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Central Semiconductor Corp |
TRANSISTOR DUAL TO78
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-78-6 Metal Can
- Supplier Device Package: TO-78-6
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Package: TO-78-6 Metal Can |
Stock4,992 |
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- | - | - | - | - | - | - | - | Through Hole | TO-78-6 Metal Can | TO-78-6 |
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Analog Devices Inc. |
TRANS 2PNP 36V 0.02A TO78-6
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 20mA
- Voltage - Collector Emitter Breakdown (Max): 36V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 100µA, 1mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: 500mW
- Frequency - Transition: 190MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-78-6 Metal Can
- Supplier Device Package: TO-78-6
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Package: TO-78-6 Metal Can |
Stock7,136 |
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20mA | 36V | 100mV @ 100µA, 1mA | - | - | 500mW | 190MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-78-6 Metal Can | TO-78-6 |
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ON Semiconductor |
TRANS 2PNP 60V 0.1A SOT563
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
- Power - Max: 500mW
- Frequency - Transition: 140MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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Package: SOT-563, SOT-666 |
Stock4,000 |
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100mA | 60V | 500mV @ 5mA, 50mA | 500nA (ICBO) | 120 @ 1mA, 6V | 500mW | 140MHz | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-563 |
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Diodes Incorporated |
TRANS NPN/PNP DARL 60V 1.75A SM8
- Transistor Type: NPN, PNP Darlington (Dual)
- Current - Collector (Ic) (Max): 1.75A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 1.28V @ 2mA, 1.75A
- Current - Collector Cutoff (Max): 500nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 500mA, 5V / 2000 @ 500mA, 5V
- Power - Max: 2.75W
- Frequency - Transition: 140MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-223-8
- Supplier Device Package: SM8
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Package: SOT-223-8 |
Stock7,136 |
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1.75A | 60V | 1.28V @ 2mA, 1.75A | 500nA | 5000 @ 500mA, 5V / 2000 @ 500mA, 5V | 2.75W | 140MHz | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-8 | SM8 |
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Infineon Technologies |
TRANS 2PNP 65V 0.1A SOT363
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 65V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 250mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-6
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Package: 6-VSSOP, SC-88, SOT-363 |
Stock7,184 |
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100mA | 65V | 650mV @ 5mA, 100mA | 15nA (ICBO) | 200 @ 2mA, 5V | 250mW | 250MHz | 150°C (TJ) | Surface Mount | 6-VSSOP, SC-88, SOT-363 | PG-SOT363-6 |
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Microsemi Corporation |
TRANS 2NPN 60V 0.03A
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 30mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
- Power - Max: 350mW
- Frequency - Transition: -
- Operating Temperature: 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: 3-SMD
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Package: 3-SMD, No Lead |
Stock3,472 |
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30mA | 60V | 300mV @ 100µA, 1mA | 10µA (ICBO) | 150 @ 1mA, 5V | 350mW | - | 200°C (TJ) | Surface Mount | 3-SMD, No Lead | 3-SMD |
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Sanken |
TRANS 120V 2A 12SIP
- Transistor Type: -
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 15-SIP
- Supplier Device Package: 15-SIP
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Package: 15-SIP |
Stock5,376 |
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2A | 120V | - | - | - | - | - | 150°C (TJ) | Through Hole | 15-SIP | 15-SIP |
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Diodes Incorporated |
TRANS 2NPN 50V 1A SOT23-6
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 270mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
- Power - Max: 1.1W
- Frequency - Transition: 215MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-26
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Package: SOT-23-6 |
Stock46,500 |
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1A | 50V | 270mV @ 50mA, 1A | 10nA (ICBO) | 75 @ 1A, 2V | 1.1W | 215MHz | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-26 |
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ON Semiconductor |
TRANS 2NPN 40V 3A 8SOIC
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 115mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
- Power - Max: 653mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock1,306,656 |
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3A | 40V | 115mV @ 200mA, 2A | 100nA (ICBO) | 180 @ 1A, 2V | 653mW | 100MHz | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Nexperia USA Inc. |
TRANS NPN/PNP 40V 0.1A SOT666
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
- Power - Max: 300mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-666
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Package: SOT-563, SOT-666 |
Stock3,200 |
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100mA | 40V | 200mV @ 5mA, 50mA | 100nA (ICBO) | 120 @ 1mA, 6V | 300mW | 100MHz | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-666 |
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Nexperia USA Inc. |
TRANS 2NPN 45V 0.1A SOT666
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 300mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-666
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Package: SOT-563, SOT-666 |
Stock6,624 |
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100mA | 45V | 300mV @ 5mA, 100mA | 15nA (ICBO) | 200 @ 2mA, 5V | 300mW | 100MHz | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SOT-666 |
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Diodes Incorporated |
TRANS 2NPN/2PNP 40V 2A SOT223
- Transistor Type: 2 NPN, 2 PNP (H-Bridge)
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
- Power - Max: 1.25W
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-223-8
- Supplier Device Package: SOT-223
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Package: SOT-223-8 |
Stock15,312 |
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2A | 40V | 750mV @ 50mA, 2A | 100nA (ICBO) | 200 @ 1A, 2V | 1.25W | 100MHz | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-8 | SOT-223 |
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Rohm Semiconductor |
TRANS NPN/PNP 50V 0.15A 6EMT
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
- Power - Max: 150mW
- Frequency - Transition: 180MHz, 140MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: EMT6
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Package: SOT-563, SOT-666 |
Stock1,752,180 |
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150mA | 50V | 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA | 100nA (ICBO) | 120 @ 1mA, 6V | 150mW | 180MHz, 140MHz | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | EMT6 |
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Rohm Semiconductor |
TRANS 2NPN 12V 0.5A 6UMT
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 12V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V
- Power - Max: 150mW
- Frequency - Transition: 320MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: UMT6
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Package: 6-TSSOP, SC-88, SOT-363 |
Stock113,160 |
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500mA | 12V | 250mV @ 10mA, 200mA | 100nA (ICBO) | 270 @ 10mA, 2V | 150mW | 320MHz | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | UMT6 |
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Diodes Incorporated |
TRANS 2NPN 50V 4A 8DFN
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
- Power - Max: 1.7W
- Frequency - Transition: 165MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-DFN (3x2)
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Package: 8-WDFN Exposed Pad |
Stock34,800 |
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4A | 50V | 320mV @ 200mA, 4A | 100nA | 100 @ 2A, 2V | 1.7W | 165MHz | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN Exposed Pad | 8-DFN (3x2) |
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STMicroelectronics |
TRANS NPN/PNP 400V 3A 8DIP
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 400V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 700mA, 5V
- Power - Max: 3W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-DIP
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Package: 8-DIP (0.300", 7.62mm) |
Stock179,640 |
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3A | 400V | 500mV @ 200mA, 1A | 100µA | 18 @ 700mA, 5V | 3W | - | 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
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Panasonic Electronic Components |
TRANS 2NPN 50V 0.1A MINI6
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
- Power - Max: 300mW
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: Mini6-G4-B
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Package: SOT-23-6 |
Stock611,286 |
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100mA | 50V | 300mV @ 10mA, 100mA | 100µA | 210 @ 2mA, 10V | 300mW | 150MHz | 150°C (TJ) | Surface Mount | SOT-23-6 | Mini6-G4-B |
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Central Semiconductor Corp |
TRANS 4PNP 40V 0.05A
- Transistor Type: 4 PNP (Quad)
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 10mA, 5V
- Power - Max: 500mW
- Frequency - Transition: 60MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 14-DIP (0.300", 7.62mm)
- Supplier Device Package: TO-116
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Package: - |
Request a Quote |
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50mA | 40V | 250mV @ 100µA, 1mA | 10nA (ICBO) | 125 @ 10mA, 5V | 500mW | 60MHz | -65°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | TO-116 |
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Microchip Technology |
DUAL SMALL-SIGNAL BJT
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
- Power - Max: 350mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-78-6 Metal Can
- Supplier Device Package: TO-78-6
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Package: - |
Request a Quote |
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50mA | 60V | 250mV @ 100µA, 1mA | 10µA (ICBO) | 150 @ 1mA, 5V | 350mW | - | -65°C ~ 200°C (TJ) | Through Hole | TO-78-6 Metal Can | TO-78-6 |
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Nexperia USA Inc. |
TRANS 2NPN 65V 0.1A 6TSSOP
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 65V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 270mW
- Frequency - Transition: 100MHz
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
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Package: - |
Request a Quote |
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100mA | 65V | 300mV @ 5mA, 100mA | 15nA (ICBO) | 200 @ 2mA, 5V | 270mW | 100MHz | 175°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP |
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Diodes Incorporated |
SS LOW SAT TRANSISTOR U-DFN2020-
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 100mA, 2V
- Power - Max: 510mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-6
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Package: - |
Stock17,100 |
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2A | 60V | 450mV @ 200mA, 2A | 100nA (ICBO) | 170 @ 100mA, 2V | 510mW | - | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 |
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Diotec Semiconductor |
IC
- Transistor Type: 1 NPN, 1 PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
- Power - Max: 300mW
- Frequency - Transition: 100MHz, 80MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: SOT-26
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Package: - |
Request a Quote |
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500mA | 45V | 700mV @ 50mA, 500mA | 100nA (ICBO) | 160 @ 100mA, 1V | 300mW | 100MHz, 80MHz | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | SOT-26 |
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Diodes Incorporated |
SS Low Sat Transistor PowerDI506
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 10V
- Power - Max: 1.47W
- Frequency - Transition: 130MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: PowerDI5060-8 (Type UXD)
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Package: - |
Stock4,443 |
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3A | 100V | 330mV @ 300mA, 3A | 100nA | 150 @ 500mA, 10V | 1.47W | 130MHz | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 (Type UXD) |
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Microchip Technology |
NPN TRANSISTOR
- Transistor Type: 1 NPN, 1 PNP
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 600mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-78-6 Metal Can
- Supplier Device Package: TO-78-6
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Package: - |
Request a Quote |
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600mA | 40V | 400mV @ 15mA, 150mA | 10µA (ICBO) | 100 @ 150mA, 10V | 600mW | - | -65°C ~ 200°C (TJ) | Through Hole | TO-78-6 Metal Can | TO-78-6 |
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Rohm Semiconductor |
TRANS GP BJT PNP 50V 0.1A 6-PIN
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
- Power - Max: 150mW
- Frequency - Transition: 300MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, Flat Leads
- Supplier Device Package: VMT6
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Package: - |
Stock23,625 |
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100mA | 50V | 400mV @ 5mA, 50mA | 100nA (ICBO) | 120 @ 1mA, 6V | 150mW | 300MHz | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | VMT6 |
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Microchip Technology |
NPN TRANSISTOR
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
- Power - Max: 600mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-78-6 Metal Can
- Supplier Device Package: TO-78-6
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Package: - |
Request a Quote |
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500mA | 60V | 300mV @ 5mA, 50mA | 10µA (ICBO) | 50 @ 10mA, 5V | 600mW | - | -65°C ~ 200°C (TJ) | Through Hole | TO-78-6 Metal Can | TO-78-6 |
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Diodes Incorporated |
SS LOW SAT TRANSISTOR U-DFN3020-
- Transistor Type: 1 NPN, 1 PNP Complementary
- Current - Collector (Ic) (Max): 4.5A, 4A
- Voltage - Collector Emitter Breakdown (Max): 15V, 12V
- Vce Saturation (Max) @ Ib, Ic: 310mV @ 50mA, 4.5A / 310mV @ 150mA, 4A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V / 300 @ 100mA, 2V
- Power - Max: 1.13W
- Frequency - Transition: 120MHz, 110MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-VDFN Exposed Pad
- Supplier Device Package: W-DFN3020-8
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4.5A, 4A | 15V, 12V | 310mV @ 50mA, 4.5A / 310mV @ 150mA, 4A | 100nA | 300 @ 200mA, 2V / 300 @ 100mA, 2V | 1.13W | 120MHz, 110MHz | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | W-DFN3020-8 |
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Nexperia USA Inc. |
BCM847BSH-QF
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 200mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
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Package: - |
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100mA | 45V | 400mV @ 5mA, 100mA | 15nA (ICBO) | 200 @ 2mA, 5V | 200mW | 250MHz | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP |