Page 27 - Transistors - Bipolar (BJT) - Arrays, Pre-Biased | Discrete Semiconductor Products

RN1970FE(TE85L,F)
Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ES6

Package: SOT-563, SOT-666

Stock4,688
EMA6DXV5T1
ON Semiconductor

TRANS 2PNP PREBIAS 0.23W SOT553

Package: SOT-553

Stock3,328
NSBA113EDXV6T1
ON Semiconductor

TRANS 2PNP PREBIAS 0.5W SOT563

Package: SOT-563, SOT-666

Stock6,944
FMG1AT148
Rohm Semiconductor

TRANS 2NPN PREBIAS 0.3W SMT5

Package: SC-74A, SOT-753

Stock645,420
DCX143EH-7
Diodes Incorporated

TRANS PREBIAS NPN/PNP SOT563

Package: SOT-563, SOT-666

Stock6,544
NSBA123TDP6T5G
ON Semiconductor

TRANS 2PNP PREBIAS 0.408W SOT963

Package: SOT-963

Stock3,360
NSBC124EPDXV6T5G
ON Semiconductor

TRANS PREBIAS NPN/PNP SOT563

Package: SOT-563, SOT-666

Stock3,504
PEMB14,115
Nexperia USA Inc.

TRANS 2PNP PREBIAS 0.3W SOT666

Package: SOT-563, SOT-666

Stock6,160
PEMB17,115
Nexperia USA Inc.

TRANS 2PNP PREBIAS 0.3W SOT666

Package: SOT-563, SOT-666

Stock2,608
PUMH18,115
Nexperia USA Inc.

TRANS 2NPN PREBIAS 0.3W 6TSSOP

Package: 6-TSSOP, SC-88, SOT-363

Stock6,320
PEMH13,115
Nexperia USA Inc.

TRANS 2NPN PREBIAS 0.3W SOT666

Package: SOT-563, SOT-666

Stock5,040
PQMH10Z
Nexperia USA Inc.

TRANS NPN/NPN RET 6DFN

Package: 6-XFDFN Exposed Pad

Stock6,384
PQMH2Z
Nexperia USA Inc.

TRANS NPN/NPN RET 6DFN

Package: 6-XFDFN Exposed Pad

Stock2,000
PUMH9,135
Nexperia USA Inc.

TRANS 2NPN PREBIAS 0.3W 6TSSOP

Package: 6-TSSOP, SC-88, SOT-363

Stock3,392
EMH3T2R
Rohm Semiconductor

TRANS 2NPN PREBIAS 0.15W EMT6

Package: SOT-563, SOT-666

Stock537,600
DCX115EK-7-F
Diodes Incorporated

TRANS NPN/PNP PREBIAS 0.3W SC74R

Package: SC-74R

Stock6,944
RN4985,LF(CT
Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.2W US6

Package: 6-TSSOP, SC-88, SOT-363

Stock7,184
RN1906FE,LF(CT
Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ES6

Package: SOT-563, SOT-666

Stock29,844
RN2907FE,LF(CB
Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ES6

Package: SOT-563, SOT-666

Stock84,138
IMB11AT110
Rohm Semiconductor

TRANS PREBIAS DUAL PNP SMT6

Package: SC-74, SOT-457

Stock36,000

Part Number	Manufacturer	Description	Package	Stock	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1) (Ohms)	Resistor - Emitter Base (R2) (Ohms)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequency - Transition	Power - Max	Mounting Type	Package / Case	Supplier Device Package
RN1970FE(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2NPN PREBIAS 0.1W ES6 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	Package: SOT-563, SOT-666	Stock4,688	100mA	50V	4.7k	-	120 @ 1mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	250MHz	100mW	Surface Mount	SOT-563, SOT-666	ES6
EMA6DXV5T1	ON Semiconductor	TRANS 2PNP PREBIAS 0.23W SOT553 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 230mW Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: SOT-553	Package: SOT-553	Stock3,328	100mA	50V	47k	-	160 @ 5mA, 10V	250mV @ 1mA, 10mA	500nA	-	230mW	Surface Mount	SOT-553	SOT-553
NSBA113EDXV6T1	ON Semiconductor	TRANS 2PNP PREBIAS 0.5W SOT563 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 1k Resistor - Emitter Base (R2) (Ohms): 1k DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 500mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: SOT-563, SOT-666	Stock6,944	100mA	50V	1k	1k	3 @ 5mA, 10V	250mV @ 5mA, 10mA	500nA	-	500mW	Surface Mount	SOT-563, SOT-666	SOT-563
FMG1AT148	Rohm Semiconductor	TRANS 2NPN PREBIAS 0.3W SMT5 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMT5	Package: SC-74A, SOT-753	Stock645,420	100mA	50V	22k	22k	56 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	300mW	Surface Mount	SC-74A, SOT-753	SMT5
DCX143EH-7	Diodes Incorporated	TRANS PREBIAS NPN/PNP SOT563 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 4.7k DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: SOT-563, SOT-666	Stock6,544	100mA	50V	4.7k	4.7k	20 @ 10mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	150mW	Surface Mount	SOT-563, SOT-666	SOT-563
NSBA123TDP6T5G	ON Semiconductor	TRANS 2PNP PREBIAS 0.408W SOT963 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 408mW Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SOT-963	Package: SOT-963	Stock3,360	100mA	50V	2.2k	-	160 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	408mW	Surface Mount	SOT-963	SOT-963
NSBC124EPDXV6T5G	ON Semiconductor	TRANS PREBIAS NPN/PNP SOT563 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 500mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: SOT-563, SOT-666	Stock3,504	100mA	50V	22k	22k	60 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	500mW	Surface Mount	SOT-563, SOT-666	SOT-563
PEMB14,115	Nexperia USA Inc.	TRANS 2PNP PREBIAS 0.3W SOT666 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: - Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-666	Package: SOT-563, SOT-666	Stock6,160	100mA	50V	47k	-	100 @ 1mA, 5V	150mV @ 500µA, 10mA	1µA	-	300mW	Surface Mount	SOT-563, SOT-666	SOT-666
PEMB17,115	Nexperia USA Inc.	TRANS 2PNP PREBIAS 0.3W SOT666 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: - Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-666	Package: SOT-563, SOT-666	Stock2,608	100mA	50V	47k	22k	60 @ 5mA, 5V	150mV @ 500µA, 10mA	1µA	-	300mW	Surface Mount	SOT-563, SOT-666	SOT-666
PUMH18,115	Nexperia USA Inc.	TRANS 2NPN PREBIAS 0.3W 6TSSOP Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: - Power - Max: 300mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	Package: 6-TSSOP, SC-88, SOT-363	Stock6,320	100mA	50V	4.7k	10k	50 @ 10mA, 5V	100mV @ 500µA, 10mA	1µA	-	300mW	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
PEMH13,115	Nexperia USA Inc.	TRANS 2NPN PREBIAS 0.3W SOT666 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: - Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-666	Package: SOT-563, SOT-666	Stock5,040	100mA	50V	4.7k	47k	100 @ 10mA, 5V	100mV @ 250µA, 5mA	1µA	-	300mW	Surface Mount	SOT-563, SOT-666	SOT-666
PQMH10Z	Nexperia USA Inc.	TRANS NPN/NPN RET 6DFN Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: 230MHz Power - Max: 350mW Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Supplier Device Package: DFN1010B-6	Package: 6-XFDFN Exposed Pad	Stock6,384	100mA	50V	2.2k	47k	100 @ 10mA, 5V	100mV @ 250µA, 5mA	1µA	230MHz	350mW	Surface Mount	6-XFDFN Exposed Pad	DFN1010B-6
PQMH2Z	Nexperia USA Inc.	TRANS NPN/NPN RET 6DFN Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: 230MHz Power - Max: 230mW Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Supplier Device Package: DFN1010B-6	Package: 6-XFDFN Exposed Pad	Stock2,000	100mA	50V	47k	47k	80 @ 5mA, 5V	150mV @ 500µA, 10mA	1µA	230MHz	230mW	Surface Mount	6-XFDFN Exposed Pad	DFN1010B-6
PUMH9,135	Nexperia USA Inc.	TRANS 2NPN PREBIAS 0.3W 6TSSOP Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: - Power - Max: 300mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	Package: 6-TSSOP, SC-88, SOT-363	Stock3,392	100mA	50V	10k	47k	100 @ 5mA, 5V	100mV @ 250µA, 5mA	1µA	-	300mW	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
EMH3T2R	Rohm Semiconductor	TRANS 2NPN PREBIAS 0.15W EMT6 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): - Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	Package: SOT-563, SOT-666	Stock537,600	100mA	50V	4.7k	-	100 @ 1mA, 5V	300mV @ 250µA, 5mA	-	250MHz	150mW	Surface Mount	SOT-563, SOT-666	EMT6
DCX115EK-7-F	Diodes Incorporated	TRANS NPN/PNP PREBIAS 0.3W SC74R Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 100k Resistor - Emitter Base (R2) (Ohms): 100k DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74R Supplier Device Package: SC-74R	Package: SC-74R	Stock6,944	100mA	50V	100k	100k	82 @ 5mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	300mW	Surface Mount	SC-74R	SC-74R
RN4985,LF(CT	Toshiba Semiconductor and Storage	TRANS NPN/PNP PREBIAS 0.2W US6 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100µA (ICBO) Frequency - Transition: 250MHz, 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	Package: 6-TSSOP, SC-88, SOT-363	Stock7,184	100mA	50V	2.2k	47k	80 @ 10mA, 5V	300mV @ 250µA, 5mA	100µA (ICBO)	250MHz, 200MHz	200mW	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
RN1906FE,LF(CT	Toshiba Semiconductor and Storage	TRANS 2NPN PREBIAS 0.1W ES6 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	Package: SOT-563, SOT-666	Stock29,844	100mA	50V	4.7k	47k	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	100mW	Surface Mount	SOT-563, SOT-666	ES6
RN2907FE,LF(CB	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.1W ES6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	Package: SOT-563, SOT-666	Stock84,138	100mA	50V	10k	47k	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	200MHz	100mW	Surface Mount	SOT-563, SOT-666	ES6
IMB11AT110	Rohm Semiconductor	TRANS PREBIAS DUAL PNP SMT6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SMT6	Package: SC-74, SOT-457	Stock36,000	100mA	50V	10k	10k	30 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	300mW	Surface Mount	SC-74, SOT-457	SMT6
UMH11NFHATN	Rohm Semiconductor	NPN+NPN DIGITAL TRANSISTOR (CORR Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	Package: -	Stock7,101	100mA	50V	10kOhms	10kOhms	30 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	150mW	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6
RN4989-TE85L-F	Toshiba Semiconductor and Storage	NPN + PNP BRT Q1BSR=47KOHM Q1BER Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47kOhms Resistor - Emitter Base (R2) (Ohms): 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz, 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	Package: -	Stock594	100mA	50V	47kOhms	22kOhms	70 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz, 200MHz	200mW	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
NSBA143ZDXV6T1G	onsemi	TRANS PREBIAS 2PNP 50V SOT563 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 500mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: -	Request a Quote	100mA	50V	4.7kOhms	47kOhms	80 @ 5mA, 10V	250mV @ 1mA, 10mA	500nA	-	500mW	Surface Mount	SOT-563, SOT-666	SOT-563
PUMH7H-QX	Nexperia USA Inc.	PUMH7H-QX Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA Frequency - Transition: 230MHz Power - Max: 240mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	Package: -	Request a Quote	100mA	50V	4.7kOhms	-	200 @ 1mA, 5V	100mV @ 500µA, 10mA	100nA	230MHz	240mW	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
PUMD9-QF	Nexperia USA Inc.	PUMD9-Q/SOT363/SC-88 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA Frequency - Transition: 230MHz, 180MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	Package: -	Request a Quote	100mA	50V	10kOhms	47kOhms	100 @ 5mA, 5V	100mV @ 250µA, 5mA	100nA	230MHz, 180MHz	200mW	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
NSBC114TPDXV6T1G	onsemi	TRANS PREBIAS NPN/PNP 50V SOT563 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 500mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	Package: -	Request a Quote	100mA	50V	10kOhms	-	160 @ 5mA, 10V	250mV @ 1mA, 10mA	500nA	-	500mW	Surface Mount	SOT-563, SOT-666	SOT-563
MUN5314DW1T1	onsemi	TRANS BRT DUAL 100MA 50V SOT-363 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 385mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	Package: -	Request a Quote	100mA	50V	10kOhms	47kOhms	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	385mW	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
PRMD12Z	Nexperia USA Inc.	TRANS PREBIAS 1NPN 1PNP 50V 6DFN Transistor Type: 1 NPN Pre-Biased, 1 PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: 230MHz Power - Max: 480mW Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Supplier Device Package: DFN1412-6	Package: -	Stock14,277	100mA	50V	47kOhms	47kOhms	80 @ 5mA, 5V	150mV @ 500µA, 10mA	1µA	230MHz	480mW	Surface Mount	6-XFDFN Exposed Pad	DFN1412-6