|
|
Infineon Technologies |
TRANS PREBIAS NPN 250MW TSLP-3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 70mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 100MHz
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: PG-TSLP-3
|
Package: SC-101, SOT-883 |
Stock7,264 |
|
70mA | 50V | 47k | 47k | 70 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 100MHz | 250mW | Surface Mount | SC-101, SOT-883 | PG-TSLP-3 |
|
|
Infineon Technologies |
TRANS PREBIAS NPN 250MW SC75
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 150MHz
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: PG-SC-75
|
Package: SC-75, SOT-416 |
Stock3,488 |
|
100mA | 50V | 10k | 47k | 70 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 150MHz | 250mW | Surface Mount | SC-75, SOT-416 | PG-SC-75 |
|
|
Infineon Technologies |
TRANS PREBIAS NPN 250MW SC75
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 100k
- Resistor - Emitter Base (R2) (Ohms): 100k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 100MHz
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: PG-SC-75
|
Package: SC-75, SOT-416 |
Stock2,928 |
|
50mA | 50V | 100k | 100k | 70 @ 5mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 100MHz | 250mW | Surface Mount | SC-75, SOT-416 | PG-SC-75 |
|
|
Fairchild/ON Semiconductor |
TRANS PREBIAS PNP 200MW SOT323
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
|
Package: SC-70, SOT-323 |
Stock6,752 |
|
100mA | 50V | 10k | 10k | 30 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 200MHz | 200mW | Surface Mount | SC-70, SOT-323 | SOT-323 |
|
|
Fairchild/ON Semiconductor |
TRANS PREBIAS NPN 300MW TO92S
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
- Supplier Device Package: TO-92S
|
Package: TO-226-3, TO-92-3 Short Body (Formed Leads) |
Stock3,008 |
|
100mA | 50V | 22k | 47k | 68 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 250MHz | 300mW | Through Hole | TO-226-3, TO-92-3 Short Body (Formed Leads) | TO-92S |
|
|
NXP |
TRANS PREBIAS NPN 150MW SC75
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SC-75
|
Package: SC-75, SOT-416 |
Stock5,344 |
|
100mA | 50V | 10k | 47k | 100 @ 5mA, 5V | 100mV @ 250µA, 5mA | 1µA | - | 150mW | Surface Mount | SC-75, SOT-416 | SC-75 |
|
|
ON Semiconductor |
TRANS PREBIAS DUAL NPN
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 254mW
- Mounting Type: Surface Mount
- Package / Case: SOT-1123
- Supplier Device Package: SOT-1123
|
Package: SOT-1123 |
Stock3,584 |
|
100mA | 50V | 22k | 47k | 80 @ 5mA, 10V | 250mV @ 1mA, 10mA | 500nA | - | 254mW | Surface Mount | SOT-1123 | SOT-1123 |
|
|
Nexperia USA Inc. |
TRANS PREBIAS NPN 0.425W
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 1k
- Resistor - Emitter Base (R2) (Ohms): 1k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 225MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323-3
|
Package: SC-70, SOT-323 |
Stock2,080 |
|
500mA | 50V | 1k | 1k | 33 @ 50mA, 5V | 100mV @ 2.5mA, 50mA | 500nA | 225MHz | 300mW | Surface Mount | SC-70, SOT-323 | SOT-323-3 |
|
|
Nexperia USA Inc. |
TRANS PREBIAS NPN 0.425W
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 4.7k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 225MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323-3
|
Package: SC-70, SOT-323 |
Stock3,760 |
|
500mA | 50V | 4.7k | 4.7k | 60 @ 50mA, 5V | 100mV @ 2.5mA, 50mA | 500nA | 225MHz | 300mW | Surface Mount | SC-70, SOT-323 | SOT-323-3 |
|
|
Panasonic Electronic Components |
TRANS PREBIAS NPN 125MW SSMINI3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): -
- Resistor - Emitter Base (R2) (Ohms): 100k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 125mW
- Mounting Type: Surface Mount
- Package / Case: SC-89, SOT-490
- Supplier Device Package: SSMini3-F3-B
|
Package: SC-89, SOT-490 |
Stock3,040 |
|
100mA | 50V | - | 100k | 80 @ 5mA, 10V | 250mV @ 500µA, 10mA | 500nA | - | 125mW | Surface Mount | SC-89, SOT-490 | SSMini3-F3-B |
|
|
Panasonic Electronic Components |
TRANS PREBIAS NPN 100MW SSSMINI3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: SSSMini3-F2-B
|
Package: SOT-723 |
Stock7,776 |
|
100mA | 50V | 10k | - | 160 @ 5mA, 10V | 250mV @ 500µA, 10mA | 500nA | - | 100mW | Surface Mount | SOT-723 | SSSMini3-F2-B |
|
|
Panasonic Electronic Components |
TRANS PREBIAS PNP 100MW SSSMINI3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 80mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 80MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: SSSMini3-F1
|
Package: SOT-723 |
Stock240,000 |
|
80mA | 50V | 4.7k | 47k | 80 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | 80MHz | 100mW | Surface Mount | SOT-723 | SSSMini3-F1 |
|
|
Panasonic Electronic Components |
TRANS PREBIAS NPN 100MW SSSMINI3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 150MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: SSSMini3-F1
|
Package: SOT-723 |
Stock4,336 |
|
100mA | 50V | 47k | 47k | 80 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | 150MHz | 100mW | Surface Mount | SOT-723 | SSSMini3-F1 |
|
|
Rohm Semiconductor |
TRANS PREBIAS PNP 150MW EMT3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 4.7k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: EMT3
|
Package: SC-75, SOT-416 |
Stock288,000 |
|
100mA | 50V | 4.7k | 4.7k | 30 @ 10mA, 5V | 300mV @ 500µA, 10mA | 500nA | 250MHz | 150mW | Surface Mount | SC-75, SOT-416 | EMT3 |
|
|
Diodes Incorporated |
TRANS PREBIAS PNP 200MW SOT23-3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,360 |
|
100mA | 50V | 47k | 47k | 68 @ 5mA, 5V | 300mV @ 500µA, 10mA | 500nA | 250MHz | 200mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
|
|
Rohm Semiconductor |
NPN 500MA/50V DIGITAL TRANSISTOR
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SST3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,672 |
|
500mA | 50V | 10k | 10k | 56 @ 50mA, 5V | 300mV @ 2.5mA, 50mA | 500nA | 200MHz | 200mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SST3 |
|
|
Fairchild/ON Semiconductor |
TRANS PREBIAS NPN 200MW SOT323
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
|
Package: SC-70, SOT-323 |
Stock1,190,040 |
|
100mA | 50V | 4.7k | 47k | 68 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 250MHz | 200mW | Surface Mount | SC-70, SOT-323 | SOT-323 |
|
|
Diodes Incorporated |
TRANS PREBIAS PNP 200MW SOT23-3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 2.5mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock468,000 |
|
100mA | 50V | 4.7k | - | 100 @ 1mA, 5V | 300mV @ 250µA, 2.5mA | 500nA (ICBO) | 250MHz | 200mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
|
|
Panasonic Electronic Components |
TRANS PREBIAS PNP 150MW SMINI3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 80MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SMini3-G1
|
Package: SC-70, SOT-323 |
Stock78,060 |
|
100mA | 50V | 10k | 47k | 80 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | 80MHz | 150mW | Surface Mount | SC-70, SOT-323 | SMini3-G1 |
|
|
Diodes Incorporated |
TRANS PREBIAS PNP 150MW SOT523
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 1k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: SOT-523
- Supplier Device Package: SOT-523
|
Package: SOT-523 |
Stock2,240 |
|
100mA | 50V | 1k | - | 100 @ 1mA, 5V | 300mV @ 1mA, 10mA | 500nA (ICBO) | 250MHz | 150mW | Surface Mount | SOT-523 | SOT-523 |
|
|
Diodes Incorporated |
TRANS PREBIAS PNP 200MW SOT323
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
|
Package: SC-70, SOT-323 |
Stock26,502 |
|
100mA | 50V | 22k | 47k | 68 @ 10mA, 5V | 300mV @ 500µA, 10mA | 500nA | 250MHz | 200mW | Surface Mount | SC-70, SOT-323 | SOT-323 |
|
|
Rohm Semiconductor |
TRANS PREBIAS NPN 50V UMT3F
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: SC-85
- Supplier Device Package: UMT3F
|
Package: SC-85 |
Stock7,440 |
|
100mA | 50V | 2.2k | 10k | 35 @ 5mA, 10V | 150mV @ 500µA, 5mA | - | 250MHz | 200mW | Surface Mount | SC-85 | UMT3F |
|
|
Fairchild/ON Semiconductor |
TRANS PREBIAS NPN 300MW TO92-3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock54,816 |
|
100mA | 50V | 4.7k | 10k | 30 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 250MHz | 300mW | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 50V SMINI
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 4.7 kOhms
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
|
Package: - |
Stock600 |
|
100 mA | 50 V | 4.7 kOhms | - | 120 @ 1mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 200 MHz | 200 mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini |
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 50V 0.1A SMINI
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 47 kOhms
- Resistor - Emitter Base (R2) (Ohms): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
|
Package: - |
Stock9,000 |
|
100 mA | 50 V | 47 kOhms | 10 kOhms | 50 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 200 MHz | 200 mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini |
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 50V 0.1A SSM
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 2.2 kOhms
- Resistor - Emitter Base (R2) (Ohms): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200 MHz
- Power - Max: 100 mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
|
Package: - |
Stock35,895 |
|
100 mA | 50 V | 2.2 kOhms | 47 kOhms | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 200 MHz | 100 mW | Surface Mount | SC-75, SOT-416 | SSM |
|
|
Rohm Semiconductor |
TRANS PREBIAS PNP 0.5A SST3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): -
- Resistor - Base (R1) (Ohms): 4.7 kOhms
- Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 200 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SST3
|
Package: - |
Stock705 |
|
500 mA | - | 4.7 kOhms | 4.7 kOhms | 47 @ 50mA, 5V | 300mV @ 2.5mA, 50mA | - | 200 MHz | 200 mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SST3 |
|
|
Nexperia USA Inc. |
TRANS PREBIAS NPN 50V 0.1A 3DFN
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 22 kOhms
- Resistor - Emitter Base (R2) (Ohms): 22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: 230 MHz
- Power - Max: 360 mW
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 3-XDFN Exposed Pad
- Supplier Device Package: DFN1412D-3
|
Package: - |
Stock15,000 |
|
100 mA | 50 V | 22 kOhms | 22 kOhms | 60 @ 5mA, 5V | 100mV @ 500µA, 10mA | 100nA | 230 MHz | 360 mW | Surface Mount, Wettable Flank | 3-XDFN Exposed Pad | DFN1412D-3 |