|
|
STMicroelectronics |
TRANS NPN DARL 80V 8A TO-220FP
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 8A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A
- Current - Collector Cutoff (Max): 500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V
- Power - Max: 29W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220FP
|
Package: TO-220-3 Full Pack |
Stock12,804 |
|
8A | 80V | 2V @ 12mA, 3A | 500µA | 750 @ 3A, 3V | 29W | - | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP |
|
|
ON Semiconductor |
TRANS PNP 40V 0.1A SOT-23
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 10V
- Power - Max: 225mW
- Frequency - Transition: 125MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock5,904 |
|
100mA | 40V | 250mV @ 1mA, 10mA | 100nA (ICBO) | 40 @ 5mA, 10V | 225mW | 125MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
|
|
Fairchild/ON Semiconductor |
TRANS NPN 40V 0.5A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 15mA, 150mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
- Power - Max: 625mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock3,424 |
|
500mA | 40V | 250mV @ 15mA, 150mA | 50nA (ICBO) | 100 @ 150mA, 1V | 625mW | - | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
|
|
ON Semiconductor |
TRANS NPN 50V 0.1A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
- Power - Max: 350mW
- Frequency - Transition: 200MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock6,576 |
|
100mA | 50V | 600mV @ 5mA, 100mA | 15nA (ICBO) | 180 @ 2mA, 5V | 350mW | 200MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
|
|
Diodes Incorporated |
TRANS NPN 30V 5A E-LINE
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 220mV @ 200mA, 5A
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
- Power - Max: 1.2W
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: E-Line-3, Formed Leads
- Supplier Device Package: E-Line (TO-92 compatible)
|
Package: E-Line-3, Formed Leads |
Stock6,208 |
|
5A | 30V | 220mV @ 200mA, 5A | 50nA (ICBO) | 100 @ 1A, 1V | 1.2W | 100MHz | -55°C ~ 200°C (TJ) | Through Hole | E-Line-3, Formed Leads | E-Line (TO-92 compatible) |
|
|
Diodes Incorporated |
TRANS NPN 25V 7A SOT223
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 7A
- Voltage - Collector Emitter Breakdown (Max): 25V
- Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 6.5A
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 1V
- Power - Max: 3W
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
|
Package: TO-261-4, TO-261AA |
Stock7,664 |
|
7A | 25V | 350mV @ 150mA, 6.5A | 50nA (ICBO) | 300 @ 1A, 1V | 3W | 100MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 |
|
|
Diodes Incorporated |
TRANS PNP 30V 1A SOT23-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
- Power - Max: 500mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,512 |
|
1A | 30V | 650mV @ 200mA, 2A | 100nA | 100 @ 500mA, 2V | 500mW | 100MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
|
|
Fairchild/ON Semiconductor |
TRANS NPN DARL 30V 1.2A TO-92
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 1.2A
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30000 @ 20mA, 2V
- Power - Max: 625mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock5,648 |
|
1.2A | 30V | 1V @ 100µA, 100mA | 100nA (ICBO) | 30000 @ 20mA, 2V | 625mW | - | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
|
|
Diodes Incorporated |
TRANS PNP DARL 30V 0.5A SOT23-3
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
- Power - Max: 300mW
- Frequency - Transition: 125MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock7,504 |
|
500mA | 30V | 1.5V @ 100µA, 100mA | 100nA (ICBO) | 10000 @ 100mA, 5V | 300mW | 125MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
|
|
Fairchild/Micross Components |
DIE TRANS NPN MED PWR GEN PURP
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Stock2,167,308 |
|
- | - | - | - | - | - | - | - | - | - | - |
|
|
Central Semiconductor Corp |
THROUGH-HOLE TRANSISTOR BIPOLAR
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 6A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
- Current - Collector Cutoff (Max): 700µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 4V
- Power - Max: 65W
- Frequency - Transition: 3MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
|
Package: TO-220-3 |
Stock4,928 |
|
6A | 80V | 1.5V @ 600mA, 6A | 700µA | 30 @ 300mA, 4V | 65W | 3MHz | -65°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
|
|
Central Semiconductor Corp |
TRANS NPN 40V 0.6A SOT223
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 2W
- Frequency - Transition: 300MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
|
Package: TO-261-4, TO-261AA |
Stock5,504 |
|
600mA | 40V | 1V @ 50mA, 500mA | 10nA (ICBO) | 100 @ 150mA, 10V | 2W | 300MHz | -65°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 |
|
|
ON Semiconductor |
TRANS NPN 50V 3A CPH6
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 2A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
- Power - Max: 1.3W
- Frequency - Transition: 380MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: 6-CPH
|
Package: SOT-23-6 Thin, TSOT-23-6 |
Stock4,144 |
|
3A | 50V | 240mV @ 100mA, 2A | 1µA (ICBO) | 200 @ 100mA, 2V | 1.3W | 380MHz | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | 6-CPH |
|
|
STMicroelectronics |
TRANS PNP 500V 0.5A SOT-23
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 500V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 50mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
- Power - Max: 500mW
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock109,800 |
|
500mA | 500V | 300mV @ 10mA, 50mA | 10µA (ICBO) | 100 @ 50mA, 10V | 500mW | - | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 |
|
|
Nexperia USA Inc. |
TRANS PNP 50V 0.15A SOT323
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 6V
- Power - Max: 200mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323-3
|
Package: SC-70, SOT-323 |
Stock72,000 |
|
150mA | 50V | 500mV @ 5mA, 50mA | 100nA (ICBO) | 180 @ 1mA, 6V | 200mW | 100MHz | 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SOT-323-3 |
|
|
Diodes Incorporated |
TRANS NPN 45V 0.1A DFN1006-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 250mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-UFDFN
- Supplier Device Package: 3-DFN1006 (1.0x0.6)
|
Package: 3-UFDFN |
Stock120,000 |
|
100mA | 45V | 600mV @ 5mA, 100mA | 15nA (ICBO) | 200 @ 2mA, 5V | 250mW | 100MHz | -55°C ~ 150°C (TJ) | Surface Mount | 3-UFDFN | 3-DFN1006 (1.0x0.6) |
|
|
Panasonic Electronic Components |
TRANS NPN 50V 0.1A SMINI3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
- Power - Max: 150mW
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-85
- Supplier Device Package: SMini3-F2-B
|
Package: SC-85 |
Stock891,480 |
|
100mA | 50V | 300mV @ 10mA, 100mA | 100µA | 210 @ 2mA, 10V | 150mW | 150MHz | 150°C (TJ) | Surface Mount | SC-85 | SMini3-F2-B |
|
|
Microchip Technology |
SMALL-SIGNAL BJT
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
- Power - Max: 500 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
|
Package: - |
Request a Quote |
|
800 mA | 50 V | 1V @ 50mA, 500mA | 50nA | 40 @ 150mA, 10V | 500 mW | - | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | UB |
|
|
Nexperia USA Inc. |
TRANS NPN 60V 1A SOT89
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 500mA, 10V
- Power - Max: 1.35 W
- Frequency - Transition: 180MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89
|
Package: - |
Request a Quote |
|
1 A | 60 V | 200mV @ 50mA, 500mA | 100nA (ICBO) | 170 @ 500mA, 10V | 1.35 W | 180MHz | 150°C (TJ) | Surface Mount | TO-243AA | SOT-89 |
|
|
Renesas Electronics Corporation |
SMALL SIGNAL BIPOLAR TRANS PNP
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 700 mA
- Voltage - Collector Emitter Breakdown (Max): 25 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 70mA, 700mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
- Power - Max: 600 mW
- Frequency - Transition: 160MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
|
Package: - |
Request a Quote |
|
700 mA | 25 V | 600mV @ 70mA, 700mA | 100nA (ICBO) | 90 @ 100mA, 1V | 600 mW | 160MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92 |
|
|
onsemi |
2SC4634 - NPN TRIPLE DIFFUSED PL
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10 mA
- Voltage - Collector Emitter Breakdown (Max): 1500 V
- Vce Saturation (Max) @ Ib, Ic: 5V @ 100µA, 500µA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200µA, 5V
- Power - Max: 2 W
- Frequency - Transition: 6MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220FI(LS)
|
Package: - |
Request a Quote |
|
10 mA | 1500 V | 5V @ 100µA, 500µA | 1µA (ICBO) | 10 @ 200µA, 5V | 2 W | 6MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FI(LS) |
|
|
onsemi |
POWER BIPOLAR TRANSISTOR NPN
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Vce Saturation (Max) @ Ib, Ic: 1.25V @ 400mA, 2A
- Current - Collector Cutoff (Max): 200µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 500mA, 3V
- Power - Max: 35 W
- Frequency - Transition: 13MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220FP
|
Package: - |
Request a Quote |
|
5 A | 600 V | 1.25V @ 400mA, 2A | 200µA | 18 @ 500mA, 3V | 35 W | 13MHz | -65°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP |
|
|
Microchip Technology |
TRANS NPN 120V 10A TO39
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10 A
- Voltage - Collector Emitter Breakdown (Max): 120 V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
|
Package: - |
Request a Quote |
|
10 A | 120 V | 2.5V @ 1A, 10A | 10µA | 40 @ 5A, 5V | 1 W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 (TO-205AD) |
|
|
Microchip Technology |
TRANS PNP 80V 1A UA
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Power - Max: 500 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, No Lead
- Supplier Device Package: UA
|
Package: - |
Request a Quote |
|
1 A | 80 V | 1V @ 100mA, 1A | 10µA (ICBO) | 100 @ 100mA, 5V | 500 mW | - | -65°C ~ 200°C (TJ) | Surface Mount | 4-SMD, No Lead | UA |
|
|
onsemi |
BIP NPN 0.2A 100V
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 200 mA
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 5V
- Power - Max: 500 mW
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PCP
|
Package: - |
Request a Quote |
|
200 mA | 100 V | 500mV @ 2mA, 100mA | 100nA (ICBO) | 500 @ 10mA, 5V | 500 mW | 150MHz | 150°C (TJ) | Surface Mount | TO-243AA | PCP |
|
|
Solid State Inc. |
TRANS NPN 250V 2A TO220
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 250 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 10V
- Power - Max: 31.2 W
- Frequency - Transition: 15MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
|
Package: - |
Request a Quote |
|
2 A | 250 V | 1V @ 50mA, 500mA | 10µA | 30 @ 500mA, 10V | 31.2 W | 15MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 |
|
|
onsemi |
BIP NPN 8A 50V
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
|
|
Diodes Incorporated |
TRANS PNP 500V 0.15A SOT223
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 150 mA
- Voltage - Collector Emitter Breakdown (Max): 500 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
- Power - Max: 3 W
- Frequency - Transition: 60MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223-3
|
Package: - |
Stock11,670 |
|
150 mA | 500 V | 500mV @ 10mA, 50mA | 100nA | 100 @ 1mA, 10V | 3 W | 60MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223-3 |