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Panasonic Electronic Components |
TRANS PREBIAS PNP 150MW SMINI3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 80mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 80MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: SC-85
- Supplier Device Package: SMini3-F2
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Package: SC-85 |
Stock4,176 |
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80mA | 50V | 22k | 47k | 80 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | 80MHz | 150mW | Surface Mount | SC-85 | SMini3-F2 |
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Diodes Incorporated |
TRANS PREBIAS PNP 200MW SC59-3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 100k
- Resistor - Emitter Base (R2) (Ohms): 100k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SC-59-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,776 |
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100mA | 50V | 100k | 100k | 82 @ 5mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250MHz | 200mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SC-59-3 |
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NXP |
TRANS PREBIAS NPN 500MW TO92-3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock2,512 |
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100mA | 50V | 47k | 10k | 40 @ 5mA, 5V | 150mV @ 500µA, 10mA | 1µA | - | 500mW | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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ON Semiconductor |
TRANS PREBIAS NPN 202MW SC70-3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 202mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70-3 (SOT323)
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Package: SC-70, SOT-323 |
Stock36,000 |
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100mA | 50V | 22k | 47k | 80 @ 5mA, 10V | 250mV @ 1mA, 10mA | 500nA | - | 202mW | Surface Mount | SC-70, SOT-323 | SC-70-3 (SOT323) |
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ON Semiconductor |
TRANS PREBIAS PNP 202MW SC70-3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 202mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70-3 (SOT323)
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Package: SC-70, SOT-323 |
Stock204,000 |
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100mA | 50V | 10k | - | 160 @ 5mA, 10V | 250mV @ 1mA, 10mA | 500nA | - | 202mW | Surface Mount | SC-70, SOT-323 | SC-70-3 (SOT323) |
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ON Semiconductor |
TRANS PREBIAS PNP 246MW SOT23-3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 246mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock1,836,000 |
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100mA | 50V | 22k | 22k | 60 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | - | 246mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
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Fairchild/ON Semiconductor |
TRANS PREBIAS PNP 200MW SOT323
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 4.7k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
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Package: SC-70, SOT-323 |
Stock7,056 |
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100mA | 50V | 4.7k | 4.7k | 20 @ 10mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 200MHz | 200mW | Surface Mount | SC-70, SOT-323 | SOT-323 |
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Panasonic Electronic Components |
TRANS PREBIAS NPN 300MW NS-B1
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 150MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: NS-B1
- Supplier Device Package: NS-B1
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Package: NS-B1 |
Stock3,408 |
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100mA | 50V | 4.7k | 10k | 30 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | 150MHz | 300mW | Through Hole | NS-B1 | NS-B1 |
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Rohm Semiconductor |
TRANS PREBIAS NPN 300MW SPT
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: SC-72 Formed Leads
- Supplier Device Package: SPT
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Package: SC-72 Formed Leads |
Stock2,528 |
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100mA | 50V | 47k | - | 100 @ 1mA, 5V | 300mV @ 500µA, 5mA | 500nA (ICBO) | 250MHz | 300mW | Through Hole | SC-72 Formed Leads | SPT |
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Infineon Technologies |
TRANS PREBIAS NPN 200MW SOT23-3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 150MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock7,488 |
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100mA | 50V | 10k | - | 120 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 150MHz | 200mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3 |
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ON Semiconductor |
TRANS PREBIAS PNP 0.202W SC70
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 2.2k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 202mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70-3 (SOT323)
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Package: SC-70, SOT-323 |
Stock5,552 |
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100mA | 50V | 2.2k | 2.2k | 8 @ 5mA, 10V | 250mV @ 5mA, 10mA | 500nA | - | 202mW | Surface Mount | SC-70, SOT-323 | SC-70-3 (SOT323) |
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ON Semiconductor |
TRANS PREBIAS NPN 200MW SC75
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SC-75, SOT-416
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Package: SC-75, SOT-416 |
Stock4,080 |
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100mA | 50V | 4.7k | - | 160 @ 5mA, 10V | 250mV @ 1mA, 10mA | 500nA | - | 200mW | Surface Mount | SC-75, SOT-416 | SC-75, SOT-416 |
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Nexperia USA Inc. |
TRANS PREBIAS NPN 250MW SOT883
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: DFN1006-3
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Package: SC-101, SOT-883 |
Stock3,392 |
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100mA | 50V | 10k | 10k | 30 @ 5mA, 5V | 150mV @ 500µA, 10mA | 1µA | - | 250mW | Surface Mount | SC-101, SOT-883 | DFN1006-3 |
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Nexperia USA Inc. |
TRANS PREBIAS PNP 250MW SOT883
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: DFN1006-3
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Package: SC-101, SOT-883 |
Stock2,240 |
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100mA | 50V | 4.7k | 47k | 100 @ 10mA, 5V | 100mV @ 250µA, 5mA | 1µA | - | 250mW | Surface Mount | SC-101, SOT-883 | DFN1006-3 |
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Toshiba Semiconductor and Storage |
TRANS NPN PREBIAS 50V 100MA VESM
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 4.7k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VESM
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Package: SOT-723 |
Stock2,752 |
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100mA | 50V | 10k | 4.7k | 30 @ 10mA, 5V | 300mV @ 500µA, 5mA | 500nA | 250MHz | 150mW | Surface Mount | SOT-723 | VESM |
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ON Semiconductor |
TRANS PREBIAS NPN 202MW SC70-3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 2.2k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 202mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70-3 (SOT323)
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Package: SC-70, SOT-323 |
Stock473,040 |
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100mA | 50V | 22k | 2.2k | 60 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | - | 202mW | Surface Mount | SC-70, SOT-323 | SC-70-3 (SOT323) |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 0.1W CST3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 80mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: CST3
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Package: SC-101, SOT-883 |
Stock2,688 |
|
80mA | 50V | 10k | 47k | 80 @ 10mA, 5V | 150mV @ 250µA, 5mA | 500nA | - | 100mW | Surface Mount | SC-101, SOT-883 | CST3 |
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Diodes Incorporated |
TRANS PREBIAS NPN 200MW SOT323
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
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Package: SC-70, SOT-323 |
Stock3,424 |
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100mA | 50V | 22k | - | 100 @ 1mA, 5V | 300mV @ 500µA, 5mA | 500nA (ICBO) | 250MHz | 200mW | Surface Mount | SC-70, SOT-323 | SOT-323 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 0.1W CST3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 80mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: CST3
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Package: SC-101, SOT-883 |
Stock90,396 |
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80mA | 50V | 22k | 22k | 70 @ 10mA, 5V | 150mV @ 250µA, 5mA | 500nA | - | 100mW | Surface Mount | SC-101, SOT-883 | CST3 |
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Panasonic Electronic Components |
TRANS PREBIAS NPN 100MW SSSMINI3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: SSSMini3-F2-B
|
Package: SOT-723 |
Stock2,800 |
|
100mA | 50V | 22k | - | 160 @ 5mA, 10V | 250mV @ 500µA, 10mA | 500nA | - | 100mW | Surface Mount | SOT-723 | SSSMini3-F2-B |
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Panasonic Electronic Components |
TRANS PREBIAS PNP 150MW SMINI3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: SC-85
- Supplier Device Package: SMini3-F2-B
|
Package: SC-85 |
Stock5,776 |
|
100mA | 50V | 2.2k | 47k | 80 @ 5mA, 10V | 250mV @ 500µA, 10mA | 500nA | - | 150mW | Surface Mount | SC-85 | SMini3-F2-B |
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|
Diodes Incorporated |
TRANS PREBIAS PNP 200MW SOT323
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
|
Package: SC-70, SOT-323 |
Stock6,016 |
|
100mA | 50V | 4.7k | 10k | 30 @ 10mA, 5V | 300mV @ 500µA, 10mA | 500nA | 250MHz | 200mW | Surface Mount | SC-70, SOT-323 | SOT-323 |
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|
Diodes Incorporated |
TRANS PREBIAS PNP 150MW SOT523
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 220
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: SOT-523
- Supplier Device Package: SOT-523
|
Package: SOT-523 |
Stock28,050 |
|
100mA | 50V | 220 | 10k | 56 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 200MHz | 150mW | Surface Mount | SOT-523 | SOT-523 |
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|
Nexperia USA Inc. |
TRANS PREBIAS PNP 50V 0.1A 3DFN
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 47 kOhms
- Resistor - Emitter Base (R2) (Ohms): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: 180 MHz
- Power - Max: 340 mW
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 3-XDFN Exposed Pad
- Supplier Device Package: DFN1110D-3
|
Package: - |
Stock15,000 |
|
100 mA | 50 V | 47 kOhms | 47 kOhms | 80 @ 5mA, 5V | 100mV @ 500µA, 10mA | 100nA | 180 MHz | 340 mW | Surface Mount, Wettable Flank | 3-XDFN Exposed Pad | DFN1110D-3 |
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|
Rohm Semiconductor |
TRANS PREBIAS PNP 0.1A VMT3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): -
- Resistor - Base (R1) (Ohms): 4.7 kOhms
- Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 150 mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VMT3
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Package: - |
Stock20,406 |
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100 mA | - | 4.7 kOhms | 4.7 kOhms | 30 @ 10mA, 5V | 300mV @ 500µA, 10mA | 500nA | 250 MHz | 150 mW | Surface Mount | SOT-723 | VMT3 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 50V 0.1A VESM
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 4.7 kOhms
- Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 150 mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VESM
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Package: - |
Request a Quote |
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100 mA | 50 V | 4.7 kOhms | 4.7 kOhms | 30 @ 10mA, 5V | 300mV @ 500µA, 5mA | 500nA | - | 150 mW | Surface Mount | SOT-723 | VESM |
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Micro Commercial Co |
TRANS PREBIAS NPN 50V SOT23
- Transistor Type: NPN - Pre-Biased + Diode
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 10 kOhms
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
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Package: - |
Stock18,000 |
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100 mA | 50 V | 10 kOhms | - | 68 @ 5mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250 MHz | 200 mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 |
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onsemi |
TRANS BRT PNP 100MA 50V SC59
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Resistor - Base (R1) (Ohms): -
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- Frequency - Transition: -
- Power - Max: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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