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Diodes Incorporated |
TRANS NPN 10V 4A E-LINE
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 10V
- Vce Saturation (Max) @ Ib, Ic: 190mV @ 20mA, 4A
- Current - Collector Cutoff (Max): 10nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
- Power - Max: 1W
- Frequency - Transition: 150MHz
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: E-Line-3, Formed Leads
- Supplier Device Package: E-Line (TO-92 compatible)
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Package: E-Line-3, Formed Leads |
Stock5,616 |
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4A | 10V | 190mV @ 20mA, 4A | 10nA | 300 @ 1A, 2V | 1W | 150MHz | -55°C ~ 200°C (TJ) | Through Hole | E-Line-3, Formed Leads | E-Line (TO-92 compatible) |
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Fairchild/ON Semiconductor |
TRANS NPN 45V 0.1A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
- Power - Max: 500mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock6,976 |
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100mA | 45V | 600mV @ 5mA, 100mA | 15nA | 120 @ 2mA, 5V | 500mW | 250MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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Fairchild/ON Semiconductor |
TRANS PNP 45V 0.1A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
- Power - Max: 500mW
- Frequency - Transition: 130MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock7,008 |
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100mA | 45V | 500mV @ 5mA, 100mA | 15nA | 180 @ 2mA, 5V | 500mW | 130MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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STMicroelectronics |
TRANS NPN DARL 80V 4A SOT-32
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
- Power - Max: 40W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: SOT-32-3
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Package: TO-225AA, TO-126-3 |
Stock22,680 |
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4A | 80V | 3V @ 40mA, 4A | 100µA | 750 @ 2A, 3V | 40W | - | 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | SOT-32-3 |
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Sanken |
TRANS PNP 80V 6A TO3PF
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 6A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 12A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2A, 4V
- Power - Max: 60W
- Frequency - Transition: 20MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3 Full Pack
- Supplier Device Package: TO-3PF
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Package: TO-3P-3 Full Pack |
Stock4,656 |
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6A | 80V | 500mV @ 200mA, 12A | 10µA (ICBO) | 50 @ 2A, 4V | 60W | 20MHz | 150°C (TJ) | Through Hole | TO-3P-3 Full Pack | TO-3PF |
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ON Semiconductor |
TRANS NPN 20V 5A SOT89-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
- Power - Max: 500mW
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PCP
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Package: TO-243AA |
Stock288,000 |
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5A | 20V | 500mV @ 60mA, 3A | 100nA (ICBO) | 120 @ 500mA, 2V | 500mW | 120MHz | 150°C (TJ) | Surface Mount | TO-243AA | PCP |
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Nexperia USA Inc. |
TRANSISTOR NPN 20V 2A SOT1061
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
- Power - Max: 420mW
- Frequency - Transition: 170MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-UDFN
- Supplier Device Package: DFN2020-3
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Package: 3-UDFN |
Stock4,000 |
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2A | 20V | 600mV @ 200mA, 2A | 100nA (ICBO) | 85 @ 500mA, 1V | 420mW | 170MHz | 150°C (TJ) | Surface Mount | 3-UDFN | DFN2020-3 |
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ON Semiconductor |
TRANS NPN 300V 0.15A SOT323
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 300V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 200mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1mA, 10V
- Power - Max: 150mW
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70-3 (SOT323)
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Package: SC-70, SOT-323 |
Stock324,000 |
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150mA | 300V | 500mV @ 2mA, 200mA | 100nA (ICBO) | 25 @ 1mA, 10V | 150mW | - | 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SC-70-3 (SOT323) |
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Nexperia USA Inc. |
TRANS PNP 60V 5A SOT1061
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 450mV @ 250mA, 5A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
- Power - Max: 2.1W
- Frequency - Transition: 90MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-UDFN
- Supplier Device Package: 3-HUSON (2x2)
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Package: 3-UDFN |
Stock5,344 |
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5A | 60V | 450mV @ 250mA, 5A | 100nA | 150 @ 2A, 2V | 2.1W | 90MHz | 150°C (TJ) | Surface Mount | 3-UDFN | 3-HUSON (2x2) |
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Microsemi Corporation |
TRANS PNP DARL 100V 12A TO-3
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
- Power - Max: 150W
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-204AA (TO-3)
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Package: TO-204AA, TO-3 |
Stock7,424 |
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12A | 100V | 3V @ 120mA, 12A | 1mA | 1000 @ 6A, 3V | 150W | - | -55°C ~ 175°C (TJ) | Through Hole | TO-204AA, TO-3 | TO-204AA (TO-3) |
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ON Semiconductor |
TRANS NPN 40V 0.6A SOT223
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 1.5W
- Frequency - Transition: 300MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
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Package: TO-261-4, TO-261AA |
Stock356,904 |
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600mA | 40V | 1V @ 50mA, 500mA | 10nA (ICBO) | 100 @ 150mA, 10V | 1.5W | 300MHz | -65°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 |
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Micro Commercial Co |
TRANS NPN 80V 1A TO-220
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A
- Current - Collector Cutoff (Max): 300µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V
- Power - Max: 30W
- Frequency - Transition: 3MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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Package: TO-220-3 |
Stock14,580 |
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1A | 80V | 700mV @ 125mA, 1A | 300µA | 15 @ 1A, 4V | 30W | 3MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 |
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Micro Commercial Co |
TRANS NPN 45V 0.1A SOT23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
- Power - Max: 225mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock6,256 |
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100mA | 45V | 500mV @ 5mA, 100mA | 100nA | 420 @ 2mA, 5V | 225mW | 100MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 |
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Central Semiconductor Corp |
TRANS NPN 1=20PCS
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: -
- Frequency - Transition: 300MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: Die |
Stock7,296 |
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800mA | 40V | 1V @ 50mA, 500mA | 10nA (ICBO) | 100 @ 150mA, 10V | - | 300MHz | -65°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Diodes Incorporated |
TRANS PNP 12V 4A DFN
- Transistor Type: PNP + Diode (Isolated)
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 12V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 150mA, 4A
- Current - Collector Cutoff (Max): 25nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2.5A, 2V
- Power - Max: 3W
- Frequency - Transition: 110MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-WDFN Exposed Pad
- Supplier Device Package: 8-DFN (3x2)
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Package: 8-WDFN Exposed Pad |
Stock72,000 |
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4A | 12V | 300mV @ 150mA, 4A | 25nA | 180 @ 2.5A, 2V | 3W | 110MHz | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN Exposed Pad | 8-DFN (3x2) |
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Rohm Semiconductor |
TRANS NPN 300V 0.1A SOT-346
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 300V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 10mA, 10V
- Power - Max: 200mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock901,740 |
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100mA | 300V | 2V @ 5mA, 50mA | 500nA (ICBO) | 56 @ 10mA, 10V | 200mW | 100MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SMT3 |
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Diodes Incorporated |
TRANS NPN 40V 4A E-LINE
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 210mV @ 100mA, 4A
- Current - Collector Cutoff (Max): 10nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
- Power - Max: 1W
- Frequency - Transition: 155MHz
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: E-Line-3
- Supplier Device Package: E-Line (TO-92 compatible)
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Package: E-Line-3 |
Stock6,492 |
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4A | 40V | 210mV @ 100mA, 4A | 10nA | 300 @ 1A, 2V | 1W | 155MHz | -55°C ~ 200°C (TJ) | Through Hole | E-Line-3 | E-Line (TO-92 compatible) |
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Microsemi Corporation |
TRANS NPN 50V 0.8A TO18
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 500mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-218
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Package: TO-206AA, TO-18-3 Metal Can |
Stock22,380 |
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800mA | 50V | 1V @ 50mA, 500mA | 50nA | 100 @ 150mA, 10V | 500mW | - | -65°C ~ 200°C (TJ) | Through Hole | TO-206AA, TO-18-3 Metal Can | TO-218 |
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Diodes Incorporated |
TRANS NPN 60V 5A E-LINE
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 200mA, 5A
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
- Power - Max: 1.2W
- Frequency - Transition: 130MHz
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: E-Line-3
- Supplier Device Package: E-Line (TO-92 compatible)
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Package: E-Line-3 |
Stock417,036 |
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5A | 60V | 250mV @ 200mA, 5A | 50nA (ICBO) | 100 @ 2A, 1V | 1.2W | 130MHz | -55°C ~ 200°C (TJ) | Through Hole | E-Line-3 | E-Line (TO-92 compatible) |
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Microchip Technology |
RH POWER BJT
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
- Current - Collector Cutoff (Max): 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
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Package: - |
Request a Quote |
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2 A | 80 V | 1.5V @ 500mA, 5A | 50µA | 70 @ 2.5A, 5V | 1 W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 (TO-205AD) |
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Diodes Incorporated |
PWR LOW SAT TRANSISTOR SOT23 T&R
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 240mV @ 200mA, 4A
- Current - Collector Cutoff (Max): 20nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
- Power - Max: 1 W
- Frequency - Transition: 165MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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Package: - |
Stock9,000 |
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4 A | 60 V | 240mV @ 200mA, 4A | 20nA | 100 @ 2A, 2V | 1 W | 165MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
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Toshiba Semiconductor and Storage |
TRANS PNP 50V 0.15A VESM
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 150 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
- Power - Max: 150 mW
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VESM
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Package: - |
Stock23,850 |
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150 mA | 50 V | 300mV @ 10mA, 100mA | 100nA (ICBO) | 200 @ 2mA, 6V | 150 mW | 80MHz | 150°C (TJ) | Surface Mount | SOT-723 | VESM |
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Sanyo |
NPN EPITAXIAL PLANAR SILICON
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Microchip Technology |
POWER BJT
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: 30 W
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: Stud Mount
- Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
- Supplier Device Package: TO-61
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Package: - |
Request a Quote |
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5 A | 40 V | - | - | - | 30 W | - | - | Stud Mount | TO-211MA, TO-210AC, TO-61-4, Stud | TO-61 |
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Central Semiconductor Corp |
TRANSISTOR
- Transistor Type: -
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 120 V
- Vce Saturation (Max) @ Ib, Ic: 4V @ 800mA, 4A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1.5A, 4V
- Power - Max: 40 W
- Frequency - Transition: 5MHz
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-213AA, TO-66-2
- Supplier Device Package: TO-66
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Package: - |
Request a Quote |
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4 A | 120 V | 4V @ 800mA, 4A | 1mA | 15 @ 1.5A, 4V | 40 W | 5MHz | -65°C ~ 200°C (TJ) | Through Hole | TO-213AA, TO-66-2 | TO-66 |
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onsemi |
TRANS PNP 65V 100MA SOT23
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Diotec Semiconductor |
BJT SOT89 80V 1000MA NPN 0.5W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 150mA, 2V
- Power - Max: 500 mW
- Frequency - Transition: 130MHz
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: -
- Supplier Device Package: SOT-89
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Package: - |
Request a Quote |
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1 A | 80 V | 500mV @ 50mA, 500mA | - | 250 @ 150mA, 2V | 500 mW | 130MHz | - | Surface Mount | - | SOT-89 |
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onsemi |
TRANS NPN 60V 2A 6WDFN
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
- Power - Max: 1.8 W
- Frequency - Transition: 180MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-WDFN Exposed Pad
- Supplier Device Package: 6-WDFN (2x2)
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Package: - |
Stock9,000 |
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2 A | 60 V | 250mV @ 200mA, 2A | 100nA (ICBO) | 150 @ 100mA, 2V | 1.8 W | 180MHz | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-WDFN (2x2) |