Page 104 - Transistors - Bipolar (BJT) - Single, Pre-Biased | Discrete Semiconductor Products

FJY4004R
Fairchild/ON Semiconductor

TRANS PREBIAS PNP 200MW SOT523F

Package: SC-89, SOT-490

Stock5,824
UNR211100L
Panasonic Electronic Components

TRANS PREBIAS PNP 200MW MINI3

Package: TO-236-3, SC-59, SOT-23-3

Stock1,368,000
NSBA124EF3T5G
ON Semiconductor

TRANS PREBIAS PNP 254MW SOT1123

Package: SOT-1123

Stock3,088
PDTD113ZUF
Nexperia USA Inc.

TRANS PREBIAS NPN 0.425W

Package: SC-70, SOT-323

Stock6,912
SMUN2214T1G
ON Semiconductor

TRANS PREBIAS NPN 230MW SC59

Package: TO-236-3, SC-59, SOT-23-3

Stock35,280
NSVMUN2212T1G
ON Semiconductor

TRANS PREBIAS NPN 230MW SC59-3

Package: TO-236-3, SC-59, SOT-23-3

Stock4,848
DTC114TCAT116
Rohm Semiconductor

NPN 100MA 50V DIGITAL TRANSISTOR

Package: TO-236-3, SC-59, SOT-23-3

Stock26,886
DRA5143Z0L
Panasonic Electronic Components

TRANS PREBIAS PNP 150MW SMINI3

Package: SC-85

Stock6,976
DRA5124T0L
Panasonic Electronic Components

TRANS PREBIAS PNP 150MW SMINI3

Package: SC-85

Stock6,832
DRA3123J0L
Panasonic Electronic Components

TRANS PREBIAS PNP 100MW SSSMINI3

Package: SOT-723

Stock3,472
DTC123EKAT146
Rohm Semiconductor

TRANS PREBIAS NPN 200MW SMT3

Package: TO-236-3, SC-59, SOT-23-3

Stock1,080,000
DDTB142JU-7
Diodes Incorporated

TRANS PREBIAS PNP 200MW SOT323

Package: SC-70, SOT-323

Stock25,200
DDTA113TUA-7-F
Diodes Incorporated

TRANS PREBIAS PNP 200MW SOT323

Package: SC-70, SOT-323

Stock648,000
PDTC143ZU,115
Nexperia USA Inc.

TRANS PREBIAS NPN 200MW SOT323

Package: SC-70, SOT-323

Stock234,486
DTC143ZET1G
ON Semiconductor

TRANS PREBIAS NPN 200MW SC75

Package: SC-75, SOT-416

Stock21,360
MMUN2133LT1G
ON Semiconductor

TRANS PREBIAS PNP 246MW SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock894,000
PDTC123JU-ZLX
NXP

TRANS PREBIAS NPN SC70

Package: -

Request a Quote
FJV3101RLIMTF
Fairchild Semiconductor

TRANS PREBIAS

Package: -

Request a Quote
DTC143TE3TL
Rohm Semiconductor

TRANS PREBIAS PNP 50V 0.1A EMT3

Package: -

Stock9,000
RN2408-LXHF
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V SMINI

Package: -

Stock18,000

Part Number	Manufacturer	Description	Package	Stock	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1) (Ohms)	Resistor - Emitter Base (R2) (Ohms)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequency - Transition	Power - Max	Mounting Type	Package / Case	Supplier Device Package
FJY4004R	Fairchild/ON Semiconductor	TRANS PREBIAS PNP 200MW SOT523F Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: SOT-523F	Package: SC-89, SOT-490	Stock5,824	100mA	50V	47k	47k	68 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	200MHz	200mW	Surface Mount	SC-89, SOT-490	SOT-523F
UNR211100L	Panasonic Electronic Components	TRANS PREBIAS PNP 200MW MINI3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 80MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: Mini3-G1	Package: TO-236-3, SC-59, SOT-23-3	Stock1,368,000	100mA	50V	10k	10k	35 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	80MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	Mini3-G1
NSBA124EF3T5G	ON Semiconductor	TRANS PREBIAS PNP 254MW SOT1123 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 254mW Mounting Type: Surface Mount Package / Case: SOT-1123 Supplier Device Package: SOT-1123	Package: SOT-1123	Stock3,088	100mA	50V	22k	22k	60 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	254mW	Surface Mount	SOT-1123	SOT-1123
PDTD113ZUF	Nexperia USA Inc.	TRANS PREBIAS NPN 0.425W Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 1k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 225MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	Package: SC-70, SOT-323	Stock6,912	500mA	50V	1k	10k	70 @ 50mA, 5V	100mV @ 2.5mA, 50mA	500nA	225MHz	300mW	Surface Mount	SC-70, SOT-323	SOT-323-3
SMUN2214T1G	ON Semiconductor	TRANS PREBIAS NPN 230MW SC59 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 230mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59	Package: TO-236-3, SC-59, SOT-23-3	Stock35,280	100mA	50V	10k	47k	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	230mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SC-59
NSVMUN2212T1G	ON Semiconductor	TRANS PREBIAS NPN 230MW SC59-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 230mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59-3	Package: TO-236-3, SC-59, SOT-23-3	Stock4,848	100mA	50V	22k	22k	60 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	230mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SC-59-3
DTC114TCAT116	Rohm Semiconductor	NPN 100MA 50V DIGITAL TRANSISTOR Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SST3	Package: TO-236-3, SC-59, SOT-23-3	Stock26,886	100mA	50V	10k	-	100 @ 1mA, 5V	300mV @ 1mA, 10mA	500nA (ICBO)	250MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SST3
DRA5143Z0L	Panasonic Electronic Components	TRANS PREBIAS PNP 150MW SMINI3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-85 Supplier Device Package: SMini3-F2-B	Package: SC-85	Stock6,976	100mA	50V	4.7k	47k	80 @ 5mA, 10V	250mV @ 500µA, 10mA	500nA	-	150mW	Surface Mount	SC-85	SMini3-F2-B
DRA5124T0L	Panasonic Electronic Components	TRANS PREBIAS PNP 150MW SMINI3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-85 Supplier Device Package: SMini3-F2-B	Package: SC-85	Stock6,832	100mA	50V	22k	-	160 @ 5mA, 10V	250mV @ 500µA, 10mA	500nA	-	150mW	Surface Mount	SC-85	SMini3-F2-B
DRA3123J0L	Panasonic Electronic Components	TRANS PREBIAS PNP 100MW SSSMINI3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: SSSMini3-F2-B	Package: SOT-723	Stock3,472	100mA	50V	2.2k	47k	80 @ 5mA, 10V	250mV @ 500µA, 10mA	500nA	-	100mW	Surface Mount	SOT-723	SSSMini3-F2-B
DTC123EKAT146	Rohm Semiconductor	TRANS PREBIAS NPN 200MW SMT3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 2.2k DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3	Package: TO-236-3, SC-59, SOT-23-3	Stock1,080,000	100mA	50V	2.2k	2.2k	20 @ 20mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SMT3
DDTB142JU-7	Diodes Incorporated	TRANS PREBIAS PNP 200MW SOT323 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 470 Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	Package: SC-70, SOT-323	Stock25,200	500mA	50V	470	10k	56 @ 50mA, 5V	300mV @ 2.5mA, 50mA	500nA	200MHz	200mW	Surface Mount	SC-70, SOT-323	SOT-323
DDTA113TUA-7-F	Diodes Incorporated	TRANS PREBIAS PNP 200MW SOT323 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 1k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	Package: SC-70, SOT-323	Stock648,000	100mA	50V	1k	-	100 @ 1mA, 5V	300mV @ 1mA, 10mA	500nA (ICBO)	250MHz	200mW	Surface Mount	SC-70, SOT-323	SOT-323
PDTC143ZU,115	Nexperia USA Inc.	TRANS PREBIAS NPN 200MW SOT323 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: - Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	Package: SC-70, SOT-323	Stock234,486	100mA	50V	4.7k	47k	100 @ 10mA, 5V	100mV @ 250µA, 5mA	1µA	-	200mW	Surface Mount	SC-70, SOT-323	SOT-323-3
DTC143ZET1G	ON Semiconductor	TRANS PREBIAS NPN 200MW SC75 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SC-75, SOT-416	Package: SC-75, SOT-416	Stock21,360	100mA	50V	4.7k	47k	80 @ 5mA, 10V	250mV @ 1mA, 10mA	500nA	-	200mW	Surface Mount	SC-75, SOT-416	SC-75, SOT-416
MMUN2133LT1G	ON Semiconductor	TRANS PREBIAS PNP 246MW SOT23-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 246mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	Package: TO-236-3, SC-59, SOT-23-3	Stock894,000	100mA	50V	4.7k	47k	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	246mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
PDTC123JU-ZLX	NXP	TRANS PREBIAS NPN SC70 Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): - Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - Frequency - Transition: - Power - Max: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
FJV3101RLIMTF	Fairchild Semiconductor	TRANS PREBIAS Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): - Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - Frequency - Transition: - Power - Max: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DTC143TE3TL	Rohm Semiconductor	TRANS PREBIAS PNP 50V 0.1A EMT3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 2.2 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: EMT3	Package: -	Stock9,000	100 mA	50 V	2.2 kOhms	47 kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA (ICBO)	250 MHz	150 mW	Surface Mount	SC-75, SOT-416	EMT3
RN2408-LXHF	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V SMINI Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 22 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	Package: -	Stock18,000	100 mA	50 V	22 kOhms	47 kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	200 MHz	200 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	S-Mini
DTC113ZMT2L	Rohm Semiconductor	TRANS PREBIAS NPN 50V 0.1A VMT3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 1 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VMT3	Package: -	Stock14,685	100 mA	50 V	1 kOhms	10 kOhms	33 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250 MHz	150 mW	Surface Mount	SOT-723	VMT3
DTC114YE3TL	Rohm Semiconductor	TRANS PREBIAS PNP 50V 0.1A EMT3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 47 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: EMT3	Package: -	Stock7,470	100 mA	50 V	47 kOhms	47 kOhms	68 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA (ICBO)	250 MHz	150 mW	Surface Mount	SC-75, SOT-416	EMT3
CE1F3P-AZ	Renesas Electronics Corporation	SMALL SIGNAL BIPOLAR TRANSISTOR Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 70 V Resistor - Base (R1) (Ohms): 2.2 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 2A, 5V Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: - Power - Max: 1 W Mounting Type: Through Hole Package / Case: 3-SSIP Supplier Device Package: -	Package: -	Request a Quote	2 A	70 V	2.2 kOhms	10 kOhms	500 @ 2A, 5V	-	100nA (ICBO)	-	1 W	Through Hole	3-SSIP	-
RN2107MFV-L3XHF-CT	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A VESM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 10 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	Package: -	Stock24,000	100 mA	50 V	10 kOhms	47 kOhms	80 @ 10mA, 5V	300mV @ 500µA, 5mA	500nA	-	150 mW	Surface Mount	SOT-723	VESM
DTC143ZUAHE3-TP	Micro Commercial Co	BIPOLAR TRANSISTORS Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	Package: -	Request a Quote	100 mA	50 V	4.7 kOhms	47 kOhms	80 @ 10mA, 5V	300mV @ 500µA, 10mA	500nA	250 MHz	200 mW	Surface Mount	SC-70, SOT-323	SOT-323
PDTC114YU-QX	Nexperia USA Inc.	TRANS PREBIAS NPN 50V SOT323 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 10 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: 230 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	Package: -	Request a Quote	100 mA	50 V	10 kOhms	47 kOhms	100 @ 5mA, 5V	100mV @ 250µA, 5mA	1µA	230 MHz	200 mW	Surface Mount	SC-70, SOT-323	SOT-323
DTA115EMFHAT2L	Rohm Semiconductor	TRANS PREBIAS PNP 50V 0.1A VMT3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 100 kOhms Resistor - Emitter Base (R2) (Ohms): 100 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VMT3	Package: -	Request a Quote	100 mA	50 V	100 kOhms	100 kOhms	82 @ 5mA, 5V	300mV @ 250µA, 5mA	500nA	250 MHz	150 mW	Surface Mount	SOT-723	VMT3
DTA113ZE3TL	Rohm Semiconductor	TRANS PREBIAS NPN 50V 0.1A EMT3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 2.2 kOhms Resistor - Emitter Base (R2) (Ohms): 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: EMT3	Package: -	Stock7,950	100 mA	50 V	2.2 kOhms	2.2 kOhms	20 @ 20mA, 5V	300mV @ 500µA, 10mA	500nA (ICBO)	250 MHz	150 mW	Surface Mount	SC-75, SOT-416	EMT3