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Toshiba Semiconductor and Storage |
TRANS PNP 5A 50V TO220-3
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
- Power - Max: 2W
- Frequency - Transition: 60MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NIS
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Package: TO-220-3 Full Pack |
Stock2,656 |
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5A | 50V | 400mV @ 200mA, 2A | 1µA (ICBO) | 100 @ 1A, 1V | 2W | 60MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS |
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ON Semiconductor |
TRANS NPN 40V 0.6A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 625mW
- Frequency - Transition: 300MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock6,320 |
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600mA | 40V | 1V @ 50mA, 500mA | 10nA (ICBO) | 100 @ 150mA, 10V | 625mW | 300MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
TRANS NPN 25V 0.2A TO-92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 25V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2mA, 10V
- Power - Max: 625mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock6,240 |
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200mA | 25V | 500mV @ 5mA, 50mA | 50nA (ICBO) | 150 @ 2mA, 10V | 625mW | - | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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STMicroelectronics |
TRANS NPN TRIL 370V 5A SOT-82
- Transistor Type: NPN - Trilinton, Zener Clamp
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 370V
- Vce Saturation (Max) @ Ib, Ic: 4V @ 3mA, 3A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 1A, 5V
- Power - Max: 55W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: SOT-82
- Supplier Device Package: SOT-82-3
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Package: SOT-82 |
Stock6,192 |
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5A | 370V | 4V @ 3mA, 3A | 100µA | 7000 @ 1A, 5V | 55W | - | 150°C (TJ) | Through Hole | SOT-82 | SOT-82-3 |
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ON Semiconductor |
TRANS PNP 150V 0.6A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 150V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
- Power - Max: 625mW
- Frequency - Transition: 300MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock6,656 |
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600mA | 150V | 500mV @ 5mA, 50mA | 50nA (ICBO) | 60 @ 10mA, 5V | 625mW | 300MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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NXP |
TRANS NPN 80V 0.5A SOT54
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
- Power - Max: 625mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock2,992 |
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500mA | 80V | 250mV @ 10mA, 100mA | 50nA (ICBO) | 100 @ 100mA, 1V | 625mW | 100MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Fairchild/ON Semiconductor |
TRANS NPN 400V 12A TO-220
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 12A
- Voltage - Collector Emitter Breakdown (Max): 400V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5A, 5V
- Power - Max: 100W
- Frequency - Transition: 4MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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Package: TO-220-3 |
Stock651,864 |
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12A | 400V | 3V @ 3A, 12A | - | 15 @ 5A, 5V | 100W | 4MHz | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Fairchild/ON Semiconductor |
TRANS NPN 800V 3A TO-220F
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 3A
- Voltage - Collector Emitter Breakdown (Max): 800V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
- Power - Max: 40W
- Frequency - Transition: 15MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220F
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Package: TO-220-3 Full Pack |
Stock5,968 |
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3A | 800V | 2V @ 300mA, 1.5A | 10µA (ICBO) | 10 @ 200mA, 5V | 40W | 15MHz | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F |
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Fairchild/ON Semiconductor |
TRANS NPN 25V 0.7A TO-92S
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 700mA
- Voltage - Collector Emitter Breakdown (Max): 25V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 70mA, 700mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
- Power - Max: 350mW
- Frequency - Transition: 170MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
- Supplier Device Package: TO-92S
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Package: TO-226-3, TO-92-3 Short Body (Formed Leads) |
Stock5,936 |
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700mA | 25V | 400mV @ 70mA, 700mA | 100nA (ICBO) | 200 @ 100mA, 1V | 350mW | 170MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Short Body (Formed Leads) | TO-92S |
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Diodes Incorporated |
TRANS PNP 400V 0.5A E-LINE
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 400V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 500mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 10V
- Power - Max: 1.2W
- Frequency - Transition: 85MHz
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: E-Line-3, Formed Leads
- Supplier Device Package: E-Line (TO-92 compatible)
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Package: E-Line-3, Formed Leads |
Stock7,200 |
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500mA | 400V | 400mV @ 100mA, 500mA | 50nA (ICBO) | 100 @ 500mA, 10V | 1.2W | 85MHz | -55°C ~ 200°C (TJ) | Through Hole | E-Line-3, Formed Leads | E-Line (TO-92 compatible) |
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Fairchild/ON Semiconductor |
TRANS PNP 30V 0.1A TO-92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
- Power - Max: 500mW
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
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Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Stock5,616 |
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100mA | 30V | 650mV @ 5mA, 100mA | 15nA (ICBO) | 110 @ 2mA, 5V | 500mW | 150MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
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Panasonic Electronic Components |
TRANS NPN 200V 0.07A TO-92L
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 70mA
- Voltage - Collector Emitter Breakdown (Max): 200V
- Vce Saturation (Max) @ Ib, Ic: 1.2V @ 5mA, 50mA
- Current - Collector Cutoff (Max): 2µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V
- Power - Max: 1W
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92L-A1
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Package: TO-226-3, TO-92-3 Long Body |
Stock6,960 |
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70mA | 200V | 1.2V @ 5mA, 50mA | 2µA (ICBO) | 100 @ 5mA, 10V | 1W | 80MHz | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | TO-92L-A1 |
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Sanken |
TRANS NPN DARL 150V 15A TO3PF
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 150V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 10mA, 10A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 10A, 4V
- Power - Max: 85W
- Frequency - Transition: 70MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3 Full Pack
- Supplier Device Package: TO-3PF
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Package: TO-3P-3 Full Pack |
Stock6,768 |
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15A | 150V | 2.5V @ 10mA, 10A | 100µA (ICBO) | 5000 @ 10A, 4V | 85W | 70MHz | 150°C (TJ) | Through Hole | TO-3P-3 Full Pack | TO-3PF |
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Diodes Incorporated |
TRANS NPN 100V 1A SOT23-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 10V
- Power - Max: 500mW
- Frequency - Transition: 150MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,624 |
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1A | 100V | 600mV @ 100mA, 1A | 100nA | 100 @ 250mA, 10V | 500mW | 150MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
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ON Semiconductor |
TRANS PNP 250V 15A TO-3P
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 15A
- Voltage - Collector Emitter Breakdown (Max): 250V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 800mA, 8A
- Current - Collector Cutoff (Max): 50µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 3A, 5V
- Power - Max: 200W
- Frequency - Transition: 30MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
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Package: TO-3P-3, SC-65-3 |
Stock26,868 |
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15A | 250V | 600mV @ 800mA, 8A | 50µA (ICBO) | 75 @ 3A, 5V | 200W | 30MHz | -65°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P |
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Diodes Incorporated |
TRANS NPN 25V 0.2A SC70-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 25V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V
- Power - Max: 200mW
- Frequency - Transition: 300MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
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Package: SC-70, SOT-323 |
Stock547,200 |
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200mA | 25V | 300mV @ 5mA, 50mA | 50nA (ICBO) | 120 @ 2mA, 1V | 200mW | 300MHz | -55°C ~ 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SOT-323 |
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ON Semiconductor |
TRANS PNP 30V 0.1A SOT23
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
- Power - Max: 300mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock16,259,520 |
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100mA | 30V | 650mV @ 5mA, 100mA | 15nA (ICBO) | 420 @ 2mA, 5V | 300mW | 100MHz | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
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Micro Commercial Co |
TRANS NPN 60V 2A TO92
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
- Power - Max: 625 mW
- Frequency - Transition: 75MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
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Package: - |
Request a Quote |
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2 A | 60 V | 500mV @ 200mA, 2A | 100nA (ICBO) | 75 @ 1A, 2V | 625 mW | 75MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92 |
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Nexperia USA Inc. |
MMBZ16VA-T/SOT23/TO-236AB
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Stock9,000 |
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Microchip Technology |
TRANS PNP 60V 0.6A UA
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 500 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, No Lead
- Supplier Device Package: UA
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Package: - |
Request a Quote |
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600 mA | 60 V | 1.6V @ 50mA, 500mA | 50nA | 100 @ 150mA, 10V | 500 mW | - | -65°C ~ 200°C | Surface Mount | 4-SMD, No Lead | UA |
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Nexperia USA Inc. |
TRANS 45V 0.5A DFN1412D-3
- Transistor Type: -
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
- Power - Max: 380 mW
- Frequency - Transition: 80MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 3-XDFN Exposed Pad
- Supplier Device Package: DFN1412D-3
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Package: - |
Stock75,000 |
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500 mA | 45 V | 700mV @ 50mA, 500mA | 100nA (ICBO) | 100 @ 100mA, 1V | 380 mW | 80MHz | 150°C (TJ) | Surface Mount, Wettable Flank | 3-XDFN Exposed Pad | DFN1412D-3 |
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Central Semiconductor Corp |
TRANS PNP 40V 0.2A SOT953
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 200 mA
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
- Power - Max: 250 mW
- Frequency - Transition: 300MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-953
- Supplier Device Package: SOT-953
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Package: - |
Stock23,199 |
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200 mA | 40 V | 200mV @ 5mA, 50mA | - | 100 @ 10mA, 1V | 250 mW | 300MHz | -65°C ~ 150°C (TJ) | Surface Mount | SOT-953 | SOT-953 |
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Microchip Technology |
RH POWER BJT
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
- Current - Collector Cutoff (Max): 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AA, TO-5-3 Metal Can
- Supplier Device Package: TO-5AA
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Package: - |
Request a Quote |
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2 A | 80 V | 1.5V @ 500mA, 5A | 50µA | 70 @ 2.5A, 5V | 1 W | - | -65°C ~ 200°C (TJ) | Through Hole | TO-205AA, TO-5-3 Metal Can | TO-5AA |
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Micro Commercial Co |
TRANS PNP 45V 0.1A TO92
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
- Power - Max: 625 mW
- Frequency - Transition: 150MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92
|
Package: - |
Request a Quote |
|
100 mA | 45 V | 650mV @ 5mA, 100mA | 100nA | 420 @ 2mA, 5V | 625 mW | 150MHz | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-92 |
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Microchip Technology |
TRANS PNP 60V 0.6A UB
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
- Power - Max: 500 mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
|
Package: - |
Request a Quote |
|
600 mA | 60 V | 1.6V @ 50mA, 500mA | 50nA | 40 @ 150mA, 10V | 500 mW | - | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | UB |
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Microchip Technology |
POWER BJT
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
- Power - Max: 1 W
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 200°C
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
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Package: - |
Request a Quote |
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5 A | 100 V | 1.2V @ 500mA, 5A | 100µA | 60 @ 2A, 2V | 1 W | - | -55°C ~ 200°C | Through Hole | TO-205AD, TO-39-3 Metal Can | TO-39 (TO-205AD) |
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onsemi |
TRANS NPN SS 2A 60V TO92
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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Microchip Technology |
NPN SILICON TRANSISTOR
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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