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Infineon Technologies |
TRANS PREBIAS NPN 250MW SOT323-3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 150MHz
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323-3
|
Package: SC-70, SOT-323 |
Stock6,896 |
|
100mA | 50V | 4.7k | 47k | 70 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 150MHz | 250mW | Surface Mount | SC-70, SOT-323 | PG-SOT323-3 |
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Infineon Technologies |
TRANS PREBIAS NPN 250MW SC75
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 2.2k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 20mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 140MHz
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: PG-SC-75
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Package: SC-75, SOT-416 |
Stock3,360 |
|
100mA | 50V | 2.2k | 2.2k | 20 @ 20mA, 5V | 300mV @ 1mA, 20mA | 100nA (ICBO) | 140MHz | 250mW | Surface Mount | SC-75, SOT-416 | PG-SC-75 |
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Panasonic Electronic Components |
TRANS PREBIAS PNP 150MW SMINI3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 80mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 80MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: SC-85
- Supplier Device Package: SMini3-F2
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Package: SC-85 |
Stock5,696 |
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80mA | 50V | 10k | 47k | 80 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | 80MHz | 150mW | Surface Mount | SC-85 | SMini3-F2 |
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Diodes Incorporated |
TRANS PREBIAS NPN 200MW SC59
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 100k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SC-59
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,752 |
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100mA | 50V | 100k | - | 100 @ 1mA, 5V | 300mV @ 100µA, 1mA | 500nA (ICBO) | 250MHz | 200mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SC-59 |
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ON Semiconductor |
TRANS PREBIAS NPN 246MW SOT23-3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 100k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 246mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock6,448 |
|
100mA | 50V | 100k | - | 160 @ 5mA, 10V | 250mV @ 5mA, 10mA | 500nA | - | 246mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
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Rohm Semiconductor |
TRANS PREBIAS PNP 300MW SPT
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 300mW
- Mounting Type: Through Hole
- Package / Case: SC-72 Formed Leads
- Supplier Device Package: SPT
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Package: SC-72 Formed Leads |
Stock240,000 |
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50mA | 50V | 10k | 10k | 30 @ 5mA, 5V | 300mV @ 500µA, 10mA | 500nA | 250MHz | 300mW | Through Hole | SC-72 Formed Leads | SPT |
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Diodes Incorporated |
TRANS PREBIAS NPN 200MW SOT23-3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 2.5mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock5,072 |
|
100mA | 50V | 4.7k | - | 100 @ 1mA, 5V | 300mV @ 250µA, 2.5mA | 500nA (ICBO) | 250MHz | 200mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
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Rohm Semiconductor |
TRANS PREBIAS NPN 0.15W
- Transistor Type: NPN - Pre-Biased + Diode
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: EMT6
|
Package: SOT-563, SOT-666 |
Stock7,376 |
|
100mA | 50V | 2.2k | 47k | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250MHz | 150mW | Surface Mount | SOT-563, SOT-666 | EMT6 |
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Rohm Semiconductor |
TRANS PREBIAS PNP 150MW VMT3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 12V
- Resistor - Base (R1) (Ohms): 2.2k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 260MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VMT3
|
Package: SOT-723 |
Stock7,344 |
|
500mA | 12V | 2.2k | 10k | 140 @ 100mA, 2V | 300mV @ 5mA, 100mA | 500nA | 260MHz | 150mW | Surface Mount | SOT-723 | VMT3 |
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|
ON Semiconductor |
TRANS PREBIAS NPN 0.246W SOT23
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 246mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock7,664 |
|
100mA | 50V | 47k | 47k | 80 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | - | 246mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 0.1W USM
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 4.7k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: USM
|
Package: SC-70, SOT-323 |
Stock5,568 |
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100mA | 50V | 10k | 4.7k | 30 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250MHz | 100mW | Surface Mount | SC-70, SOT-323 | USM |
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ON Semiconductor |
TRANS NPN 50V BIPOLAR SOT723
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 260mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: SOT-723
|
Package: SOT-723 |
Stock3,728 |
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100mA | 50V | 10k | 47k | 80 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | - | 260mW | Surface Mount | SOT-723 | SOT-723 |
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ON Semiconductor |
TRANS PREBIAS PNP 260MW SOT723
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 260mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: SOT-723
|
Package: SOT-723 |
Stock2,640 |
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100mA | 50V | 47k | - | 120 @ 5mA, 10V | 250mV @ 1mA, 10mA | 500nA | - | 260mW | Surface Mount | SOT-723 | SOT-723 |
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ON Semiconductor |
TRANS PREBIAS NPN 202MW SC70-3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 202mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70-3 (SOT323)
|
Package: SC-70, SOT-323 |
Stock6,704 |
|
100mA | 50V | 22k | 47k | 80 @ 5mA, 10V | 250mV @ 1mA, 10mA | 500nA | - | 202mW | Surface Mount | SC-70, SOT-323 | SC-70-3 (SOT323) |
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Nexperia USA Inc. |
TRANS PREBIAS NPN 200MW SOT323
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323-3
|
Package: SC-70, SOT-323 |
Stock5,664 |
|
100mA | 50V | 47k | 10k | 40 @ 5mA, 5V | 150mV @ 500µA, 10mA | 1µA | - | 200mW | Surface Mount | SC-70, SOT-323 | SOT-323-3 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 0.1W USM
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: USM
|
Package: SC-70, SOT-323 |
Stock3,760 |
|
100mA | 50V | 10k | 47k | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 200MHz | 100mW | Surface Mount | SC-70, SOT-323 | USM |
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Rohm Semiconductor |
TRANS PREBIAS NPN 50V VMT3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 30mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VMT3
|
Package: SOT-723 |
Stock7,904 |
|
30mA | 50V | 22k | 22k | 60 @ 5mA, 10V | 150mV @ 500µA, 5mA | - | 250MHz | 150mW | Surface Mount | SOT-723 | VMT3 |
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ON Semiconductor |
TRANS PREBIAS PNP 0.4W SOT23-3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 246mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock792,000 |
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100mA | 50V | 47k | 47k | 80 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | - | 246mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
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Panasonic Electronic Components |
TRANS PREBIAS NPN 100MW SSSMINI3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: SSSMini3-F2-B
|
Package: SOT-723 |
Stock3,392 |
|
100mA | 50V | 4.7k | 10k | 30 @ 5mA, 10V | 250mV @ 500µA, 10mA | 500nA | - | 100mW | Surface Mount | SOT-723 | SSSMini3-F2-B |
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Panasonic Electronic Components |
TRANS PREBIAS PNP 125MW SSMINI3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 47k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 125mW
- Mounting Type: Surface Mount
- Package / Case: SC-89, SOT-490
- Supplier Device Package: SSMini3-F3-B
|
Package: SC-89, SOT-490 |
Stock6,992 |
|
100mA | 50V | 47k | 22k | 60 @ 5mA, 10V | 250mV @ 500µA, 10mA | 500nA | - | 125mW | Surface Mount | SC-89, SOT-490 | SSMini3-F3-B |
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|
Panasonic Electronic Components |
TRANS PREBIAS NPN 100MW SSSMINI3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 150MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: SSSMini3-F1
|
Package: SOT-723 |
Stock6,192 |
|
100mA | 50V | 4.7k | - | 160 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | 150MHz | 100mW | Surface Mount | SOT-723 | SSSMini3-F1 |
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|
Diodes Incorporated |
TRANS PREBIAS NPN 200MW SOT23-3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 470
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock230,682 |
|
500mA | 50V | 470 | 10k | 56 @ 50mA, 5V | 300mV @ 2.5mA, 50mA | 500nA | 200MHz | 200mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
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|
onsemi |
TRANS PREBIAS NPN 50V
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Resistor - Base (R1) (Ohms): -
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- Frequency - Transition: -
- Power - Max: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Rohm Semiconductor |
TRANS PREBIAS NPN 0.1A UMT3F
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): -
- Resistor - Base (R1) (Ohms): 2.2 kOhms
- Resistor - Emitter Base (R2) (Ohms): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 250 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: SC-85
- Supplier Device Package: UMT3F
|
Package: - |
Stock5,673 |
|
100 mA | - | 2.2 kOhms | 47 kOhms | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | - | 250 MHz | 200 mW | Surface Mount | SC-85 | UMT3F |
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|
Diodes Incorporated |
TRANS PREBIAS SOT363
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Resistor - Base (R1) (Ohms): -
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- Frequency - Transition: -
- Power - Max: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
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Nexperia USA Inc. |
TRANS PREBIAS NPN 50V TO236AB
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 2.2 kOhms
- Resistor - Emitter Base (R2) (Ohms): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: 230 MHz
- Power - Max: 250 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
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Package: - |
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100 mA | 50 V | 2.2 kOhms | 47 kOhms | 100 @ 10mA, 5V | 100mV @ 250µA, 5mA | 1µA | 230 MHz | 250 mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB |
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Rohm Semiconductor |
TRANS PREBIAS PNP 50V 0.1A VMT3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 22 kOhms
- Resistor - Emitter Base (R2) (Ohms): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 150 mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VMT3
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Package: - |
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100 mA | 50 V | 22 kOhms | 47 kOhms | 68 @ 5mA, 5V | 300mV @ 500µA, 10mA | 500nA | 250 MHz | 150 mW | Surface Mount | SOT-723 | VMT3 |
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Rohm Semiconductor |
TRANS PREBIAS PNP 50V 0.1A VMT3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 4.7 kOhms
- Resistor - Emitter Base (R2) (Ohms): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 150 mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VMT3
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Package: - |
Stock47,850 |
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100 mA | 50 V | 4.7 kOhms | 10 kOhms | 35 @ 5mA, 10V | 150mV @ 500µA, 5mA | 500nA | 250 MHz | 150 mW | Surface Mount | SOT-723 | VMT3 |