Page 277 - Transistors - Bipolar (BJT) - Single | Discrete Semiconductor Products

2SC3668-O,T2CLAF(J
Toshiba Semiconductor and Storage

TRANS NPN 2A 50V SC71

Package: SC-71

Stock6,816
TIP47
Central Semiconductor Corp

TRANS NPN 250V 1A TO220

Package: TO-220-3

Stock708,960
TIP36A-S
Bourns Inc.

TRANS PNP 60V 25A

Package: TO-218-3

Stock5,088
BD434
STMicroelectronics

TRANS PNP 22V 4A SOT-32

Package: TO-225AA, TO-126-3

Stock1,093,236
2STW4466
STMicroelectronics

TRANS NPN 80V 6A TO-247

Package: TO-247-3

Stock5,472
KSC2310OBU
Fairchild/ON Semiconductor

TRANS NPN 150V 0.05A TO-92L

Package: TO-226-3, TO-92-3 Long Body

Stock4,544
BC214LC
Fairchild/ON Semiconductor

TRANS PNP 30V 0.5A TO-92

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock7,136
BC337TFR
Fairchild/ON Semiconductor

TRANS NPN 45V 0.8A TO-92

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock4,480
BC237B
Central Semiconductor Corp

THROUGH-HOLE TRANSISTOR-SMALL SI

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock5,568
2SA1419S-TD-H
ON Semiconductor

TRANS PNP 160V 1.5A PCP

Package: TO-243AA

Stock7,440
2SA2040-TL-E
ON Semiconductor

TRANS PNP 50V 8A TP-FA

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock9,864
SBC846BWT1G
ON Semiconductor

TRANS NPN 65V 0.1A SC-70

Package: SC-70, SOT-323

Stock6,704
TIP102-BP
Micro Commercial Co

TRANS NPN DARL 100V 8A TO-220

Package: TO-220-3

Stock20,172
MMBT3904LT1HTSA1
Infineon Technologies

TRANS NPN 40V 0.2A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock380,682
FZT696BTA
Diodes Incorporated

TRANS NPN 180V 0.5A SOT-223

Package: TO-261-4, TO-261AA

Stock22,992
FMMT491TA
Diodes Incorporated

TRANS NPN 60V 1A SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock1,168,632
2SB1406-AN
onsemi

PNP 1.5A 50V DARLINGTON

Package: -

Request a Quote
2SAR583D3FRATL
Rohm Semiconductor

PNP, TO-252 (DPAK), -50V -7A, PO

Package: -

Stock6,801
2SB1140T
onsemi

PNP SILICON TRANSISTOR

Package: -

Request a Quote
PBSS4350T-QR
Nexperia USA Inc.

PBSS4350T-Q/SOT23/TO-236AB

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
2SC3668-O,T2CLAF(J	Toshiba Semiconductor and Storage	TRANS NPN 2A 50V SC71 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 1W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	Package: SC-71	Stock6,816	2A	50V	500mV @ 50mA, 1A	1µA (ICBO)	70 @ 500mA, 2V	1W	100MHz	150°C (TJ)	Through Hole	SC-71	MSTM
TIP47	Central Semiconductor Corp	TRANS NPN 250V 1A TO220 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 250V Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V Power - Max: 40W Frequency - Transition: 10MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	Package: TO-220-3	Stock708,960	1A	250V	1V @ 200mA, 1A	1mA	30 @ 300mA, 10V	40W	10MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220
TIP36A-S	Bourns Inc.	TRANS PNP 60V 25A Transistor Type: PNP Current - Collector (Ic) (Max): 25A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 4V @ 5A, 25A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V Power - Max: 3.5W Frequency - Transition: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-218-3 Supplier Device Package: SOT-93	Package: TO-218-3	Stock5,088	25A	60V	4V @ 5A, 25A	1mA	10 @ 15A, 4V	3.5W	-	-65°C ~ 150°C (TJ)	Through Hole	TO-218-3	SOT-93
BD434	STMicroelectronics	TRANS PNP 22V 4A SOT-32 Transistor Type: PNP Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 22V Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 5V Power - Max: 36W Frequency - Transition: 3MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: SOT-32	Package: TO-225AA, TO-126-3	Stock1,093,236	4A	22V	500mV @ 200mA, 2A	100µA	40 @ 10mA, 5V	36W	3MHz	150°C (TJ)	Through Hole	TO-225AA, TO-126-3	SOT-32
2STW4466	STMicroelectronics	TRANS NPN 80V 6A TO-247 Transistor Type: NPN Current - Collector (Ic) (Max): 6A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2A, 4V Power - Max: 60W Frequency - Transition: 20MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	Package: TO-247-3	Stock5,472	6A	80V	1.5V @ 600mA, 6A	100nA (ICBO)	50 @ 2A, 4V	60W	20MHz	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
KSC2310OBU	Fairchild/ON Semiconductor	TRANS NPN 150V 0.05A TO-92L Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Power - Max: 800mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92-3	Package: TO-226-3, TO-92-3 Long Body	Stock4,544	50mA	150V	500mV @ 1mA, 10mA	100nA (ICBO)	70 @ 10mA, 5V	800mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 Long Body	TO-92-3
BC214LC	Fairchild/ON Semiconductor	TRANS PNP 30V 0.5A TO-92 Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V Power - Max: 625mW Frequency - Transition: 200MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock7,136	500mA	30V	600mV @ 5mA, 100mA	15nA (ICBO)	140 @ 2mA, 5V	625mW	200MHz	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
BC337TFR	Fairchild/ON Semiconductor	TRANS NPN 45V 0.8A TO-92 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 625mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock4,480	800mA	45V	700mV @ 50mA, 500mA	100nA	100 @ 100mA, 1V	625mW	100MHz	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BC237B	Central Semiconductor Corp	THROUGH-HOLE TRANSISTOR-SMALL SI Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V Power - Max: 300mW Frequency - Transition: 150MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock5,568	100mA	50V	600mV @ 5mA, 100mA	15nA	180 @ 2mA, 5V	300mW	150MHz	-65°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92
2SA1419S-TD-H	ON Semiconductor	TRANS PNP 160V 1.5A PCP Transistor Type: PNP Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V Power - Max: 500mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PCP	Package: TO-243AA	Stock7,440	1.5A	160V	500mV @ 50mA, 500mA	1µA (ICBO)	140 @ 100mA, 5V	500mW	120MHz	150°C (TJ)	Surface Mount	TO-243AA	PCP
2SA2040-TL-E	ON Semiconductor	TRANS PNP 50V 8A TP-FA Transistor Type: PNP Current - Collector (Ic) (Max): 8A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Power - Max: 1W Frequency - Transition: 290MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: 2-TP-FA	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock9,864	8A	50V	400mV @ 40mA, 2A	100nA (ICBO)	200 @ 500mA, 2V	1W	290MHz	150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	2-TP-FA
SBC846BWT1G	ON Semiconductor	TRANS NPN 65V 0.1A SC-70 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 150mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70-3 (SOT323)	Package: SC-70, SOT-323	Stock6,704	100mA	65V	600mV @ 5mA, 100mA	15nA (ICBO)	200 @ 2mA, 5V	150mW	100MHz	-55°C ~ 150°C (TJ)	Surface Mount	SC-70, SOT-323	SC-70-3 (SOT323)
TIP102-BP	Micro Commercial Co	TRANS NPN DARL 100V 8A TO-220 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 8A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 2.5V @ 80mA, 8A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V Power - Max: 80W Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220	Package: TO-220-3	Stock20,172	8A	100V	2.5V @ 80mA, 8A	50µA	1000 @ 3A, 4V	80W	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220
MMBT3904LT1HTSA1	Infineon Technologies	TRANS NPN 40V 0.2A SOT-23 Transistor Type: NPN Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 330mW Frequency - Transition: 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock380,682	200mA	40V	300mV @ 5mA, 50mA	50nA (ICBO)	100 @ 10mA, 1V	330mW	300MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
FZT696BTA	Diodes Incorporated	TRANS NPN 180V 0.5A SOT-223 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 180V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 200mA, 5V Power - Max: 2W Frequency - Transition: 70MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	Package: TO-261-4, TO-261AA	Stock22,992	500mA	180V	250mV @ 5mA, 200mA	100nA (ICBO)	150 @ 200mA, 5V	2W	70MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
FMMT491TA	Diodes Incorporated	TRANS NPN 60V 1A SOT23-3 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V Power - Max: 500mW Frequency - Transition: 150MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock1,168,632	1A	60V	250mV @ 100mA, 1A	100nA	100 @ 500mA, 5V	500mW	150MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
2SB1406-AN	onsemi	PNP 1.5A 50V DARLINGTON Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2SAR583D3FRATL	Rohm Semiconductor	PNP, TO-252 (DPAK), -50V -7A, PO Transistor Type: PNP Current - Collector (Ic) (Max): 7 A Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1mA, 3V Power - Max: 10 W Frequency - Transition: 230MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252	Package: -	Stock6,801	7 A	50 V	400mV @ 150mA, 3A	1µA (ICBO)	180 @ 1mA, 3V	10 W	230MHz	150°C (TJ)	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252
2SB1140T	onsemi	PNP SILICON TRANSISTOR Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
PBSS4350T-QR	Nexperia USA Inc.	PBSS4350T-Q/SOT23/TO-236AB Transistor Type: NPN Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V Power - Max: 1.2 W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB	Package: -	Request a Quote	2 A	50 V	370mV @ 300mA, 3A	100nA (ICBO)	300 @ 1A, 2V	1.2 W	100MHz	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB
JAN2N6689	Microchip Technology	TRANS NPN 300V 100UA TO61 Transistor Type: NPN Current - Collector (Ic) (Max): 100 µA Voltage - Collector Emitter Breakdown (Max): 300 V Vce Saturation (Max) @ Ib, Ic: 5V @ 5A, 15A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 3V Power - Max: 3 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TA) Mounting Type: Stud Mount Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud Supplier Device Package: TO-61	Package: -	Request a Quote	100 µA	300 V	5V @ 5A, 15A	100µA	15 @ 1A, 3V	3 W	-	-65°C ~ 200°C (TA)	Stud Mount	TO-211MA, TO-210AC, TO-61-4, Stud	TO-61
JANSR2N2906AUBC	Microchip Technology	RH SMALL-SIGNAL BJT Transistor Type: PNP Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 500 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UBC	Package: -	Request a Quote	600 mA	60 V	1.6V @ 50mA, 500mA	50nA	40 @ 150mA, 10V	500 mW	-	-65°C ~ 200°C (TJ)	Surface Mount	3-SMD, No Lead	UBC
JANSP2N3635L	Microchip Technology	TRANS PNP 140V 1A TO5 Transistor Type: PNP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 140 V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Power - Max: 1 W Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	Package: -	Request a Quote	1 A	140 V	600mV @ 5mA, 50mA	10µA	100 @ 50mA, 10V	1 W	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
JANTXV2N5416	Microchip Technology	PNP TRANSISTOR Transistor Type: PNP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 300 V Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Power - Max: 750 mW Frequency - Transition: - Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5AA	Package: -	Request a Quote	1 A	300 V	2V @ 5mA, 50mA	1mA	30 @ 50mA, 10V	750 mW	-	-65°C ~ 200°C (TJ)	Through Hole	TO-205AA, TO-5-3 Metal Can	TO-5AA
NJVMJD340T4G	onsemi	TRANS NPN 300V 0.5A DPAK Transistor Type: NPN Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 300 V Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Power - Max: 1.56 W Frequency - Transition: 10MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: DPAK	Package: -	Stock873	500 mA	300 V	1V @ 10mA, 100mA	100µA	30 @ 50mA, 10V	1.56 W	10MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	DPAK
2C3790	Microchip Technology	POWER BJT Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Power - Max: - Frequency - Transition: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2SA1201-Y-TE12L-ZC	Toshiba Semiconductor and Storage	PB-F POWER TRANSISTOR PW-MINI PD Transistor Type: PNP Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 120 V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 500 mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PW-MINI	Package: -	Stock2,322	800 mA	120 V	1V @ 50mA, 500mA	100nA (ICBO)	80 @ 100mA, 5V	500 mW	120MHz	150°C (TJ)	Surface Mount	TO-243AA	PW-MINI
CP588-2N2605-CT	Central Semiconductor Corp	TRANS PNP 45V 0.03A DIE Transistor Type: - Current - Collector (Ic) (Max): 30 mA Voltage - Collector Emitter Breakdown (Max): 45 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 500µA, 10mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10µA, 5V Power - Max: 400 mW Frequency - Transition: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	Package: -	Request a Quote	30 mA	45 V	500mV @ 500µA, 10mA	-	100 @ 10µA, 5V	400 mW	-	-	Surface Mount	Die	Die