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Infineon Technologies |
TRANS NPN/PNP 40V 0.2A SOT363-6
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
- Power - Max: 250mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-6
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Package: 6-VSSOP, SC-88, SOT-363 |
Stock2,432 |
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200mA | 40V | 400mV @ 5mA, 50mA | 50nA (ICBO) | 100 @ 10mA, 1V | 250mW | 250MHz | 150°C (TJ) | Surface Mount | 6-VSSOP, SC-88, SOT-363 | PG-SOT363-6 |
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NXP |
TRANS NPN/PNP 45V 0.1A 6DFN
- Transistor Type: NPN, PNP Complementary
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 230mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 10-XFDFN Exposed Pad
- Supplier Device Package: DFN1010B-6
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Package: 10-XFDFN Exposed Pad |
Stock2,368 |
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100mA | 45V | 100mV @ 500µA, 10mA | 15nA (ICBO) | 200 @ 2mA, 5V | 230mW | 100MHz | 150°C (TJ) | Surface Mount | 10-XFDFN Exposed Pad | DFN1010B-6 |
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Microsemi Corporation |
TRANS 2PNP 60V 0.05A
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
- Power - Max: 350mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-78-6 Metal Can
- Supplier Device Package: TO-78-6
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Package: TO-78-6 Metal Can |
Stock5,616 |
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50mA | 60V | 250mV @ 100µA, 1mA | 10µA (ICBO) | 300 @ 1mA, 5V | 350mW | - | -65°C ~ 200°C (TJ) | Through Hole | TO-78-6 Metal Can | TO-78-6 |
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ON Semiconductor |
TRANS 7NPN DARL 50V 0.5A 16SO
- Transistor Type: 7 NPN Darlington
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 16-SOIC
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Package: 16-SOIC (0.154", 3.90mm Width) |
Stock21,684 |
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500mA | 50V | 1.6V @ 500µA, 350mA | - | 1000 @ 350mA, 2V | - | - | 150°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
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Diodes Incorporated |
TRANS 2NPN DARL 120V 1A SM8
- Transistor Type: 2 NPN Darlington (Dual)
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 5V
- Power - Max: 2.75W
- Frequency - Transition: 150MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-223-8
- Supplier Device Package: SM8
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Package: SOT-223-8 |
Stock7,712 |
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1A | 120V | 1.5V @ 1mA, 1A | 10µA | 2000 @ 1A, 5V | 2.75W | 150MHz | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-8 | SM8 |
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Infineon Technologies |
TRANS 2NPN 65V 0.1A SC74-6
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 65V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 250mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: PG-SC74-6
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Package: SC-74, SOT-457 |
Stock5,440 |
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100mA | 65V | 600mV @ 5mA, 100mA | 15nA (ICBO) | 200 @ 2mA, 5V | 250mW | 250MHz | 150°C (TJ) | Surface Mount | SC-74, SOT-457 | PG-SC74-6 |
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Infineon Technologies |
TRANS NPN/PNP 45V 0.1A SOT363-6
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 250mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-6
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Package: 6-VSSOP, SC-88, SOT-363 |
Stock7,008 |
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100mA | 45V | 650mV @ 5mA, 100mA | 15nA (ICBO) | 200 @ 2mA, 5V | 250mW | 250MHz | 150°C (TJ) | Surface Mount | 6-VSSOP, SC-88, SOT-363 | PG-SOT363-6 |
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Infineon Technologies |
TRANS NPN/PNP 45V 0.1A SOT363-6
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 250mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-6
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Package: 6-VSSOP, SC-88, SOT-363 |
Stock3,552 |
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100mA | 45V | 650mV @ 5mA, 100mA | 15nA (ICBO) | 200 @ 2mA, 5V | 250mW | 250MHz | 150°C (TJ) | Surface Mount | 6-VSSOP, SC-88, SOT-363 | PG-SOT363-6 |
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Microsemi Corporation |
TRANS 4PNP 60V 0.6A TO116
- Transistor Type: 4 PNP (Quad)
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 1.5W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 14-DIP (0.300", 7.62mm)
- Supplier Device Package: -
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Package: 14-DIP (0.300", 7.62mm) |
Stock6,256 |
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600mA | 60V | 1.6V @ 50mA, 500mA | 10µA (ICBO) | 100 @ 150mA, 10V | 1.5W | - | -65°C ~ 200°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | - |
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Microsemi Corporation |
TRANS 2PNP 60V 0.05A TO-78
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
- Power - Max: 350mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-78-6 Metal Can
- Supplier Device Package: TO-78-6
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Package: TO-78-6 Metal Can |
Stock3,936 |
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50mA | 60V | 250mV @ 100µA, 1mA | 10µA (ICBO) | 150 @ 1mA, 5V | 350mW | - | -65°C ~ 200°C (TJ) | Through Hole | TO-78-6 Metal Can | TO-78-6 |
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ON Semiconductor |
TRANS 2NPN 30V 1.5A 6CPH
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 15mA, 750mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
- Power - Max: 1.2W
- Frequency - Transition: 500MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: 6-CPH
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Package: SC-74, SOT-457 |
Stock6,000 |
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1.5A | 30V | 250mV @ 15mA, 750mA | 100nA (ICBO) | 200 @ 100mA, 2V | 1.2W | 500MHz | 150°C (TJ) | Surface Mount | SC-74, SOT-457 | 6-CPH |
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Rohm Semiconductor |
TRANS 2NPN 50V 3A TSMT5
- Transistor Type: 2 NPN (Dual) Common Emitter
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 3V
- Power - Max: 1.25W
- Frequency - Transition: 320MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-5 Thin, TSOT-23-5
- Supplier Device Package: TSMT5
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Package: SOT-23-5 Thin, TSOT-23-5 |
Stock36,000 |
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3A | 50V | 350mV @ 50mA, 1A | 1µA (ICBO) | 180 @ 50mA, 3V | 1.25W | 320MHz | 150°C (TJ) | Surface Mount | SOT-23-5 Thin, TSOT-23-5 | TSMT5 |
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Rohm Semiconductor |
TRANS 2PNP 50V 0.15A 6EMT
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
- Power - Max: 150mW
- Frequency - Transition: 140MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: EMT6
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Package: SOT-563, SOT-666 |
Stock88,320 |
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150mA | 50V | 500mV @ 5mA, 50mA | 100nA (ICBO) | 120 @ 1mA, 6V | 150mW | 140MHz | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | EMT6 |
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Toshiba Semiconductor and Storage |
TRANS 2NPN 120V 0.1A SMV
- Transistor Type: 2 NPN (Dual) Common Base
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 300mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
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Package: SC-74A, SOT-753 |
Stock7,856 |
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100mA | 120V | 300mV @ 1mA, 10mA | 100nA (ICBO) | 200 @ 2mA, 6V | 300mW | 100MHz | 150°C (TJ) | Surface Mount | SC-74A, SOT-753 | SMV |
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Diodes Incorporated |
TRANS NPN/PNP 40V/60V 0.6A SOT26
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 40V, 60V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 300mW
- Frequency - Transition: 300MHz, 200MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-26
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Package: SOT-23-6 |
Stock2,672 |
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600mA | 40V, 60V | 1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA | 10nA (ICBO) | 100 @ 150mA, 10V | 300mW | 300MHz, 200MHz | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-26 |
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Toshiba Semiconductor and Storage |
TRANS NPN/PNP 50V 0.15A ES6
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
- Power - Max: 100mW
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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Package: SOT-563, SOT-666 |
Stock34,614 |
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150mA | 50V | 250mV @ 10mA, 100mA | 100nA (ICBO) | 120 @ 2mA, 6V | 100mW | 80MHz | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 |
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Nexperia USA Inc. |
TRANS NPN/PNP 65V 0.1A 6TSSOP
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 65V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 300mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP, SC-88
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock97,692 |
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100mA | 65V | 300mV @ 5mA, 100mA | 15nA (ICBO) | 200 @ 2mA, 5V | 300mW | 100MHz | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88 |
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Analog Devices Inc. |
TRANS 2NPN 45V 0.025A TO78-6
- Transistor Type: 2 NPN (Dual) Matched Pair
- Current - Collector (Ic) (Max): 25mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 400nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: 500mW
- Frequency - Transition: 450MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-78-6 Metal Can
- Supplier Device Package: TO-78-6
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Package: TO-78-6 Metal Can |
Stock4,048 |
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25mA | 45V | 800mV @ 1mA, 10mA | 400nA | - | 500mW | 450MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-78-6 Metal Can | TO-78-6 |
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Sanyo |
PNP/NPN EPITAXIAL PLANAR SILICON
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Microchip Technology |
DRIVER - MEDIUM CURRENT ARRAY, H
- Transistor Type: 8 NPN Darlington
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 1.9V @ 600µA, 500mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 125°C (TA)
- Mounting Type: Through Hole
- Package / Case: 18-CDIP (0.300", 7.62mm)
- Supplier Device Package: 18-CERDIP
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Package: - |
Request a Quote |
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600mA | 50V | 1.9V @ 600µA, 500mA | - | - | - | - | -55°C ~ 125°C (TA) | Through Hole | 18-CDIP (0.300", 7.62mm) | 18-CERDIP |
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Diodes Incorporated |
PWR LOW SAT TRANSISTOR SM-8 T&R
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 400mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 150mA, 2V
- Power - Max: 2.25W
- Frequency - Transition: 130MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-223-8
- Supplier Device Package: SM8
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Package: - |
Request a Quote |
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500mA | 120V | 500mV @ 5mA, 400mA | 100nA (ICBO) | 500 @ 150mA, 2V | 2.25W | 130MHz | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-8 | SM8 |
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Microchip Technology |
DRIVER - MEDIUM CURRENT ARRAY, H
- Transistor Type: 8 NPN Darlington
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 95V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 20-CLCC
- Supplier Device Package: 20-CLCC (8.89x8.89)
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Package: - |
Request a Quote |
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500mA | 95V | 1.6V @ 500µA, 350mA | - | 1000 @ 350mA, 2V | - | - | -55°C ~ 125°C (TA) | Surface Mount | 20-CLCC | 20-CLCC (8.89x8.89) |
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Microchip Technology |
DUAL SMALL-SIGNAL BJT
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
- Power - Max: 350mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-78-6 Metal Can
- Supplier Device Package: TO-78-6
|
Package: - |
Request a Quote |
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50mA | 60V | 250mV @ 100µA, 1mA | 10µA (ICBO) | 150 @ 1mA, 5V | 350mW | - | -65°C ~ 200°C (TJ) | Through Hole | TO-78-6 Metal Can | TO-78-6 |
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Microchip Technology |
TRANSISTOR DUAL SMALL-SIGNAL BJT
- Transistor Type: 1 NPN, 1 PNP
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 600mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, No Lead
- Supplier Device Package: 6-SMD
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Package: - |
Request a Quote |
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600mA | 40V | 400mV @ 15mA, 150mA | 10µA (ICBO) | 100 @ 150mA, 10V | 600mW | - | -65°C ~ 200°C (TJ) | Surface Mount | 6-SMD, No Lead | 6-SMD |
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Linear Integrated Systems, Inc. |
HIGH VOLTAGE, SUPER BETA, MONOLI
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 10mA
- Voltage - Collector Emitter Breakdown (Max): 2V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 100µA, 1mA
- Current - Collector Cutoff (Max): 100pA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 10µA, 1V
- Power - Max: 500mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-78-6 Metal Can
- Supplier Device Package: TO-78-6
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Package: - |
Stock30 |
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10mA | 2V | 500mV @ 100µA, 1mA | 100pA (ICBO) | 1500 @ 10µA, 1V | 500mW | 100MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-78-6 Metal Can | TO-78-6 |
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Microchip Technology |
DUAL RH SMALL-SIGNAL BJT
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
- Power - Max: 350mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, No Lead
- Supplier Device Package: U
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Package: - |
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50mA | 60V | 250mV @ 100µA, 1mA | 10µA (ICBO) | 150 @ 1mA, 5V | 350mW | - | -65°C ~ 200°C (TJ) | Surface Mount | 6-SMD, No Lead | U |
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onsemi |
TRANS NPN DUAL 45V 100MA SOT-363
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
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Diodes Incorporated |
SS LOW SAT TRANSISTOR POWERDI506
- Transistor Type: 1 NPN, 1 PNP
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A / 325mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 10V / 170 @ 500mA, 10V
- Power - Max: 1.47W
- Frequency - Transition: 130MHz, 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: PowerDI5060-8 (Type UXD)
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Package: - |
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3A | 100V | 330mV @ 300mA, 3A / 325mV @ 200mA, 2A | 100nA | 150 @ 500mA, 10V / 170 @ 500mA, 10V | 1.47W | 130MHz, 100MHz | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 (Type UXD) |