Page 117 - Transistors - Bipolar (BJT) - Single, Pre-Biased | Discrete Semiconductor Products

BCR 133F B6327
Infineon Technologies

TRANS PREBIAS NPN 250MW TSFP-3

Package: SOT-723

Stock3,488
PDTA113ZS,126
NXP

TRANS PREBIAS PNP 500MW TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock2,880
FJN4314RTA
Fairchild/ON Semiconductor

TRANS PREBIAS PNP 300MW TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock6,576
DTA144EKA-TP
Micro Commercial Co

TRANS PREBIAS PNP 200MW SOT23-3L

Package: TO-236-3, SC-59, SOT-23-3

Stock6,192
UNR9214J0L
Panasonic Electronic Components

TRANS PREBIAS NPN 125MW SSMINI3

Package: SC-89, SOT-490

Stock178,800
RN1427TE85LF
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 200MW SMINI

Package: TO-236-3, SC-59, SOT-23-3

Stock4,784
RN1421TE85LF
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 200MW SMINI

Package: TO-236-3, SC-59, SOT-23-3

Stock3,904
PDTA124EMB,315
Nexperia USA Inc.

TRANS PREBIAS PNP 250MW 3DFN

Package: 3-XFDFN

Stock5,408
PDTB113ZUF
Nexperia USA Inc.

TRANS PREBIAS PNP 0.425W

Package: SC-70, SOT-323

Stock4,048
RN1101,LF(CT
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W SSM

Package: SC-75, SOT-416

Stock4,320
MUN2114T1G
ON Semiconductor

TRANS PREBIAS PNP 230MW SC59

Package: TO-236-3, SC-59, SOT-23-3

Stock36,000
MUN2240T1G
ON Semiconductor

TRANS PREBIAS NPN 338MW SC59

Package: TO-236-3, SC-59, SOT-23-3

Stock36,000
RN2308(TE85L,F)
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.1W USM

Package: SC-70, SOT-323

Stock6,080
DDTC114TE-7-F
Diodes Incorporated

TRANS PREBIAS NPN 150MW SOT523

Package: SOT-523

Stock7,904
DTA024EEBTL
Rohm Semiconductor

TRANS PREBIAS PNP 50V 0.15W SC89

Package: SC-89, SOT-490

Stock4,416
MMUN2115LT1G
ON Semiconductor

TRANS PREBIAS PNP 0.4W SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock1,116,000
UNR31A400L
Panasonic Electronic Components

TRANS PREBIAS PNP 100MW SSSMINI3

Package: SOT-723

Stock18,844,500
UNR211400L
Panasonic Electronic Components

TRANS PREBIAS PNP 200MW MINI3

Package: TO-236-3, SC-59, SOT-23-3

Stock106,800
PDTC143TU,135
Nexperia USA Inc.

TRANS PREBIAS NPN 200MW SOT323

Package: SC-70, SOT-323

Stock3,824
NTE2417
NTE Electronics, Inc

TRANS PREBIAS PNP 50V SOT23

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1) (Ohms)	Resistor - Emitter Base (R2) (Ohms)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequency - Transition	Power - Max	Mounting Type	Package / Case	Supplier Device Package
BCR 133F B6327	Infineon Technologies	TRANS PREBIAS NPN 250MW TSFP-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 130MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: PG-TSFP-3	Package: SOT-723	Stock3,488	100mA	50V	10k	10k	30 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	130MHz	250mW	Surface Mount	SOT-723	PG-TSFP-3
PDTA113ZS,126	NXP	TRANS PREBIAS PNP 500MW TO92-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 1k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: - Power - Max: 500mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock2,880	100mA	50V	1k	10k	35 @ 5mA, 5V	150mV @ 500µA, 10mA	1µA	-	500mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
FJN4314RTA	Fairchild/ON Semiconductor	TRANS PREBIAS PNP 300MW TO92-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 300mW Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock6,576	100mA	50V	4.7k	47k	68 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	200MHz	300mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
DTA144EKA-TP	Micro Commercial Co	TRANS PREBIAS PNP 200MW SOT23-3L Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3L	Package: TO-236-3, SC-59, SOT-23-3	Stock6,192	100mA	50V	47k	47k	68 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3L
UNR9214J0L	Panasonic Electronic Components	TRANS PREBIAS NPN 125MW SSMINI3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz Power - Max: 125mW Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: SSMini3-F1	Package: SC-89, SOT-490	Stock178,800	100mA	50V	10k	47k	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	150MHz	125mW	Surface Mount	SC-89, SOT-490	SSMini3-F1
RN1427TE85LF	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 200MW SMINI Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 300MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	Package: TO-236-3, SC-59, SOT-23-3	Stock4,784	800mA	50V	2.2k	10k	90 @ 100mA, 1V	250mV @ 1mA, 50mA	500nA	300MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	S-Mini
RN1421TE85LF	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 200MW SMINI Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 1k Resistor - Emitter Base (R2) (Ohms): 1k DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V Vce Saturation (Max) @ Ib, Ic: 250mV @ 2mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 300MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	Package: TO-236-3, SC-59, SOT-23-3	Stock3,904	800mA	50V	1k	1k	60 @ 100mA, 1V	250mV @ 2mA, 50mA	500nA	300MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	S-Mini
PDTA124EMB,315	Nexperia USA Inc.	TRANS PREBIAS PNP 250MW 3DFN Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA Frequency - Transition: 180MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: 3-XFDFN Supplier Device Package: 3-DFN1006B (0.6x1)	Package: 3-XFDFN	Stock5,408	100mA	50V	22k	22k	60 @ 5mA, 5V	150mV @ 500µA, 10mA	100nA	180MHz	250mW	Surface Mount	3-XFDFN	3-DFN1006B (0.6x1)
PDTB113ZUF	Nexperia USA Inc.	TRANS PREBIAS PNP 0.425W Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 1k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 140MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	Package: SC-70, SOT-323	Stock4,048	500mA	50V	1k	10k	70 @ 50mA, 5V	100mV @ 2.5mA, 50mA	500nA	140MHz	300mW	Surface Mount	SC-70, SOT-323	SOT-323-3
RN1101,LF(CT	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 0.1W SSM Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 4.7k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	Package: SC-75, SOT-416	Stock4,320	100mA	50V	4.7k	4.7k	30 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	100mW	Surface Mount	SC-75, SOT-416	SSM
MUN2114T1G	ON Semiconductor	TRANS PREBIAS PNP 230MW SC59 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 230mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59	Package: TO-236-3, SC-59, SOT-23-3	Stock36,000	100mA	50V	10k	47k	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	230mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SC-59
MUN2240T1G	ON Semiconductor	TRANS PREBIAS NPN 338MW SC59 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 338mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59	Package: TO-236-3, SC-59, SOT-23-3	Stock36,000	100mA	50V	47k	-	120 @ 5mA, 10V	250mV @ 1mA, 10mA	500nA	-	338mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SC-59
RN2308(TE85L,F)	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 0.1W USM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	Package: SC-70, SOT-323	Stock6,080	100mA	50V	22k	47k	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	200MHz	100mW	Surface Mount	SC-70, SOT-323	USM
DDTC114TE-7-F	Diodes Incorporated	TRANS PREBIAS NPN 150MW SOT523 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-523 Supplier Device Package: SOT-523	Package: SOT-523	Stock7,904	100mA	50V	10k	-	100 @ 1mA, 5V	300mV @ 100µA, 1mA	500nA (ICBO)	250MHz	150mW	Surface Mount	SOT-523	SOT-523
DTA024EEBTL	Rohm Semiconductor	TRANS PREBIAS PNP 50V 0.15W SC89 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): - Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: EMT3F (SOT-416FL)	Package: SC-89, SOT-490	Stock4,416	30mA	50V	22k	22k	60 @ 5mA, 10V	150mV @ 500µA, 5mA	-	250MHz	150mW	Surface Mount	SC-89, SOT-490	EMT3F (SOT-416FL)
MMUN2115LT1G	ON Semiconductor	TRANS PREBIAS PNP 0.4W SOT23-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 400mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	Package: TO-236-3, SC-59, SOT-23-3	Stock1,116,000	100mA	50V	10k	-	160 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	400mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
UNR31A400L	Panasonic Electronic Components	TRANS PREBIAS PNP 100MW SSSMINI3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 80MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: SSSMini3-F1	Package: SOT-723	Stock18,844,500	80mA	50V	10k	47k	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	80MHz	100mW	Surface Mount	SOT-723	SSSMini3-F1
UNR211400L	Panasonic Electronic Components	TRANS PREBIAS PNP 200MW MINI3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: Mini3-G1	Package: TO-236-3, SC-59, SOT-23-3	Stock106,800	100mA	50V	10k	47k	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	150MHz	200mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	Mini3-G1
PDTC143TU,135	Nexperia USA Inc.	TRANS PREBIAS NPN 200MW SOT323 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: - Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	Package: SC-70, SOT-323	Stock3,824	100mA	50V	4.7k	-	200 @ 1mA, 5V	100mV @ 250µA, 5mA	1µA	-	200mW	Surface Mount	SC-70, SOT-323	SOT-323-3
NTE2417	NTE Electronics, Inc	TRANS PREBIAS PNP 50V SOT23 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 22 kOhms Resistor - Emitter Base (R2) (Ohms): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	Package: -	Request a Quote	100 mA	50 V	22 kOhms	22 kOhms	50 @ 10mA, 5V	300mV @ 500µA, 10mA	500nA	200 MHz	200 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
2SC3400	onsemi	SMALL SIGNAL BIPOLAR TRANSTR NPN Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 22 kOhms Resistor - Emitter Base (R2) (Ohms): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: - Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 300 mW Mounting Type: Through Hole Package / Case: 3-SSIP Supplier Device Package: 3-SPA	Package: -	Request a Quote	100 mA	50 V	22 kOhms	22 kOhms	-	300mV @ 500µA, 10mA	500nA	250 MHz	300 mW	Through Hole	3-SSIP	3-SPA
FA4F4M-T1B-A	Renesas Electronics Corporation	TRANS PREBIAS NPN 50V 0.1A Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 22 kOhms Resistor - Emitter Base (R2) (Ohms): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 200mV @ 250µ, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: - Power - Max: 200 mW Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	100 mA	50 V	22 kOhms	22 kOhms	60 @ 50mA, 5V	200mV @ 250µ, 5mA	100nA (ICBO)	-	200 mW	-	-	-
RN2412-LF	Toshiba Semiconductor and Storage	PB-F S-MINI PLN (LF) TRANSISTOR Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 22 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	Package: -	Request a Quote	100 mA	50 V	22 kOhms	-	120 @ 1mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	200 MHz	200 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	S-Mini
TDTC123J-LM	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V SOT23-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 2.2 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 320 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	Package: -	Stock8,850	100 mA	50 V	2.2 kOhms	-	80 @ 10mA, 5V	300mV @ 500µA, 10mA	500nA	250 MHz	320 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
DTA114EE-TP	Micro Commercial Co	TRANS PREBIAS PNP 50V SOT523 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 10 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SOT-523 Supplier Device Package: SOT-523	Package: -	Request a Quote	100 mA	50 V	10 kOhms	10 kOhms	30 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250 MHz	150 mW	Surface Mount	SOT-523	SOT-523
DDTA123YCA-TP	Micro Commercial Co	TRANS PREBIAS PNP 50V SOT23 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 2.2 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	Package: -	Request a Quote	500 mA	50 V	2.2 kOhms	-	56 @ 50mA, 5V	300mV @ 500µA, 10mA	500nA	200 MHz	200 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
DTA143TU3HZGT106	Rohm Semiconductor	TRANS PREBIAS PNP 50V 0.1A UMT3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: UMT3	Package: -	Stock8,925	100 mA	50 V	4.7 kOhms	-	100 @ 1mA, 5V	300mV @ 250µA, 5mA	500nA (ICBO)	250 MHz	200 mW	Surface Mount	SC-70, SOT-323	UMT3
RN2112-LF-CT	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A SSM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 22 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	Package: -	Stock9,000	100 mA	50 V	22 kOhms	-	120 @ 1mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	200 MHz	100 mW	Surface Mount	SC-75, SOT-416	SSM