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Microsemi Corporation |
TRANS NPN 275V 10A TO-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 275V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1.25A, 10A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 10A, 3V
- Power - Max: 6W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3
- Supplier Device Package: TO-3 (TO-204AA)
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Package: TO-3 |
Stock5,184 |
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10A | 275V | 1.5V @ 1.25A, 10A | 1mA | 8 @ 10A, 3V | 6W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-3 | TO-3 (TO-204AA) |
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ON Semiconductor |
TRANS PNP 100V 2A NMP
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Power - Max: 1W
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: SC-71
- Supplier Device Package: 3-NMP
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Package: SC-71 |
Stock3,312 |
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2A | 100V | 600mV @ 100mA, 1A | 100nA (ICBO) | 100 @ 100mA, 5V | 1W | 120MHz | 150°C (TJ) | Through Hole | SC-71 | 3-NMP |
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Fairchild/ON Semiconductor |
TRANS PNP 45V 0.8A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
- Current - Collector Cutoff (Max): 35nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 625mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock7,696 |
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800mA | 45V | 400mV @ 15mA, 150mA | 35nA | 100 @ 150mA, 10V | 625mW | - | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
TRANS PNP 30V 0.1A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 500mW
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock4,192 |
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100mA | 30V | 650mV @ 5mA, 100mA | 15nA (ICBO) | 200 @ 2mA, 5V | 500mW | 150MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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ON Semiconductor |
TRANS PNP 45V 0.8A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 800mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
- Power - Max: 625mW
- Frequency - Transition: 260MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock2,720 |
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800mA | 45V | 700mV @ 50mA, 500mA | 100nA | 160 @ 100mA, 1V | 625mW | 260MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Panasonic Electronic Components |
TRANS NPN 50V 0.1A 1006
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 10V
- Power - Max: 100mW
- Frequency - Transition: 100MHz
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: ML3-N2
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Package: SC-101, SOT-883 |
Stock3,248 |
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100mA | 50V | 300mV @ 10mA, 100mA | 100µA | 180 @ 2mA, 10V | 100mW | 100MHz | 125°C (TJ) | Surface Mount | SC-101, SOT-883 | ML3-N2 |
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Diodes Incorporated |
TRANS PNP 200V 1A E-LINE
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 200V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 5V
- Power - Max: 1W
- Frequency - Transition: 30MHz
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: E-Line-3
- Supplier Device Package: E-Line (TO-92 compatible)
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Package: E-Line-3 |
Stock2,912 |
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1A | 200V | 500mV @ 200mA, 1A | 100nA (ICBO) | 50 @ 500mA, 5V | 1W | 30MHz | -55°C ~ 200°C (TJ) | Through Hole | E-Line-3 | E-Line (TO-92 compatible) |
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Infineon Technologies |
TRANS PNP 32V 0.1A SOT-23
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 32V
- Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
- Current - Collector Cutoff (Max): 20nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
- Power - Max: 330mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock6,688 |
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100mA | 32V | 550mV @ 1.25mA, 50mA | 20nA (ICBO) | 180 @ 2mA, 5V | 330mW | 250MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3 |
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Central Semiconductor Corp |
TRANS NPN DARL 80V 8A CHIP FORM
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 8A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
- Current - Collector Cutoff (Max): 500µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
- Power - Max: -
- Frequency - Transition: 4MHz
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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Package: Die |
Stock2,272 |
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8A | 80V | 3V @ 80mA, 8A | 500µA | 750 @ 4A, 3V | - | 4MHz | -65°C ~ 200°C (TJ) | Surface Mount | Die | Die |
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Microsemi Corporation |
TRANS NPN DARL 80V 10A TO3
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 10A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
- Power - Max: 6W
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-204AA (TO-3)
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Package: TO-204AA, TO-3 |
Stock6,528 |
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10A | 80V | 3V @ 100mA, 10A | 1mA | 1000 @ 5A, 3V | 6W | - | -55°C ~ 175°C (TJ) | Through Hole | TO-204AA, TO-3 | TO-204AA (TO-3) |
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Microsemi Corporation |
TRANS PNP 80V 1A
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Power - Max: 500mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-206AA, TO-18-3 Metal Can
- Supplier Device Package: TO-18 (TO-206AA)
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Package: TO-206AA, TO-18-3 Metal Can |
Stock7,184 |
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1A | 80V | 1V @ 100mA, 1A | 10µA (ICBO) | 100 @ 100mA, 5V | 500mW | - | -55°C ~ 200°C (TJ) | Through Hole | TO-206AA, TO-18-3 Metal Can | TO-18 (TO-206AA) |
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Panasonic Electronic Components |
TRANS NPN 100V 0.02A MINI3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 20mA
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 2mA, 10V
- Power - Max: 200mW
- Frequency - Transition: 140MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: Mini3-G3-B
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock6,480 |
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20mA | 100V | 200mV @ 1mA, 10mA | 1µA | 400 @ 2mA, 10V | 200mW | 140MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Mini3-G3-B |
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Rohm Semiconductor |
TRANS PNP 40V 0.2A SST3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
- Power - Max: 350mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SST3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock1,446,552 |
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200mA | 40V | 400mV @ 5mA, 50mA | 50nA | 100 @ 10mA, 1V | 350mW | 250MHz | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SST3 |
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Diodes Incorporated |
TRANS PNP 80V 1A SOT89-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
- Power - Max: 1W
- Frequency - Transition: 200MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89-3
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Package: TO-243AA |
Stock173,016 |
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1A | 80V | 500mV @ 50mA, 500mA | 100nA (ICBO) | 63 @ 150mA, 2V | 1W | 200MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA | SOT-89-3 |
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WeEn Semiconductors |
TRANS NPN 400V 4A TO220AB
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 400V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 4A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2A, 5V
- Power - Max: 75W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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Package: TO-220-3 |
Stock38,724 |
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4A | 400V | 1V @ 1A, 4A | 100µA | 10 @ 2A, 5V | 75W | - | 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB |
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ON Semiconductor |
TRANS NPN DARL 80V 4A TO225AA
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
- Power - Max: 40W
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-225AA
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Package: TO-225AA, TO-126-3 |
Stock5,344 |
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4A | 80V | 2.8V @ 40mA, 2A | 100µA | 750 @ 2A, 3V | 40W | - | -55°C ~ 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | TO-225AA |
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Diodes Incorporated |
TRANS NPN 20V 2.5A SOT23-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2.5A
- Voltage - Collector Emitter Breakdown (Max): 20V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 2.5A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
- Power - Max: 625mW
- Frequency - Transition: 140MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,534,760 |
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2.5A | 20V | 200mV @ 50mA, 2.5A | 100nA | 200 @ 2A, 2V | 625mW | 140MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
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Microchip Technology |
POWER BJT
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 350 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
- Current - Collector Cutoff (Max): 2µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
- Power - Max: 800 mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 200°C
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
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Package: - |
Request a Quote |
|
1 A | 350 V | 500mV @ 4mA, 50mA | 2µA | 40 @ 20mA, 10V | 800 mW | - | -55°C ~ 200°C | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 (TO-205AD) |
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Microchip Technology |
RH SMALL-SIGNAL BJT
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 500 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UBC
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Package: - |
Request a Quote |
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800 mA | 50 V | 1V @ 50mA, 500mA | 50nA | 100 @ 150mA, 10V | 500 mW | - | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | UBC |
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Nexperia USA Inc. |
BSR30-Q/SOT89/MPT3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 5V
- Power - Max: 1.35 W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89
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Package: - |
Request a Quote |
|
1 A | 60 V | 500mV @ 50mA, 500mA | 100nA (ICBO) | 40 @ 100mA, 5V | 1.35 W | 100MHz | 150°C (TJ) | Surface Mount | TO-243AA | SOT-89 |
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Toshiba Semiconductor and Storage |
PB-FPOWERTRANSISTORTO-126NPC=10W
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 230 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 200nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Power - Max: 1.5 W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126N
|
Package: - |
Request a Quote |
|
1 A | 230 V | 1.5V @ 50mA, 500mA | 200nA (ICBO) | 100 @ 100mA, 5V | 1.5 W | 100MHz | 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | TO-126N |
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onsemi |
Power Bipolar Transistor, 7A, 50
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
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Microchip Technology |
PNP TRANSISTOR
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
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|
Microchip Technology |
POWER BJT
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 250 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
- Current - Collector Cutoff (Max): 2µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
- Power - Max: 800 mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 200°C
- Mounting Type: Through Hole
- Package / Case: TO-205AA, TO-5-3 Metal Can
- Supplier Device Package: TO-5AA
|
Package: - |
Request a Quote |
|
1 A | 250 V | 500mV @ 4mA, 50mA | 2µA | 40 @ 20mA, 10V | 800 mW | - | -55°C ~ 200°C | Through Hole | TO-205AA, TO-5-3 Metal Can | TO-5AA |
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Microchip Technology |
NPN TRANSISTOR
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V
- Power - Max: 2 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Stud Mount
- Package / Case: TO-210AA, TO-59-4, Stud
- Supplier Device Package: TO-59
|
Package: - |
Request a Quote |
|
5 A | 80 V | 2V @ 500mA, 5A | 10µA | 40 @ 1A, 2V | 2 W | - | -65°C ~ 200°C (TJ) | Stud Mount | TO-210AA, TO-59-4, Stud | TO-59 |
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Microchip Technology |
TRANS PNP 60V 6A TO66
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 6 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: 40 W
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-213AA, TO-66-2
- Supplier Device Package: TO-66 (TO-213AA)
|
Package: - |
Request a Quote |
|
6 A | 60 V | - | - | - | 40 W | - | - | Through Hole | TO-213AA, TO-66-2 | TO-66 (TO-213AA) |
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Microchip Technology |
TRANS PNP 400V 5A TO3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 400 V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: 100 W
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
|
Package: - |
Request a Quote |
|
5 A | 400 V | - | - | - | 100 W | - | - | Through Hole | TO-204AA, TO-3 | TO-3 |
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NTE Electronics, Inc |
TRANS NPN DARL 50V 0.5A TO202
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
- Current - Collector Cutoff (Max): 500nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40000 @ 200mA, 5V
- Power - Max: 1.33 W
- Frequency - Transition: 75MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-202 Long Tab
- Supplier Device Package: TO-202
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500 mA | 50 V | 1.5V @ 500µA, 500mA | 500nA | 40000 @ 200mA, 5V | 1.33 W | 75MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-202 Long Tab | TO-202 |