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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 10A TO220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 710mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 60V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: TO-220-2 |
Stock6,496 |
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60V | 10A | 710mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 520V 5A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 520V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 95ns
- Current - Reverse Leakage @ Vr: 5µA @ 520V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AA, DO-27, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-201AA, DO-27, Axial |
Stock4,080 |
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520V | 5A | 1.15V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 95ns | 5µA @ 520V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 175°C |
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Diodes Incorporated |
DIODE SCHOTTKY 50V 3A SMB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 700mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 50V
- Capacitance @ Vr, F: 200pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: SMB
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AA, SMB |
Stock25,800 |
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50V | 3A | 700mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | 200pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 300A DO205AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300V
- Current - Average Rectified (Io): 300A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 942A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40mA @ 300V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-205AB, DO-9, Stud
- Supplier Device Package: DO-205AB, DO-9
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: DO-205AB, DO-9, Stud |
Stock2,288 |
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300V | 300A | 1.4V @ 942A | Standard Recovery >500ns, > 200mA (Io) | - | 40mA @ 300V | - | Chassis, Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -65°C ~ 200°C |
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Vishay Semiconductor Diodes Division |
DIODE MODULE 30V 120A D-67
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 120A
- Voltage - Forward (Vf) (Max) @ If: 570mV @ 120A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10mA @ 30V
- Capacitance @ Vr, F: 7400pF @ 5V, 1MHz
- Mounting Type: Chassis Mount
- Package / Case: D-67 HALF-PAK
- Supplier Device Package: D-67
- Operating Temperature - Junction: -
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Package: D-67 HALF-PAK |
Stock6,608 |
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30V | 120A | 570mV @ 120A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10mA @ 30V | 7400pF @ 5V, 1MHz | Chassis Mount | D-67 HALF-PAK | D-67 | - |
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Vishay Semiconductor Diodes Division |
DIODE STD REC ISO LEAD 70A DO5
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 70A
- Voltage - Forward (Vf) (Max) @ If: 1.35V @ 220A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-203AB (DO-5)
- Operating Temperature - Junction: -65°C ~ 180°C
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Package: DO-203AB, DO-5, Stud |
Stock6,496 |
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600V | 70A | 1.35V @ 220A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -65°C ~ 180°C |
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GeneSiC Semiconductor |
DIODE GEN PURP REV 1KV 20A DO5
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 20A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500ns
- Current - Reverse Leakage @ Vr: 25µA @ 800V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -40°C ~ 125°C
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Package: DO-203AB, DO-5, Stud |
Stock6,960 |
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1000V | 20A | 1V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 25µA @ 800V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 125°C |
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GeneSiC Semiconductor |
DIODE GEN PURP REV 50V 20A DO5
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 20A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 200ns
- Current - Reverse Leakage @ Vr: 25µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -40°C ~ 125°C
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Package: DO-203AB, DO-5, Stud |
Stock7,312 |
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50V | 20A | 1V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 25µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE 40A BRAZ SQR DO5
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 40A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 125A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-203AB (DO-5)
- Operating Temperature - Junction: -65°C ~ 190°C
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Package: DO-203AB, DO-5, Stud |
Stock4,656 |
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800V | 40A | 1.3V @ 125A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -65°C ~ 190°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A TO263AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.75V @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 30µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5,088 |
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600V | 8A | 1.75V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 30µA @ 600V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, SUPER FAST, 10A, 600V, 35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Capacitance @ Vr, F: 50pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack, Isolated Tab
- Supplier Device Package: ITO-220AB
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-220-3 Full Pack, Isolated Tab |
Stock2,528 |
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600V | 10A | 1.7V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | 50pF @ 0V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 10A,
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 850mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-220-2 Full Pack |
Stock3,536 |
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100V | 10A | 850mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 5A, 5
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 700mV @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-220-2 Full Pack |
Stock7,456 |
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50V | 5A | 700mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3A DO214AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.05V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 40ns
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB, (SMC)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: DO-214AB, SMC |
Stock138,000 |
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200V | 3A | 1.05V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 5µA @ 200V | - | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 175°C |
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Microsemi Corporation |
DIODE SCHOTTKY 1A 80V POWERMITE
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock4,688 |
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- | - | - | - | - | - | - | - | - | - | - |
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Vishay Semiconductor Diodes Division |
DIODE FAST REC 200V 1A DO214AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AC, SMA |
Stock2,944 |
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200V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | 10pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SW 1A 600V DO-214AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 5µA @ 400V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AC, SMA |
Stock2,944 |
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600V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 400V | 10pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 200MA SOD323
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 650mV @ 50mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 5ns
- Current - Reverse Leakage @ Vr: 500nA @ 25V
- Capacitance @ Vr, F: 7pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: SOD-323
- Operating Temperature - Junction: 125°C (Max)
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Package: SC-76, SOD-323 |
Stock3,408 |
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30V | 200mA (DC) | 650mV @ 50mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 500nA @ 25V | 7pF @ 1V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | 125°C (Max) |
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TSC America Inc. |
DIODE, FAST, 0.5A, 100V, 150NS,
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 5µA @ 100V
- Capacitance @ Vr, F: 4pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-219AB |
Stock2,032 |
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100V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 100V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 75V 2A DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 75V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 8ns
- Current - Reverse Leakage @ Vr: 5µA @ 75V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: 175°C (Max)
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Package: DO-204AH, DO-35, Axial |
Stock7,024 |
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75V | 2A | 1V @ 10mA | Fast Recovery =< 500ns, > 200mA (Io) | 8ns | 5µA @ 75V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
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Nexperia USA Inc. |
DIODE SCHOTTKY 40V 3A SOD128
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 490mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200µA @ 40V
- Capacitance @ Vr, F: 350pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: CFP5
- Operating Temperature - Junction: 150°C (Max)
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Package: SOD-128 |
Stock3,840 |
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40V | 3A | 490mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 40V | 350pF @ 1V, 1MHz | Surface Mount | SOD-128 | CFP5 | 150°C (Max) |
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Power Integrations |
DIODE SCHOTTKY 600V 5A TO220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 3.14V @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 15ns
- Current - Reverse Leakage @ Vr: 15µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: 150°C (Max)
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Package: TO-220-2 |
Stock33,144 |
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600V | 5A | 3.14V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 15ns | 15µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
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Comchip Technology |
DIODE SIL CARB 1.2KV 6.2A TO263
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 6.2A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
- Capacitance @ Vr, F: 136pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (D2PAK)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock1,176 |
|
1200 V | 6.2A | 1.7 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | 136pF @ 0V, 1MHz | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263 (D2PAK) | -55°C ~ 175°C |
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SMC Diode Solutions |
600V, 60A, TO-247AC, ULTRA FAST
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock300 |
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- | - | - | - | - | - | - | - | - | - | - |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 45V 15A SMPC4.0
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 300 µA @ 45 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: SMPC4.0
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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45 V | 15A | 560 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300 µA @ 45 V | - | Surface Mount | TO-277, 3-PowerDFN | SMPC4.0 | -55°C ~ 150°C |
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Bourns Inc. |
DIODE GEN PURP 200V 3A 2SMD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 200 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, No Lead
- Supplier Device Package: 2-SMD
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: - |
Request a Quote |
|
200 V | 3A | 1 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 200 V | - | Surface Mount | 2-SMD, No Lead | 2-SMD | -65°C ~ 175°C |
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Microchip Technology |
DIODE GEN PURP 1KV 150A DO205AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 150A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 1000 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-205AA, DO-8, Stud
- Supplier Device Package: DO-205AA (DO-8)
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: - |
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1000 V | 150A | 1.1 V @ 200 A | Standard Recovery >500ns, > 200mA (Io) | - | 50 µA @ 1000 V | - | Stud Mount | DO-205AA, DO-8, Stud | DO-205AA (DO-8) | -65°C ~ 200°C |
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Solid State Inc. |
DIODE GEN PURP 1KV 12A DO4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 1000 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4
- Operating Temperature - Junction: -65°C ~ 190°C
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Package: - |
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1000 V | 12A | 1 V @ 12 A | Standard Recovery >500ns, > 200mA (Io) | - | 500 µA @ 1000 V | - | Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 190°C |