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Infineon Technologies |
TRANS NPN/PNP 65V 0.1A SOT363-6
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 65V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 250mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-6
|
Package: 6-VSSOP, SC-88, SOT-363 |
Stock3,056 |
|
100mA | 65V | 650mV @ 5mA, 100mA | 15nA (ICBO) | 200 @ 2mA, 5V | 250mW | 250MHz | 150°C (TJ) | Surface Mount | 6-VSSOP, SC-88, SOT-363 | PG-SOT363-6 |
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Nexperia USA Inc. |
TRANS GEN PURPOSE SC-88
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Stock6,128 |
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- | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
TRANS 2PNP 12V 5A SOT223
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 12V
- Vce Saturation (Max) @ Ib, Ic: 380mV @ 50mA, 5A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V
- Power - Max: 2.75W
- Frequency - Transition: 115MHz
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
|
Package: TO-261-4, TO-261AA |
Stock129,000 |
|
5A | 12V | 380mV @ 50mA, 5A | 100nA | 250 @ 500mA, 2V | 2.75W | 115MHz | - | Surface Mount | TO-261-4, TO-261AA | SOT-223 |
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Panasonic Electronic Components |
TRANS 2NPN 20V 0.015A SMINI6
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 15mA
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 6V
- Power - Max: 150mW
- Frequency - Transition: 650MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SMINI6-G1
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock2,864 |
|
15mA | 20V | - | - | 40 @ 1mA, 6V | 150mW | 650MHz | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SMINI6-G1 |
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ON Semiconductor |
TRANS NPN/PNP 60V 0.1A SOT563
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
- Power - Max: 500mW
- Frequency - Transition: 180MHz, 140MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
|
Package: SOT-563, SOT-666 |
Stock6,256 |
|
100mA | 60V | 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA | 500nA (ICBO) | 120 @ 1mA, 6V | 500mW | 180MHz, 140MHz | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
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Diodes Incorporated |
TRANS NPN/PNP DARL 120V 1A SM8
- Transistor Type: NPN, PNP Darlington (Dual)
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 5V
- Power - Max: 2.75W
- Frequency - Transition: 150MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-223-8
- Supplier Device Package: SM8
|
Package: SOT-223-8 |
Stock53,376 |
|
1A | 120V | 1.5V @ 1mA, 1A | 10µA | 2000 @ 1A, 5V | 2.75W | 150MHz | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-8 | SM8 |
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|
Infineon Technologies |
TRANS 2PNP 40V 0.2A SC74-6
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
- Power - Max: 330mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: PG-SC74-6
|
Package: SC-74, SOT-457 |
Stock6,432 |
|
200mA | 40V | 400mV @ 5mA, 50mA | 50nA (ICBO) | 100 @ 10mA, 1V | 330mW | 250MHz | 150°C (TJ) | Surface Mount | SC-74, SOT-457 | PG-SC74-6 |
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Diodes Incorporated |
TRANS 2NPN/2PNP 20V 2.5A SOT223
- Transistor Type: 2 NPN, 2 PNP (H-Bridge)
- Current - Collector (Ic) (Max): 2.5A
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 2.5A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
- Power - Max: 1.25W
- Frequency - Transition: 140MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-223-8
- Supplier Device Package: SOT-223
|
Package: SOT-223-8 |
Stock546,480 |
|
2.5A | 20V | 200mV @ 50mA, 2.5A | 100µA | 200 @ 2A, 2V | 1.25W | 140MHz | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-8 | SOT-223 |
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|
ON Semiconductor |
TRANS 2NPN 40V 0.2A SOT563
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
- Power - Max: 500mW
- Frequency - Transition: 300MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
|
Package: SOT-563, SOT-666 |
Stock941,640 |
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200mA | 40V | 300mV @ 5mA, 50mA | - | 100 @ 10mA, 1V | 500mW | 300MHz | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
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Nexperia USA Inc. |
TRANS 30V 2A 6HUSON
- Transistor Type: -
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 290mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
- Power - Max: 510mW
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: DFN2020-6
|
Package: 6-UDFN Exposed Pad |
Stock4,640 |
|
2A | 30V | 290mV @ 200mA, 2A | 100nA (ICBO) | 200 @ 1A, 2V | 510mW | 120MHz | 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | DFN2020-6 |
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|
Diodes Incorporated |
TRANS 2PNP 40V 0.2A SOT963
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
- Power - Max: 300mW
- Frequency - Transition: 300MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-963
- Supplier Device Package: SOT-963
|
Package: SOT-963 |
Stock3,600 |
|
200mA | 40V | 400mV @ 5mA, 50mA | 50nA (ICBO) | 100 @ 10mA, 1V | 300mW | 300MHz | -55°C ~ 150°C (TJ) | Surface Mount | SOT-963 | SOT-963 |
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|
Diodes Incorporated |
TRANS 2NPN 160V 0.2A SOT26
- Transistor Type: 2 NPN (Dual) Matched Pair
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 160V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Power - Max: 300mW
- Frequency - Transition: 300MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-26
|
Package: SOT-23-6 |
Stock29,418 |
|
200mA | 160V | 200mV @ 5mA, 50mA | 50nA (ICBO) | 80 @ 10mA, 5V | 300mW | 300MHz | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-26 |
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Nexperia USA Inc. |
TRANS 2PNP 45V 0.1A SOT-353
- Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 300mW
- Frequency - Transition: 175MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package: 5-TSSOP
|
Package: 5-TSSOP, SC-70-5, SOT-353 |
Stock7,552 |
|
100mA | 45V | 400mV @ 5mA, 100mA | 15nA (ICBO) | 200 @ 2mA, 5V | 300mW | 175MHz | 150°C (TJ) | Surface Mount | 5-TSSOP, SC-70-5, SOT-353 | 5-TSSOP |
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Central Semiconductor Corp |
TRANS 2PNP 40V 0.2A SOD-363
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
- Power - Max: 350mW
- Frequency - Transition: 250MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock22,722 |
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200mA | 40V | 400mV @ 5mA, 50mA | - | 100 @ 10mA, 1V | 350mW | 250MHz | -65°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 |
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Toshiba Semiconductor and Storage |
TRANS 2NPN 50V 0.15A ES6
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
- Power - Max: 100mW
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
|
Package: SOT-563, SOT-666 |
Stock35,664 |
|
150mA | 50V | 250mV @ 10mA, 100mA | 100nA (ICBO) | 120 @ 2mA, 6V | 100mW | 80MHz | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 |
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|
Panasonic Electronic Components |
TRANS NPN/PNP 50V 0.1A SMINI5
- Transistor Type: NPN, PNP (Emitter Coupled)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
- Power - Max: 150mW
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 5-SMD, Flat Leads
- Supplier Device Package: SMini5-F3-B
|
Package: 5-SMD, Flat Leads |
Stock24,168 |
|
100mA | 50V | 300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA | 100µA | 210 @ 2mA, 10V | 150mW | 150MHz | 150°C (TJ) | Surface Mount | 5-SMD, Flat Leads | SMini5-F3-B |
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Panasonic Electronic Components |
TRANS 2NPN 50V 0.1A SMINI6
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
- Power - Max: 150mW
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, Flat Leads
- Supplier Device Package: SMini6-F3-B
|
Package: 6-SMD, Flat Leads |
Stock27,774 |
|
100mA | 50V | 300mV @ 10mA, 100mA | 100µA | 210 @ 2mA, 10V | 150mW | 150MHz | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | SMini6-F3-B |
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Rohm Semiconductor |
PNP+PNP GENERAL PURPOSE AMPLIFIC
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
- Power - Max: 150mW
- Frequency - Transition: 140MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: UMT6
|
Package: - |
Stock18,066 |
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150mA | 50V | 500mV @ 5mA, 50mA | 100nA (ICBO) | 120 @ 1mA, 6V | 150mW | 140MHz | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | UMT6 |
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onsemi |
IC
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
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Microchip Technology |
NPN TRANSISTOR
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 900mV @ 30mA, 300mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
- Power - Max: 600mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-78-6 Metal Can
- Supplier Device Package: TO-78-6
|
Package: - |
Request a Quote |
|
600mA | 40V | 900mV @ 30mA, 300mA | 10µA (ICBO) | 40 @ 150mA, 10V | 600mW | - | -65°C ~ 200°C (TJ) | Through Hole | TO-78-6 Metal Can | TO-78-6 |
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|
Microchip Technology |
NPN TRANSISTOR
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 600mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-78-6 Metal Can
- Supplier Device Package: TO-78-6
|
Package: - |
Request a Quote |
|
600mA | 60V | 1.6V @ 50mA, 500mA | 10µA (ICBO) | 100 @ 150mA, 10V | 600mW | - | -65°C ~ 175°C (TJ) | Through Hole | TO-78-6 Metal Can | TO-78-6 |
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Nexperia USA Inc. |
TRANS 2NPN 65V 0.1A 6TSSOP
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 65V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 200mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
|
Package: - |
Request a Quote |
|
100mA | 65V | 300mV @ 5mA, 100mA | 15nA (ICBO) | 200 @ 2mA, 5V | 200mW | 100MHz | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP |
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|
Microchip Technology |
DUAL RH SMALL-SIGNAL BJT
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
- Power - Max: 350mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-78-6 Metal Can
- Supplier Device Package: TO-78-6
|
Package: - |
Request a Quote |
|
50mA | 60V | 250mV @ 100µA, 1mA | 10µA (ICBO) | 150 @ 1mA, 5V | 350mW | - | -65°C ~ 200°C (TJ) | Through Hole | TO-78-6 Metal Can | TO-78-6 |
|
|
Microchip Technology |
DUAL RH SMALL-SIGNAL BJT
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
- Power - Max: 350mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, No Lead
- Supplier Device Package: U
|
Package: - |
Request a Quote |
|
50mA | 60V | 250mV @ 100µA, 1mA | 10µA (ICBO) | 150 @ 1mA, 5V | 350mW | - | -65°C ~ 200°C (TJ) | Surface Mount | 6-SMD, No Lead | U |
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Central Semiconductor Corp |
TRANS 2NPN 60V 0.2A SOT363
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
- Power - Max: 350mW
- Frequency - Transition: 300MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
|
Package: - |
Stock68,376 |
|
200mA | 40V | 300mV @ 5mA, 50mA | - | 100 @ 10mA, 1V | 350mW | 300MHz | -65°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SOT-363 |
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|
onsemi |
POWER BIPOLAR TRANSISTOR, PNP
- Transistor Type: 4 PNP (Quad)
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 150V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
- Current - Collector Cutoff (Max): 250nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 10mA, 10V
- Power - Max: 750mW
- Frequency - Transition: 70MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 14-DIP (0.300", 7.62mm)
- Supplier Device Package: 14-PDIP
|
Package: - |
Request a Quote |
|
500mA | 150V | 500mV @ 2mA, 20mA | 250nA (ICBO) | 35 @ 10mA, 10V | 750mW | 70MHz | -55°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-PDIP |
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|
Microchip Technology |
DUAL SMALL-SIGNAL BJT
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
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Nexperia USA Inc. |
PBSS4260PANS-Q/SOT1118/HUSON6
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 1A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V
- Power - Max: 510mW
- Frequency - Transition: 140MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: DFN2020D-6
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Package: - |
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2A | 60V | 350mV @ 200mA, 1A | 100nA | 250 @ 100mA, 2V | 510mW | 140MHz | 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | DFN2020D-6 |