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Central Semiconductor Corp |
TRANS 2PNP 600MA 60V TO78-6
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 600mW
- Frequency - Transition: 200MHz
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-78-6 Metal Can
- Supplier Device Package: TO-78-6
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Package: TO-78-6 Metal Can |
Stock5,888 |
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600mA | 60V | - | - | 100 @ 150mA, 10V | 600mW | 200MHz | - | Through Hole | TO-78-6 Metal Can | TO-78-6 |
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Central Semiconductor Corp |
TRANS NPN DUAL TO78
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-78-6 Metal Can
- Supplier Device Package: TO-78-6
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Package: TO-78-6 Metal Can |
Stock7,136 |
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- | - | - | - | - | - | - | - | Through Hole | TO-78-6 Metal Can | TO-78-6 |
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Toshiba Semiconductor and Storage |
TRANS NPN/PNP 30V 0.5A SM6
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
- Power - Max: 300mW
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: SM6
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Package: SC-74, SOT-457 |
Stock5,232 |
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500mA | 30V | 250mV @ 10mA, 100mA | 100nA (ICBO) | 70 @ 100mA, 1V | 300mW | 200MHz | 150°C (TJ) | Surface Mount | SC-74, SOT-457 | SM6 |
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Analog Devices Inc. |
TRANS 2PNP 36V 0.02A 8DIP
- Transistor Type: 2 PNP (Dual) Matched Pair
- Current - Collector (Ic) (Max): 20mA
- Voltage - Collector Emitter Breakdown (Max): 36V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 100µA, 1mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: 190MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
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Package: 8-DIP (0.300", 7.62mm) |
Stock15,132 |
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20mA | 36V | 100mV @ 100µA, 1mA | - | - | - | 190MHz | -65°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Panasonic Electronic Components |
TRANS NPN/PNP DARL 50V SMINI5
- Transistor Type: NPN, PNP Complementary Darlington
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V
- Power - Max: 150mW
- Frequency - Transition: 150MHz, 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package: SMini5-G1
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Package: 5-TSSOP, SC-70-5, SOT-353 |
Stock4,320 |
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100mA | 50V | 300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA | 100µA | 160 @ 2mA, 10V | 150mW | 150MHz, 80MHz | 150°C (TJ) | Surface Mount | 5-TSSOP, SC-70-5, SOT-353 | SMini5-G1 |
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Panasonic Electronic Components |
TRANS 2PNP 50V 0.1A MINI6
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V
- Power - Max: 300mW
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: MINI6-G1
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Package: SOT-23-6 |
Stock2,464 |
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100mA | 50V | 500mV @ 10mA, 100mA | 100µA | 160 @ 2mA, 10V | 300mW | 80MHz | 150°C (TJ) | Surface Mount | SOT-23-6 | MINI6-G1 |
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Sanken |
TRANS 4NPN DARL 120V 5A 12SIP
- Transistor Type: 4 NPN Darlington (Quad)
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 3mA, 3A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 2V
- Power - Max: 5W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 12-SIP, Exposed Tab
- Supplier Device Package: 12-SIP
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Package: 12-SIP, Exposed Tab |
Stock3,136 |
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5A | 120V | 1.5V @ 3mA, 3A | 10µA (ICBO) | 2000 @ 3A, 2V | 5W | - | 150°C (TJ) | Through Hole | 12-SIP, Exposed Tab | 12-SIP |
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Toshiba Semiconductor and Storage |
TRANS 8NPN DARL 50V 0.5A 18SOL
- Transistor Type: 8 NPN Darlington
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
- Power - Max: 1.31W
- Frequency - Transition: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 18-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 18-SOL
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Package: 18-SOIC (0.295", 7.50mm Width) |
Stock4,608 |
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500mA | 50V | 1.6V @ 500µA, 350mA | - | 1000 @ 350mA, 2V | 1.31W | - | -40°C ~ 85°C (TA) | Surface Mount | 18-SOIC (0.295", 7.50mm Width) | 18-SOL |
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ON Semiconductor |
DUAL TRANSISTOR PNP
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
- Power - Max: 2.27W
- Frequency - Transition: 155MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-WDFN Exposed Pad
- Supplier Device Package: 6-WDFN (2x2)
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Package: 6-WDFN Exposed Pad |
Stock6,224 |
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1A | 60V | 300mV @ 100mA, 2A | 100nA (ICBO) | 120 @ 500mA, 2V | 2.27W | 155MHz | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-WDFN (2x2) |
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Rohm Semiconductor |
TRANS NPN/PNP 50V/12V UMT6
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 150mA, 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V, 12V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA / 250mV @ 10mA, 200mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V / 270 @ 10mA, 2V
- Power - Max: 150mW
- Frequency - Transition: 180MHz, 260MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: UMT6
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock4,816 |
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150mA, 500mA | 50V, 12V | 400mV @ 5mA, 50mA / 250mV @ 10mA, 200mA | 100nA (ICBO) | 120 @ 1mA, 6V / 270 @ 10mA, 2V | 150mW | 180MHz, 260MHz | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | UMT6 |
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Nexperia USA Inc. |
TRANS 2PNP 60V 2A 6HUSON
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1A, 2V
- Power - Max: 370mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: DFN2020D-6
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Package: 6-UDFN Exposed Pad |
Stock4,016 |
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2A | 60V | 500mV @ 200mA, 2A | 100nA (ICBO) | 110 @ 1A, 2V | 370mW | 100MHz | 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | DFN2020D-6 |
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Panasonic Electronic Components |
TRANS 2PNP 15V 0.05A SSSMINI6
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 15V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
- Power - Max: 125mW
- Frequency - Transition: 1.5GHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-963
- Supplier Device Package: SSSMini6-F1
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Package: SOT-963 |
Stock3,984 |
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50mA | 15V | 200mV @ 1mA, 10mA | 100nA (ICBO) | 50 @ 10mA, 1V | 125mW | 1.5GHz | 125°C (TJ) | Surface Mount | SOT-963 | SSSMini6-F1 |
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Diodes Incorporated |
TRANS NPH U-DFN2020-6
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
- Power - Max: 405mW
- Frequency - Transition: 175MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-6 (Type B)
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Package: 6-UDFN Exposed Pad |
Stock2,592 |
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1A | 60V | 240mV @ 50mA, 1A | 100nA (ICBO) | 150 @ 500mA, 2V | 405mW | 175MHz | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type B) |
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Toshiba Semiconductor and Storage |
TRANS 2NPN 50V 0.15A SMV
- Transistor Type: 2 NPN (Dual) Common Emitter
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 300mW
- Frequency - Transition: 80MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
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Package: SC-74A, SOT-753 |
Stock6,384 |
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150mA | 50V | 250mV @ 10mA, 100mA | 100nA (ICBO) | 200 @ 2mA, 6V | 300mW | 80MHz | 125°C (TJ) | Surface Mount | SC-74A, SOT-753 | SMV |
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Nexperia USA Inc. |
TRANS NPN/PNP 15V 0.5A SOT666
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 15V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
- Power - Max: 300mW
- Frequency - Transition: 420MHz, 280MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-666
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Package: SOT-563, SOT-666 |
Stock116,100 |
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500mA | 15V | 250mV @ 50mA, 500mA | 100nA (ICBO) | 150 @ 100mA, 2V | 300mW | 420MHz, 280MHz | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-666 |
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Infineon Technologies |
TRANS 2NPN 45V 0.1A SOT363
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 250mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-6
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Package: 6-VSSOP, SC-88, SOT-363 |
Stock144,912 |
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100mA | 45V | 600mV @ 5mA, 100mA | 15nA (ICBO) | 200 @ 2mA, 5V | 250mW | 250MHz | 150°C (TJ) | Surface Mount | 6-VSSOP, SC-88, SOT-363 | PG-SOT363-6 |
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Central Semiconductor Corp |
TRANS 2NPN/2PNP 40V 0.2A
- Transistor Type: 2 NPN, 2 PNP
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 1V
- Power - Max: 500mW
- Frequency - Transition: 200MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 14-DIP (0.300", 7.62mm)
- Supplier Device Package: TO-116
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Package: 14-DIP (0.300", 7.62mm) |
Stock7,932 |
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200mA | 40V | 250mV @ 1mA, 10mA | 50nA (ICBO) | 70 @ 10mA, 1V | 500mW | 200MHz | -65°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | TO-116 |
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Fairchild/ON Semiconductor |
TRANS 2NPN 40V 0.5A SC70-6
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 300mW
- Frequency - Transition: 300MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-70-6
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock92,400 |
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500mA | 40V | 1V @ 50mA, 500mA | 10nA (ICBO) | 100 @ 150mA, 10V | 300mW | 300MHz | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-70-6 |
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ON Semiconductor |
TRANS NPN/PNP 40V 0.2A SC88
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
- Power - Max: 150mW
- Frequency - Transition: 300MHz, 250MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock6,451,608 |
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200mA | 40V | 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA | - | 100 @ 10mA, 1V | 150mW | 300MHz, 250MHz | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-88/SC70-6/SOT-363 |
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Toshiba Semiconductor and Storage |
NPN + NPN IND. TRANSISTOR VCEO20
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 300mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
- Power - Max: 200mW
- Frequency - Transition: 30MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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Package: - |
Stock16,884 |
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300mA | 20V | 100mV @ 3mA, 30A | 100nA (ICBO) | 350 @ 4mA, 2V | 200mW | 30MHz | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 |
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Panjit International Inc. |
SOT-363, TRANSISTOR
- Transistor Type: 1 NPN, 1 PNP Complementary
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 65V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V / 220 @ 2mA, 5V
- Power - Max: 225mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
|
Package: - |
Stock4,962 |
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100mA | 65V | 600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA | 15nA (ICBO) | 200 @ 2mA, 5V / 220 @ 2mA, 5V | 225mW | 100MHz | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 |
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Microchip Technology |
TRANSISTOR DUAL SMALL-SIGNAL BJT
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 30mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
- Power - Max: 350mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, No Lead
- Supplier Device Package: 6-SMD
|
Package: - |
Request a Quote |
|
30mA | 60V | 300mV @ 100µA, 1mA | 10µA (ICBO) | 300 @ 1mA, 5V | 350mW | - | -65°C ~ 200°C (TJ) | Surface Mount | 6-SMD, No Lead | 6-SMD |
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onsemi |
POWER TRANSISTOR 100 V, 3 A DUAL
- Transistor Type: -
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
- Current - Collector Cutoff (Max): 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
- Power - Max: 2.7W
- Frequency - Transition: 3MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-1023, 4-LFPAK
- Supplier Device Package: LFPAK4 (5x6)
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Package: - |
Stock8,940 |
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3A | 100V | 1.2V @ 375mA, 3A | 50µA | 25 @ 1A, 4V | 2.7W | 3MHz | -65°C ~ 150°C (TJ) | Surface Mount | SOT-1023, 4-LFPAK | LFPAK4 (5x6) |
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Panjit International Inc. |
DUAL PNP GENERAL PURPOSE SWITCHI
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
- Power - Max: 200mW
- Frequency - Transition: 250MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
|
Package: - |
Stock20,550 |
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200mA | 40V | 400mV @ 5mA, 50mA | 50nA | 100 @ 10mA, 1V | 200mW | 250MHz | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
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Central Semiconductor Corp |
TRANS 2NPN/2PNP 250V 0.5A
- Transistor Type: 2 NPN, 2 PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 250V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 2mA, 20mA
- Current - Collector Cutoff (Max): 250nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
- Power - Max: 750mW
- Frequency - Transition: 50MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 14-DIP (0.300", 7.62mm)
- Supplier Device Package: TO-116
|
Package: - |
Request a Quote |
|
500mA | 250V | 700mV @ 2mA, 20mA | 250nA (ICBO) | 25 @ 30mA, 10V | 750mW | 50MHz | -65°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | TO-116 |
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Microchip Technology |
TRANSISTOR QUAD SMALL-SIGNAL BJT
- Transistor Type: 4 PNP (Quad)
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 1W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, No Lead
- Supplier Device Package: 6-SMD
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Package: - |
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600mA | 60V | 1.6V @ 50mA, 500mA | 10µA (ICBO) | 100 @ 150mA, 10V | 1W | - | -65°C ~ 200°C (TJ) | Surface Mount | 6-SMD, No Lead | 6-SMD |
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Diodes Incorporated |
GENERAL PURPOSE TRANSISTOR SOT56
- Transistor Type: 1 NPN, 1 PNP Complementary
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 150mW
- Frequency - Transition: 300MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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Package: - |
Stock9,000 |
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100mA | 45V | 600mV @ 5mA, 100mA | 15nA (ICBO) | 200 @ 2mA, 5V | 150mW | 300MHz | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
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Linear Integrated Systems, Inc. |
TIGHTLY MATCHED, MONOLITHIC DUAL
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 10mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 100µA, 1mA
- Current - Collector Cutoff (Max): 200pA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
- Power - Max: 500mW
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-23-6
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Package: - |
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10mA | 45V | 500mV @ 100µA, 1mA | 200pA (ICBO) | 150 @ 1mA, 5V | 500mW | 200MHz | 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 |