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Microsemi Corporation |
TRANS NPN 12V UB
- Transistor Type: NPN
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): 12V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 3mA, 30mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 1V
- Power - Max: 400mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
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Package: 3-SMD, No Lead |
Stock2,704 |
|
- | 12V | 300mV @ 3mA, 30mA | 10µA (ICBO) | 60 @ 10mA, 1V | 400mW | - | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | UB |
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Bourns Inc. |
TRANS PNP DARL 45V 15A
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 6A, 3V
- Power - Max: 3.5W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-218-3
- Supplier Device Package: SOT-93
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Package: TO-218-3 |
Stock7,824 |
|
15A | 45V | 4V @ 150mA, 15A | 1mA | 750 @ 6A, 3V | 3.5W | - | -65°C ~ 150°C (TJ) | Through Hole | TO-218-3 | SOT-93 |
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Fairchild/ON Semiconductor |
TRANS NPN 40V 0.1A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 10V
- Power - Max: 625mW
- Frequency - Transition: 125MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock5,856 |
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100mA | 40V | 250mV @ 1mA, 10mA | 100nA (ICBO) | 40 @ 5mA, 10V | 625mW | 125MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
TRANS NPN 60V 0.5A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
- Power - Max: 625mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock6,016 |
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500mA | 60V | 250mV @ 10mA, 100mA | 100nA | 100 @ 100mA, 1V | 625mW | 100MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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ON Semiconductor |
TRANS NPN 250V 0.5A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 250V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 50mA, 10V
- Power - Max: 625mW
- Frequency - Transition: 200MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock4,640 |
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500mA | 250V | 1V @ 5mA, 50mA | 50nA (ICBO) | 45 @ 50mA, 10V | 625mW | 200MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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NXP |
TRANS PNP 45V 0.1A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
- Power - Max: 500mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock3,024 |
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100mA | 45V | 650mV @ 5mA, 100mA | 15nA (ICBO) | 220 @ 2mA, 5V | 500mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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NXP |
TRANS NPN 45V 0.1A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
- Power - Max: 500mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock6,416 |
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100mA | 45V | 400mV @ 5mA, 100mA | 15nA (ICBO) | 110 @ 2mA, 5V | 500mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
TRANS PNP DARL 100V 5A TO-220
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 3mA, 3A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 3A, 2V
- Power - Max: 1.5W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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Package: TO-220-3 |
Stock3,264 |
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5A | 100V | 1.5V @ 3mA, 3A | 10µA (ICBO) | 5000 @ 3A, 2V | 1.5W | - | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Fairchild/ON Semiconductor |
TRANS NPN 25V 0.7A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 700mA
- Voltage - Collector Emitter Breakdown (Max): 25V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 70mA, 700mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 100mA, 1V
- Power - Max: 600mW
- Frequency - Transition: 170MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock7,824 |
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700mA | 25V | 600mV @ 70mA, 700mA | 100nA (ICBO) | 135 @ 100mA, 1V | 600mW | 170MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
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Fairchild/ON Semiconductor |
TRANS NPN 45V 0.1A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
- Power - Max: 500mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock4,672 |
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100mA | 45V | 600mV @ 5mA, 100mA | 15nA | 180 @ 2mA, 5V | 500mW | 250MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
TRANS PNP 25V 0.8A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 25V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
- Power - Max: 625mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock7,008 |
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800mA | 25V | 700mV @ 50mA, 500mA | 100nA | 100 @ 100mA, 1V | 625mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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ON Semiconductor |
TRANS NPN 80V 1A SOT89
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
- Power - Max: 1.56W
- Frequency - Transition: 130MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89-3
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Package: TO-243AA |
Stock4,656 |
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1A | 80V | 500mV @ 50mA, 500mA | 100nA (ICBO) | 63 @ 150mA, 2V | 1.56W | 130MHz | -65°C ~ 150°C (TJ) | Surface Mount | TO-243AA | SOT-89-3 |
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Panasonic Electronic Components |
TRANS NPN 50V 0.5A SMINI 3P
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 150mA, 10V
- Power - Max: 150mW
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SMini3-G1
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Package: SC-70, SOT-323 |
Stock6,560 |
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500mA | 50V | 600mV @ 30mA, 300mA | 100nA (ICBO) | 85 @ 150mA, 10V | 150mW | 200MHz | 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SMini3-G1 |
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Infineon Technologies |
TRANS NPN 30V 0.1A SOT-23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 330mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock5,664 |
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100mA | 30V | 600mV @ 5mA, 100mA | 15nA (ICBO) | 200 @ 2mA, 5V | 330mW | 250MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3 |
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Diodes Incorporated |
TRANS NPN 140V 1A E-LINE
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 140V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 15mA, 150mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 1W
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: E-Line-3, Formed Leads
- Supplier Device Package: E-Line (TO-92 compatible)
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Package: E-Line-3, Formed Leads |
Stock46,116 |
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1A | 140V | 700mV @ 15mA, 150mA | 100nA (ICBO) | 100 @ 150mA, 10V | 1W | 100MHz | -55°C ~ 200°C (TJ) | Through Hole | E-Line-3, Formed Leads | E-Line (TO-92 compatible) |
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ON Semiconductor |
TRANS PNP 45V 0.5A SOT-23
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
- Power - Max: 300mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,360 |
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500mA | 45V | 700mV @ 50mA, 500mA | 100nA (ICBO) | 100 @ 100mA, 1V | 300mW | 100MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
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TSC America Inc. |
TRANSISTOR, NPN, 25V, 0.8A, 100A
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 25V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Power - Max: 625mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock6,352 |
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800mA | 25V | 700mV @ 50mA, 500mA | 100nA (ICBO) | 100 @ 100mA, 5V | 625mW | 100MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92 |
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Nexperia USA Inc. |
TRANS NPN 20V 5.8A SOT-223
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5.8A
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 290mA, 5.8A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2A, 2V
- Power - Max: 2W
- Frequency - Transition: 140MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
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Package: TO-261-4, TO-261AA |
Stock33,012 |
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5.8A | 20V | 250mV @ 290mA, 5.8A | 100nA (ICBO) | 250 @ 2A, 2V | 2W | 140MHz | 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 |
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Diodes Incorporated |
SS LOW SAT TRANSISTOR SOT23 T&R
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 220mV @ 50mA, 2A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V
- Power - Max: 625 mW
- Frequency - Transition: 165MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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Package: - |
Stock8,955 |
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2 A | 50 V | 220mV @ 50mA, 2A | 100nA | 300 @ 200mA, 2V | 625 mW | 165MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
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onsemi |
TRANS PNP DARL 30V 1A TO92-3
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30000 @ 20mA, 2V
- Power - Max: 625 mW
- Frequency - Transition: 200MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92-3
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Package: - |
Stock23,208 |
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1 A | 30 V | 1V @ 100µA, 100mA | 100nA (ICBO) | 30000 @ 20mA, 2V | 625 mW | 200MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-92-3 |
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Microchip Technology |
POWER BJT
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Sanyo |
PNP EPITAXIAL PLANAR SILICON
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
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Micro Commercial Co |
PNP TRANSISTORS, SOT-23
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 25 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 1V
- Power - Max: 300 mW
- Frequency - Transition: 150MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
|
Package: - |
Stock17,850 |
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500 mA | 25 V | 600mV @ 50mA, 500mA | 100nA | 120 @ 50mA, 1V | 300 mW | 150MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 |
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Nexperia USA Inc. |
TRANS PNP 40V 5A SOT223
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 160mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
- Power - Max: 2 W
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
|
Package: - |
Request a Quote |
|
5 A | 40 V | 160mV @ 200mA, 2A | 100nA (ICBO) | 150 @ 2A, 2V | 2 W | 120MHz | 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 |
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onsemi |
0.5A, 50V, NPN
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
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Microchip Technology |
TRANS PNP 40V 0.003A TO39
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3 mA
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: -
- Supplier Device Package: TO-39 (TO-205AD)
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Package: - |
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3 mA | 40 V | 1.5V @ 250mA, 2.5A | 100µA (ICBO) | 40 @ 1.5A, 2V | 1 W | - | -65°C ~ 200°C (TJ) | Through Hole | - | TO-39 (TO-205AD) |
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Nexperia USA Inc. |
2PD601ART-Q/SOT23/TO-236AB
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
- Power - Max: 250 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
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Package: - |
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100 mA | 50 V | 250mV @ 10mA, 100mA | 10nA (ICBO) | 210 @ 2mA, 10V | 250 mW | 100MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB |
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Central Semiconductor Corp |
TRANS NPN 60V 0.05A TO18
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 50 mA
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10µA, 5V
- Power - Max: 360 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18
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Package: - |
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50 mA | 60 V | 350mV @ 100µA, 1mA | 10nA (ICBO) | 250 @ 10µA, 5V | 360 mW | - | -65°C ~ 200°C (TJ) | Through Hole | TO-206AA, TO-18-3 Metal Can | TO-18 |