|
|
Infineon Technologies |
TRANS 2NPN PREBIAS 0.25W SOT363
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 100MHz
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-6
|
Package: 6-VSSOP, SC-88, SOT-363 |
Stock5,504 |
|
100mA | 50V | 47k | 47k | 70 @ 5mA, 5V | 300mV @ 500µA, 10mA | - | 100MHz | 250mW | Surface Mount | 6-VSSOP, SC-88, SOT-363 | PG-SOT363-6 |
|
|
Toshiba Semiconductor and Storage |
TRANS 2PNP PREBIAS 0.1W ES6
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
|
Package: SOT-563, SOT-666 |
Stock3,440 |
|
100mA | 50V | 22k | 47k | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 200MHz | 100mW | Surface Mount | SOT-563, SOT-666 | ES6 |
|
|
ON Semiconductor |
TRANS 2NPN PREBIAS 0.23W SOT553
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 230mW
- Mounting Type: Surface Mount
- Package / Case: SOT-553
- Supplier Device Package: SOT-553
|
Package: SOT-553 |
Stock36,480 |
|
100mA | 50V | 47k | 47k | 80 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | - | 230mW | Surface Mount | SOT-553 | SOT-553 |
|
|
Panasonic Electronic Components |
TRANS 2NPN PREBIAS 0.3W MINI5
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 150MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: Mini5-G1
|
Package: SC-74A, SOT-753 |
Stock4,880 |
|
100mA | 50V | 4.7k | 10k | 30 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | 150MHz | 300mW | Surface Mount | SC-74A, SOT-753 | Mini5-G1 |
|
|
NXP |
TRANS NPN PREBIAS/PNP 1.5W 8SO
- Transistor Type: 1 NPN Pre-Biased, 1 PNP
- Current - Collector (Ic) (Max): 100mA, 3A
- Voltage - Collector Emitter Breakdown (Max): 50V, 20V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 150 @ 2A, 2V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 355mV @ 300mA, 3A
- Current - Collector Cutoff (Max): 1µA, 100nA
- Frequency - Transition: 100MHz
- Power - Max: 1.5W
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock4,272 |
|
100mA, 3A | 50V, 20V | 10k | 10k | 30 @ 5mA, 5V / 150 @ 2A, 2V | 150mV @ 500µA, 10mA / 355mV @ 300mA, 3A | 1µA, 100nA | 100MHz | 1.5W | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
ON Semiconductor |
TRANS PREBIAS NPN/PNP SOT563
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
|
Package: SOT-563, SOT-666 |
Stock7,120 |
|
100mA | 50V | 47k | 47k | 80 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | - | 500mW | Surface Mount | SOT-563, SOT-666 | SOT-563 |
|
|
ON Semiconductor |
TRANS NPN/PNP 50V BIPO SC88-6
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock3,728 |
|
100mA | 50V | 4.7k | - | 160 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | - | 250mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-88/SC70-6/SOT-363 |
|
|
Nexperia USA Inc. |
TRANS PREBIAS NPN/PNP SOT666
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k, 22k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V / 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-666
|
Package: SOT-563, SOT-666 |
Stock7,936 |
|
100mA | 50V | 4.7k, 22k | 47k | 80 @ 5mA, 5V / 100 @ 10mA, 5V | 150mV @ 500µA, 10mA / 100mV @ 250µA, 5mA | 1µA | - | 300mW | Surface Mount | SOT-563, SOT-666 | SOT-666 |
|
|
Toshiba Semiconductor and Storage |
TRANS 2NPN PREBIAS 0.1W ES6
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
|
Package: SOT-563, SOT-666 |
Stock3,392 |
|
100mA | 50V | 47k | 22k | 70 @ 10mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 250MHz | 100mW | Surface Mount | SOT-563, SOT-666 | ES6 |
|
|
Nexperia USA Inc. |
TRANS NPN/PNP RET 6DFN
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: 230MHz, 180MHz
- Power - Max: 230mW
- Mounting Type: Surface Mount
- Package / Case: 6-XFDFN Exposed Pad
- Supplier Device Package: DFN1010B-6
|
Package: 6-XFDFN Exposed Pad |
Stock2,048 |
|
100mA | 50V | 22k | 22k | 60 @ 5mA, 5V | 150mV @ 500µA, 10mA | 1µA | 230MHz, 180MHz | 230mW | Surface Mount | 6-XFDFN Exposed Pad | DFN1010B-6 |
|
|
Panasonic Electronic Components |
TRANS PREBIAS NPN/PNP SMINI5
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k, 4.7k
- Resistor - Emitter Base (R2) (Ohms): 47k, 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 30 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 150MHz, 80MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package: SMini5-G1
|
Package: 5-TSSOP, SC-70-5, SOT-353 |
Stock3,636,600 |
|
100mA | 50V | 47k, 4.7k | 47k, 10k | 80 @ 5mA, 10V / 30 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | 150MHz, 80MHz | 150mW | Surface Mount | 5-TSSOP, SC-70-5, SOT-353 | SMini5-G1 |
|
|
Toshiba Semiconductor and Storage |
TRANS 2PNP PREBIAS 0.3W SMV
- Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
|
Package: SC-74A, SOT-753 |
Stock28,320 |
|
100mA | 50V | 4.7k | 47k | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 200MHz | 300mW | Surface Mount | SC-74A, SOT-753 | SMV |
|
|
Nexperia USA Inc. |
TRANS NPN PREBIAS/PNP 6TSSOP
- Transistor Type: 1 NPN Pre-Biased, 1 PNP
- Current - Collector (Ic) (Max): 100mA, 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V, 40V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 150 @ 100mA. 2V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: 300MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock27,222 |
|
100mA, 500mA | 50V, 40V | 10k | 10k | 30 @ 5mA, 5V / 150 @ 100mA. 2V | 150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA | 1µA | 300MHz | 300mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP |
|
|
Nexperia USA Inc. |
TRANS NPN PREBIAS/PNP 6TSSOP
- Transistor Type: 1 NPN Pre-Biased, 1 PNP
- Current - Collector (Ic) (Max): 100mA, 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V, 40V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V / 150 @ 100mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: 300MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock22,044 |
|
100mA, 500mA | 50V, 40V | 47k | 47k | 80 @ 5mA, 5V / 150 @ 100mA, 2V | 150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA | 1µA | 300MHz | 300mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP |
|
|
Nexperia USA Inc. |
TRANS NPN/PNP PREBIAS 0.6W 6TSOP
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 600mW
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: 6-TSOP
|
Package: SC-74, SOT-457 |
Stock96,324 |
|
100mA | 50V | 10k | 10k | 30 @ 5mA, 5V | 150mV @ 500µA, 10mA | 1µA | - | 600mW | Surface Mount | SC-74, SOT-457 | 6-TSOP |
|
|
Panasonic Electronic Components |
TRANS PREBIAS DUAL NPN SMINI6
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, Flat Leads
- Supplier Device Package: SMini6-F3-B
|
Package: 6-SMD, Flat Leads |
Stock1,000,308 |
|
100mA | 50V | 10k | 47k | 80 @ 5mA, 10V | 250mV @ 500µA, 10mA | 500nA | - | 150mW | Surface Mount | 6-SMD, Flat Leads | SMini6-F3-B |
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|
Toshiba Semiconductor and Storage |
AUTO AEC-Q TR PNPX2 BRT, Q1BSR=2
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22kOhms
- Resistor - Emitter Base (R2) (Ohms): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
|
Package: - |
Stock17,988 |
|
100mA | 50V | 22kOhms | 47kOhms | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 200MHz | 200mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 |
|
|
Nexperia USA Inc. |
TRANS PREBIAS 2PNP 80V 6TSSOP
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 80V
- Resistor - Base (R1) (Ohms): 10kOhms
- Resistor - Emitter Base (R2) (Ohms): 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: 150MHz
- Power - Max: 350mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
|
Package: - |
Stock60,000 |
|
100mA | 80V | 10kOhms | 10kOhms | 50 @ 10mA, 5V | 100mV @ 500µA, 10mA | 100nA | 150MHz | 350mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP |
|
|
Toshiba Semiconductor and Storage |
AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22kOhms
- Resistor - Emitter Base (R2) (Ohms): 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
|
Package: - |
Stock24,000 |
|
100mA | 50V | 22kOhms | 22kOhms | 70 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 200MHz | 100mW | Surface Mount | SOT-563, SOT-666 | ES6 |
|
|
Nexperia USA Inc. |
TRANS PREBIAS 1NPN 1PNP 6TSSOP
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 80V
- Resistor - Base (R1) (Ohms): 2.2kOhms
- Resistor - Emitter Base (R2) (Ohms): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: 170MHz, 150MHz
- Power - Max: 350mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
|
Package: - |
Stock53,970 |
|
100mA | 80V | 2.2kOhms | 47kOhms | 100 @ 10mA, 5V | 100mV @ 500µA, 10mA | 100nA | 170MHz, 150MHz | 350mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP |
|
|
Toshiba Semiconductor and Storage |
TRANS NPN/PNP PREBIAS 0.1W ES6
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47kOhms
- Resistor - Emitter Base (R2) (Ohms): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz, 200MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
|
Package: - |
Stock12,000 |
|
100mA | 50V | 47kOhms | 47kOhms | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250MHz, 200MHz | 100mW | Surface Mount | SOT-563, SOT-666 | ES6 |
|
|
Rohm Semiconductor |
NPN+NPN, SOT-363, DUAL DIGITAL T
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 400mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- Resistor - Base (R1) (Ohms): 10kOhms
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 35MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: UMT6
|
Package: - |
Stock9,000 |
|
400mA | 20V | 10kOhms | - | 820 @ 10mA, 5V | 100mV @ 3mA, 30mA | 500nA (ICBO) | 35MHz | 150mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | UMT6 |
|
|
Toshiba Semiconductor and Storage |
AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10kOhms
- Resistor - Emitter Base (R2) (Ohms): 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz, 200MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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Package: - |
Stock20,880 |
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100mA | 50V | 10kOhms | 10kOhms | 50 @ 10mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 250MHz, 200MHz | 100mW | Surface Mount | SOT-563, SOT-666 | ES6 |
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Nexperia USA Inc. |
TRANS PREBIAS
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7kOhms
- Resistor - Emitter Base (R2) (Ohms): 4.7kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: 230MHz, 180MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
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Package: - |
Request a Quote |
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100mA | 50V | 4.7kOhms | 4.7kOhms | 30 @ 10mA, 5V | 150mV @ 500µA, 10mA | 1µA | 230MHz, 180MHz | 300mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP |
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Toshiba Semiconductor and Storage |
TRANS NPN/PNP PREBIAS 0.1W ES6
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22kOhms
- Resistor - Emitter Base (R2) (Ohms): 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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Package: - |
Stock11,550 |
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100mA | 50V | 22kOhms | 22kOhms | 70 @ 10mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 250MHz | 100mW | Surface Mount | SOT-563, SOT-666 | ES6 |
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Toshiba Semiconductor and Storage |
AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2kOhms
- Resistor - Emitter Base (R2) (Ohms): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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Package: - |
Stock22,467 |
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100mA | 50V | 2.2kOhms | 47kOhms | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250MHz | 100mW | Surface Mount | SOT-563, SOT-666 | ES6 |
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Micro Commercial Co |
Interface
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22kOhms
- Resistor - Emitter Base (R2) (Ohms): 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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Package: - |
Request a Quote |
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100mA | 50V | 22kOhms | 22kOhms | 56 @ 5mA, 5V | 100mV @ 250µA, 5mA | 500nA | 250MHz | 150mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 |
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Toshiba Semiconductor and Storage |
NPN + PNP BRT Q1BSR=4.7KOHM Q1BE
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7kOhms
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz, 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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Package: - |
Stock270 |
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100mA | 50V | 4.7kOhms | - | 120 @ 1mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 250MHz, 200MHz | 200mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 |