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Rohm Semiconductor |
TRANS NPN DARL 100V 8A TO220FN
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 8A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 6mA, 3A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
- Power - Max: 2W
- Frequency - Transition: 40MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220FN
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Package: TO-220-3 Full Pack |
Stock5,712 |
|
8A | 100V | 1.5V @ 6mA, 3A | 10µA (ICBO) | 1000 @ 2A, 3V | 2W | 40MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FN |
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ON Semiconductor |
TRANS NPN 50V 10A TO-220ML
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 360mV @ 250mA, 5A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
- Power - Max: 2W
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220ML
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Package: TO-220-3 Full Pack |
Stock9,588 |
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10A | 50V | 360mV @ 250mA, 5A | 10µA (ICBO) | 200 @ 1A, 2V | 2W | 200MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220ML |
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ON Semiconductor |
TRANS NPN 40V 2A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
- Power - Max: 625mW
- Frequency - Transition: 75MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock4,144 |
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2A | 40V | 500mV @ 200mA, 2A | 100nA (ICBO) | 75 @ 1A, 2V | 625mW | 75MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
TRANS NPN 30V 2A TO-226
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
- Power - Max: 1W
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
- Supplier Device Package: TO-226
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Package: TO-226-3, TO-92-3 Long Body (Formed Leads) |
Stock2,752 |
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2A | 30V | 500mV @ 100mA, 1A | 100nA (ICBO) | 50 @ 1A, 1V | 1W | - | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body (Formed Leads) | TO-226 |
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Fairchild/ON Semiconductor |
TRANS NPN 60V 7A TO-220
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 7A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3A, 1V
- Power - Max: 1.5W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
|
Package: TO-220-3 |
Stock3,184 |
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7A | 60V | 500mV @ 500mA, 5A | 10µA (ICBO) | 100 @ 3A, 1V | 1.5W | - | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Fairchild/ON Semiconductor |
TRANS NPN 400V 5A TO-220F
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 400V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V
- Power - Max: 30W
- Frequency - Transition: 10MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220F
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Package: TO-220-3 Full Pack |
Stock43,272 |
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5A | 400V | 1.5V @ 500mA, 2.5A | 10µA (ICBO) | 10 @ 300mA, 5V | 30W | 10MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F |
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Fairchild/ON Semiconductor |
TRANS NPN 25V 0.7A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 700mA
- Voltage - Collector Emitter Breakdown (Max): 25V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 70mA, 700mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 100mA, 1V
- Power - Max: 600mW
- Frequency - Transition: 170MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock2,240 |
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700mA | 25V | 600mV @ 70mA, 700mA | 100nA (ICBO) | 135 @ 100mA, 1V | 600mW | 170MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Diodes Incorporated |
TRANS NPN 40V 1A SOT223
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
- Power - Max: 2W
- Frequency - Transition: 150MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
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Package: TO-261-4, TO-261AA |
Stock7,056 |
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1A | 40V | 500mV @ 100mA, 1A | 100nA | 300 @ 500mA, 5V | 2W | 150MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 |
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Infineon Technologies |
TRANSISTOR AF SOT89-4
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
- Power - Max: 2W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PG-SOT89
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Package: TO-243AA |
Stock5,136 |
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1A | 80V | 500mV @ 50mA, 500mA | 100nA (ICBO) | 100 @ 150mA, 2V | 2W | 100MHz | 150°C (TJ) | Surface Mount | TO-243AA | PG-SOT89 |
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Microsemi Corporation |
TRANS NPN 40V 1.5A TO-39
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
- Power - Max: 1W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39
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Package: TO-205AD, TO-39-3 Metal Can |
Stock3,376 |
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1.5A | 40V | 900mV @ 100mA, 1A | 10µA (ICBO) | 20 @ 1A, 1.5V | 1W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 |
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ON Semiconductor |
TRANS NPN DARL 30V 0.3A SOT23
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 300mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
- Power - Max: 225mW
- Frequency - Transition: 125MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,224 |
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300mA | 30V | 1.5V @ 100µA, 100mA | 100nA (ICBO) | 10000 @ 100mA, 5V | 225mW | 125MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
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TSC America Inc. |
TRANSISTOR, NPN, 45V, 0.5A, 160A
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
- Power - Max: 300mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock7,376 |
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500mA | 45V | 700mV @ 50mA, 500mA | 100nA (ICBO) | 160 @ 100mA, 1V | 300mW | 100MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 |
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Central Semiconductor Corp |
TRANS NPN 30V TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock18,528 |
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- | 30V | - | 100nA (ICBO) | 100 @ 1mA, 5V | - | - | -65°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92 |
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Diodes Incorporated |
TRANS NPN 450V 0.15A SOT23-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 450V
- Vce Saturation (Max) @ Ib, Ic: 90mV @ 6mA, 50mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 30mA, 10V
- Power - Max: 625mW
- Frequency - Transition: 50MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock925,200 |
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150mA | 450V | 90mV @ 6mA, 50mA | 100nA | 50 @ 30mA, 10V | 625mW | 50MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
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Fairchild/ON Semiconductor |
TRANS NPN 45V 0.8A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
- Power - Max: 625mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock2,784 |
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800mA | 45V | 700mV @ 50mA, 500mA | 100nA | 100 @ 100mA, 1V | 625mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Toshiba Semiconductor and Storage |
TRANS NPN 50V 0.15A SSM
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
- Power - Max: 100mW
- Frequency - Transition: 80MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
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Package: SC-75, SOT-416 |
Stock25,926 |
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150mA | 50V | 250mV @ 10mA, 100mA | 100nA (ICBO) | 350 @ 2mA, 6V | 100mW | 80MHz | 125°C (TJ) | Surface Mount | SC-75, SOT-416 | SSM |
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Nexperia USA Inc. |
TRANS NPN BIPO 40V 10A 8LFPAK
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 460mV @ 500mA, 10A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 230 @ 500mA, 2V
- Power - Max: 1.3W
- Frequency - Transition: 128MHz
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-100, SOT-669
- Supplier Device Package: LFPAK56, Power-SO8
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Package: SC-100, SOT-669 |
Stock24,186 |
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10A | 40V | 460mV @ 500mA, 10A | 100nA | 230 @ 500mA, 2V | 1.3W | 128MHz | 175°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK56, Power-SO8 |
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Rohm Semiconductor |
TRANS NPN 15V 1A SOT-346
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 15V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 20mA, 400mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 2V
- Power - Max: 200mW
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock203,880 |
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1A | 15V | 300mV @ 20mA, 400mA | 500nA (ICBO) | 180 @ 50mA, 2V | 200mW | 200MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SMT3 |
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Fairchild/ON Semiconductor |
TRANS PNP 180V 0.1A TO-126
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 180V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
- Power - Max: 1.2W
- Frequency - Transition: 180MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126-3
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Package: TO-225AA, TO-126-3 |
Stock11,628 |
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100mA | 180V | 500mV @ 5mA, 50mA | 1µA (ICBO) | 100 @ 10mA, 5V | 1.2W | 180MHz | 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | TO-126-3 |
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Diodes Incorporated |
TRANS PNP 50V 3A SOT89-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 390mV @ 300mA, 3A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
- Power - Max: 1W
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89-3
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Package: TO-243AA |
Stock660,000 |
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3A | 50V | 390mV @ 300mA, 3A | 100nA | 200 @ 1A, 2V | 1W | 100MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA | SOT-89-3 |
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Fairchild/ON Semiconductor |
TRANS NPN 50V 0.15A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
- Power - Max: 250mW
- Frequency - Transition: 300MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock72,000 |
|
150mA | 50V | 300mV @ 10mA, 100mA | 100nA (ICBO) | 120 @ 1mA, 6V | 250mW | 300MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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|
onsemi |
POWER BIPOLAR TRANSISTOR NPN
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 20 A
- Voltage - Collector Emitter Breakdown (Max): 800 V
- Vce Saturation (Max) @ Ib, Ic: 5V @ 4A, 16A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
- Power - Max: 3 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3 Full Pack
- Supplier Device Package: TO-3PML
|
Package: - |
Request a Quote |
|
20 A | 800 V | 5V @ 4A, 16A | 1mA | 20 @ 1A, 5V | 3 W | - | 150°C (TJ) | Through Hole | TO-3P-3 Full Pack | TO-3PML |
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Microchip Technology |
RH POWER BJT
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 350 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
- Current - Collector Cutoff (Max): 2µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
- Power - Max: 800 mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 200°C
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
|
Package: - |
Request a Quote |
|
1 A | 350 V | 500mV @ 4mA, 50mA | 2µA | 40 @ 20mA, 10V | 800 mW | - | -55°C ~ 200°C | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 (TO-205AD) |
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Microchip Technology |
PNP POWER TRANSISTOR SILICON AMP
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 350 V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 125mA, 1A
- Current - Collector Cutoff (Max): 5mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1A, 5V
- Power - Max: 3 W
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 200°C
- Mounting Type: Through Hole
- Package / Case: TO-213AA, TO-66-2
- Supplier Device Package: TO-66 (TO-213AA)
|
Package: - |
Request a Quote |
|
2 A | 350 V | 2V @ 125mA, 1A | 5mA | 30 @ 1A, 5V | 3 W | - | -55°C ~ 200°C | Through Hole | TO-213AA, TO-66-2 | TO-66 (TO-213AA) |
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Nexperia USA Inc. |
PBSS4240T-Q/SOT23/TO-236AB
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 100mA, 2V
- Power - Max: 300 mW
- Frequency - Transition: 230MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
|
Package: - |
Request a Quote |
|
2 A | 40 V | 320mV @ 200mA, 2A | 100nA (ICBO) | 350 @ 100mA, 2V | 300 mW | 230MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB |
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NTE Electronics, Inc |
TRANS PNP DARL 100V 5A TO220
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 4V @ 20mA, 5A
- Current - Collector Cutoff (Max): 500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V
- Power - Max: 2 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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Package: - |
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5 A | 100 V | 4V @ 20mA, 5A | 500µA | 1000 @ 3A, 3V | 2 W | - | -65°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 |
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Microchip Technology |
POWER BJT
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
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onsemi |
NPN SILICON TRANSISTOR
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 300 mA
- Voltage - Collector Emitter Breakdown (Max): 120 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
- Power - Max: 1.3 W
- Frequency - Transition: 400MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126ML
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Package: - |
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300 mA | 120 V | 1V @ 5mA, 50mA | 100nA (ICBO) | 100 @ 50mA, 10V | 1.3 W | 400MHz | 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | TO-126ML |