Page 14 - Transistors - Bipolar (BJT) - Arrays, Pre-Biased | Discrete Semiconductor Products

BCR198SE6327BTSA1
Infineon Technologies

TRANS 2PNP PREBIAS 0.25W SOT363

Package: 6-VSSOP, SC-88, SOT-363

Stock2,640
RN2969FE(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ES6

Package: SOT-563, SOT-666

Stock7,792
UP0339400L
Panasonic Electronic Components

TRANS PREBIAS NPN/PNP SSMINI5

Package: SOT-665

Stock7,280
NP0G3D100A
Panasonic Electronic Components

TRANS PREBIAS NPN/PNP SSSMINI6

Package: SOT-963

Stock4,400
BCR08PNH6327XTSA1
Infineon Technologies

TRANS NPN/PNP PREBIAS SOT363

Package: 6-VSSOP, SC-88, SOT-363

Stock7,584
MIMD10A-7-F
Diodes Incorporated

TRANS PREBIAS NPN/PNP SOT363

Package: 6-TSSOP, SC-88, SOT-363

Stock1,609,440
NSVMUN5133DW1T1G
ON Semiconductor

TRANS 2PNP BRT BIPO SOT363-6

Package: 6-TSSOP, SC-88, SOT-363

Stock2,080
SMUN5312DW1T1G
ON Semiconductor

TRANS NPN/PNP PREBIAS SOT363

Package: 6-TSSOP, SC-88, SOT-363

Stock6,672
UMH14NTR
Rohm Semiconductor

TRANS 2NPN PREBIAS 0.15W UMT6

Package: 6-TSSOP, SC-88, SOT-363

Stock144,000
DCX114EK-7-F
Diodes Incorporated

TRANS NPN/PNP PREBIAS 0.3W SC74R

Package: SC-74R

Stock6,336
UMG3NTR
Rohm Semiconductor

TRANS 2NPN PREBIAS 0.15W UMT5

Package: 5-TSSOP, SC-70-5, SOT-353

Stock708,756
PEMD12,115
Nexperia USA Inc.

TRANS PREBIAS NPN/PNP SOT666

Package: SOT-563, SOT-666

Stock7,664
RN2607(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.3W SM6

Package: SC-74, SOT-457

Stock6,016
DMG963HC0R
Panasonic Electronic Components

TRANS PREBIAS NPN/PNP SSMINI5

Package: SOT-665

Stock3,072
XP0621100L
Panasonic Electronic Components

TRANS PREBIAS DUAL NPN SMINI6

Package: 6-TSSOP, SC-88, SOT-363

Stock4,320
XN0438100L
Panasonic Electronic Components

TRANS NPN/PNP PREBIAS 0.3W MINI6

Package: SOT-23-6

Stock24,000
SMUN5213DW1T1G
ON Semiconductor

TRANS 2NPN PREBIAS 0.187W SOT363

Package: 6-TSSOP, SC-88, SOT-363

Stock28,698
DMG264040R
Panasonic Electronic Components

TRANS NPN/PNP PREBIAS 0.3W MINI6

Package: SOT-23-6

Stock95,628
PQMH13-QZ
Nexperia USA Inc.

PQMH13-Q/SOT1216/DFN1010B-6

Package: -

Stock15,000
RN1701-LF
Toshiba Semiconductor and Storage

NPNX2 BRT Q1BSR4.7KOHM Q1BER4.7K

Package: -

Stock19,077

Part Number	Manufacturer	Description	Package	Stock	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1) (Ohms)	Resistor - Emitter Base (R2) (Ohms)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequency - Transition	Power - Max	Mounting Type	Package / Case	Supplier Device Package
BCR198SE6327BTSA1	Infineon Technologies	TRANS 2PNP PREBIAS 0.25W SOT363 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): - Frequency - Transition: 190MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	Package: 6-VSSOP, SC-88, SOT-363	Stock2,640	100mA	50V	47k	47k	70 @ 5mA, 5V	300mV @ 500µA, 10mA	-	190MHz	250mW	Surface Mount	6-VSSOP, SC-88, SOT-363	PG-SOT363-6
RN2969FE(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.1W ES6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	Package: SOT-563, SOT-666	Stock7,792	100mA	50V	47k	22k	70 @ 10mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	200MHz	100mW	Surface Mount	SOT-563, SOT-666	ES6
UP0339400L	Panasonic Electronic Components	TRANS PREBIAS NPN/PNP SSMINI5 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k, 510 Resistor - Emitter Base (R2) (Ohms): 47k, 5.1k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 20 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz, 80MHz Power - Max: 125mW Mounting Type: Surface Mount Package / Case: SOT-665 Supplier Device Package: SSMini5-F2	Package: SOT-665	Stock7,280	100mA	50V	47k, 510	47k, 5.1k	80 @ 5mA, 10V / 20 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	150MHz, 80MHz	125mW	Surface Mount	SOT-665	SSMini5-F2
NP0G3D100A	Panasonic Electronic Components	TRANS PREBIAS NPN/PNP SSSMINI6 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k, 47k Resistor - Emitter Base (R2) (Ohms): 4.7k, 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V / 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz, 80MHz Power - Max: 125mW Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SSSMini6-F1	Package: SOT-963	Stock4,400	80mA	50V	4.7k, 47k	4.7k, 47k	20 @ 5mA, 10V / 80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	150MHz, 80MHz	125mW	Surface Mount	SOT-963	SSSMini6-F1
BCR08PNH6327XTSA1	Infineon Technologies	TRANS NPN/PNP PREBIAS SOT363 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): - Frequency - Transition: 170MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	Package: 6-VSSOP, SC-88, SOT-363	Stock7,584	100mA	50V	2.2k	47k	70 @ 5mA, 5V	300mV @ 500µA, 10mA	-	170MHz	250mW	Surface Mount	6-VSSOP, SC-88, SOT-363	PG-SOT363-6
MIMD10A-7-F	Diodes Incorporated	TRANS PREBIAS NPN/PNP SOT363 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA, 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 100, 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA / 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz, 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock1,609,440	100mA, 500mA	50V	100, 10k	10k	100 @ 1mA, 5V	300mV @ 1mA, 10mA / 300mV @ 5mA, 100mA	500nA	250MHz, 200MHz	200mW	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
NSVMUN5133DW1T1G	ON Semiconductor	TRANS 2PNP BRT BIPO SOT363-6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 250mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock2,080	100mA	50V	4.7k	47k	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	250mW	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
SMUN5312DW1T1G	ON Semiconductor	TRANS NPN/PNP PREBIAS SOT363 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 187mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock6,672	100mA	50V	22k	22k	60 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	187mW	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
UMH14NTR	Rohm Semiconductor	TRANS 2NPN PREBIAS 0.15W UMT6 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): - Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	Package: 6-TSSOP, SC-88, SOT-363	Stock144,000	100mA	50V	47k	-	100 @ 1mA, 5V	300mV @ 1mA, 10mA	-	250MHz	150mW	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6
DCX114EK-7-F	Diodes Incorporated	TRANS NPN/PNP PREBIAS 0.3W SC74R Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74R Supplier Device Package: SC-74R	Package: SC-74R	Stock6,336	100mA	50V	10k	10k	30 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	300mW	Surface Mount	SC-74R	SC-74R
UMG3NTR	Rohm Semiconductor	TRANS 2NPN PREBIAS 0.15W UMT5 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): - Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: UMT5	Package: 5-TSSOP, SC-70-5, SOT-353	Stock708,756	100mA	50V	4.7k	-	100 @ 1mA, 5V	150mV @ 250µA, 5mA	-	250MHz	150mW	Surface Mount	5-TSSOP, SC-70-5, SOT-353	UMT5
PEMD12,115	Nexperia USA Inc.	TRANS PREBIAS NPN/PNP SOT666 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: - Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-666	Package: SOT-563, SOT-666	Stock7,664	100mA	50V	47k	47k	80 @ 5mA, 5V	150mV @ 500µA, 10mA	1µA	-	300mW	Surface Mount	SOT-563, SOT-666	SOT-666
RN2607(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.3W SM6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	Package: SC-74, SOT-457	Stock6,016	100mA	50V	10k	47k	80 @ 10mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	200MHz	300mW	Surface Mount	SC-74, SOT-457	SM6
DMG963HC0R	Panasonic Electronic Components	TRANS PREBIAS NPN/PNP SSMINI5 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k, 510 Resistor - Emitter Base (R2) (Ohms): 47k, 5.1k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 20 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 125mW Mounting Type: Surface Mount Package / Case: SOT-665 Supplier Device Package: SSMini5-F4-B	Package: SOT-665	Stock3,072	100mA	50V	47k, 510	47k, 5.1k	80 @ 5mA, 10V / 20 @ 5mA, 10V	250mV @ 500µA, 10mA	500nA	-	125mW	Surface Mount	SOT-665	SSMini5-F4-B
XP0621100L	Panasonic Electronic Components	TRANS PREBIAS DUAL NPN SMINI6 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SMINI6-G1	Package: 6-TSSOP, SC-88, SOT-363	Stock4,320	100mA	50V	10k	10k	35 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	150MHz	150mW	Surface Mount	6-TSSOP, SC-88, SOT-363	SMINI6-G1
XN0438100L	Panasonic Electronic Components	TRANS NPN/PNP PREBIAS 0.3W MINI6 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA, 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k, 4.7k Resistor - Emitter Base (R2) (Ohms): 4.7k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 50 @ 100mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA / 250mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA, 1µA Frequency - Transition: 150MHz, 200MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: MINI6-G1	Package: SOT-23-6	Stock24,000	100mA, 500mA	50V	47k, 4.7k	4.7k	80 @ 5mA, 10V / 50 @ 100mA, 10V	250mV @ 300µA, 10mA / 250mV @ 5mA, 100mA	500nA, 1µA	150MHz, 200MHz	300mW	Surface Mount	SOT-23-6	MINI6-G1
SMUN5213DW1T1G	ON Semiconductor	TRANS 2NPN PREBIAS 0.187W SOT363 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 187mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock28,698	100mA	50V	47k	47k	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	187mW	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
DMG264040R	Panasonic Electronic Components	TRANS NPN/PNP PREBIAS 0.3W MINI6 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: Mini6-G4-B	Package: SOT-23-6	Stock95,628	100mA	50V	10k	47k	80 @ 5mA, 10V	250mV @ 500µA, 10mA	500nA	-	300mW	Surface Mount	SOT-23-6	Mini6-G4-B
PQMH13-QZ	Nexperia USA Inc.	PQMH13-Q/SOT1216/DFN1010B-6 Transistor Type: 2 NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA Frequency - Transition: 230MHz Power - Max: 230mW Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Supplier Device Package: DFN1010B-6	Package: -	Stock15,000	100mA	50V	4.7kOhms	47kOhms	100 @ 10mA, 5V	100mV @ 250µA, 5mA	100nA	230MHz	230mW	Surface Mount	6-XFDFN Exposed Pad	DFN1010B-6
RN1701-LF	Toshiba Semiconductor and Storage	NPNX2 BRT Q1BSR4.7KOHM Q1BER4.7K Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: USV	Package: -	Stock19,077	100mA	50V	4.7kOhms	4.7kOhms	30 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	200mW	Surface Mount	5-TSSOP, SC-70-5, SOT-353	USV
NSBC114EDXV6	onsemi	TRANS 2NPN PREBIAS 0.5W SOT563 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 500mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: -	Request a Quote	100mA	50V	10kOhms	10kOhms	35 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	500mW	Surface Mount	SOT-563, SOT-666	SOT-563
NSBA143TDXV6T5	onsemi	SMALL SIGNAL BIPOLAR TRANSISTOR Transistor Type: 2 PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 500mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: -	Request a Quote	100mA	50V	4.7kOhms	-	160 @ 5mA, 10V	250mV @ 1mA, 10mA	500nA	-	500mW	Surface Mount	SOT-563, SOT-666	SOT-563
PUMH2F	Nexperia USA Inc.	TRANS PREBIAS 2NPN 50V 6TSSOP Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: 230MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	Package: -	Stock29,910	100mA	50V	47kOhms	47kOhms	80 @ 5mA, 5V	150mV @ 500µA, 10mA	1µA	230MHz	300mW	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
PUMD13-1F	Nexperia USA Inc.	PUMD13 - Small Signal Bipolar Tr Transistor Type: 1 NPN, 1 PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: 230MHz, 180MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	Package: -	Request a Quote	100mA	50V	4.7kOhms	47kOhms	100 @ 10mA, 5V	100mV @ 250µA, 5mA	1µA	230MHz, 180MHz	200mW	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
RN4906-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q 2-IN-1 (POINT-SYM) PN Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz, 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	Package: -	Stock8,100	100mA	50V	4.7kOhms	47kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	200MHz, 250MHz	200mW	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
UMD22NFHATR	Rohm Semiconductor	PNP+NPN DIGITAL TRANSISTOR (WITH Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	Package: -	Stock25,650	100mA	50V	4.7kOhms	47kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	150mW	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6
RN1901FE-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q 2-IN-1 (POINT-SYMMETR Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	Package: -	Stock23,850	100mA	50V	4.7kOhms	4.7kOhms	30 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	100mW	Surface Mount	SOT-563, SOT-666	ES6
RN4907-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q 2-IN-1 (POINT-SYM) PN Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz, 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	Package: -	Stock9,000	100mA	50V	10kOhms	47kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	200MHz, 250MHz	200mW	Surface Mount	6-TSSOP, SC-88, SOT-363	US6