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Microsemi Corporation |
TRANS NPN 80V 3A
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 5µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 2V
- Power - Max: 1W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AA, TO-5-3 Metal Can
- Supplier Device Package: TO-5
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Package: TO-205AA, TO-5-3 Metal Can |
Stock3,888 |
|
3A | 80V | 500mV @ 200mA, 2A | 5µA | 20 @ 1A, 2V | 1W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AA, TO-5-3 Metal Can | TO-5 |
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Bourns Inc. |
TRANS PNP 60V 6A
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 6A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 6A
- Current - Collector Cutoff (Max): 700µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
- Power - Max: 2W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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Package: TO-220-3 |
Stock4,816 |
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6A | 60V | 1.5V @ 1A, 6A | 700µA | 15 @ 3A, 4V | 2W | - | -65°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 |
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Bourns Inc. |
TRANS NPN 400V 4A
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 400V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 800mA, 4A
- Current - Collector Cutoff (Max): 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
- Power - Max: 75W
- Frequency - Transition: 12MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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Package: TO-220-3 |
Stock6,496 |
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4A | 400V | 2.5V @ 800mA, 4A | 50µA | 20 @ 500mA, 5V | 75W | 12MHz | -65°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 |
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Bourns Inc. |
TRANS NPN 60V 6A
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 6A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
- Current - Collector Cutoff (Max): 75µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
- Power - Max: 2W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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Package: TO-220-3 |
Stock5,408 |
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6A | 60V | 1.5V @ 600mA, 6A | 75µA | 15 @ 3A, 4V | 2W | - | -65°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 |
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ON Semiconductor |
TRANS NPN 30V 2A TSOP-6
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
- Power - Max: 535mW
- Frequency - Transition: 300MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: 6-TSOP
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Package: SOT-23-6 |
Stock2,928 |
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2A | 30V | 200mV @ 100mA, 1A | 100nA | 300 @ 500mA, 5V | 535mW | 300MHz | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | 6-TSOP |
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ON Semiconductor |
TRANS NPN DARL 55V 1A TO-92
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 55V
- Vce Saturation (Max) @ Ib, Ic: 1.1V @ 200µA, 200mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 200mA, 5V
- Power - Max: 625mW
- Frequency - Transition: 150MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock6,384 |
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1A | 55V | 1.1V @ 200µA, 200mA | 50nA | 10000 @ 200mA, 5V | 625mW | 150MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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Fairchild/ON Semiconductor |
TRANS NPN 60V 0.5A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
- Power - Max: 625mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock3,104 |
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500mA | 60V | 250mV @ 10mA, 100mA | 100nA | 50 @ 100mA, 1V | 625mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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Fairchild/ON Semiconductor |
TRANS NPN 25V 0.7A TO-92S
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 700mA
- Voltage - Collector Emitter Breakdown (Max): 25V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 70mA, 700mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
- Power - Max: 350mW
- Frequency - Transition: 170MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
- Supplier Device Package: TO-92S
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Package: TO-226-3, TO-92-3 Short Body (Formed Leads) |
Stock2,624 |
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700mA | 25V | 400mV @ 70mA, 700mA | 100nA (ICBO) | 120 @ 100mA, 1V | 350mW | 170MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Short Body (Formed Leads) | TO-92S |
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Infineon Technologies |
TRANSISTOR AF SOT89-4
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 300V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
- Power - Max: 1W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PG-SOT89
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Package: TO-243AA |
Stock6,496 |
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200mA | 300V | 500mV @ 2mA, 20mA | 100nA (ICBO) | 30 @ 30mA, 10V | 1W | 100MHz | 150°C (TJ) | Surface Mount | TO-243AA | PG-SOT89 |
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ON Semiconductor |
TRANS NPN 15V 0.7A CP
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 700mA
- Voltage - Collector Emitter Breakdown (Max): 15V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
- Power - Max: 300mW
- Frequency - Transition: 330MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: 3-CP
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,368 |
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700mA | 15V | 300mV @ 10mA, 200mA | 100nA (ICBO) | 300 @ 10mA, 2V | 300mW | 330MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 3-CP |
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TSC America Inc. |
TRANSISTOR, PNP, -30V, -0.1A, 22
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
- Power - Max: 200mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,416 |
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100mA | 30V | 650mV @ 5mA, 100mA | 100nA (ICBO) | 220 @ 2mA, 5V | 200mW | 100MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 |
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Diodes Incorporated |
TRANS NPN 45V 1A SOT89
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
- Power - Max: 1W
- Frequency - Transition: 150MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89
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Package: TO-243AA |
Stock1,554,480 |
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1A | 45V | 500mV @ 50mA, 500mA | 100nA (ICBO) | 40 @ 150mA, 2V | 1W | 150MHz | -65°C ~ 150°C (TJ) | Surface Mount | TO-243AA | SOT-89 |
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Sanken |
TRANS NPN 230V 15A TO3P
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 230V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 4V
- Power - Max: 160W
- Frequency - Transition: 60MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
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Package: TO-3P-3, SC-65-3 |
Stock6,736 |
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15A | 230V | 500mV @ 500mA, 5A | 10µA (ICBO) | 40 @ 5A, 4V | 160W | 60MHz | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P |
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Central Semiconductor Corp |
TRANS PNP 40V 0.2A TO-18
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
- Power - Max: 360mW
- Frequency - Transition: 250MHz
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18
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Package: TO-206AA, TO-18-3 Metal Can |
Stock7,088 |
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200mA | 40V | 500mV @ 5mA, 50mA | - | 50 @ 10mA, 1V | 360mW | 250MHz | -65°C ~ 200°C (TJ) | Through Hole | TO-206AA, TO-18-3 Metal Can | TO-18 |
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Rohm Semiconductor |
TRANS NPN 80V 2.5A TSMT3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2.5A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
- Power - Max: 1W
- Frequency - Transition: 280MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-96
- Supplier Device Package: TSMT3
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Package: SC-96 |
Stock4,560 |
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2.5A | 80V | 300mV @ 50mA, 1A | 1µA (ICBO) | 120 @ 100mA, 3V | 1W | 280MHz | 150°C (TJ) | Surface Mount | SC-96 | TSMT3 |
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Rohm Semiconductor |
TRANS PNP 12V 1.5A SOT-323
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1.5A
- Voltage - Collector Emitter Breakdown (Max): 12V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 25mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V
- Power - Max: 200mW
- Frequency - Transition: 400MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: UMT3
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Package: SC-70, SOT-323 |
Stock3,751,392 |
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1.5A | 12V | 200mV @ 25mA, 500mA | 100nA (ICBO) | 270 @ 200mA, 2V | 200mW | 400MHz | 150°C (TJ) | Surface Mount | SC-70, SOT-323 | UMT3 |
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Micro Commercial Co |
TRANS NPN 45V 0.8A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 200nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
- Power - Max: 625mW
- Frequency - Transition: 210MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock88,908 |
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800mA | 45V | 700mV @ 50mA, 500mA | 200nA | 100 @ 100mA, 1V | 625mW | 210MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92 |
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Rohm Semiconductor |
TRANS PNP 60V 0.6A SOT-346
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 200mW
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock30,828 |
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600mA | 60V | 1.6V @ 50mA, 500mA | 100nA | 100 @ 150mA, 10V | 200mW | 200MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SMT3 |
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Microchip Technology |
POWER BJT
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 300 V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
- Power - Max: 750 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, No Lead
- Supplier Device Package: UA
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Package: - |
Request a Quote |
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1 A | 300 V | 2V @ 5mA, 50mA | 1mA | 30 @ 50mA, 10V | 750 mW | - | -65°C ~ 200°C (TJ) | Surface Mount | 4-SMD, No Lead | UA |
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Micro Commercial Co |
TRANS NPN 160V 1A TO92MOD
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 160 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 200mA, 5V
- Power - Max: 900 mW
- Frequency - Transition: 20MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
- Supplier Device Package: TO-92MOD
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Package: - |
Request a Quote |
|
1 A | 160 V | 1V @ 50mA, 500mA | 10µA | 60 @ 200mA, 5V | 900 mW | 20MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body (Formed Leads) | TO-92MOD |
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Microchip Technology |
RH SMALL-SIGNAL BJT
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
- Power - Max: 500 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
|
Package: - |
Request a Quote |
|
800 mA | 50 V | 1V @ 50mA, 500mA | 50nA | 40 @ 150mA, 10V | 500 mW | - | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | UB |
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Microchip Technology |
RH SMALL-SIGNAL BJT
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 500 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
|
Package: - |
Request a Quote |
|
600 mA | 60 V | 1.6V @ 50mA, 500mA | 50nA | 100 @ 150mA, 10V | 500 mW | - | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | UB |
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NTE Electronics, Inc |
TRANS NPN 80V 5A TO111
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
- Power - Max: 2 W
- Frequency - Transition: 120MHz
- Operating Temperature: -65°C ~ 200°C
- Mounting Type: Chassis, Stud Mount
- Package / Case: TO-111-4, Stud
- Supplier Device Package: TO-111
|
Package: - |
Request a Quote |
|
5 A | 80 V | 1.5V @ 500mA, 5A | 100µA | 40 @ 50mA, 5V | 2 W | 120MHz | -65°C ~ 200°C | Chassis, Stud Mount | TO-111-4, Stud | TO-111 |
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Renesas Electronics Corporation |
POWER BIPOLAR TRANSISTOR, 3A, 12
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 120 V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 30mA, 3A
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1.5A, 3V
- Power - Max: 30 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220ABS
|
Package: - |
Request a Quote |
|
3 A | 120 V | 3V @ 30mA, 3A | 10µA | 1000 @ 1.5A, 3V | 30 W | - | 150°C (TJ) | Through Hole | TO-220-3 | TO-220ABS |
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General Semiconductor |
TRANS NPN 80V 3A TO111
- Transistor Type: -
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 1.2V @ 100mA, 1A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 10V
- Power - Max: 20 W
- Frequency - Transition: 2MHz
- Operating Temperature: -
- Mounting Type: Stud Mount
- Package / Case: TO-111-4, Stud
- Supplier Device Package: TO-111
|
Package: - |
Request a Quote |
|
3 A | 80 V | 1.2V @ 100mA, 1A | 100µA (ICBO) | 30 @ 500mA, 10V | 20 W | 2MHz | - | Stud Mount | TO-111-4, Stud | TO-111 |
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Microchip Technology |
RH SMALL-SIGNAL BJT
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 500 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, No Lead
- Supplier Device Package: UA
|
Package: - |
Request a Quote |
|
800 mA | 50 V | 1V @ 50mA, 500mA | 50nA | 100 @ 150mA, 10V | 500 mW | - | -65°C ~ 200°C (TJ) | Surface Mount | 4-SMD, No Lead | UA |
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|
onsemi |
INTEGRATED CIRCUIT
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
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Microchip Technology |
RH SMALL-SIGNAL BJT
- Transistor Type: NPN
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): 15 V
- Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 400nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
- Power - Max: 500 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18 (TO-206AA)
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Package: - |
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- | 15 V | 450mV @ 10mA, 100mA | 400nA | 40 @ 10mA, 1V | 500 mW | - | -65°C ~ 200°C | Through Hole | TO-206AA, TO-18-3 Metal Can | TO-18 (TO-206AA) |