ 600V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-65°C ~ 175°C
CPD24-CMR1F06M-CT20	Central Semiconductor Corp	DIODE GP 600V 1A 1=20PCS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -65°C ~ 150°C	Package: Die	Stock7,472	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	-	Surface Mount	Die	Die	-65°C ~ 150°C
STTH506B-TR	STMicroelectronics	DIODE GEN PURP 600V 5A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.85V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak Operating Temperature - Junction: 175°C (Max)	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock38,568	600V	5A	1.85V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-Pak	175°C (Max)
SS5P10-M3/86A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 5A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 880mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 15µA @ 100V Capacitance @ Vr, F: 130pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-277, 3-PowerDFN	Stock1,269,276	100V	5A	880mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	15µA @ 100V	130pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C
FRL1K	Diotec Semiconductor	IC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -50°C ~ 150°C	Package: -	Request a Quote	800 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	5 µA @ 800 V	-	Surface Mount	SOD-123F	SOD-123FL	-50°C ~ 150°C
JANTX1N6844U3-TR	Microchip Technology	DIODE SCHOTTKY 100V 15A U3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 100 V Capacitance @ Vr, F: 600pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: U3 (SMD-0.5) Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	100 V	15A	900 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 100 V	600pF @ 5V, 1MHz	Surface Mount	3-SMD, No Lead	U3 (SMD-0.5)	-65°C ~ 150°C
NRVBA340NT3G	onsemi	DIODE SCHOTTKY 40V 3A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	40 V	3A	450 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	300 µA @ 40 V	-	Surface Mount	DO-214AC, SMA	SMA	-55°C ~ 150°C
RBLQ30NL10STL	Rohm Semiconductor	TRENCH MOS STRUCTURE, 100V, 30A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 860 mV @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263L Operating Temperature - Junction: 150°C	Package: -	Request a Quote	100 V	30A	860 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	150 µA @ 100 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263L	150°C
RKR104BKH-P1	Renesas	DIODE SCHOTTKY 40V 1A TURP Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 700 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 40 V Capacitance @ Vr, F: 35pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: TURP Operating Temperature - Junction: 150°C	Package: -	Request a Quote	40 V	1A	550 mV @ 700 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 40 V	35pF @ 10V, 1MHz	Surface Mount	2-SMD, Flat Lead	TURP	150°C
DSC06065	Diodes Incorporated	DIODE SIL CARB 650V 6A TO220AC Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 200 µA @ 650 V Capacitance @ Vr, F: 225pF @ 100mV, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO220AC (Type WX) Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Request a Quote	650 V	6A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	225pF @ 100mV, 1MHz	Through Hole	TO-220-2	TO220AC (Type WX)	-55°C ~ 175°C
SS13HM3_B-H	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 30V 1A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	30 V	1A	500 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 30 V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-65°C ~ 150°C
CD6759	Microchip Technology	DIODE SCHOTTKY 60V 1A DIE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -55°C ~ 125°C	Package: -	Request a Quote	60 V	1A	750 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 60 V	-	Surface Mount	Die	Die	-55°C ~ 125°C
GC10MPS12-220	GeneSiC Semiconductor	DIODE SIL CARB 1.2KV 54A TO220-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 54A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 10 µA @ 1200 V Capacitance @ Vr, F: 660pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Request a Quote	1200 V	54A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	10 µA @ 1200 V	660pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
MBRS1060H	Taiwan Semiconductor Corporation	10A, 60V, SCHOTTKY RECTIFIER Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Request a Quote	60 V	10A	800 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 60 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-55°C ~ 175°C
BAT54HMFHT116	Rohm Semiconductor	DIODE SCHOTTKY 30V 200MA SSD3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 2 µA @ 25 V Capacitance @ Vr, F: 12pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SSD3 Operating Temperature - Junction: 150°C (Max)	Package: -	Stock19,089	30 V	200mA	800 mV @ 100 mA	Small Signal =< 200mA (Io), Any Speed	50 ns	2 µA @ 25 V	12pF @ 1V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SSD3	150°C (Max)
BYWB29-100HE3_A-I	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 100V 8A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 10 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	100 V	8A	1.3 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	10 µA @ 100 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-65°C ~ 150°C
CSA2D-E3-H	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 200V 2A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.1 µs Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 11pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	200 V	2A	1.15 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	2.1 µs	5 µA @ 200 V	11pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SK510AHE3-LTP	Micro Commercial Co	DIODE SCHOTTKY 100V 5A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 100 V Capacitance @ Vr, F: 200pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock11,949	100 V	5A	850 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 100 V	200pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
HER602GP-AP	Micro Commercial Co	DIODE GEN PURP 100V 6A R-6 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 100 V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: R-6, Axial Supplier Device Package: R-6 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	100 V	6A	1.1 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 100 V	100pF @ 4V, 1MHz	Through Hole	R-6, Axial	R-6	-55°C ~ 150°C
ADS12B3-ASARH	Luminus Devices Inc.	DIODE 1200V-1A SMBF, AUTOMOTIVE Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 1 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 8 µA @ 1.2 kV Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-221AA, SMB Flat Leads Supplier Device Package: SMBF Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Request a Quote	1200 V	1A	1.35 V @ 1 A	No Recovery Time > 500mA (Io)	0 ns	8 µA @ 1.2 kV	-	Surface Mount	DO-221AA, SMB Flat Leads	SMBF	-55°C ~ 175°C
NRVUD340T4G	onsemi	DIODE GEN PURP 400V 3A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	400 V	3A	1.15 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 400 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	DPAK	-65°C ~ 175°C
1N6631U-TR	Microchip Technology	DIODE GEN PURP 1KV 1.4A E-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1.4A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Current - Reverse Leakage @ Vr: 4 µA @ 1000 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: E-MELF Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	1000 V	1.4A	1.6 V @ 1.4 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	4 µA @ 1000 V	-	Surface Mount	SQ-MELF, B	E-MELF	-65°C ~ 150°C