|
|
Toshiba Semiconductor and Storage |
TRANS 2NPN PREBIAS 0.1W ES6
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
|
Package: SOT-563, SOT-666 |
Stock3,712 |
|
100mA | 50V | 22k | 47k | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 250MHz | 100mW | Surface Mount | SOT-563, SOT-666 | ES6 |
|
|
ON Semiconductor |
TRANS 2NPN PREBIAS 0.23W SOT553
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 230mW
- Mounting Type: Surface Mount
- Package / Case: SOT-553
- Supplier Device Package: SOT-553
|
Package: SOT-553 |
Stock151,644 |
|
100mA | 50V | 47k | 47k | 80 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | - | 230mW | Surface Mount | SOT-553 | SOT-553 |
|
|
ON Semiconductor |
TRANS 2NPN PREBIAS 0.5W SOT563
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 2.2k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
|
Package: SOT-563, SOT-666 |
Stock3,856 |
|
100mA | 50V | 2.2k | 2.2k | 8 @ 5mA, 10V | 250mV @ 5mA, 10mA | 500nA | - | 500mW | Surface Mount | SOT-563, SOT-666 | SOT-563 |
|
|
Diodes Incorporated |
TRANS 2NPN PREBIAS 0.15W SOT353
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package: SOT-353
|
Package: 5-TSSOP, SC-70-5, SOT-353 |
Stock99,600 |
|
100mA | 50V | 10k | - | 100 @ 1mA, 5V | 300mV @ 1mA, 10mA | - | 250MHz | 150mW | Surface Mount | 5-TSSOP, SC-70-5, SOT-353 | SOT-353 |
|
|
ON Semiconductor |
TRANS 2NPN PREBIAS 0.339W SOT963
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 339mW
- Mounting Type: Surface Mount
- Package / Case: SOT-963
- Supplier Device Package: SOT-963
|
Package: SOT-963 |
Stock3,376 |
|
100mA | 50V | 22k | 22k | 60 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | - | 339mW | Surface Mount | SOT-963 | SOT-963 |
|
|
ON Semiconductor |
TRANS 2PNP PREBIAS 0.187W SOT363
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 187mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock6,048 |
|
100mA | 50V | 10k | - | 160 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | - | 187mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-88/SC70-6/SOT-363 |
|
|
Diodes Incorporated |
PREBIAS TRANSISTOR SOT363
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k, 47k
- Resistor - Emitter Base (R2) (Ohms): 10k, 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 250MHz
- Power - Max: 270mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock6,272 |
|
100mA | 50V | 10k, 47k | 10k, 47k | - | - | - | 250MHz | 270mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 |
|
|
Nexperia USA Inc. |
TRANS 2PNP PREBIAS 0.3W SOT666
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-666
|
Package: SOT-563, SOT-666 |
Stock3,344 |
|
100mA | 50V | 10k | 47k | 100 @ 5mA, 5V | 100mV @ 250µA, 5mA | 1µA | - | 300mW | Surface Mount | SOT-563, SOT-666 | SOT-666 |
|
|
Toshiba Semiconductor and Storage |
TRANS NPN/PNP PREBIAS 0.3W SM6
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SM6
|
Package: SC-74, SOT-457 |
Stock25,998 |
|
100mA | 50V | 10k | - | 120 @ 1mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 200MHz | 300mW | Surface Mount | SC-74, SOT-457 | SM6 |
|
|
Infineon Technologies |
TRANS 2PNP PREBIAS 0.25W SOT363
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 200MHz
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-6
|
Package: 6-VSSOP, SC-88, SOT-363 |
Stock29,754 |
|
100mA | 50V | 10k | 47k | 70 @ 5mA, 5V | 300mV @ 500µA, 10mA | - | 200MHz | 250mW | Surface Mount | 6-VSSOP, SC-88, SOT-363 | PG-SOT363-6 |
|
|
Toshiba Semiconductor and Storage |
TRANS 2NPN PREBIAS 0.1W ESV
- Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-553
- Supplier Device Package: ESV
|
Package: SOT-553 |
Stock6,992 |
|
100mA | 50V | 22k | 22k | 70 @ 10mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 250MHz | 100mW | Surface Mount | SOT-553 | ESV |
|
|
Rohm Semiconductor |
TRANS PREBIAS DUAL NPN SMT6
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 150MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SMT6
|
Package: SC-74, SOT-457 |
Stock2,314,800 |
|
600mA | 20V | 4.7k | - | 820 @ 50mA, 5V | 150mV @ 2.5mA, 50mA | - | 150MHz | 300mW | Surface Mount | SC-74, SOT-457 | SMT6 |
|
|
Panasonic Electronic Components |
TRANS PREBIAS DUAL NPN SSMINI5
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 150MHz
- Power - Max: 125mW
- Mounting Type: Surface Mount
- Package / Case: SOT-665
- Supplier Device Package: SSMini5-F3
|
Package: SOT-665 |
Stock139,680 |
|
100mA | 50V | 2.2k | 47k | 80 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | 150MHz | 125mW | Surface Mount | SOT-665 | SSMini5-F3 |
|
|
Nexperia USA Inc. |
TRANS PNP PREBIAS/PNP 6TSOP
- Transistor Type: 1 PNP Pre-Biased, 1 PNP
- Current - Collector (Ic) (Max): 100mA, 1.8A
- Voltage - Collector Emitter Breakdown (Max): 50V, 20V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 4.7k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V / 200 @ 1A, 2V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 210mV @ 100mA, 1.8A
- Current - Collector Cutoff (Max): 1µA, 100nA
- Frequency - Transition: 130MHz
- Power - Max: 760mW
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: 6-TSOP
|
Package: SC-74, SOT-457 |
Stock27,012 |
|
100mA, 1.8A | 50V, 20V | 4.7k | 4.7k | 30 @ 10mA, 5V / 200 @ 1A, 2V | 150mV @ 500µA, 10mA / 210mV @ 100mA, 1.8A | 1µA, 100nA | 130MHz | 760mW | Surface Mount | SC-74, SOT-457 | 6-TSOP |
|
|
Micro Commercial Co |
TRANS 2NPN PREBIAS 0.15W SOT363
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock25,200 |
|
50mA | 50V | 10k | 10k | 30 @ 5mA, 5V | 300mV @ 500µA, 10mA | 500nA | 250MHz | 150mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 |
|
|
ON Semiconductor |
TRANS NPN/PNP PREBIAS 0.25W SC88
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 4.7k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock28,776 |
|
100mA | 50V | 4.7k | 4.7k | 15 @ 5mA, 10V | 250mV @ 1mA, 10mA | 500nA | - | 250mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-88/SC70-6/SOT-363 |
|
|
Toshiba Semiconductor and Storage |
TRANS NPN/PNP PREBIAS 0.2W US6
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz, 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock27,048 |
|
100mA | 50V | 10k | 47k | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250MHz, 200MHz | 200mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 |
|
|
Rohm Semiconductor |
TRANS PREBIAS DUAL PNP UMT6
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: UMT6
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock1,687,800 |
|
100mA | 50V | 47k | 47k | 68 @ 5mA, 5V | 300mV @ 500µA, 10mA | 500nA | 250MHz | 150mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | UMT6 |
|
|
Rohm Semiconductor |
TRANS 2NPN PREBIAS 0.15W UMT5
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package: UMT5
|
Package: 5-TSSOP, SC-70-5, SOT-353 |
Stock1,334,100 |
|
100mA | 50V | 10k | 47k | 68 @ 5mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250MHz | 150mW | Surface Mount | 5-TSSOP, SC-70-5, SOT-353 | UMT5 |
|
|
onsemi |
SS SOT563 RSTR XSTR TR
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 100kOhms
- Resistor - Emitter Base (R2) (Ohms): 100kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 357mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
|
Package: - |
Request a Quote |
|
100mA | 50V | 100kOhms | 100kOhms | 80 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | - | 357mW | Surface Mount | SOT-563, SOT-666 | SOT-563 |
|
|
Rohm Semiconductor |
TRANS DIGITAL BJT NPN 12V 500MA/
- Transistor Type: 1 NPN Pre-Biased, 1 NPN
- Current - Collector (Ic) (Max): 100mA, 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V, 12V
- Resistor - Base (R1) (Ohms): 2.2kOhms
- Resistor - Emitter Base (R2) (Ohms): 2.2kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V / 270 @ 10mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
- Current - Collector Cutoff (Max): 500nA, 100nA (ICBO)
- Frequency - Transition: 250MHz, 320MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: EMT6
|
Package: - |
Request a Quote |
|
100mA, 500mA | 50V, 12V | 2.2kOhms | 2.2kOhms | 20 @ 20mA, 5V / 270 @ 10mA, 2V | 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA | 500nA, 100nA (ICBO) | 250MHz, 320MHz | 150mW | Surface Mount | SOT-563, SOT-666 | EMT6 |
|
|
Nexperia USA Inc. |
PBLS6002D-Q/SOT457/SC-74
- Transistor Type: 1 NPN Pre-Biased, 1 PNP
- Current - Collector (Ic) (Max): 100mA, 700mA
- Voltage - Collector Emitter Breakdown (Max): 50V, 60V
- Resistor - Base (R1) (Ohms): 4.7kOhms
- Resistor - Emitter Base (R2) (Ohms): 4.7kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V / 200 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 340mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 1µA, 100nA
- Frequency - Transition: 185MHz
- Power - Max: 200mW, 250mW
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: 6-TSOP
|
Package: - |
Request a Quote |
|
100mA, 700mA | 50V, 60V | 4.7kOhms | 4.7kOhms | 30 @ 20mA, 5V / 200 @ 1mA, 5V | 150mV @ 500µA, 10mA / 340mV @ 100mA, 1A | 1µA, 100nA | 185MHz | 200mW, 250mW | Surface Mount | SC-74, SOT-457 | 6-TSOP |
|
|
Toshiba Semiconductor and Storage |
AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10kOhms
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
|
Package: - |
Request a Quote |
|
100mA | 50V | 10kOhms | - | 120 @ 1mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 200MHz | 200mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 |
|
|
Nexperia USA Inc. |
TRANS PREBIAS 2PNP 80V 6TSSOP
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 80V
- Resistor - Base (R1) (Ohms): 10kOhms
- Resistor - Emitter Base (R2) (Ohms): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: 150MHz
- Power - Max: 350mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
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Package: - |
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100mA | 80V | 10kOhms | 47kOhms | 100 @ 10mA, 5V | 100mV @ 500µA, 10mA | 100nA | 150MHz | 350mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP |
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Nexperia USA Inc. |
TRANS PREBIAS 2PNP 80V 6TSSOP
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 80V
- Resistor - Base (R1) (Ohms): 22kOhms
- Resistor - Emitter Base (R2) (Ohms): 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: 150MHz
- Power - Max: 235mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
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Package: - |
Request a Quote |
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100mA | 80V | 22kOhms | 22kOhms | 70 @ 10mA, 5V | 100mV @ 500µA, 10mA | 100nA | 150MHz | 235mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP |
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Toshiba Semiconductor and Storage |
PNPX2 BRT Q1BSR22KOHM Q1BER47KOH
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47kOhms
- Resistor - Emitter Base (R2) (Ohms): 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package: USV
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Package: - |
Stock9,000 |
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100mA | 50V | 47kOhms | 22kOhms | 70 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 200MHz | 200mW | Surface Mount | 5-TSSOP, SC-70-5, SOT-353 | USV |
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Toshiba Semiconductor and Storage |
PNPX2 BRT Q1BSR4.7KOHM Q1BER4.7K
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7kOhms
- Resistor - Emitter Base (R2) (Ohms): 4.7kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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Package: - |
Stock18 |
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100mA | 50V | 4.7kOhms | 4.7kOhms | 30 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 200MHz | 200mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 |
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Micro Commercial Co |
Interface
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2kOhm
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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Package: - |
Request a Quote |
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100mA | 50V | 2.2kOhm | - | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250MHz | 150mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 |