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Microsemi Corporation |
TRANS NPN 100V 0.5A TO-39
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
- Power - Max: 1W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
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Package: TO-205AD, TO-39-3 Metal Can |
Stock5,680 |
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500mA | 100V | 600mV @ 30mA, 300mA | 10µA (ICBO) | 40 @ 150mA, 10V | 1W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 (TO-205AD) |
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Fairchild/ON Semiconductor |
TRANS NPN 80V 8A TO-220
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 8A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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Package: TO-220-3 |
Stock3,440 |
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8A | 80V | - | - | - | - | - | - | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
TRANS PNP 60V 0.6A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 625mW
- Frequency - Transition: 200MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock5,936 |
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600mA | 60V | 1.6V @ 50mA, 500mA | 10nA (ICBO) | 100 @ 150mA, 10V | 625mW | 200MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
TRANS NPN 300V 200UA TO-220
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 200µA
- Voltage - Collector Emitter Breakdown (Max): 300V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 10V
- Power - Max: 15W
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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Package: TO-220-3 |
Stock36,000 |
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200µA | 300V | 2V @ 5mA, 50mA | 100µA (ICBO) | 120 @ 10mA, 10V | 15W | 80MHz | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Fairchild/ON Semiconductor |
TRANS PNP 200V 0.1A TO-126
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 200V
- Vce Saturation (Max) @ Ib, Ic: 800mV @ 3mA, 30mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
- Power - Max: 1.2W
- Frequency - Transition: 400MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126
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Package: TO-225AA, TO-126-3 |
Stock4,048 |
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100mA | 200V | 800mV @ 3mA, 30mA | 100nA (ICBO) | 40 @ 10mA, 10V | 1.2W | 400MHz | 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | TO-126 |
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Fairchild/ON Semiconductor |
TRANS PNP 45V 0.2A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 15mA, 150mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 1V
- Power - Max: 400mW
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock5,264 |
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200mA | 45V | 500mV @ 15mA, 150mA | 100nA (ICBO) | 70 @ 50mA, 1V | 400mW | - | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
TRANS NPN 40V 1A TO92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 625mW
- Frequency - Transition: 300MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock3,984 |
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1A | 40V | 1V @ 50mA, 500mA | 10nA (ICBO) | 100 @ 150mA, 10V | 625mW | 300MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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ON Semiconductor |
TRANS NPN 25V 0.1A TO92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 25V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 2mA, 10V
- Power - Max: 625mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock22,620 |
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100mA | 25V | 500mV @ 5mA, 50mA | 50nA (ICBO) | 300 @ 2mA, 10V | 625mW | - | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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Diodes Incorporated |
TRANS NPN 20V 4.5A 3X2MM 8MLP
- Transistor Type: NPN + Diode (Isolated)
- Current - Collector (Ic) (Max): 4.5A
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: 270mV @ 125mA, 4.5A
- Current - Collector Cutoff (Max): 25nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
- Power - Max: 3W
- Frequency - Transition: 140MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-VDFN Exposed Pad
- Supplier Device Package: 8-MLP/DFN (3x2)
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Package: 8-VDFN Exposed Pad |
Stock140,016 |
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4.5A | 20V | 270mV @ 125mA, 4.5A | 25nA | 200 @ 2A, 2V | 3W | 140MHz | 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-MLP/DFN (3x2) |
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Central Semiconductor Corp |
TRANS NPN 30V TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 1mA, 5V
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock9,132 |
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- | 30V | - | 100nA (ICBO) | 45 @ 1mA, 5V | - | - | -65°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92 |
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ON Semiconductor |
TRANS PNP 80V 3A TO220AB
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
- Current - Collector Cutoff (Max): 300µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
- Power - Max: 2W
- Frequency - Transition: 3MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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Package: TO-220-3 |
Stock5,648 |
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3A | 80V | 1.2V @ 375mA, 3A | 300µA | 10 @ 3A, 4V | 2W | 3MHz | -65°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB |
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Nexperia USA Inc. |
TRANS NPN 40V 4A SOT89
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 355mV @ 500mA, 5A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2A, 2V
- Power - Max: 1.6W
- Frequency - Transition: 70MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89-3
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Package: TO-243AA |
Stock7,776 |
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4A | 40V | 355mV @ 500mA, 5A | 100nA | 250 @ 2A, 2V | 1.6W | 70MHz | 150°C (TJ) | Surface Mount | TO-243AA | SOT-89-3 |
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STMicroelectronics |
TRANS NPN 300V 0.5A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 300V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
- Power - Max: 625mW
- Frequency - Transition: 50MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock72,210 |
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500mA | 300V | 500mV @ 2mA, 20mA | 100nA (ICBO) | 40 @ 30mA, 10V | 625mW | 50MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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ON Semiconductor |
TRANS NPN DARL 60V 2A TO220AB
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
- Current - Collector Cutoff (Max): 2mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
- Power - Max: 2W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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Package: TO-220-3 |
Stock5,472 |
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2A | 60V | 2.5V @ 8mA, 2A | 2mA | 1000 @ 1A, 4V | 2W | - | -65°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB |
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ON Semiconductor |
TRANS PNP 30V 1A SOT-23
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
- Power - Max: 310mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock1,554,372 |
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1A | 30V | 650mV @ 200mA, 2A | 100nA | 100 @ 500mA, 2V | 310mW | 100MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
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NTE Electronics, Inc |
TRANS NPN 200V 15A TO3PBL
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 15 A
- Voltage - Collector Emitter Breakdown (Max): 200 V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 1A, 10A
- Current - Collector Cutoff (Max): 5µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
- Power - Max: 150 W
- Frequency - Transition: 25MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3 Full Pack
- Supplier Device Package: TO-3PBL
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Package: - |
Request a Quote |
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15 A | 200 V | 3V @ 1A, 10A | 5µA (ICBO) | 55 @ 1A, 5V | 150 W | 25MHz | 150°C (TJ) | Through Hole | TO-3P-3 Full Pack | TO-3PBL |
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Toshiba Semiconductor and Storage |
TRANS NPN 230V 15A TO3P
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 15 A
- Voltage - Collector Emitter Breakdown (Max): 230 V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
- Current - Collector Cutoff (Max): 5µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
- Power - Max: 180 W
- Frequency - Transition: 30MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3PL
- Supplier Device Package: TO-3P(L)
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Package: - |
Stock306 |
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15 A | 230 V | 3V @ 800mA, 8A | 5µA (ICBO) | 80 @ 1A, 5V | 180 W | 30MHz | 150°C (TJ) | Through Hole | TO-3PL | TO-3P(L) |
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Infineon Technologies |
BIPOLAR GEN PURPOSE TRANSISTOR
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 65 V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
- Power - Max: 330 mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3-1
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Package: - |
Request a Quote |
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100 mA | 65 V | 650mV @ 5mA, 100mA | 15nA (ICBO) | 125 @ 2mA, 5V | 330 mW | 250MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3-1 |
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Central Semiconductor Corp |
TRANS PNP 50V 7A TO220-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 7 A
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 4V
- Power - Max: 40 W
- Frequency - Transition: 4MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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Package: - |
Stock2,709 |
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7 A | 50 V | 3.5V @ 3A, 7A | 1mA | 30 @ 2.5A, 4V | 40 W | 4MHz | -65°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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onsemi |
BIP PNP+PNP 2A 50V
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Central Semiconductor Corp |
TRANS NPN 90V 1A TO39
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 90 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 15mA, 150mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 150mA, 10V
- Power - Max: 1 W
- Frequency - Transition: 120MHz
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39
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Package: - |
Stock1,668 |
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1 A | 90 V | 500mV @ 15mA, 150mA | 10nA (ICBO) | 60 @ 150mA, 10V | 1 W | 120MHz | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 |
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Diotec Semiconductor |
IC
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
- Power - Max: 250 mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
|
Package: - |
Request a Quote |
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100 mA | 30 V | 650mV @ 5mA, 100mA | 15nA (ICBO) | 125 @ 2mA, 5V | 250 mW | 100MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
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Microchip Technology |
NPN POWER SILICON TRANSISTORS
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Microchip Technology |
TRANS NPN 100V 0.5A U4
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: U4
|
Package: - |
Request a Quote |
|
500 mA | 100 V | 600mV @ 30mA, 300mA | 50nA (ICBO) | 100 @ 150mA, 10V | 1 W | - | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | U4 |
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Micro Commercial Co |
Interface
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
- Power - Max: 500 mW
- Frequency - Transition: 130MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89
|
Package: - |
Request a Quote |
|
1 A | 60 V | 500mV @ 50mA, 500mA | 100nA (ICBO) | 63 @ 150mA, 2V | 500 mW | 130MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA | SOT-89 |
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Micro Commercial Co |
TRANS PNP 65V 0.1A SOT323
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 65 V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
- Power - Max: 150 mW
- Frequency - Transition: 100MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
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Package: - |
Stock8,940 |
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100 mA | 65 V | 650mV @ 5mA, 100mA | 100nA (ICBO) | 220 @ 2mA, 5V | 150 mW | 100MHz | -65°C ~ 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SOT-323 |
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Micro Commercial Co |
TRANS PNP 50V 0.15A SOT323
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 150 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
- Power - Max: 100 mW
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
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150 mA | 50 V | 300mV @ 10mA, 100mA | 100nA (ICBO) | 70 @ 2mA, 6V | 100 mW | 80MHz | 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SOT-323 |
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Diodes Incorporated |
PWR MID PERF TRANSISTOR EP3 AMMO
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 800 mA
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 1.25V @ 8mA, 800mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 500mA, 5V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: E-Line-3, Formed Leads
- Supplier Device Package: E-Line (TO-92 compatible)
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800 mA | 100 V | 1.25V @ 8mA, 800mA | 100nA (ICBO) | 10000 @ 500mA, 5V | 1 W | - | -55°C ~ 200°C (TJ) | Through Hole | E-Line-3, Formed Leads | E-Line (TO-92 compatible) |