|
|
Toshiba Semiconductor and Storage |
TRANS NPN/PNP PREBIAS 0.2W US6
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock3,104 |
|
100mA | 50V | 2.2k | 47k | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 200MHz | 200mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 |
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|
Infineon Technologies |
TRANS 2NPN PREBIAS 0.25W SOT363
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 130MHz
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-6
|
Package: 6-VSSOP, SC-88, SOT-363 |
Stock6,496 |
|
100mA | 50V | 10k | 10k | 30 @ 5mA, 5V | 300mV @ 500µA, 10mA | - | 130MHz | 250mW | Surface Mount | 6-VSSOP, SC-88, SOT-363 | PG-SOT363-6 |
|
|
Rohm Semiconductor |
TRANS NPN PREBIAS/NPN 0.15W EMT6
- Transistor Type: 1 NPN Pre-Biased, 1 NPN
- Current - Collector (Ic) (Max): 100mA, 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V, 12V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V / 270 @ 10mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz, 320MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: EMT6
|
Package: SOT-563, SOT-666 |
Stock7,776 |
|
100mA, 500mA | 50V, 12V | 47k | 47k | 68 @ 5mA, 5V / 270 @ 10mA, 2V | 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA | 500nA | 250MHz, 320MHz | 150mW | Surface Mount | SOT-563, SOT-666 | EMT6 |
|
|
Nexperia USA Inc. |
TRANS PREBIAS NPN/PNP 6TSSOP
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock2,688 |
|
100mA | 50V | 4.7k | 10k | 50 @ 10mA, 5V | 100mV @ 500µA, 10mA | 1µA | - | 300mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP |
|
|
Nexperia USA Inc. |
TRANS PREBIAS NPN/PNP SOT666
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-666
|
Package: SOT-563, SOT-666 |
Stock4,128 |
|
100mA | 50V | 22k | 22k | 60 @ 5mA, 5V | 150mV @ 500µA, 10mA | 1µA | - | 300mW | Surface Mount | SOT-563, SOT-666 | SOT-666 |
|
|
ON Semiconductor |
TRANS 2NPN PREBIAS 0.339W SOT963
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 339mW
- Mounting Type: Surface Mount
- Package / Case: SOT-963
- Supplier Device Package: SOT-963
|
Package: SOT-963 |
Stock4,208 |
|
100mA | 50V | 10k | - | 160 @ 5mA, 10V | 250mV @ 1mA, 10mA | 500nA | - | 339mW | Surface Mount | SOT-963 | SOT-963 |
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|
Diodes Incorporated |
PREBIAS TRANSISTOR SOT363
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k, 22k
- Resistor - Emitter Base (R2) (Ohms): 22k, 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 250MHz
- Power - Max: 270mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock7,728 |
|
100mA | 50V | 22k, 22k | 22k, 22k | - | - | - | 250MHz | 270mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 |
|
|
Toshiba Semiconductor and Storage |
TRANS 2NPN PREBIAS 0.2W US6
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 4.7k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock7,568 |
|
100mA | 50V | 4.7k | 4.7k | 30 @ 10mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 250MHz | 200mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 |
|
|
Panasonic Electronic Components |
TRANS PREBIAS DUAL NPN SSMINI6
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 125mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SSMini6-F3-B
|
Package: SOT-563, SOT-666 |
Stock3,264 |
|
100mA | 50V | 22k | - | 160 @ 5mA, 10V | 250mV @ 500µA, 10mA | 500nA | - | 125mW | Surface Mount | SOT-563, SOT-666 | SSMini6-F3-B |
|
|
Panasonic Electronic Components |
TRANS PREBIAS NPN/PNP SSMINI5
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 125mW
- Mounting Type: Surface Mount
- Package / Case: SOT-665
- Supplier Device Package: SSMini5-F4-B
|
Package: SOT-665 |
Stock3,104 |
|
100mA | 50V | 22k | 22k | 60 @ 5mA, 10V | 250mV @ 500µA, 10mA | 500nA | - | 125mW | Surface Mount | SOT-665 | SSMini5-F4-B |
|
|
Panasonic Electronic Components |
TRANS PNP PREBIAS/NPN 0.3W MINI6
- Transistor Type: 1 PNP Pre-Biased, 1 NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): -
- Resistor - Emitter Base (R2) (Ohms): 4.7k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V / 210 @ 2mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA / 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 500nA, 100µA
- Frequency - Transition: 150MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: Mini6-G4-B
|
Package: SOT-23-6 |
Stock2,976 |
|
100mA | 50V | - | 4.7k | 20 @ 5mA, 10V / 210 @ 2mA, 10V | 250mV @ 500µA, 10mA / 300mV @ 10mA, 100mA | 500nA, 100µA | 150MHz | 300mW | Surface Mount | SOT-23-6 | Mini6-G4-B |
|
|
Panasonic Electronic Components |
TRANS PREBIAS DUAL PNP SMINI5
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: 5-SMD, Flat Leads
- Supplier Device Package: SMini5-F3-B
|
Package: 5-SMD, Flat Leads |
Stock3,088 |
|
100mA | 50V | 10k | - | 160 @ 5mA, 10V | 250mV @ 500µA, 10mA | 500nA | - | 150mW | Surface Mount | 5-SMD, Flat Leads | SMini5-F3-B |
|
|
Panasonic Electronic Components |
TRANS PREBIAS DUAL NPN MINI6
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: Mini6-G4-B
|
Package: SOT-23-6 |
Stock5,664 |
|
100mA | 50V | 10k | 47k | 80 @ 5mA, 10V | 250mV @ 500µA, 10mA | 500nA | - | 300mW | Surface Mount | SOT-23-6 | Mini6-G4-B |
|
|
Toshiba Semiconductor and Storage |
TRANS 2PNP PREBIAS 0.2W US6
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock52,122 |
|
100mA | 50V | 22k | 22k | 70 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 200MHz | 200mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 |
|
|
Toshiba Semiconductor and Storage |
TRANS 2PNP PREBIAS 0.2W US6
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock98,616 |
|
100mA | 50V | 10k | - | 120 @ 1mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 200MHz | 200mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 |
|
|
ON Semiconductor |
TRANS 2NPN PREBIAS 0.187W SOT363
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 187mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock86,580 |
|
100mA | 50V | 47k | 22k | 80 @ 5mA, 10V | 250mV @ 5mA, 10mA | 500nA | - | 187mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-88/SC70-6/SOT-363 |
|
|
Nexperia USA Inc. |
TRANS NPN PREBIAS/PNP 0.6W 6TSOP
- Transistor Type: 1 NPN Pre-Biased, 1 PNP
- Current - Collector (Ic) (Max): 100mA, 1A
- Voltage - Collector Emitter Breakdown (Max): 50V, 20V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 4.7k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V / 220 @ 500mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 280mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 1µA, 100nA
- Frequency - Transition: 185MHz
- Power - Max: 600mW
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: 6-TSOP
|
Package: SC-74, SOT-457 |
Stock28,140 |
|
100mA, 1A | 50V, 20V | 4.7k | 4.7k | 30 @ 10mA, 5V / 220 @ 500mA, 2V | 150mV @ 500µA, 10mA / 280mV @ 100mA, 1A | 1µA, 100nA | 185MHz | 600mW | Surface Mount | SC-74, SOT-457 | 6-TSOP |
|
|
Panasonic Electronic Components |
TRANS PREBIAS DUAL NPN SMINI6
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, Flat Leads
- Supplier Device Package: SMini6-F3-B
|
Package: 6-SMD, Flat Leads |
Stock53,580 |
|
100mA | 50V | 47k | - | 160 @ 5mA, 10V | 250mV @ 500µA, 10mA | 500nA | - | 150mW | Surface Mount | 6-SMD, Flat Leads | SMini6-F3-B |
|
|
Panasonic Electronic Components |
TRANS PREBIAS DUAL NPN MINI6
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 4.7k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: Mini6-G4-B
|
Package: SOT-23-6 |
Stock28,278 |
|
100mA | 50V | 4.7k | 4.7k | 20 @ 5mA, 10V | 250mV @ 500µA, 10mA | 500nA | - | 300mW | Surface Mount | SOT-23-6 | Mini6-G4-B |
|
|
Rohm Semiconductor |
TRANS 2NPN PREBIAS 0.15W EMT5
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: 6-SMD (5 Leads), Flat Lead
- Supplier Device Package: EMT5
|
Package: 6-SMD (5 Leads), Flat Lead |
Stock1,251,060 |
|
100mA | 50V | 4.7k | 47k | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250MHz | 150mW | Surface Mount | 6-SMD (5 Leads), Flat Lead | EMT5 |
|
|
Nexperia USA Inc. |
PIMP31PA/SOT1118/HUSON6
- Transistor Type: 2 PNP Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 1kOhms
- Resistor - Emitter Base (R2) (Ohms): 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 150MHz
- Power - Max: 360mW
- Mounting Type: Surface Mount
- Package / Case: 6-UFDFN Exposed Pad
- Supplier Device Package: 6-HUSON (2x2)
|
Package: - |
Stock9,000 |
|
500mA | 50V | 1kOhms | 10kOhms | 70 @ 50mA, 5V | 100mV @ 2.5mA, 50mA | 500nA | 150MHz | 360mW | Surface Mount | 6-UFDFN Exposed Pad | 6-HUSON (2x2) |
|
|
Diodes Incorporated |
PREBIAS TRANSISTOR SOT363 T&R 10
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7kOhms
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 2.5mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
|
Package: - |
Request a Quote |
|
100mA | 50V | 4.7kOhms | - | 160 @ 1mA, 5V | 300mV @ 250µA, 2.5mA | 500nA (ICBO) | 250MHz | 200mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 |
|
|
Nexperia USA Inc. |
TRANS PREBIAS 2NPN 50V 6TSSOP
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10kOhms
- Resistor - Emitter Base (R2) (Ohms): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: 230MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
|
Package: - |
Request a Quote |
|
100mA | 50V | 10kOhms | 47kOhms | 100 @ 5mA, 5V | 100mV @ 250µA, 5mA | 100nA | 230MHz | 200mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP |
|
|
Toshiba Semiconductor and Storage |
NPN X 2 BRT Q1BSR=22KOHM Q1BER=4
- Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22kOhms
- Resistor - Emitter Base (R2) (Ohms): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-553
- Supplier Device Package: ESV
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Package: - |
Stock270 |
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100mA | 50V | 22kOhms | 47kOhms | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250MHz | 100mW | Surface Mount | SOT-553 | ESV |
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Toshiba Semiconductor and Storage |
PNPX2 BRT Q1BSR2.2KOHM Q1BER47KO
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2kOhms
- Resistor - Emitter Base (R2) (Ohms): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package: USV
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Package: - |
Stock7,896 |
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100mA | 50V | 2.2kOhms | 47kOhms | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 200MHz | 200mW | Surface Mount | 5-TSSOP, SC-70-5, SOT-353 | USV |
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Nexperia USA Inc. |
TRANS PREBIAS 2PNP 50V 6TSSOP
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47kOhms
- Resistor - Emitter Base (R2) (Ohms): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: 180MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
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Package: - |
Request a Quote |
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100mA | 50V | 47kOhms | 47kOhms | 80 @ 5mA, 5V | 150mV @ 500µA, 10mA | 1µA | 180MHz | 300mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP |
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Toshiba Semiconductor and Storage |
PNP + NPN BRT Q1BSR10KOHM Q1BER4
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22kOhms
- Resistor - Emitter Base (R2) (Ohms): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz, 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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Package: - |
Stock9,000 |
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100mA | 50V | 22kOhms | 47kOhms | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 200MHz, 250MHz | 200mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 |
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Nexperia USA Inc. |
PUMD13-Q/SOT363/SC-88
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7kOhms
- Resistor - Emitter Base (R2) (Ohms): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: 230MHz, 180MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
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Package: - |
Request a Quote |
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100mA | 50V | 4.7kOhms | 47kOhms | 100 @ 10mA, 5V | 100mV @ 250µA, 5mA | 1µA | 230MHz, 180MHz | 200mW | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP |